Freescale Semiconductor Technical Data
Document Number: MHW9182CN Rev. 4, 10/2006
CATV Amplifier Module
Features • Specified for 110 - and 152 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications • Output Stage Amplifier on Applications Requiring Low Power Dissipation Description • 24 Vdc Supply, 40 to 1000 MHz, CATV Forward Amplifier Module • Replaced MHW9182C. There are no form, fit or function changes with this part replacement. • RoHS Compliant
MHW9182CN
1000 MHz 19.4 dB GAIN 152 - CHANNEL CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +70 +28 - 20 to +100 - 40 to +100 Unit dBmV Vdc °C °C
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope 50 MHz 1000 MHz 40 - 1000 MHz Symbol BW Gp S GF IRL/ORL 20 — CSO110 CSO152 — — — — - 70 - 69 — 0.006 - 63 - 63 dB dB/MHz dBc 110 - Channel FLAT 152 - Channel FLAT Min 40 18 18.7 0.4 — Typ — 18.5 19.4 0.9 0.4 Max 1000 19 20.7 1.4 0.8 Unit MHz dB dB dB
Gain Flatness (40 - 1000 MHz, Peak to Valley) Return Loss — Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 38 dBmV/ch., Worst Case)
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MHW9182CN 1
RF Device Data Freescale Semiconductor
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 38 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 38 dBmV/ch., Worst Case) Noise Figure 110 - Channel FLAT 152 - Channel FLAT 110 - Channel FLAT 152 - Channel FLAT 50 MHz 550 MHz 860 MHz 1000 MHz Symbol XMD110 XMD152 CTB110 CTB152 NF Min — — — — — — — — 180 Typ - 66 - 65 - 68 - 64 4.0 4.5 5.5 6.0 210 Max - 64 - 61 dBc - 66 - 61 5.0 — — 7.5 240 dB Unit dBc
DC Current (VDC = 24 V, TC = 30°C)
IDC
mA
MHW9182CN 2 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A Z J A S B V R
DIM A B C D E F G J K L N P Q R S U V W X Y Z
2X
Q 0.010
M
TF
M
A
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. INCHES MIN MAX −−−− 1.775 −−−− 1.085 −−−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 −−−− 0.435 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−−− 45.085 −−−− 27.559 −−−− 21.336 0.381 0.533 11.811 12.954 7.620 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−−− 15.240 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279
F
F
L
2X
2X 6−32UNC−2B
U
0.010 E
M
ZTA
M
12
3
5
789
N
C E K Z
7X
W
T
4X
G
2X
X
D
M
P X T A
M
Y
M
0.02
X
0.010
M
Z
TA
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9.
RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT
CASE 1302 - 01 ISSUE E
MHW9182CN RF Device Data Freescale Semiconductor 3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 Date Oct. 2006 • Description Added missing minus sign to CSO110 Typ value, p. 1
MHW9182CN 4 RF Device Data Freescale Semiconductor
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MHW9182CN
Document Number: RF Device DataMHW9182CN Rev. 4, 10/2006 Freescale Semiconductor
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