MMA20312B

Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE. The amplifier is housed in a low--cost, surface mount QFN plastic package. • Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm Frequency 1880 MHz 1920 MHz 2010 MHz 2025 MHz 2140 MHz Gps (dB) 29.0 29.0 27.4 26.8 27.0 ACPR (dBc) --47.4 --46.7 --52.0 --50.0 --51.7 PAE (%) 9.1 9.0 9.3 9.5 9.4 Test Signal TD--SCDMA TD--SCDMA TD--SCDMA TD--SCDMA W--CDMA MMA20312BT1 1800-2200 MHz, 27.2 dB 30.5 dBm InGaP HBT Features • Active Bias Control (On--chip) • Frequency: 1800--2200 MHz • P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit) • Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit) • OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit) • Single 5 Volt Supply • Low Cost QFN Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical CW Performance (1) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Symbol Gp IRL ORL P1db 1800 MHz 28.8 --17.6 --20.3 30.5 2140 MHz 26.4 --10.9 --14.7 30.5 2200 MHz 25.5 --9.7 --13.7 30.5 Unit dB dB dB dBm CASE 2131-01 QFN 3x3 PLASTIC Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 6 550 14 --65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC1 = VCC2 = VCTRL = 5 Vdc, TA = 25°C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 86°C, VCC1 = VCC2 = VCTRL = 5 Vdc Symbol RθJC Value (3) 52 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. MMA20312BT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC1 = VCC2 = VCTRL = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale W--CDMA Application Circuit) Characteristic Small--Signal Gain (S21) (1) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression, CW Third Order Output Intercept Point, Two--Tone CW Noise Figure Supply Current (1,2) Supply Voltage (2) Symbol Gp IRL ORL P1dB OIP3 NF ICQ VCC Min 23.6 — — — — — 62.5 — Typ 27.2 --10.7 --15.5 28.2 44.5 3.3 70 5 Max — — — — — — 77 — Unit dB dB dB dBm dBm dB mA V Table 5. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Class 0 (Minimum), rated to 150 V A (Minimum) III (Minimum) Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C 1. Specified data is based on performance of soldered down part in W--CDMA application circuit. 2. For reliable operation, the junction temperature should not exceed 150°C. VBA2 VCC1 VCC1 RFout VB1 RFout VBIAS RFin 1 2 3 4 5 6 GND GND GND VBA2 VCC1 VCC1 12 11 10 9 8 7 RFout RFout VCC2 VB1 BIAS CIRCUIT VBIAS RFin VCC2 GND GND GND Figure 1. Functional Block Diagram Figure 2. Pin Connections MMA20312BT1 2 RF Device Data Freescale Semiconductor VCTRL R1 C6 12 R2 C7 11 10 Z5 C8 Z4 C17 C18 C19 VCC1 C5 1 BIAS CIRCUIT 9 RF OUTPUT C4 2 RF INPUT C1 C2 L1 4 5 6 8 Z2 Z3 C3 Z1 3 7 Z6 VCC2 C13 C16 Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Z1 Z2 Z3 0.250″ x 0.030″ Microstrip 0.035″ x 0.030″ Microstrip 0.283″ x 0.030″ Microstrip Z4 Z5 Z6 0.080″ x 0.030″ Microstrip 0.155″ x 0.010″ Microstrip 0.045″ x 0.010″ Microstrip Figure 3. MMA20312BT1 Test Circuit Schematic - TD-SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values - TD-SCDMA Part C1, C5 C2 C3 C4 C6, C7, C13 C8, C18 C16, C19 C17 L1 R1 R2 PCB Description 22 pF Chip Capacitors 1.8 pF Chip Capacitor 2.2 pF Chip Capacitor 5.6 pF Chip Capacitor 10 pF Chip Capacitors 1 μF Chip Capacitors 10 μF Chip Capacitors 0.1 μF Chip Capacitor 1.8 nH Chip Inductor 120 Ω Chip Resistor 1300 Ω Chip Resistor 0.014″, εr = 3.7 Part Number 06033J220GBS 06035J1R8BBS 06035J2R2BBS 06035J5R6BBS 06035J100GBS GRM188R61A105KA61 GRM188R60J106ME47 GRM188R71H104KA93 LL1608--FS1N8S RR0816Q--121--D RR0816Q--132--D FR408 Manufacturer AVX AVX AVX AVX AVX Murata Murata Murata TOKO Susumu Susumu ISOLA MMA20312BT1 RF Device Data Freescale Semiconductor 3 VBIAS VCC1 C8 C19 R1 R2 C7 C6 C17 C18 RFOUT C5 RFIN C1 C2 L1 C3 C13 C4 C16 QFN 3x3--12B Rev. 0 Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Figure 4. MMA20312BT1 Test Circuit Component Layout - TD-SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values - TD-SCDMA Part C1, C5 C2 C3 C4 C6, C7, C13 C8, C18 C16, C19 C17 L1 R1 R2 PCB Description 22 pF Chip Capacitors 1.8 pF Chip Capacitor 2.2 pF Chip Capacitor 5.6 pF Chip Capacitor 10 pF Chip Capacitors 1 μF Chip Capacitors 10 μF Chip Capacitors 0.1 μF Chip Capacitor 1.8 nH Chip Inductor 120 Ω Chip Resistor 1300 Ω Chip Resistor 0.014″, εr = 3.7 Part Number 06033J220GBS 06035J1R8BBS 06035J2R2BBS 06035J5R6BBS 06035J100GBS GRM188R61A105KA61 GRM188R60J106ME47 GRM188R71H104KA93 LL1608--FS1N8S RR0816Q--121--D RR0816Q--132--D FR408 Manufacturer AVX AVX AVX AVX AVX Murata Murata Murata TOKO Susumu Susumu ISOLA VCC2 (Component Designations and Values table repeated for reference.) MMA20312BT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — TD-SCDMA 0 --5 --10 S21 (dB) S11 (dB) --15 --20 --25 --30 --35 1500 VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 2750 85°C 25°C --40°C 35 30 25 20 15 10 5 0 1500 85°C 25°C --40°C VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 2750 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature 0 --5 --10 S22 (dB) --15 --20 --25 --30 --35 1500 25°C --40°C 85°C Figure 6. S21 versus Frequency versus Temperature VCC1 = VCC2 = VCTRL = 5 Vdc 1750 2000 2250 2500 2750 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMA20312BT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — TD-SCDMA --10 --15 --20 --25 ACPR (dBc) --30 --35 --40 --45 --50 ACPR --55 --60 7 9 11 13 15 17 --40°C ICC 25°C 85°C --40°C 85°C 25°C 19 21 Pout, OUTPUT POWER (dBm) 200 ICC, COLLECTOR CURRENT (mA) PAE, POWER ADDED EFFICIENCY (%) VCC1 = VCC2 = VCTRL = 5 Vdc f = 2017.5 MHz 180 160 140 120 100 80 60 40 20 0 23 Figure 8. ACPR versus Collector Current versus Output Power versus Temperature 30 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 21 20 7 9 11 13 15 17 25°C 85°C VCC1 = VCC2 = VCTRL = 5 Vdc f = 2017.5 MHz PAE --40°C 85°C 25°C 19 21 Gain --40°C 50 45 40 35 30 25 20 15 10 5 0 23 Pout, OUTPUT POWER (dBm) Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature 31 30 29 28 27 26 25 24 1800 1850 1900 1950 2000 2050 f, FREQUENCY (MHz) 25°C 85°C VCC1 = VCC2 = VCTRL = 5 Vdc P1dB, 1 dB COMPRESSION POINT, CW (dBm) --40°C Figure 10. P1dB versus Frequency versus Temperature, CW MMA20312BT1 6 RF Device Data Freescale Semiconductor VCTRL R1 C6 12 R2 C7 11 10 Z5 C8 Z4 C9 C17 C18 C19 VCC1 C5 1 BIAS CIRCUIT 9 RF OUTPUT C4 2 RF INPUT C1 C2 L1 4 5 6 8 Z2 Z3 C3 Z1 3 7 Z6 VCC2 C13 C16 Note: Component numbers C10, C11, C12, C14, and C15 are not used. Z1 Z2 Z3 0.218″ x 0.030″ Microstrip 0.068″ x 0.030″ Microstrip + 0.250″ x 0.030″ Microstrip Z4 Z5 Z6 0.080″ x 0.030″ Microstrip 0.155″ x 0.010″ Microstrip 0.045″ x 0.010″ Microstrip Figure 11. MMA20312BT1 Test Circuit Schematic - W- -CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values - W- -CDMA Part C1, C5, C9 C2, C3 C4 C6, C7, C13 C8, C18 C16, C19 C17 L1 R1 R2 PCB Description 22 pF Chip Capacitors 1.8 pF Chip Capacitors 5.6 pF Chip Capacitor 10 pF Chip Capacitors 1 μF Chip Capacitors 10 μF Chip Capacitors 0.1 μF Chip Capacitor 1.8 nH Chip Inductor 120 Ω Chip Resistor 1500 Ω Chip Resistor 0.014″, εr = 3.7 Part Number 06033J220GBS 06035J1R8BBS 06035J5R6BBS 06035J100GBS GRM188R61A105KA61 GRM188R60J106ME47 GRM188R71H104KA93 LL1608--FS1N8S RR0816Q--121--D RR0816Q--152−D FR408 Manufacturer AVX AVX AVX AVX Murata Murata Murata TOKO Susumu Susumu ISOLA MMA20312BT1 RF Device Data Freescale Semiconductor 7 VBIAS VCC1 C8 C19 R1 R2 C7 C9 C17 C18 RFOUT RFIN C6 C5 C1 C2 L1 C3 C13 C4 C16 QFN 3x3--12B Rev. 0 Note: Component numbers C10, C11, C12, C14, and C15 are not used. Figure 12. MMA20312BT1 Test Circuit Component Layout - W- -CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values - W- -CDMA Part C1, C5, C9 C2, C3 C4 C6, C7, C13 C8, C18 C16, C19 C17 L1 R1 R2 PCB Description 22 pF Chip Capacitors 1.8 pF Chip Capacitors 5.6 pF Chip Capacitor 10 pF Chip Capacitors 1 μF Chip Capacitors 10 μF Chip Capacitors 0.1 μF Chip Capacitor 1.8 nH Chip Inductor 120 Ω Chip Resistor 1500 Ω Chip Resistor 0.014″, εr = 3.7 Part Number 06033J220GBS 06035J1R8BBS 06035J5R6BBS 06035J100GBS GRM188R61A105KA61 GRM188R60J106ME47 GRM188R71H104KA93 LL1608--FS1N8S RR0816Q--121--D RR0816Q--152−D FR408 Manufacturer AVX AVX AVX AVX Murata Murata Murata TOKO Susumu Susumu ISOLA VCC2 (Component Designations and Values table repeated for reference.) MMA20312BT1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — W-CDMA --10 --15 --20 --25 ACPR (dBc) --30 --35 --40 --45 --50 --55 --60 8 10 12 14 16 18 20 22 ACPR ICC 200 ICC, COLLECTOR CURRENT (mA) PAE, POWER ADDED EFFICIENCY (%) VCC1 = VCC2 = VCTRL = 5 Vdc f = 2140 MHz 180 160 140 120 100 80 60 40 20 0 24 Pout, OUTPUT POWER (dBm) Figure 13. ACPR versus Collector Current versus Output Power 30 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 21 20 8 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) PAE VCC1 = VCC2 = VCTRL = 5 Vdc f = 2140 MHz Gain 50 45 40 35 30 25 20 15 10 5 0 24 Figure 14. Power Gain versus Power Added Efficiency versus Output Power 31 30 29 28 27 26 25 24 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) VCC1 = VCC2 = VCTRL = 5 Vdc P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 15. P1dB versus Frequency, CW MMA20312BT1 RF Device Data Freescale Semiconductor 9 3.00 0.70 0.30 2.00 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure 3.40 Figure 16. PCB Pad Layout for QFN 3x3 MA01 YWZ Figure 17. Product Marking MMA20312BT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMA20312BT1 RF Device Data Freescale Semiconductor 11 MMA20312BT1 12 RF Device Data Freescale Semiconductor MMA20312BT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Oct. 2010 Mar. 2011 • Initial Release of Data Sheet • Added “OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)” to Features list, p. 1 • Typical CW Performance table: removed OIP3, p. 1 • Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package type. Changed from MMA20312B to QFN 3x3--12B, p. 4, 8 1.1 Mar. 2011 • Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value, p. 1 Description MMA20312BT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MMA20312BT1 Document Number: RF Device Data MMA20312B Rev. 1.1, 3/2011 Freescale Semiconductor 15