MHVIC915R2

Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 50 dBc @ 30 kHz Bandwidth Driver Applications • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869 894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 60 dBc @ 30 kHz Bandwidth ACPR @ 1.98 MHz Offset — - 66 dBc @ 30 kHz Bandwidth • Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full Frequency Band (921 - 960 MHz) Power Gain — 30 dB @ P1dB Power Added Efficiency = 56% @ P1dB • Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC915R2 746 - 960 MHz, 15 W, 27 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER ARCHIVE INFORMATION 16 1 CASE 978 - 03 PFP - 16 PLASTIC Replaced by MHVIC915NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout N.C. VRD1 VRG1 VDS1 GND RFin VGS1 VGS2 Quiescent Current Temperature Compensation 1 2 3 4 5 6 7 8 (Top View) 16 15 14 13 12 11 10 9 N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C. RFin VGS1 VGS2 Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC915R2 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, +15 - 65 to +150 150 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = 0.2 W CW) Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 26 Vdc, IDQ = 50 mA Stage 2, 26 Vdc, IDQ = 140 mA Symbol RθJC 15.1 5.1 15.8 5.0 13.8 4.5 Value (1) Unit °C/W ARCHIVE INFORMATION GSM Application (Pout = 15 W CW) Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 0 (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 240 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain (Pout = 23 dBm) Power Added Efficiency (Pout = 34 dBm) Input Return Loss (Pout = 23 dBm) Adjacent Channel Power Ratio (Pout = 23 dBm) Adjacent Channel Power Ratio (Pout = 34 dBm) Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps PAE IRL ACPR ACPR GF IBSD 29 — — — — — 0.8 31 21 - 12 - 60 - 50 0.2 1.2 — — -9 - 55 — 0.4 1.6 dB % dB dBc dBc dB mA 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. (continued) MHVIC915R2 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Output Application (Pout = 2.5 W CW) Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Quiescent Current Accuracy over Temperature ( - 10 to 85°C) at Nominal Value (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 23 dBm (800 MHz to 960 MHz) Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm Group Delay @ Pout = 23 dBm Including Output Matching Part to Part Phase Variation @ Pout = 23 dBm Symbol ΔIQT GF Φ Delay ΦΔ Min — — — — — Typ ±5 0.20 ±0.2 2.2 ±10 Max — — — — — Unit % dB ° ns ° Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, 865 - 895 MHz Typical GSM Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, 921 - 960 MHz, CW Output Power, 1 dB Compression Point Power Gain @ P1dB P1dB Gps PAE IRL — IMD PAE — — — — — — — 15 30 56 - 16 0.9 - 30 35 — — — — — — — W dB ARCHIVE INFORMATION Input Return Loss @ P1dB Error Vector Magnitude @ 5 W Intermodulation Distortion (15 W PEP, 2 - Tone, 100 kHz Tone Spacing) Power Added Efficiency (15 W PEP, 2 - Tone, 100 kHz Tone Spacing) dB % dBc % 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1977. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MHVIC915R2 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION Power Added Efficiency @ P1dB % VBSD VBIAS BSG R5 Z11 VD1 C8 RF INPUT C7 1 NC 2 3 4 NC 16 15 14 13 12 11 Quiescent Current Temperature Compensation 10 NC 9 Z2 Z6 Z3 Z4 C1 C2 Z8 Z5 C4 Z7 C5 + VD2 C6 RF OUTPUT Z1 5 6 7 C13 Z12 VGS1 8 C3 Z9 ARCHIVE INFORMATION R1 C11 R3 C12 Z10 VGS2 VBIAS2 R2 C10 R4 C9 Z1 Z2 Z3 Z4 Z5 Z6 0.0438″ x 0.400″ 50 Ω Microstrip 0.1709″ x 0.1004″ Microstrip (not including IC pad length) 0.1222″ x 0.1944″ Microstrip 0.0836″ x 0.3561″ Microstrip 0.0438″ x 0.2725″ Microstrip 0.0504″ x 0.3378″ Microstrip Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.0504″ x 0.480″ Microstrip 0.0252″ x 0.843″ Microstrip 0.0252″ x 0.167″ Microstrip 0.040″ x 0.850″ Microstrip 0.025″ x 0.400″ Microstrip 0.020″ x 0.710″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 3. MHVIC915R2 Test Circuit Schematic Table 6. MHVIC915R2 Test Circuit Component Designations and Values Part C1, C2 C3, C4 C5, C8, C10, C11 C6 C7, C9, C12 C13 R1, R2, R5 R3, R4 Description 4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 μF X7R Chip Capacitors (1214) 10 μF, 50 V Electrolytic Capacitor 0.01 μF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Part Number ATC600S4R7CW GRM40 - 001COG470J050BD GRM42 - 2X7R105K050AL ECEV1HA100SP GRM40X7R103J050BD GRM40 - 001COG8R2C050BD RM73B2AT102J RM73B2AT104J Manufacturer ATC Murata Murata Panasonic Murata Murata KOA Speer KOA Speer MHVIC915R2 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VBIAS1 MHVIC915 Rev 0 VBIAS BSG VBSD VD1 R5 C6 VD2 C8 C4 C7 C5 C2 C1 ARCHIVE INFORMATION C13 C3 C9 R4 C12 R3 C11 R1 VBIAS1 VBIAS2 R2 C10 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MHVIC915R2 Test Circuit Component Layout MHVIC915R2 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM) 35 PAE, POWER ADDED EFFICIENCY (%) 34 G ps , POWER GAIN (dB) 33 32 31 30 29 28 27 26 0.1 1 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 10 100 85_C 25_C TC = −30_C 50 45 40 35 30 25 20 15 10 5 0 0.1 1 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 25_C 85_C ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Power Gain versus Output Power Figure 6. Power Added Efficiency versus Output Power 22 PAE, POWER ADDED EFFICIENCY (%) 35 TC = −30_C 34 G ps , POWER GAIN (dB) 33 32 31 30 29 28 750 800 850 900 950 1000 f, FREQUENCY (MHz) 85_C VDD = 26 Vdc, Pout = 2.5 W IDQ1 = 50 mA, IDQ2 = 140 mA 25_C 21.5 21 20.5 TC = −30_C 25_C VDD = 26 Vdc, Pout = 2.5 W IDQ1 = 50 mA, IDQ2 = 140 mA 750 800 850 900 950 85_C 1000 20 19.5 f, FREQUENCY (MHz) Figure 7. Power Gain versus Frequency Figure 8. Power Added Efficiency versus Frequency SPECTRAL REGROWTH @ 400 kHz (dBc) 1.2 EVM, ERROR VECTOR MAGNITUDE (%) 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 TC = −30_C 25_C 85_C −60 −62 −64 −66 −68 −70 −72 −74 −76 −78 −80 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 TC = −30_C 85_C 25_C Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 9. Error Vector Magnitude versus Output Power MHVIC915R2 6 Figure 10. Spectral Regrowth @ 400 kHz versus Output Power RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 10 100 TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM) TC = −30_C 25_C 85_C IMD, INTERMODULATION DISTORTION (dBc) SPECTRAL REGROWTH @ 600 kHz (dBc) −76.5 −77 −77.5 −78 −78.5 −79 −79.5 −80 −80.5 −81 −81.5 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 −20 −25 −30 −35 5th Order −40 −45 −50 −55 TONE SPACING (MHz) 7th Order VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 3rd Order ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Figure 11. Spectral Regrowth @ 600 kHz versus Output Power Figure 12. Two - Tone Broadband Performance 33 32 G ps , POWER GAIN (dB) 31 30 29 28 3 mW 27 26 25 5 10 15 20 25 30 35 VDD, SUPPLY VOLTAGE (V) IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz G ps , POWER GAIN (dB) Pin = 1 mW 2 mW 32.5 32 31.5 31 30.5 30 29.5 29 28.5 28 5 10 15 20 25 30 35 VDD, SUPPLY VOLTAGE (V) IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 0.07 mW 0.14 mW Pin = 0.275 mW Figure 13. Power Gain versus Supply Voltage Figure 14. Power Gain versus Supply Voltage −5 IRL, INPUT RETURN LOSS (dB) −35 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 −10 TC = −30_C 25_C −20 85_C −25 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 0.1 1 10 100 −40 −15 ACPR (dBc) −45 TC = 85_C 25_C −30_C 0 1 2 3 4 5 6 −50 −55 −60 −30 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 15. Input Return Loss versus Output Power Figure 16. Adjacent Channel Power Ratio versus Output Power MHVIC915R2 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION 0.1 1 10 100 ARCHIVE INFORMATION Z o = 50 Ω Zload Zin f = 750 MHz f = 960 MHz f = 960 MHz f = 750 MHz VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, Pout = 1.25 W CW f MHz 750 765 780 795 810 825 840 855 870 885 900 915 930 945 960 Zin Ω 42.11 - j2.79 40.86 - j1.37 40.09 + j0.06 39.77 + j1.52 39.89 + j3.01 40.49 + j4.39 41.48 + j5.70 42.89 + j6.73 43.51 + j7.03 46.81 + j7.87 49.21 + j7.74 51.79 + j7.02 54.48 + j5.65 57.05 + j3.61 59.16 + j0.75 Zload Ω 8.24 + j5.33 8.31 + j5.56 8.39 + j5.82 8.50 + j5.95 8.62 + j6.02 8.82 + j6.12 8.94 + j6.19 9.12 + j6.17 9.16 + j6.12 9.33 + j6.09 9.38 + j5.95 9.50 + j5.85 9.47 + j5.73 9.54 + j5.63 9.42 + j5.45 Z in Z load Device Under Test Output Matching Network Zin Zload = Device input impedance as measured from RF input to ground. = Test circuit impedance as measured from drain to ground. Figure 17. Series Equivalent Input and Load Impedance MHVIC915R2 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION DRIVER/PRE- DRIVER PERFORMANCE VBSD VBIAS BSG R5 Z11 VD1 C8 RF INPUT C7 1 NC 2 3 4 NC 16 15 14 13 12 11 Quiescent Current Temperature Compensation 10 NC 9 Z2 Z6 Z3 Z4 C1 C2 Z8 Z5 C4 Z7 C5 + VD2 C6 RF OUTPUT Z1 5 6 7 ARCHIVE INFORMATION Z12 VBIAS1 R1 C11 R3 C12 8 C3 Z9 Z10 VGS2 VBIAS2 R2 C10 R4 C9 Z1 Z2 Z3 Z4 Z5 Z6 0.0438″ x 0.400″ 50 Ω Microstrip 0.1709″ x 0.1004″ Microstrip (not including IC pad length) 0.1222″ x 0.1944″ Microstrip 0.0836″ x 0.3561″ Microstrip 0.0438″ x 0.2725″ Microstrip 0.0504″ x 0.3378″ Microstrip Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.0504″ x 0.480″ Microstrip 0.0252″ x 0.843″ Microstrip 0.0252″ x 0.167″ Microstrip 0.040″ x 0.850″ Microstrip 0.025″ x 0.400″ Microstrip 0.020″ x 0.710″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 18. MHVIC915R2 Test Fixture Schematic— Alternate Characterization for Driver/Pre - Driver Performance Table 7. MHVIC915R2 Test Fixture Component Designations and Values — Alternate Characterization for Driver/Pre - Driver Performance Part C1, C2 C3, C4 C5, C8, C10, C11 C6 C7, C9, C12 C13 R1, R2, R5 R3, R4 Description 2.4 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 μF X7R Chip Capacitors (1214) 10 μF, 50 V Electrolytic Capacitor 0.01 μF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Part Number ATC600S4R7CW GRM40 - 001COG470J050BD GRM42 - 2X7R105K050AL ECEV1HA100SP GRM40X7R103J050BD GRM40 - 001COG8R2C050BD RM73B2AT102J RM73B2AT104J Manufacturer ATC Murata Murata Panasonic Murata Murata KOA Speer KOA Speer MHVIC915R2 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION C13 VGS1 DRIVER/PRE- DRIVER PERFORMANCE MHVIC915 Rev 0 VBIAS BSG VBSD VD1 R5 C6 VD2 C8 C4 C7 C5 ARCHIVE INFORMATION C2 C1 C13 C3 C9 R4 C12 R3 C11 R1 VBIAS1 VBIAS2 R2 C10 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 19. MHVIC915R2 Test Circuit Component Layout— Alternate Characterization for Driver/Pre - Driver Performance MHVIC915R2 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS DRIVER/PRE- DRIVER PERFORMANCE ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −46 −48 −50 −52 −54 −56 −58 −60 VDD = 27 Vdc IDQ1 = 120 mA, IDQ2 = 140 mA f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 ACPR ARCHIVE INFORMATION 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Figure 20. Single - Carrier N - CDMA ACPR versus Output Power MHVIC915R2 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION −62 20 System Noise Floor f = 750 MHz f = 960 MHz Zload ARCHIVE INFORMATION Z o = 50 Ω f = 960 MHz Zin f = 750 MHz VDD = 27 Vdc, IDQ1 = 120 mA, IDQ2 = 140 mA, Pout = 0.5 W CW f MHz 750 765 780 795 810 825 840 855 870 885 900 915 930 945 960 Zin Ω 43.5 - j13.4 42.9 - j13.9 42.7 - j14.2 42.3 - j15.9 42.7 - j16.0 44.5 - j10.5 45.5 - j7.0 45.0 - j6.5 45.0 - j4.5 46.0 - j1.5 48.3 + j2.4 49.5 + j7.3 49.6 + j7.8 49.8 + j8.4 49.5 + j8.6 Zload Ω 4.7 + j41.5 5.5 + j43.8 6.0 + j43.7 6.8 + j42.8 7.5 + j42.2 7.8 + j40.5 7.2 + j39.2 6.3 + j38.4 6.4 + j38.7 7.9 + j38.5 9.3 + j36.8 9.4 + j35.3 8.6 + j34.5 7.8 + j34.3 7.6 + j34.3 Z Z Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network in load Figure 21. Series Equivalent Input and Load Impedance — Alternate Characterization for Driver/Pre - Driver Performance MHVIC915R2 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb M ARCHIVE INFORMATION A A2 DATUM PLANE SEATING PLANE c H C SECT W - W L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978 - 03 ISSUE C PFP- 16 PLASTIC RF Device Data Freescale Semiconductor ÇÉÇ ÇÉ ÇÉÇ ÇÉ b aaa M Y c1 CA S DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MHVIC915R2 13 ARCHIVE INFORMATION b1 ARCHIVE INFORMATION Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHVIC915R2 1Rev. 8, 8/2006 4 Document Number: MHVIC915R2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION How to Reach Us: