Freescale Semiconductor Data Sheet: Product Preview
Document Number: K30P81M100SF2 Rev. 1, 11/2010
K30 Sub-Family Data Sheet
Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 105°C
K30P81M100SF2
Supports the following: MK30N512VLK100, MK30N512VMB100
• Human-machine interface – Segment LCD controller supporting up to 40 frontplanes and 8 backplanes, or 44 frontplanes and 4 backplanes – Low-power hardware touch sensor interface (TSI) – General-purpose input/output • Analog modules – 16-bit SAR ADC with PGA (x64) – 12-bit DAC – Analog comparator (CMP) containing a 6-bit DAC and programmable reference input – Voltage reference • Timers – Programmable delay block – Eight-channel motor control/general purpose/PWM timers – Two-channel quadrature decoder/general purpose timers – Periodic interrupt timers – 16-bit low-power timer – Carrier modulator transmitter – Real-time clock • Communication interfaces – Controller Area Network (CAN) module – SPI modules – I2C modules – UART modules – Secure Digital host controller (SDHC) – I2S
• Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz • Memories and memory interfaces – Up to 512 KB program flash memory on nonFlexMemory devices – Up to 128 KB RAM – Serial programming interface (EzPort) • Clocks – 1 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator
• System peripherals – 10 low-power modes to provide power optimization based on application requirements – Memory protection unit with multi-master protection – 16-channel DMA controller, supporting up to 64 request sources – External watchdog monitor – Software watchdog – Low-leakage wakeup unit • Security and integrity modules – Hardware CRC module to support fast cyclic redundancy checks – Hardware random-number generator – 128-bit unique identification (ID) number per chip
This document contains information on a product under development. Freescale reserves the right to change or discontinue this product without notice. © 2010–2010 Freescale Semiconductor, Inc. Preliminary
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Table of Contents
1 Ordering parts...........................................................................4 1.1 Determining valid orderable parts......................................4 2 Part identification......................................................................4 2.1 Description.........................................................................4 2.2 Format...............................................................................4 2.3 Fields.................................................................................4 2.4 Example............................................................................5 3 Terminology and guidelines......................................................5 3.1 Definition: Operating requirement......................................5 3.2 Definition: Operating behavior...........................................6 3.3 Definition: Attribute............................................................6 6.3.3 6.1 Core modules....................................................................19 6.1.1 6.1.2 Debug trace timing specifications.........................19 JTAG electricals....................................................20 6.2 System modules................................................................23 6.3 Clock modules...................................................................23 6.3.1 6.3.2 MCG Specifications...............................................23 Oscillator Electrical Characteristics.......................25 6.3.2.1 6.3.2.2 Oscillator DC Electrical Specifications 25 Oscillator frequency specifications......26
3.4 Definition: Rating...............................................................7 3.5 Result of exceeding a rating..............................................7 3.6 Relationship between ratings and operating
requirements......................................................................7 3.7 Guidelines for ratings and operating requirements............8 3.8 Definition: Typical value.....................................................8
3.9 Typical Value Conditions...................................................9 4 Ratings......................................................................................9
4.1 Thermal handling ratings...................................................9
4.2 Moisture handling ratings..................................................10
4.3 ESD handling ratings.........................................................10
4.4 Voltage and current operating ratings...............................10 5 General.....................................................................................11
5.1 Nonswitching electrical specifications...............................11 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5
Voltage and Current Operating Requirements......11 LVD and POR operating requirements.................12 Voltage and current operating behaviors..............13
Power mode transition operating behaviors..........13 Power consumption operating behaviors..............14 5.1.5.1 Diagram: Typical IDD_RUN operating behavior...............................................16
5.1.6 5.1.7 5.1.8
EMC radiated emissions operating behaviors.......17 Designing with radiated emissions in mind...........18 Capacitance attributes..........................................18
5.2 Switching electrical specifications.....................................18 5.3 Thermal specifications.......................................................18 5.3.1 5.3.2 Thermal operating requirements...........................18 Thermal attributes.................................................19 6.6.4
6 Peripheral operating requirements and behaviors....................19
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6.3.3.1 6.3.3.2 6.4.1 6.4.1.1 6.4.1.2 6.4.1.3 6.4.1.4 6.4.2 6.6.1 6.6.1.1 6.6.1.2 6.6.1.3 6.6.1.4 6.6.2 6.6.3 6.6.3.1 6.6.3.2
32kHz Oscillator Electrical Characteristics............27 32kHz Oscillator DC Electrical Specifications......................................27 32kHz Oscillator Frequency Specifications......................................27
6.4 Memories and memory interfaces.....................................28 Flash (FTFL) Electrical Characteristics.................28 Flash Timing Parameters — Program and Erase............................................28
Flash Timing Parameters — Commands..........................................28 Flash (FTFL) Current and Power Parameters..........................................29
Reliability Characteristics....................29
EzPort Switching Specifications............................29
6.5 Security and integrity modules..........................................30 6.6 Analog...............................................................................30 ADC electrical specifications.................................31 16-bit ADC operating conditions..........31 16-bit ADC electrical characteristics....33 16-bit ADC with PGA operating conditions............................................36 16-bit ADC with PGA characteristics...37
CMP and 6-bit DAC electrical specifications.........38 12-bit DAC electrical characteristics.....................39 12-bit DAC operating requirements.....39 12-bit DAC operating behaviors..........40
Voltage Reference Electrical Specifications..........42
6.7 Timers................................................................................43 6.8 Communication interfaces.................................................43
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6.8.1
DSPI Switching Specifications for Low-speed Operation..............................................................44
6.9.2 6.9.3
TSI Electrical Specifications..................................50 LCD electrical characteristics................................51
6.8.2
DSPI Switching Specifications (High-speed mode)....................................................................45
7 Dimensions...............................................................................52 7.1 Obtaining package dimensions.........................................52 8 Pinout........................................................................................53 8.1 K30 Signal Multiplexing and Pin Assignments..................53 8.2 K30 Pinouts.......................................................................56 9 Revision History........................................................................57
6.8.3 6.8.4
SDHC Specifications.............................................47 I2S Switching Specifications.................................48
6.9 Human-machine interfaces (HMI)......................................50 6.9.1 General Switching Specifications..........................50
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K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
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Ordering parts
1 Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part numbers for this device, go to www.freescale.com and perform a part number search for the following device numbers: PK30 and MK30.
2 Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format: Q K## M FFF T PP CCC N
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations are valid):
Field Q K## M Qualification status Kinetis family Flash memory type Description Values • M = Fully qualified, general market flow • P = Prequalification • K30 • N = Program flash only • X = Program flash and FlexMemory Table continues on the next page...
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Terminology and guidelines Field FFF Description Program flash memory size • • • • • • 32 = 32 KB 64 = 64 KB 128 = 128 KB 256 = 256 KB 512 = 512 KB 1M0 = 1 MB Values
T PP
Temperature range (°C) Package identifier
• V = –40 to 105 • • • • • • • • • • • • • • • • • • FM = 32 QFN (5 mm x 5 mm) FT = 48 QFN (7 mm x 7 mm) LF = 48 LQFP (7 mm x 7 mm) FX = 64 QFN (9 mm x 9 mm) LH = 64 LQFP (10 mm x 10 mm) LK = 80 LQFP (12 mm x 12 mm) MB = 81 MAPBGA (8 mm x 8 mm) LL = 100 LQFP (14 mm x 14 mm) ML = 104 MAPBGA (8 mm x 8 mm) LQ = 144 LQFP (20 mm x 20 mm) MD = 144 MAPBGA (13 mm x 13 mm) MF = 196 MAPBGA (15 mm x 15 mm) MJ = 256 MAPBGA (17 mm x 17 mm) 50 = 50 MHz 72 = 72 MHz 100 = 100 MHz 120 = 120 MHz 150 = 150 MHz
CCC
Maximum CPU frequency (MHz)
N
Packaging type
2.4 Example
This is an example part number: MK30X256VMD100
3 Terminology and guidelines
3.1 Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical characteristic that you must guarantee during operation to avoid incorrect operation and possibly decreasing the useful life of the chip.
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• R = Tape and reel • (Blank) = Trays
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Terminology and guidelines
3.1.1 Example
This is an example of an operating requirement, which you must meet for the accompanying operating behaviors to be guaranteed:
Symbol VDD Description 1.0 V core supply volt‐ age 0.9 Min. 1.1 Max. V Unit
3.2 Definition: Operating behavior
An operating behavior is a specified value or range of values for a technical characteristic that are guaranteed during operation if you meet the operating requirements and any other specified conditions.
3.2.1 Example
This is an example of an operating behavior, which is guaranteed if you meet the accompanying operating requirements:
Symbol IWP Description Min. Max. Unit Digital I/O weak pullup/ 10 pulldown current 130 µA
3.3 Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that are guaranteed, regardless of whether you meet the operating requirements.
3.3.1 Example
This is an example of an attribute:
Symbol CIN_D Description Input capacitance: digi‐ — tal pins Min. 7 Max. pF Unit
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Terminology and guidelines
3.4 Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if exceeded, may cause permanent chip failure: • Operating ratings apply during operation of the chip. • Handling ratings apply when the chip is not powered.
This is an example of an operating rating:
Symbol VDD Description 1.0 V core supply volt‐ age –0.3
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Min. Max. 1.2 V
The likelihood of permanent chip failure increases rapidly as soon as a characteristic begins to exceed one of its operating ratings.
Operating rating
3.4.1 Example
Unit
3.5 Result of exceeding a rating
40 Failures in time (ppm) 30
20
10
0
Measured characteristic
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Preliminary
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Terminology and guidelines
3.6 Relationship between ratings and operating requirements
g tin h or an dlin g in rat g( mi n.) ing ui req in. (m nt me re ) ui req ax (m nt me re .) h or g dlin an ( ing rat x.) ma g g tin
Op
era
Op
t era
era Op
tin
era Op
Fatal range
- Probable permanent failure
Limited operating range
- No permanent failure - Possible decreased life - Possible incorrect operation
Normal operating range
- No permanent failure - Correct operation
Limited operating range
- No permanent failure - Possible decreased life - Possible incorrect operation
Fatal range
- Probable permanent failure
Handling range
- No permanent failure –ȡ
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Description Min. 10 70 Typ. 130 Max. µA
ȡ
3.7 Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings. • During normal operation, don’t exceed any of the chip’s operating requirements. • If you must exceed an operating requirement at times other than during normal operation (for example, during power sequencing), limit the duration as much as possible.
3.8 Definition: Typical value
A typical value is a specified value for a technical characteristic that: • Lies within the range of values specified by the operating behavior • Given the typical manufacturing process, is representative of that characteristic during operation when you meet the typical-value conditions or other specified conditions Typical values are provided as design guidelines and are neither tested nor guaranteed.
3.8.1 Example 1
This is an example of an operating behavior that includes a typical value:
Symbol IWP Unit Digital I/O weak pullup/pulldown current
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Ratings
3.8.2 Example 2
This is an example of a chart that shows typical values for various voltage and temperature conditions:
5000 4500 4000 3500 IDD_STOP (μA) 3000 2500 2000 1500 1000 500 0 0.90 TJ
3.9 Typical Value Conditions
Typical values assume you meet the following conditions (or other conditions as specified):
Symbol TA VDD Description Value Unit Ambient temperature 3.3 V supply voltage 25 3.3 °C V
4 Ratings
Freescale Semiconductor, Inc.
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105 °C 25 °C –40 °C 0.95 1.00 1.05 1.10 VDD (V)
150 °C
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Ratings
4.1 Thermal handling ratings
Symbol TSTG TSDR Description Storage temperature Solder temperature, lead-free Solder temperature, leaded Min. –55 — — Max. 150 260 245 Unit °C °C Notes 1 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life. 2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol MSL Description Moisture sensitivity level
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Min. — Max. 3 Unit — Min. Max. Unit V V -2000 -500 -100 +2000 +500 +100 mA Min. –0.3 — –0.3 –0.3 Max. 3.8 185 5.5 VDD + 0.3 Table continues on the next page...
Notes 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol VHBM VCDM ILAT Description
Notes 1 2
Electrostatic discharge voltage, human body model
Electrostatic discharge voltage, charged-device model Latch-up current at ambient temperature of 85°C
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM). 2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
4.4 Voltage and current operating ratings
Symbol VDD IDD VDIO VAIO Description Digital supply voltage Digital supply current Digital input voltage (except RESET, EXTAL, and XTAL) Analog, RESET, EXTAL, and XTAL input voltage Unit V mA V V
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General Symbol ID VDDA IDDA VBAT VRAM VRFVBAT Description Instantaneous maximum current single pin limit (applies to all port pins) Analog supply voltage Analog supply current1 RTC battery supply voltage VDD voltage required to retain RAM VBAT voltage required to retain the VBAT register file Min. –25 VDD – 0.3 TBD –0.3 1.2 TBD Max. 25 VDD + 0.3 TBD 3.8 — — Unit mA V mA V V V
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See each module's specification for its supply current.
5 General
5.1 Nonswitching electrical specifications
5.1.1 Voltage and Current Operating Requirements
Symbol VDD VDDA Description Min.
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Table 1. Voltage and current operating requirements
Max. 3.6 3.6 0.1 0.1 1.71 1.71 –0.1 –0.1 Unit V V V V 0.7 × VDD — — V 0.75 × VDD V — — 0.06 × VDD Table continues on the next page... 0.35 × VDD 0.3 × VDD — V V V
Notes
Supply voltage
Analog supply voltage
VDD – VDDA VDD-to-VDDA differential voltage VSS – VSSA VSS-to-VSSA differential voltage VIH Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V • 1.7 V ≤ VDD ≤ 2.7 V VIL Input low voltage • 2.7 V ≤ VDD ≤ 3.6 V • 1.7 V ≤ VDD ≤ 2.7 V VHYS Input hysteresis
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General
Table 1. Voltage and current operating requirements (continued)
Symbol IIC Description DC injection current — single pin • VIN > VDD • VIN < VSS DC injection current — total MCU limit, includes sum of all stressed pins • VIN > VDD • VIN < VSS 0 0 2 –0.2 mA mA 1 0 0 25 –5 mA mA Min. Max. Unit Notes 1
5.1.2 LVD and POR operating requirements
Symbol VPOR VLVDH Description Min.
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Table 2. LVD and POR operating requirements
Typ. 1.1 TBD TBD Max. TBD TBD V V 2.56 TBD TBD TBD TBD 2.70 2.80 2.90 3.00 60 TBD TBD TBD TBD TBD TBD TBD V V V V V TBD TBD TBD TBD 1.80 1.90 2.00 2.10 TBD TBD TBD TBD V V V V Table continues on the next page...
1. All functional non-supply pins are internally clamped to VSS and VDD. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if clock rate is very low (which would reduce overall power consumption).
Unit
Notes
Falling VDD POR detect voltage
Falling low-voltage detect threshold — high range (LVDV=01)
Low-voltage warning thresholds — high range VLVW1 VLVW2 VLVW3 VLVW4 VHYS VLVDL • Level 1 falling (LVWV=00) • Level 2 falling (LVWV=01) • Level 3 falling (LVWV=10) • Level 4 falling (LVWV=11)
1
Low-voltage inhibit reset/recover hysteresis — high range Falling low-voltage detect threshold — low range (LVDV=00) Low-voltage warning thresholds — low range
mV
1
VLVW1 VLVW2 VLVW3 VLVW4
• Level 1 falling (LVWV=00) • Level 2 falling (LVWV=01) • Level 3 falling (LVWV=10) • Level 4 falling (LVWV=11)
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General
Table 2. LVD and POR operating requirements (continued)
Symbol VHYS VBG tLPO Description Low-voltage inhibit reset/recover hysteresis — low range Bandgap voltage reference Internal low power oscillator period factory trimmed 1. Rising thresholds are falling threshold + VHYS TBD TBD Min. Typ. 40 1.00 1000 TBD TBD Max. Unit mV V μs Notes
5.1.3 Voltage and current operating behaviors
Symbol VOH Description Min.
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Table 3. Voltage and current operating behaviors
Max. Unit VDD – 0.5 VDD – 0.5 — — V V VDD – 0.5 VDD – 0.5 — — — V V 100 mA — — 0.5 0.5 V V — — — — — 30 0.5 0.5 V V 100 1 1 50 mA μA μA kΩ
Notes
Output high voltage — high drive strength • 2.7 V ≤ VDD ≤ 3.6 V, IOH = -10mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -3mA
Output high voltage — low drive strength • 2.7 V ≤ VDD ≤ 3.6 V, IOH = -2mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6mA IOHT VOL Output high current total for all ports
Output low voltage — high drive strength • 2.7 V ≤ VDD ≤ 3.6 V, IOL = 10mA • 1.71 V ≤ VDD ≤ 2.7 V, IOL = 3mA
Output low voltage — low drive strength • 2.7 V ≤ VDD ≤ 3.6 V, IOL = 2mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6mA IOLT IIN IOZ RPU and RPD Output low current total for all ports Input leakage current (per pin) Hi-Z (off-state) leakage current (per pin)
Internal weak pullup and pulldown resistors
1
1. Measured at VIL max and VDD min
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Preliminary
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General
5.1.4 Power mode transition operating behaviors
In the table below, all specifications except tPOR, assume the following clock configuration: • CPU and system clocks = 100MHz • Bus clock = 50 MHz • Flash clock = 25 MHz
Table 4. Power mode transition operating behaviors
Symbol tPOR Description After a POR event, amount of time from the point VDD reaches 1.8V to execution of the first instruction across the operating temperature range of the chip. RUN → VLLS1 → RUN • RUN → VLLS1 • VLLS1 → RUN Min. — Max. 300 Unit μs Notes 1
RUN → VLLS2 → RUN • RUN → VLLS2 • VLLS2 → RUN
RUN → VLLS3 → RUN • RUN → VLLS3 • VLLS3 → RUN RUN → LLS → RUN • RUN → LLS • LLS → RUN
RUN → STOP → RUN • RUN → STOP • STOP → RUN RUN → VLPS → RUN • RUN → VLPS • VLPS → RUN
1. Normal boot (FTFL_OPT[LPBOOT]=1)
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— — 4.1 μs μs 123.8 — — 4.1 μs μs 49.3 — — 4.1 μs μs 49.2 — — 4.1 5.9 μs μs — — 4.1 4.2 μs μs — — 4.1 5.8 μs μs
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General
5.1.5 Power consumption operating behaviors
Table 5. Power consumption operating behaviors
Symbol IDD_RUN Description Run mode current — all peripheral clocks disa‐ bled, code executing from flash • @ 1.8V • @ 3.0V IDD_RUN Run mode current — all peripheral clocks ena‐ bled, code executing from flash • @ 1.8V • @ 3.0V — — 55 56 TBD TBD mA mA 3 — — 40 42 TBD TBD mA mA 2 Min. Typ. Max. Unit Notes 1
IDD_RUN_M Run mode current — all peripheral clocks ena‐ bled and peripherals active, code executing from AX flash • @ 1.8V • @ 3.0V IDD_WAIT IDD_STOP IDD_VLPR IDD_VLPR IDD_VLPW IDD_VLPS IDD_LLS IDD_VLLS3
Wait mode current at 3.0 V — all peripheral clocks disabled Stop mode current at 3.0 V
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— — — — — — — — — 85 85 TBD TBD TBD TBD TBD TBD TBD TBD TBD 15 1.4 1.25 TBD 1.05 30 12 μA μA — — — — 8 TBD TBD TBD TBD μA 4 2 550 μA μA nA
mA mA mA mA mA mA mA 5 6 7 4
Very-low-power run mode current at 3.0 V — all peripheral clocks disabled Very-low-power run mode current at 3.0 V — all peripheral clocks enabled Very-low-power wait mode current at 3.0 V
Very-low-power stop mode current at 3.0 V Low leakage stop mode current at 3.0 V
Very low-leakage stop mode 3 current at 3.0 V • 128KB RAM devices
IDD_VLLS2 IDD_VLLS1 IDD_VBAT
Very low-leakage stop mode 2 current at 3.0 V Very low-leakage stop mode 1 current at 3.0 V Average current when CPU is not accessing RTC registers at 3.0 V
1. 100MHz core and system clock, 50MHz bus clock, and 25MHz flash clock . MCG configured for FEI mode. All peripheral clocks disabled. 2. 100MHz core and system clock, 50MHz bus clock, and 25MHz flash clock. MCG configured for FEI mode. All peripheral clocks enabled, but peripherals are not in active operation. 3. 100MHz core and system clock, 50MHz bus clock, and 25MHz flash clock. MCG configured for FEI mode. All peripheral clocks enabled, and peripherals are in active operation. 4. 25MHz core and system clock, 25MHz bus clock, and 12.5MHz flash clock. MCG configured for FEI mode. 5. 2 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for fast IRCLK mode. All peripheral clocks disabled. Code executing from flash. 6. 2 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for fast IRCLK mode. All peripheral clocks enabled but peripherals are not in active operation. Code executing from flash.
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General 7. 2 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for fast IRCLK mode. All peripheral clocks disabled.
5.1.5.1 • • • • •
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions: MCG in FEI mode (39.0625 kHz IRC), except for 1 MHz core (FBE) All peripheral clocks disabled except FTFL LVD disabled No GPIOs toggled Code execution from flash
Figure 1. Run mode supply current vs. core frequency — all peripheral clocks disabled
The following data was measured under these conditions: • • • • •
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MCG in FEI mode (39.0625 kHz IRC), except for 1 MHz core (FBE) All peripheral clocks enabled but peripherals are not in active operation LVD disabled No GPIOs toggled Code execution from flash
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General
Figure 2. Run mode supply current vs. core frequency — all peripheral clocks enabled
5.1.6 EMC radiated emissions operating behaviors
Symbol VRE1 VRE2 VRE3 VRE4 Description Frequency band (MHz) 0.15–50 50–150 150–500 500–1000 0.15–1000
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Table 6. EMC radiated emissions operating behaviors
Typ. Unit TBD TBD TBD TBD TBD — dBμV
Notes 1, 2
Radiated emissions voltage, band 1 Radiated emissions voltage, band 2 Radiated emissions voltage, band 3 Radiated emissions voltage, band 4
VRE_IEC_SAE IEC and SAE level
2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 1: General Conditions and Definitions, IEC Standard 61967-2, Integrated Circuits - Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/ Wideband TEM (GTEM) Cell Method. 2. VDD = 3 V, TA = 25 °C, fOSC = 16 MHz (crystal), fBUS = 20 MHz 3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method.
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General
5.1.7 Designing with radiated emissions in mind
1. To find application notes that provide guidance on designing your system to minimize interference from radiated emissions, go to www.freescale.com and perform a keyword search for “EMC design.”
5.1.8 Capacitance attributes
Table 7. Capacitance attributes
Symbol CIN_A CIN_D Description
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Min. — — Max. 7 7
Unit pF pF
Input capacitance: analog pins Input capacitance: digital pins
5.2 Switching electrical specifications
Symbol Description
Table 8. Device clock specifications
Min. Normal run mode
Max.
Unit
Notes
fSYS fBUS fFLASH
System and core clock Bus clock
— — —
100 50 25
MHz MHz MHz
Flash clock
VLPR mode
fSYS fBUS fFLASH
System and core clock Bus clock
— — —
2 2 1
MHz MHz MHz
Flash clock
5.3 Thermal specifications
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Peripheral operating requirements and behaviors
5.3.1 Thermal operating requirements
Table 9. Thermal operating requirements
Symbol TJ TA Description Die junction temperature Ambient temperature Min. –40 –40 Max. 125 105 Unit °C °C
5.3.2 Thermal attributes
Singlelayer (1s) Four-layer (2s2p) Singlelayer (1s) Four-layer (2s2p) — — —
RθJA RθJA RθJMA RθJMA RθJB RθJC ΨJT
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Thermal resistance, junction to ambient (natural convection) TBD TBD °C/W Thermal resistance, junction to ambient (natural convection) TBD TBD °C/W Thermal resistance, junction to ambient (200 ft./ min. air speed) TBD TBD TBD TBD °C/W °C/W Thermal resistance, junction to ambient (200 ft./ min. air speed) Thermal resistance, junction to board Thermal resistance, junction to case TBD TBD °C/W TBD TBD °C/W Thermal characterization parameter, junction to package top outside center (natural convection) TBD TBD °C/W
Board type
Symbol
Description
81 80 LQFP Unit MAPBGA
Notes
1 1 1 1 2 3 4
6 Peripheral operating requirements and behaviors
6.1 Core modules
Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions—Natural Convection (Still Air), or EIA/JEDEC Standard JESD51-6, Integrated Circuit Thermal Test Method Environmental Conditions—Forced Convection (Moving Air). 2. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental Conditions —Junction-to-Board. 3. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate temperature used for the case temperature. The value includes the thermal resistance of the interface material between the top of the package and the cold plate. 4. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions—Natural Convection (Still Air).
1.
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
19
Peripheral operating requirements and behaviors
6.1.1 Debug trace timing specifications
Table 10. Debug trace operating behaviors
Symbol Tcyc Twl Twh Tr Tf Ts Th Description Clock period Low pulse width High pulse width Clock and data rise time Clock and data fall time Data setup Data hold Min. Max. Unit MHz ns ns ns ns ns ns Frequency dependent 2 2 — — 3 2 — — 3 3 — —
TRACE_CLKOUT TRACE_D[3:0]
6.1.2 JTAG electricals
Symbol Description Operating voltage J1
Pr el im in ar y
Figure 3. TRACE_CLKOUT specifications
Ts Th Ts Th
Figure 4. Trace data specifications
Table 11. JTAG electricals
Min. 2.7 Max. 3.6 Unit V MHz 0 0 1/J1 Table continues on the next page... 25 50 — ns
TCLK frequency of operation • JTAG and CJTAG • Serial Wire Debug
J2
TCLK cycle period
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
20
Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 11. JTAG electricals (continued)
Symbol J3 Description TCLK clock pulse width • JTAG and CJTAG • Serial Wire Debug J4 J5 J6 J7 J8 J9 J10 J11 J12 J13 J14 TCLK rise and fall times Boundary scan input data setup time to TCLK rise Boundary scan input data hold time after TCLK rise TCLK low to boundary scan output data valid TCLK low to boundary scan output high-Z 20 10 — 20 0 — — — — 3 — — 30 30 — — 4 4 ns ns ns ns ns ns ns ns ns ns ns Min. Max. Unit ns
TMS, TDI input data setup time to TCLK rise
TMS, TDI input data hold time after TCLK rise TCLK low to TDO data valid TCLK low to TDO high-Z TRST assert time
TRST setup time (negation) to TCLK high
TCLK (input)
Freescale Semiconductor, Inc.
Pr el im in ar y
16 1 — — 100 8 — —
J2 J3 J3 J4 J4
Figure 5. Test clock input timing
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
21
Peripheral operating requirements and behaviors
TCLK
J5 J6
Data inputs
J7
Input data valid
Data outputs
J8
Output data valid
Data outputs
Data outputs
TCLK
TDI/TMS
TDO
TDO
J11
TDO
22
Pr el im in ar y
J7 Output data valid
Figure 6. Boundary scan (JTAG) timing
J9
J10
Input data valid
J11
Output data valid
J12
Output data valid
Figure 7. Test Access Port timing
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
TCLK
J14 J13
TRST
Figure 8. TRST timing
There are no specifications necessary for the device's system modules.
6.3 Clock modules
6.3.1 MCG Specifications
Symbol fints_ft fints_t tirefsts Δfdco_res_t Description
Pr el im in ar y
Table 12. MCG specifications
Min. — Typ. Max. — 32.768 — 31.25 — — 39.0625 4 TBD µs ± 0.1 ± 0.3 — ± 0.2 ± 0.5 — + 0.5 - 1.0 — ± 0.5 ± TBD ± 3.5 3.875 3 4 — 4.125 5 Table continues on the next page...
6.2 System modules
Unit kHz kHz
Notes
Internal reference frequency (slow clock) — facto‐ ry trimmed at nominal VDD and 25°C Internal reference frequency (slow clock) — user trimmed Internal reference (slow clock) startup time
Resolution of trimmed DCO output frequency at fixed voltage and temperature — using SCTRIM and SCFTRIM
%fdco
Δfdco_res_t Resolution of trimmed DCO output frequency at fixed voltage and temperature — using SCTRIM only Δfdco_t Δfdco_t
%fdco
Total deviation of trimmed DCO output frequency over voltage and temperature Total deviation of trimmed DCO output frequency over fixed voltage and temperature range of 0– 70°C Internal reference frequency (fast clock) — factory trimmed at nominal VDD and 25°C Internal reference frequency (fast clock) — user trimmed
%fdco %fdco
fintf_ft fintf_t
MHz MHz
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
23
Peripheral operating requirements and behaviors
Table 12. MCG specifications (continued)
Symbol tirefstf floc_low floc_high Description Internal reference startup time (fast clock) Loss of external clock minimum frequency — RANGE = 00 Loss of external clock minimum frequency — RANGE = 01, 10, or 11 FLL fdco_t DCO output fre‐ quency range — user trimmed and DMX32=0 Low range (DRS=00) 640 × fints_t Mid range (DRS=01) 1280 × fints_t 40 41.94 50 MHz 20 20.97 25 MHz 1, 2 Min. — (3/5) x fints_t (16/5) x fints_t Typ. TBD — — Max. TBD — — Unit µs kHz kHz Notes
fdco_t_DMX3 DCO output fre‐ quency range — 2 reference = 32,768Hz and DMX32=1
Pr el im in ar y
Mid-high range (DRS=10 192)0 × fints_t 60 62.91 75 High range (DRS=11) 2560 × fints_t 80 83.89 100 Low range (DRS=00) 732 × fints_t — 23.99 — Mid range (DRS=01) 1464 × fints_t — 47.97 — Mid-high range (DRS=10) 2197 × fints_t — 71.99 — High range (DRS=11) 2929 × fints_t — 95.98 — — — — TBD TBD — TBD TBD 1 ps ps PLL 48.0 2.0 — — ± 1.49 ± 4.47 — — — 400 TBD — — — 100 4.0 — — ± 2.98 ± 5.97 0.15 + 1075(1/ fpll_ref) ps ps % %
MHz
MHz
MHz
3
MHz
MHz
MHz
Jcyc_fll Jacc_fll tfll_acquire
FLL period jitter
4
FLL accumulated jitter of DCO output over a 1µs time window FLL target frequency acquisition time
ms
5
fvco fpll_ref Jcyc_pll Jacc_pll Dlock Dunl tpll_lock
VCO operating frequency PLL reference frequency range PLL period jitter PLL accumulated jitter over 1µs window Lock entry frequency tolerance Lock exit frequency tolerance Lock detector detection time
MHz MHz 6, 7 6,7
ms
8
1. The resulting system clock frequencies should not exceed their maximum specified values.
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
24
Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors 2. 3. 4. 5. This specification includes the 2% precision of the internal reference frequency (slow clock). The resulting clock frequency must not exceed the maximum specified clock frequency of the device. This specification was obtained at TBD frequency. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed, DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 6. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of each PCB and results will vary. 7. This specification was obtained at internal frequency of TBD. 8. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
This section provides the electrical characteristics of the module. 6.3.2.1
Symbol VDD33OSC IDDOSC
Oscillator DC Electrical Specifications
Description Min.
Table 13. Oscillator DC electrical specifications, (VSSOSC= 0 VDC) (TA = TL to TH)
Typ. — Max. 3.6 Unit V Notes 3.3 V supply voltage 1.71
Supply current — low-power mode • 32 kHz • 1 MHz • 4 MHz • 8 MHz
Pr el im in ar y
— — — — — — — 500 100 200 300 700 1.2 1.5 — — — — — — — nA μA μA μA μA — — — — — — — — — Table continues on the next page... 25 200 400 800 1.5 3 4 — — — — — — — — — — — μA μA μA μA
6.3.2 Oscillator Electrical Characteristics
1
• 16 MHz • 24 MHz • 32 MHz IDDOSC
mA mA 1
Supply current — high gain mode • 32 kHz • 1 MHz • 4 MHz • 8 MHz • 16 MHz • 24 MHz • 32 MHz
mA mA mA 2, 3 2,3
Cx Cy
EXTAL load capacitance XTAL load capacitance
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
25
Peripheral operating requirements and behaviors
Table 13. Oscillator DC electrical specifications, (VSSOSC= 0 VDC) (TA = TL to TH) (continued)
Symbol RF Description Feedback resistor — low-frequency, low-power mode Feedback resistor — low-frequency, high-gain mode Feedback resistor — high-frequency, low-power mode (1 – 8 MHz, 8 – 32 MHz) Feedback resistor — high-frequency, high-gain mode (1 – 8 MHz, 8 – 32 MHz) RS Series resistor — low-frequency, low-power mode Min. — — — — — — — Typ. — 10 — 1 — Max. — — — — — — — Unit MΩ MΩ MΩ MΩ kΩ kΩ kΩ Notes 2,3
Series resistor — low-frequency, high-gain mode Series resistor — high-frequency, low-power mode Series resistor — high-frequency, high-gain mode • 1 MHz resonator • 2 MHz resonator • 4 MHz resonator • 8 MHz resonator
• 16 MHz resonator • 20 MHz resonator • 32 MHz resonator Vpp
Peak-to-peak amplitude of oscillation (oscillator mode) — low-frequency, low-power mode Peak-to-peak amplitude of oscillation (oscillator mode) — low-frequency, high-gain mode Peak-to-peak amplitude of oscillation (oscillator mode) — high-frequency, low-power mode Peak-to-peak amplitude of oscillation (oscillator mode) — high-frequency, high-gain mode
1. VDD33OSC=3.3 V, Temperature =27 °C, Cx/Cy=20 pF 2. See crystal or resonator manufacturer's recommendation 3. RF and Cx,Cy are integrated in low-frequency, low-power mode and must not be attached externally
26
Pr el im in ar y
200 — — — — — — — — — 6.6 3.3 0 0 0 0 0 — — — — — — — — — — — kΩ kΩ kΩ kΩ kΩ kΩ kΩ V V V V 0.6 0.75 × VDD33OSC — VDD33OSC 0.6 0.75 × VDD33OSC VDD33OSC
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6.3.2.2
Oscillator frequency specifications
Table 14. Oscillator frequency specifications, (VDD33OSC = VDD33OSC (min) to VDD33OSC (max), TA = TL to TH)
Symbol fosc_lo fosc_hi_1 fosc_hi_2 tdc_extal tcst Description Oscillator crystal or resonator frequency — low frequency mode Oscillator crystal or resonator frequency — high frequency mode (low range) Oscillator crystal or resonator frequency — high frequency mode (high range) Input clock duty cycle (external clock mode) Min. 32 1 8 40 — — — — Typ. — — — 50 Max. 40 8 32 60 — — — — Unit kHz MHz MHz % Notes
Crystal start-up time — 32 kHz low-frequency, low-power mode Crystal start-up time — 32 kHz low-frequency, high-gain mode
Pr el im in ar y
TBD 800 4 3 ms ms ms ms Min. 1.71 — — — — Typ. — 100 2.5 15 0.6 3.6 — — — —
1, 2, 3
Crystal start-up time — 8 MHz high-frequency, low-power mode Crystal start-up time — 8 MHz high-frequency, high-gain mode
1. This parameter is characterized before qualification rather than 100% tested. 2. Proper PC board layout procedures must be followed to achieve specifications. 3. Crystal start up time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register being set.
6.3.3 32kHz Oscillator Electrical Characteristics
This section describes the module electrical characteristics. 6.3.3.1
32kHz Oscillator DC Electrical Specifications
Table 15. 32kHz Oscillator Module DC Electrical Specifications (VSSOSC= 0 VDC) (TA = TL to TH)
Symbol VBAT RF Cpara Cload Vpp Description Supply voltage Internal feedback resistor Parasitical capacitance of EXTAL32 and XTAL32 Internal load capacitance (programmable) Peak-to-peak amplitude of oscillation Max. Unit V MΩ pF pF V
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
27
Peripheral operating requirements and behaviors
6.3.3.2
32kHz Oscillator Frequency Specifications
Table 16. 32kHz oscillator frequency specifications (VDD33OSC = VDD33OSC (min) to VDD33OSC (max), TA = TL to TH)
Symbol fosc_lo tstart Description Oscillator crystal Crystal start-up time Min. — — Typ. 32 1000 Max. — — Unit kHz ms 1, 2 Notes
1. This parameter is characterized before qualification rather than 100% tested. 2. Proper PC board layout procedures must be followed to achieve specifications.
6.4 Memories and memory interfaces
6.4.1 Flash (FTFL) Electrical Characteristics
This section describes the electrical characteristics of the FTFL module. 6.4.1.1 Flash Timing Parameters — Program and Erase
The following characteristics represent the amount of time the internal charge pumps are active and do not include command overhead.
Table 17. NVM program/erase timing characteristics
Min. — — — Typ. 20 20 Max. TBD 100 800
Symbol thvpgm4 thversscr thversblk
Description
Pr el im in ar y
μs ms ms 160
Unit
Notes
Longword Program high-voltage time Sector Erase high-voltage time Erase Block high-voltage time
1 1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2
Symbol trd1blk trd1sec2k tpgmchk
Flash Timing Parameters — Commands
Table 18. Flash command timing characteristics
Description Read 1s Block execution time Read 1s Section execution time (2 KB flash sec‐ tor) Program Check execution time Min. — — — Table continues on the next page... Typ. — — — Max. 1.4 40 35 Unit ms μs μs Notes
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
28
Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 18. Flash command timing characteristics (continued)
Symbol trdrsrc tpgm4 tersblk tersscr tpgmsec2k trd1all trdonce tpgmonce tersall tvfykey Description Read Resource execution time Program Longword execution time Erase Flash Block execution time Erase Flash Sector execution time Program Section execution time (2 KB flash sec‐ tor) Read 1s All Blocks execution time Read Once execution time Min. — — — — — — — — — — Typ. — 50 160 20 TBD — — Max. 35 TBD 800 100 TBD 2.8 35 Unit μs μs ms ms ms ms μs μs 1 2 2 Notes 1
Program Once execution time
Erase All Blocks execution time
Pr el im in ar y
50 TBD 320 — 1600 35 ms μs
2 1
Verify Backdoor Access Key execution time
1. Assumes 25MHz flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life.
6.4.1.3
Flash (FTFL) Current and Power Parameters
Description
Table 19. Flash (FTFL) current and power parameters
Typ. 10
Symbol IDD_PGM
Unit mA
Worst case programming current in program flash
6.4.1.4
Symbol
Reliability Characteristics
Description
Table 20. NVM reliability characteristics
Min. Typ.1 Program Flash 5 10 15 10 K
Max.
Unit
Notes
tnvmretp10k tnvmretp1k tnvmretp100 nnvmcycp
Data retention after up to 10 K cycles Data retention after up to 1 K cycles Data retention after up to 100 cycles Cycling endurance
TBD TBD TBD TBD
— — — —
years years years cycles
2 2 2 3
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to 25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618. 2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application). 3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
29
Peripheral operating requirements and behaviors
6.4.2 EzPort Switching Specifications
Table 21. EzPort switching specifications
Num Description Operating voltage EP1 EP1a EP2 EP3 EP4 EP5 EP6 EP7 EP8 EP9 EZP_CK frequency of operation (all commands except READ) EZP_CK frequency of operation (READ command) EZP_CS negation to next EZP_CS assertion EZP_CS input valid to EZP_CK high (setup) EZP_CK high to EZP_CS input invalid (hold) EZP_D input valid to EZP_CK high (setup) Min. 2.7 — — 2 x tEZP_CK 5 5 2 5 Max. 3.6 fSYS/2 fSYS/8 — — — — — Unit V MHz MHz ns ns ns ns ns ns ns ns
EZP_CK high to EZP_D input invalid (hold)
EZP_CK low to EZP_Q output valid (setup)
EZP_CK low to EZP_Q output invalid (hold) EZP_CS negation to EZP_Q tri-state
EZP_CK
EZP_CS
EZP_Q (output)
EZP_D (input)
6.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
30
Pr el im in ar y
— 0 12 — — 12
EP3 EP4 EP2 EP9 EP7 EP8 EP5 EP6
Figure 9. EzPort Timing Diagram
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6.6 Analog
6.6.1 ADC electrical specifications
The 16-bit accuracy specifications listed in Table 22 and Table 23 are achievable on the differential pins (ADCx_DP0, ADCx_DM0, ADC, ADCx_DP1, ADCx_DM1, ADCx_DP3, and ADCx_DP3). The ADCx_DP2 and ADCx_DM2 ADC inputs are used as the PGA inputs and are not direct device pins. Accuracy specifications for these pins are defined in Table 24 and Table 25. All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy specifications. 6.6.1.1
Symbol VDDA ΔVDDA ΔVSSA VREFH VREFL VADIN CADIN
16-bit ADC operating conditions
Description Conditions Min.
Pr el im in ar y
Table 22. 16-bit ADC operating conditions
Typ.1 — 0 0 Max. 3.6 Absolute 1.71 Unit V Delta to VDD (VDDVDDA) Delta to VSS (VSSVSSA) -100 -100 1.13 +100 +100 VDDA VSSA mV mV V V V VDDA VSSA — 8 4 VSSA VREFL — — VREFH 10 5 • 16 bit modes • 8/10/12 bit modes pF — 2 5 kΩ Table continues on the next page...
Notes
Supply voltage Supply voltage
2 2
Ground voltage ADC reference voltage high
Reference volt‐ age low Input voltage Input capaci‐ tance
RADIN
Input resistance
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
31
Peripheral operating requirements and behaviors
Table 22. 16-bit ADC operating conditions (continued)
Symbol RAS Description Analog source resistance Conditions 16 bit modes • fADCK > 8MHz • fADCK = 4–8MHz • fADCK < 4MHz 13/12 bit modes • fADCK > 16MHz • fADCK > 8MHz • fADCK = 4–8MHz • fADCK < 4MHz — — — — — — — — 0.5 1 2 5 kΩ kΩ kΩ kΩ — — — — — — 0.5 1 2 kΩ kΩ kΩ Min. Typ.1 Max. Unit Notes External to MCU Assumes ADLSMP=0
fADCK
ADC conversion clock frequency
1. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2. DC potential difference.
32
Pr el im in ar y
11/10 bit modes • fADCK > 8MHz — — — — — — — — — — 2 5 kΩ kΩ kΩ kΩ kΩ • fADCK = 4–8MHz • fADCK < 4MHz 10 5 9/8 bit modes • fADCK > 8MHz • fADCK < 8MHz 10 ADLPC=0, ADHSC=1 • 16 bit modes • ≤13 bit modes 1.0 1.0 — — TBD TBD MHz MHz ADLPC=0, ADHSC=0 • 16 bit modes • ≤13 bit modes 1.0 1.0 1.0 1.0 — — — — 8.0 MHz MHz MHz MHz 12.0 5.0 8.0 ADLPC=1, ADHSC=1 • 16 bit modes • ≤13 bit modes ADLPC=1, ADHSC=0 • 16 bit modes • ≤13 bit modes 1.0 1.0 — — 2.5 5.0 MHz MHz
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010. Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
SIMPLIFIED INPUT PIN EQUIVALENT CIRCUIT
Z ADIN
SIMPLIFIED CHANNEL SELECT CIRCUIT
Z AS R AS V ADIN V AS C AS
Pad leakage due to input protection
R ADIN
ADC SAR ENGINE
6.6.1.2
Symbol IDDA
16-bit ADC electrical characteristics
Description Conditions1 Min. — — — — —
Table 23. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Typ.2 215 340 470 610 Max. — — — — Supply current • ADLPC=1, ADHSC=0 • ADLPC=1, ADHSC=1 • ADLPC=0, ADHSC=0 • ADLPC=0, ADHSC=1
Pr el im in ar y
INPUT PIN R ADIN INPUT PIN R ADIN INPUT PIN
R ADIN
C ADIN
Figure 10. ADC input impedance equivalency diagram
Unit μA μA μA μA μA
Notes ADLSMP= 0 ADCO=1
Supply current
• Stop, reset, module off • ADLPC=1, ADHSC=0 • ADLPC=1, ADHSC=1 • ADLPC=0, ADHSC=0 • ADLPC=0, ADHSC=1
0.01 2.4 4.0 5.2 6.2
0.8
fADACK
ADC asynchro‐ nous clock source
TBD TBD TBD TBD
TBD TBD TBD TBD
MHz MHz MHz MHz
tADACK = 1/ fADACK
Sample Time
See Reference Manual chapter for sample times
Conversion Time See Reference Manual chapter for conversion times Table continues on the next page...
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
33
Peripheral operating requirements and behaviors
Table 23. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol TUE Description Total unadjusted error Conditions1 • 16 bit differential • 16 bit single-ended • 13 bit differential • 12 bit single-ended • 11 bit differential • 10 bit single-ended • 9 bit differential • 8 bit single-ended DNL Differential nonlinearity • 16 bit differential • 13 bit differential • 11 bit differential • 9 bit differential Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ.2 ±14.0 ±13.0 ±1.5 ±TBD ±0.8 ±TBD ±0.5 ±0.5 ±2.5 ±2.5 ±0.7 ±0.7 ±0.5 ±0.2 ±0.2 Max. ±TBD ±TBD ±TBD ±TBD ±TBD ±TBD ±1.0 ±1.0 ±TBD ±TBD ±TBD ±TBD ±TBD ±TBD ±0.5 ±0.5 — — LSB3 Max hard‐ ware aver‐ aging (AVGE = %1, AVGS = %11) Unit LSB3 Notes Max hard‐ ware aver‐ aging (AVGE = %1, AVGS = %11)
INL
Integral non-line‐ arity
Pr el im in ar y
• 16 bit single-ended • 12 bit single-ended • 10 bit single-ended • 8 bit single-ended • 16 bit differential • 13 bit differential • 11 bit differential • 9 bit differential ±TBD -6 to +2.5 -2 to +12 ±1.0 ±1.0 ±0.5 ±0.5 ±0.3 ±0.3 ±4.0 ±4.0 ±0.7 ±0.7 ±0.4 ±0.4 ±0.2 ±0.2 • 16 bit single-ended • 12 bit single-ended • 10 bit single-ended • 8 bit single-ended • 16 bit differential • 13 bit differential • 12 bit single-ended • 11 bit differential • 10 bit single-ended • 9 bit differential • 8 bit single-ended ±TBD ±TBD ±TBD ±TBD ±0.5 ±0.5 — — ±TBD ±TBD ±TBD ±TBD ±0.5 ±0.5 • 16 bit single-ended Table continues on the next page...
LSB3
Max aver‐ aging
EZS
Zero-scale error
LSB3
VADIN = VSSA
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
34
Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 23. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol EFS Description Full-scale error Conditions1 • 16 bit differential • 16 bit single-ended • 13 bit differential • 12 bit single-ended • 11 bit differential • 10 bit single-ended • 9 bit differential • 8 bit single-ended EQ Quantization er‐ ror • 16 bit modes Min. — — — — — — — — — — Typ.2 0 to +10 0 to +14 ±1.0 ±TBD ±0.4 ±0.4 ±0.2 ±0.2 -1 to 0 — Max. — — ±TBD ±TBD ±TBD ±TBD ±0.5 ±0.5 — LSB3 Unit LSB3 Notes VADIN = VDDA
ENOB
Effective number 16 bit differential mode of bits • Avg=32 • Avg=16 • Avg=8 • Avg=4 • Avg=1
Pr el im in ar y
• ≤13 bit modes ±0.5 TBD TBD TBD TBD TBD 13.6 14.1 13.2 TBD TBD TBD TBD TBD TBD TBD 16 bit single-ended mode • Avg=32 • Avg=16 • Avg=8 • Avg=4 • Avg=1 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD See ENOB 6.02 × ENOB + 1.76 dB 16 bit differential mode • Avg=32 16 bit single-ended mode • Avg=32 — TBD TBD dB — -94 TBD dB TBD TBD 95 TBD — — dB dB 16 bit single-ended mode • Avg=32 Table continues on the next page...
4
bits bits bits bits bits
bits bits bits bits bits
SINAD THD
Signal-to-noise plus distortion Total harmonic distortion
4
SFDR
Spurious free dy‐ 16 bit differential mode namic range • Avg=32
4
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
35
Peripheral operating requirements and behaviors
Table 23. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol EIL Description Input leakage er‐ ror Conditions1 Min. Typ.2 IIn × RAS Max. Unit mV Notes IIn = leak‐ age cur‐ rent (refer to the MCU's voltage and cur‐ rent oper‐ ating rat‐ ings)
VTEMP25
Temp sensor voltage
1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA 2. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 3. 1 LSB = (VREFH - VREFL)/2N 4. Input data is 1 kHz sine wave.
6.6.1.3
Symbol VDDA VREFPGA VADIN RPGA
16-bit ADC with PGA operating conditions
Description Conditions Min. Typ.1 —
Pr el im in ar y
• 25°C to 105°C — — TBD TBD — — 25°C
Temp sensor slope
• –40°C to 25°C
—
TBD
—
mV/°C mV/°C mV
Table 24. 16-bit ADC with PGA operating conditions
Max. 3.6 Absolute 1.71
Unit V V V
Notes
Supply voltage
PGA ref voltage Input voltage
VREFOUT VREFOUT VREFOUT VSSA TBD TBD TBD TBD TBD TBD — 1.25 — VDDA TBD TBD TBD TBD TBD TBD — —
2, 3
Input impedance
Gain = 1, 2, 4, 8 Gain = 16, 32 Gain = 64
64 32 16
kΩ
RPGAD
Differntial input impedance
Gain = 1, 2, 4, 8 Gain = 16, 32 Gain = 64
128 64 32 100 —
kΩ
IN+ to IN-
RAS TS
Analog source resistance ADC sampling time
Gain = 16, 32 Gain = 64
Ω µs
4 5
1. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 6 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2. ADC must be configured to use the internal voltage reference (VREFOUT) 3. PGA reference connected to the VREFOUT pin. If the user wishes to drive VREFOUT with a voltage other than the output of the VREF module, the VREF module must be disabled.
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
36
Preliminary
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors 4. The analog source resistance (RAS), external to MCU, should be kept as minimum as possible. Increased RAS causes drop in PGA gain without affecting other performances. This is not dependent on ADC clock frequency. 5. The minimum sampling time is dependent on input signal frequency and ADC mode of operation. A minimum of 1.25µs time should be allowed for Fin=4 kHz at 16-bit differential mode. Recommended ADC setting is: ADLSMP=1, ADLSTS=2 at 8 MHz ADC clock. The ADLSTS bits can be adjusted for different ADC clock frequency
6.6.1.4
Symbol IDDA_PGA ILKG G
16-bit ADC with PGA characteristics
Table 25. 16-bit ADC with PGA characteristics
Description Supply current Leakage current Gain2 PGA disabled Conditions Min. TBD — Typ.1 590