MHV5IC2215NR2_07

Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure. Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications including TD - SCDMA. Driver Application • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 27.5 dB ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 24 dB ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters Features • On - Chip Matching (50 Ohm Input, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout MHV5IC2215NR2 2170 MHz, 23 dBm, 28 V SINGLE N - CDMA, SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 CASE 978 - 03 PFP - 16 N.C. VRD1 VRG1 VDS1 GND RFin VGS1 VGS2 1 2 3 4 5 6 7 8 (Top View) 16 15 14 13 12 11 10 9 N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C. RFin VGS1 VGS2 Quiescent Current Temperature Compensation Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2007. All rights reserved. MHV5IC2215NR2 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +12 - 65 to +150 150 12 Unit Vdc Vdc °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = 23 dBm CW) Stage 1, 28 Vdc, IDQ1 = 164 mA Stage 2, 28 Vdc, IDQ2 = 115 mA Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Symbol RθJC 9.3 3.5 Value (1) Unit °C/W Table 3. ESD Protection Characteristics Class 0 (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gain Flatness in 60 MHz Bandwidth @ Pout = 23 dBm f = 2110 - 2170 MHz Adjacent Channel Power Ratio Input Return Loss Gps GF ACPR IRL 23 — — — 24 0.3 - 56 - 12 27 0.5 - 54 - 10 dB dB dBc dB Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gain Flatness @ Pout = 23 dBm Adjacent Channel Power Ratio Input Return Loss Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 23 dBm Average Group Delay @ Pout = 23 dBm Including Output Matching f = 1930 - 1990 MHz Gps GF ACPR IRL Φ Delay 25.5 — — — — — 27.5 0.3 - 60 - 12 0.2 1.5 29 — — — — — dB dB dBc dB ° ns 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. MHV5IC2215NR2 2 RF Device Data Freescale Semiconductor W - CDMA DRIVER APPLICATION 1 VRD1 VRG1 Z12 VDS1 + C5 + 4 C4 5 Z1 C1 VGS1 R1 VGS2 R2 C3 C2 8 7 Z2 Z3 Z4 6 2 3 NC NC 16 Z13 15 C8 14 13 Z5 12 C11 11 10 C9 Z6 C10 Z7 Z8 Z9 Z10 Z11 + C7 + VDS2 C6 RF OUTPUT RF INPUT Quiescent Current Temperature Compensation NC 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.045″ x 0.1289″ Microstrip 0.0443″ x 0.0161″ Microstrip 0.0308″ x 0.0416″ x 0.03″ Taper 0.0161″ x 0.0685″ Microstrip 0.0838″ x 0.1759″ Microstrip 0.0503″ x 0.1759″ Microstrip 0.0922″ x 0.1759″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.0105″ x 0.1200″ Microstrip 0.0559″ x 0.1145″ Microstrip 0.045″ x 0.2671″ Microstrip 0.3319″ x 0.0349″ Microstrip 0.0027″ x 2.0413″ Microstrip 0.9151″ x 0.0349″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 3. MHV5IC2215NR2 Test Circuit Schematic Table 6. MHV5IC2215NR2 Test Circuit Component Designations and Values Part C1 C2, C3 C4, C7 C5, C6 C8 C9, C10 C11 R1, R2 Description 22 pF, 50 V Chip Capacitor 6.8 pF, 50 V Chip Capacitors 1 μF, 35 V Tantalum Chip Capacitors 330 μF, 50 V Electrolytic Chip Capacitors 0.01 μF, 50 V Chip Capacitor 2.7 pF, 50 V Chip Capacitors 15 pF, 25 V Chip Capacitor 1 kW, 1/8 W Chip Resistors Part Number 06033J220GBS 06035J6R8BBS TAJA105K035R MCR35V337M10X16 0805C103K5RACTR 06035J2R7BBS 06033J150GBS CRCW08051000FKTA Manufacturer AVX AVX AVX Multicomp Kemet AVX AVX Vishay MHV5IC2215NR2 RF Device Data Freescale Semiconductor 3 W - CDMA DRIVER APPLICATION C5 C6 C4 VD1 VD2 C7 C8 C1 C9 C10 C2 C11 C3 R2 VG2 R1 VG1 MHV5IC2215, Rev. 1 Figure 4. MHV5IC2215NR2 Test Circuit Component Layout MHV5IC2215NR2 4 RF Device Data Freescale Semiconductor TYPICAL W - CDMA DRIVER APPLICATION CHARACTERISTICS PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 33 30 27 24 21 18 15 12 9 6 3 0 0.1 IM3 PAE 1 Pout, OUTPUT POWER (WATTS) AVG. 10 VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA 10 MHz in 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 0 −6 −12 −24 −30 −36 ACPR −42 −48 −54 −60 −66 IM3 (dBc), ACPR (dBc) −18 Figure 5. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power 50 28 TC = − 30_C 26 Gps, POWER GAIN (dB) Gps 25_C 24 85_C 22 VDD = 28 Vdc IDQ1 = 164 mA IDQ2 = 115 mA f = 2140 MHz PAE 25_C 85_C −30_C 26 PAE, POWER ADDED EFFICIENCY (%) 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW 32 V VDD = 24 V 28 V IDQ1 = 164 mA IDQ2 = 115 mA f = 2140 MHz 40 30 20 20 18 0.1 10 0 1 10 30 Pout, OUTPUT POWER (WATTS) CW Figure 6. Power Gain and Power Added Efficiency versus Output Power 28 21 14 S21 (dB) 7 0 −7 S11 −14 VDD = 28 Vdc, Pout = 23 dBm CW IDQ1 = 164 mA, IDQ2 = 115 mA 1500 2000 f, FREQUENCY (MHz) 2500 −14 −16 3000 S21 −2 −4 −6 S11 (dB) −8 −10 −12 Gps, POWER GAIN (dB) 30 28 26 24 Figure 7. Power Gain versus Output Power TC = − 30_C 25_C 85_C 22 20 VDD = 28 Vdc, Pout = 23 dBm CW IDQ1 = 164 mA, IDQ2 = 115 mA Two −Tone Measurements, Center Frequency = 2140 MHz 1950 2000 2050 2100 2150 2200 2250 2300 −21 1000 18 1900 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response Figure 9. Power Gain versus Frequency MHV5IC2215NR2 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 109 108 MTTF (HOURS) 107 2nd Stage 1st Stage 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc and Pout = 23 dBm. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 10. MTTF versus Junction Temperature MHV5IC2215NR2 6 RF Device Data Freescale Semiconductor f = 2170 MHz Zload f = 2110 MHz Zin f = 2170 MHz Z o = 75 Ω f = 2110 MHz VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm f MHz 2110 2140 2170 Zin Zin Ω 75.39 - j12.39 71.11 - j18.83 66.07 - j22.68 Zload Ω 1.03 - j0.87 0.99 - j0.61 0.94 - j0.35 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 11. Series Equivalent Input and Load Impedance, 2140 MHz MHV5IC2215NR2 RF Device Data Freescale Semiconductor 7 N - CDMA DRIVER APPLICATION 1 VRD1 VRG1 Z11 VDS1 + C5 + 4 C4 5 Z1 C1 VGS1 R1 VGS2 R2 C3 C2 8 7 Z2 Z3 Z4 6 2 3 NC NC 16 Z12 15 C8 14 13 Z5 12 C11 11 10 C9 C12 Z6 C10 Z7 Z8 Z9 Z10 + C7 + VDS2 C6 RF OUTPUT RF INPUT Quiescent Current Temperature Compensation NC 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.045″ x 0.1289″ Microstrip 0.0443″ x 0.0161″ Microstrip 0.0308″ x 0.0416″ x 0.03″ Taper 0.0161″ x 0.0685″ Microstrip 0.0838″ x 0.1759″ Microstrip 0.1425″ x 1.7590″ Microstrip 0.0105″ x 0.1200″ Microstrip Z8 Z9 Z10 Z11 Z12 PCB 0.0559″ x 0.1145″ Microstrip 0.0450″ x 0.2671″ Microstrip 0.3319″ x 0.0349″ Microstrip 0.0027″ x 2.0413″ Microstrip 0.9151″ x 0.0349″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 12. MHV5IC2215NR2 Test Circuit Schematic Table 7. MHV5IC2215NR2 Test Circuit Component Designations and Values Part C1 C2, C3 C4, C7 C5, C6 C8 C9, C10 C11 C12 R1, R2 Description 22 pF, 25 V Chip Capacitor 6.8 pF, 50 V Chip Capacitors 1 μF, 35 V Tantalum Chip Capacitors 330 μF, 50 V Electrolytic Chip Capacitors 0.01 μF, 50 V Chip Capacitor 2.4 pF, 50 V Chip Capacitors 15 pF, 25 V Chip Capacitor 1.5 pF, 50 V Chip Capacitor 1 kW, 1/8 W Chip Resistors Part Number 06033J220GBS 06035J6R8BBS TAJA105K035R MCR35V337M10X16 0805C103K5RACTR 06035J2R4BBS 06033J150GBS 06035J1R5BBS CRCW08051000FKTA Manufacturer AVX AVX AVX Multicomp Kemet AVX AVX AVX Vishay MHV5IC2215NR2 8 RF Device Data Freescale Semiconductor N - CDMA DRIVER APPLICATION C5 C6 C4 VD1 VD2 C7 C8 C1 C9 C10 C2 C12 C11 C3 R2 VG2 R1 VG1 MHV5IC2215, Rev. 1 Figure 13. MHV5IC2215NR2 Test Circuit Component Layout MHV5IC2215NR2 RF Device Data Freescale Semiconductor 9 TYPICAL N - CDMA DRIVER APPLICATION CHARACTERISTICS PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 44 40 36 32 28 24 20 16 12 8 4 0 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 IM3 PAE ACPR VDD = 28 Vdc, IDQ1 = 145 mA, IDQ2 = 105 mA, f1 = 1955 MHz f2 = 1965 MHz, 2 x N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps 0 −6 −12 −24 −30 −36 −42 −48 −54 −60 −66 IM3 (dBc), ACPR (dBc) −18 Figure 14. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power 50 32 PAE, POWER ADDED EFFICIENCY (%) 24 16 S21 (dB) 8 0 −8 −16 VDD = 28 Vdc Pout = 23 dBm CW IDQ1 = 145 mA IDQ2 = 105 mA 1500 2000 f, FREQUENCY (MHz) S21 −2 −4 −6 S11 (dB) −8 −10 −12 S11 −14 −16 3000 31 Gps 30 Gps, POWER GAIN (dB) 40 29 30 28 PAE 27 26 0.1 VDD = 28 Vdc IDQ1 = 145 mA IDQ2 = 105 mA f = 1960 MHz 10 30 20 10 0 1 −24 1000 2500 Pout, OUTPUT POWER (WATTS) CW Figure 15. Power Gain and Power Added Efficiency versus Output Power Figure 16. Broadband Frequency Response MHV5IC2215NR2 10 RF Device Data Freescale Semiconductor Z o = 50 Ω f = 1930 MHz Zin f = 1990 MHz f = 1930 MHz Zload f = 1990 MHz VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm f MHz 1930 1960 1990 Zin Zin Ω 45.98 + j19.10 53.88 + j20.43 62.55 + j18.70 Zload Ω 2.18 - j0.88 2.15 - j1.18 2.12 - j1.49 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 17. Series Equivalent Input and Load Impedance, 1960 MHz MHV5IC2215NR2 RF Device Data Freescale Semiconductor 11 Table 8. Common Source Scattering Parameters (VDC = 28 V, TC = 25_C, 50 ohm system) IDQ1 = 164 mA, IDQ2 = 115 mA f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 |S11| 0.68244 0.60173 0.47213 0.39882 0.35107 0.23689 0.21492 0.30222 0.46271 0.60247 0.69273 ∠φ 21.958 - 30.075 - 92.332 175.345 59.2 - 70.587 162.587 113.328 74.437 39.529 8.867 |S21| 3.27363 10.23125 13.7957 13.86577 16.61251 17.30592 17.05916 6.44934 1.40717 0.39763 0.10191 S21 ∠φ - 46.706 - 119.333 123.921 44.495 - 38.246 - 133.04 121.911 - 14.639 - 89.824 - 141.044 - 174.046 |S12| 0.00073 0.00072 0.0007 0.00088 0.00141 0.0018 0.00324 0.00275 0.00149 0.00109 0.00129 S12 ∠φ 9.794 13.436 - 2.999 - 45.669 - 13.097 - 35.967 - 62.618 - 134.469 - 169.397 167.909 122.208 |S22| 0.98732 1.00029 0.94139 0.93605 0.91624 0.88891 0.56059 0.69074 0.92384 0.958 0.9351 S22 ∠φ 153.093 126.919 106.192 87.096 65.161 37.263 - 24.504 84.748 34.554 6.133 - 18.125 IDQ1 = 164 mA, IDQ2 = 345 mA f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 |S11| 0.67537 0.59017 0.46708 0.39635 0.32171 0.2053 0.20173 0.29085 0.46015 0.60229 0.69238 S11 |S11| 0.6711 0.58525 0.46378 0.39336 0.31114 0.19301 0.19638 0.28869 0.45971 0.60251 0.69282 ∠φ 21.546 - 30.018 - 92.504 174.232 55.471 - 78.069 152.604 111.542 73.791 39.001 8.463 |S21| 5.75013 16.76169 19.69001 20.76629 24.51619 25.16732 23.41998 9.01024 2.10623 0.60593 0.15674 ∠φ 21.709 - 29.975 - 92.31 174.623 55.947 - 76.58 154.548 112.112 74.095 39.22 8.662 |S21| 5.31667 15.91709 19.32081 20.10313 23.76068 24.4731 23.13058 8.78893 2.0309 0.58259 0.15083 S21 ∠φ - 53.329 - 134.625 116.925 39.298 - 44.522 - 138.656 115.327 - 12.58 - 88.735 - 141.146 - 174.755 |S12| 0.0007 0.00077 0.00076 0.0009 0.00124 0.00189 0.00305 0.00259 0.00142 0.00107 0.00121 S21 ∠φ - 50.942 - 129.84 119.077 41.013 - 42.642 - 136.766 117.16 - 12.308 - 88.099 - 140.332 - 173.655 |S12| 0.0008 0.00067 0.00075 0.00083 0.00135 0.0017 0.00282 0.00276 0.00145 0.00109 0.00114 S12 ∠φ 24.45 - 1.375 5.296 - 40.621 - 10.794 - 36.619 - 62.675 - 134.95 - 166.566 168.738 124.35 |S22| 0.99347 0.9925 0.91107 0.90699 0.88668 0.85513 0.46723 0.64185 0.90861 0.95346 0.93359 S12 ∠φ 6.129 - 0.12 - 10.343 - 45.427 - 6.07 - 34.308 - 62.743 - 133.95 - 172.129 165.352 127.091 |S22| 0.99279 0.99768 0.91612 0.91179 0.89001 0.86052 0.47971 0.65353 0.91226 0.95453 0.93394 S22 ∠φ 152.201 124.548 105.394 87.053 65.947 38.413 - 15.877 79.222 34.114 6.03 - 18.226 S22 ∠φ 152.416 124.892 105.353 87.084 65.729 38.165 - 18.382 80.165 34.199 6.049 - 18.148 IDQ1 = 164 mA, IDQ2 = 500 mA f MHz 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 MHV5IC2215NR2 12 RF Device Data Freescale Semiconductor TD - SCDMA CHARACTERIZATION 1 VRD1 VRG1 Z12 VDS1 + C5 + 4 C4 5 Z1 C1 VGS1 R1 VGS2 R2 C3 C2 8 7 Z2 Z3 Z4 6 2 3 NC NC 16 Z13 15 C8 14 13 Z5 12 C11 11 10 C9 Z6 C10 Z7 Z8 Z9 Z10 Z11 + C7 + VDS2 C6 RF OUTPUT RF INPUT Quiescent Current Temperature Compensation NC 9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.045″ x 0.1289″ Microstrip 0.0443″ x 0.0161″ Microstrip 0.0308″ x 0.0416″ x 0.03″ Taper 0.0161″ x 0.0685″ Microstrip 0.0838″ x 0.1759″ Microstrip 0.089″ x 0.1759″ Microstrip 0.054″ x 0.1759″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.0105″ x 0.1200″ Microstrip 0.0559″ x 0.1145″ Microstrip 0.045″ x 0.2671″ Microstrip 0.7775″ x 0.0349″ Microstrip 2.0413″ x 0.0027″ Microstrip 0.4697″ x 0.0349″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 18. MHV5IC2215NR2 Test Circuit Schematic — TD - SCDMA Table 9. MHV5IC2215NR2 Test Circuit Component Designations and Values — TD - SCDMA Part C1 C2, C3 C4, C7 C5, C6 C8 C9, C10 C11 R1, R2 Description 22 pF, 50 V Chip Capacitor 6.8 pF, 50 V Chip Capacitors 1 μF, 35 V Tantalum Chip Capacitors 330 μF, 50 V Electrolytic Chip Capacitors 0.01 μF, 50 V Chip Capacitor 2.7 pF, 50 V Chip Capacitors 15 pF, 25 V Chip Capacitor 1 kW, 1/8 W Chip Resistors Part Number 06033J220GBS 06035J6R8BBS TAJA105K035R MCR35V337M10X16 0805C103K5RACTR 06035J2R7BBS 06033J150GBS CRCW08051000FKTA Manufacturer AVX AVX AVX Multicomp Kemet AVX AVX Vishay MHV5IC2215NR2 RF Device Data Freescale Semiconductor 13 C5 C6 C4 VD1 VD2 C7 C8 C1 C9 C10 C2 C3 R2 VG2 R1 VG1 MHV5IC2215, Rev. 1 C11 Figure 19. MHV5IC2215NR2 Test Circuit Component Layout — TD - SCDMA MHV5IC2215NR2 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −20 −25 −30 ALT/ACPR (dBc) −35 −40 Adj −U −45 −50 −55 −60 15 17 19 21 23 25 27 Pout, OUTPUT POWER (WATTS) AVG. Adj −L Alt−L 1 Alt−U 0.5 0 1.5 3−Carrier TD−SCDMA VD1 = VD2 = 28 V IDQ1 = 140 mA, IDQ2 = 125 mA f = 2017.5 MHz PAE 3 2.5 2 4 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 1.28 MHz Channel BW 3.5 Figure 20. 3 - Carrier TD - SCDMA ACPR, ALT and Power Added Efficiency versus Output Power −20 −25 −30 ALT/ACPR (dBc) −35 −40 −45 −50 −55 −60 15 17 19 21 23 25 27 Pout, OUTPUT POWER (WATTS) AVG. Alt−L Alt−U 0.5 0 Adj −U Adj −L 1.5 1 6−Carrier TD−SCDMA VD1 = VD2 = 28 V IDQ1 = 140 mA, IDQ2 = 125 mA f = 2017.5 MHz PAE 3 2.5 2 4 3.5 Figure 21. 6 - Carrier TD - SCDMA ACPR, ALT and Power Added Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −40 −50 −60 −70 −80 −90 −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset 1.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 15 MHz −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW −30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −40 −50 −60 −70 −80 −90 −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −130 Center 2.0175 GHz −130 Center 2.0175 GHz Figure 22. 3 - Carrier TD - SCDMA Spectrum Figure 23. 6 - Carrier TD - SCDMA Spectrum MHV5IC2215NR2 RF Device Data Freescale Semiconductor 15 Z o = 50 Ω f = 2010 MHz Zin f = 2024 MHz f = 2010 MHz f = 2024 MHz Zload VDD = 28 Vdc, IDQ1 = 140 mA, IDQ2 = 125 mA f MHz 2010 2017 2024 Zin Zin W 65.31 + j15.57 67.01 + j14.27 68.60 + j12.82 Zload W 1.34 - j1.00 1.36 - j1.17 1.39 - j1.30 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 24. Series Equivalent Input and Load Impedance — TD - SCDMA MHV5IC2215NR2 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb Y A A2 M b1 c C DATUM PLANE SEATING PLANE H SECT W - W L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978 - 03 ISSUE C PFP- 16 RF Device Data Freescale Semiconductor ÇÉÇ ÇÉ ÇÉÇ ÇÉ b aaa M c1 CA S DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MHV5IC2215NR2 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 3 Date Jan. 2007 Description • Added “including TD - SCDMA” to data sheet description paragraph, p. 1 • Updated verbiage in Typical N - CDMA Tests table, p. 2 • Corrected ordering of Z11 and Z13 numbers in Z list, Fig. 3, Test Circuit Schematic and updated Part Numbers in Table 6, Component Designations and Values (for W - CDMA), to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 6, Power Gain and Power Added Efficiency versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 7, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 5 • Replaced Fig. 10, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 6 • Corrected ordering of Z10 and Z11 numbers in Z list, Fig. 12, Test Circuit Schematic and updated Part Numbers in Table 7, Component Designations and Values (for N - CDMA), to RoHS compliant part numbers, p. 8 • Adjusted scale for Fig. 15, Power Gain and Power Added Efficiency versus Output Power, to better match the device’s capabilities, p. 10 • Updated Zin values and chart in Fig. 11, W - CDMA Series Impedance, p. 7, and in Fig. 17, N - CDMA Series Impedance, p. 11 • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 13 - 16 • Added Product Documentation and Revision History, p. 18 MHV5IC2215NR2 18 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHV5IC2215NR2 Document Number: RF Device Data MHV5IC2215N Rev. 3, 1/2007 Freescale Semiconductor 19