MMG3004NT1

Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 3, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. Features • Frequency: 400 - 2200 MHz • P1dB: 27 dBm @ 2140 MHz • Small - Signal Gain: 16 dB @ 2140 MHz • Third Order Output Intercept Point: 44 dBm @ 2140 MHz • Single 5 Volt Supply • Internally Prematched to 50 Ohms • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. MMG3004NT1 400 - 2200 MHz, 16 dB 27 dBm InGaP HBT CASE 1543 - 03 PQFN 5x5 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 19.5 - 7.5 - 10 27 44 1960 MHz 16.5 -8 - 12 27 44 2140 MHz 16 -8 - 12 27 44 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDC IDC Pin Tstg TJ Value 6 400 18 - 65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (3) 33 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3004NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF IDC VDC Min 15 — — — — — 225 — Typ 16 -8 - 12 27 44 3.4 250 5 Max — — — — — — 275 — Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3004NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name RFin RFout/ VCC VCC VBA GND Pin Number 2, 3, 4 10, 11, 12 14 16 Backside Center Metal Description VBA RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. Collector voltage supply. Bias voltage supply. The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. RFin RFin RFin 1 2 3 4 5 6 7 8 16 15 VCC 14 13 12 11 10 9 RFout/VCC RFout/VCC RFout/VCC (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C MMG3004NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 300 ICC, COLLECTOR CURRENT (mA) 250 200 150 100 50 VCC = 5 Vdc 0 0 1 2 3 4 5 VBA, BIAS VOLTAGE (V) 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 250 mA MTTF (YEARS) 105 106 104 Figure 2. Collector Current versus Bias Voltage Figure 3. MTTF versus Junction Temperature MMG3004NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R2 R1 C3 C4 1 16 15 14 13 12 Z6 3 4 5 6 DUT 7 8 Z6 Z7 Z8 Z9 PCB 11 10 9 Z7 L1 C5 C6 RF INPUT 2 Z1 C1 C7 C8 Z2 Z3 Z4 L2 Z5 Current Mirror Z8 L3 Z9 Z10 C2 Z11 RF OUTPUT C9 C10 Z1, Z11 Z2, Z10 Z3 Z4 Z5 0.140″ 0.060″ 0.192″ 0.055″ 0.084″ x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip 0.089″ x 0.028″ Microstrip 0.051″ x 0.028″ Microstrip 0.055″ x 0.028″ Microstrip 0.112″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C5 C4, C6 C7, C8 C9, C10 L1 L2, L3 R1 R2 Description 15 pF Chip Capacitors 0.01 μF Chip Capacitors 0.1 μF Chip Capacitors 2.2 pF Chip Capacitors 1.8 pF Chip Capacitors 33 nH Chip Inductor 3.9 nH Chip Inductors 22 Ω, 1/10 W Chip Resistor 0 Ω, 1/10 W Chip Resistor Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC 06035J2R2BS 06035J1R8BS LL1608- FSL33NJ LL1608- FSL3N9S CRCW060322R0FKEA CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet AVX AVX Toko Toko Vishay Vishay MMG3004NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY R2 R1 C3 C4 RFin L2 L1 C5 C6 RFout C1 C7 C8 L3 C9 C10 C2 MMG3004/5 Rev. 3 Figure 5. 50 Ohm Test Circuit Component Layout MMG3004NT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 21 Gp, SMALL−SIGNAL GAIN (dB) 0 IRL, INPUT RETURN LOSS (dB) 20 TC = 25°C 19 −40°C −2 −4 85°C −6 TC = 85°C −8 VDC = 5 Vdc −40°C 25°C 18 VDC = 5 Vdc 17 840 870 900 f, FREQUENCY (MHz) 930 960 −10 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 6. Small - Signal Gain (S21) versus Frequency Figure 7. Input Return Loss (S11) versus Frequency −5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29 −7 TC = −40°C −9 25°C −11 85°C 28 TC = 25°C 85°C −40°C 27 26 VDC = 5 Vdc 25 840 870 900 f, FREQUENCY (MHz) 930 960 −13 VDC = 5 Vdc −15 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 8. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 47 10 Figure 9. P1dB versus Frequency 45 NF, NOISE FIGURE (dB) TC = 25°C 43 −40°C 85°C 8 6 TC = 85°C −40°C 25°C 41 4 39 VDC = 5 Vdc 1 MHz Tone Spacing 37 840 870 900 f, FREQUENCY (MHz) 930 960 2 VDC = 5 Vdc 0 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency MMG3004NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS: 900 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −30 VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −40 −35 VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −50 −40 −45 −60 TC = 85°C 25°C −40°C −50 −70 TC = 85°C 25°C −40°C 21 23 25 27 29 −55 19 −80 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power MMG3004NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz VSUPPLY R2 R1 C3 C4 1 16 15 14 13 12 Z5 3 11 DUT 6 7 8 Z5 Z6 Z7 PCB Z6 Z7 L1 C5 C6 RF INPUT 2 Z1 C1 C7 C8 4 5 Z1, Z9 Z2, Z8 Z3 Z4 0.140″ 0.060″ 0.259″ 0.080″ x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip Z2 Z3 Z4 Current Mirror Z8 C2 Z9 RF OUTPUT 10 9 C9 C10 0.049″ x 0.028″ Microstrip 0.036″ x 0.028″ Microstrip 0.254″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C5 C4, C6 C7, C10 C8 C9 L1 R1 R2 Description 15 pF Chip Capacitors 0.01 μF Chip Capacitors 0.1 μF Chip Capacitors 0.5 pF Chip Capacitors 2.7 pF Chip Capacitor 0.8 pF Chip Capacitor 33 nH Chip Inductor 22 Ω, 1/10 W Chip Resistor 0 Ω, 1/10 W Chip Resistor Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC 06035J0R5BS 06035J2R7BS 06035J0R8BS LL1608- FSL33NJ CRCW060322R0FKEA CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet AVX AVX AVX Toko Vishay Vishay MMG3004NT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz VBA VSUPPLY R2 R1 C3 C4 RFin L1 C5 C6 RFout C1 C7 C8 C9 C10 C2 MMG3004/5 Rev. 3 Figure 15. 50 Ohm Test Circuit Component Layout MMG3004NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz 18 Gp, SMALL−SIGNAL GAIN (dB) 17 16 15 14 13 VDC = 5 Vdc 12 1900 1960 2020 2080 2140 2200 −10 1900 −5 IRL, INPUT RETURN LOSS (dB) TC = 25°C 85°C −6 −40°C −7 −8 TC = 85°C −40°C VDC = 5 Vdc 1960 25°C −9 f, FREQUENCY (MHz) 2020 2080 f, FREQUENCY (MHz) 2140 2200 Figure 16. Small - Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency −5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29 −7 28 TC = −40°C 27 25°C 26 VDC = 5 Vdc 25 1900 1960 2020 2080 2140 2200 85°C −9 −11 TC = −40°C −13 VDC = 5 Vdc −15 1900 1960 2020 85°C 25°C 2080 2140 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 47 10 Figure 19. P1dB versus Frequency 45 TC = 25°C 43 −40°C 41 85°C VDC = 5 Vdc 1 MHz Tone Spacing 37 1900 1960 2020 2080 2140 2200 NF, NOISE FIGURE (dB) 8 6 TC = 85°C −40°C VDC = 5 Vdc 0 1900 1960 2020 2080 4 39 2 25°C 2140 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency MMG3004NT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −30 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −40 −35 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −50 −40 −45 TC = 85°C −50 −55 19 −40°C 25°C 21 23 25 27 29 −60 TC = 85°C 25°C −40°C −70 −80 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −20 −30 −40 85°C −50 TC = −40°C 25°C VDC = 5 Vdc, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 16 18 20 22 24 26 −60 −70 Pout, OUTPUT POWER (dBm) Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3004NT1 12 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) f MHz 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 1025 1050 1075 1100 1125 1150 1175 1200 1225 1250 1275 1300 1325 1350 1375 1400 1425 1450 1475 S11 |S11| 0.62780 0.64110 0.65775 0.67009 0.68313 0.69585 0.70558 0.71811 0.72694 0.73704 0.74634 0.75277 0.76214 0.76874 0.77561 0.78327 0.78772 0.79476 0.79893 0.80421 0.80983 0.81256 0.81780 0.82118 0.82354 0.82863 0.82994 0.83369 0.83728 0.83914 0.84333 0.84582 0.84730 0.85017 0.85104 0.85363 0.85515 0.85660 0.85919 0.85982 0.86102 0.86270 0.86382 0.86525 ∠φ - 155.59 - 156.56 - 157.61 - 158.60 - 159.63 - 160.59 - 161.46 - 162.43 - 163.35 - 164.30 - 165.20 - 166.03 - 166.98 - 167.82 - 168.72 - 169.54 - 170.26 - 171.12 - 171.88 - 172.62 - 173.40 - 174.09 - 174.81 - 175.53 - 176.19 - 176.93 - 177.51 - 178.12 - 178.76 - 179.35 - 179.99 179.42 178.80 178.20 177.63 177.01 176.48 175.94 175.39 174.86 174.26 173.77 173.26 172.73 |S21| 7.75028 7.52200 7.40177 7.20037 7.05567 6.91538 6.69940 6.60437 6.42427 6.29327 6.17990 5.99028 5.91391 5.76815 5.64770 5.56291 5.40401 5.33575 5.21557 5.09417 5.04484 4.90083 4.83208 4.75850 4.64462 4.59813 4.47959 4.41800 4.36819 4.25589 4.21812 4.14782 4.07433 4.03089 3.94928 3.91182 3.84948 3.79124 3.75583 3.68725 3.65116 3.60736 3.55564 3.51922 S21 ∠φ 138.19 135.93 133.81 131.68 129.69 127.76 125.72 123.98 122.18 120.47 118.78 117.13 115.54 114.00 112.56 111.09 109.64 108.25 106.88 105.61 104.35 102.95 101.78 100.63 99.41 98.27 97.05 96.02 95.02 93.92 92.91 91.86 90.84 89.88 88.92 87.97 86.97 86.09 85.18 84.24 83.37 82.44 81.56 80.69 |S12| 0.01341 0.01318 0.01297 0.01282 0.01265 0.01255 0.01251 0.01243 0.01240 0.01238 0.01241 0.01246 0.01249 0.01254 0.01262 0.01272 0.01285 0.01299 0.01314 0.01326 0.01340 0.01357 0.01377 0.01398 0.01421 0.01449 0.01482 0.01512 0.01522 0.01522 0.01532 0.01540 0.01549 0.01563 0.01581 0.01603 0.01623 0.01644 0.01665 0.01685 0.01708 0.01733 0.01754 0.01778 S12 ∠φ - 20.61 - 18.49 - 16.33 - 14.50 - 12.50 - 10.52 - 8.66 - 6.84 - 5.19 - 3.35 - 1.68 - 0.10 1.32 2.86 4.27 5.73 7.01 8.22 9.31 10.44 11.44 12.52 13.37 14.40 15.20 15.97 16.45 16.27 16.04 16.13 16.71 17.23 17.85 18.56 19.15 19.78 20.21 20.62 21.10 21.41 21.83 22.12 22.31 22.70 |S22| 0.73308 0.73263 0.73058 0.72961 0.72804 0.72718 0.72650 0.72500 0.72458 0.72338 0.72241 0.72250 0.72135 0.72103 0.72003 0.71950 0.71888 0.71803 0.71838 0.71707 0.71668 0.71611 0.71547 0.71514 0.71375 0.71292 0.71160 0.71100 0.71111 0.71104 0.71144 0.71102 0.71091 0.71058 0.70945 0.70911 0.70802 0.70758 0.70645 0.70534 0.70492 0.70407 0.70310 0.70185 S22 ∠φ 177.59 177.05 176.51 176.03 175.54 175.02 174.46 173.90 173.43 172.92 172.43 171.98 171.44 170.97 170.51 170.03 169.54 169.01 168.59 168.13 167.64 167.14 166.62 166.17 165.68 165.18 164.72 164.34 163.96 163.46 162.96 162.41 161.96 161.46 160.92 160.44 159.92 159.44 158.93 158.44 157.95 157.43 156.95 156.45 (continued) MMG3004NT1 RF Device Data Freescale Semiconductor 13 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 1500 1525 1550 1575 1600 1625 1650 1675 1700 1725 1750 1775 1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050 2075 2100 2125 2150 2175 2200 2225 2250 2275 2300 2325 2350 2375 2400 2425 2450 2475 2500 2525 2550 2575 S11 |S11| 0.86447 0.86543 0.86646 0.86663 0.86864 0.86848 0.86907 0.86995 0.86908 0.87075 0.87075 0.87095 0.87210 0.87206 0.87291 0.87225 0.87269 0.87341 0.87288 0.87403 0.87359 0.87242 0.87347 0.87337 0.87327 0.87318 0.87233 0.87291 0.87284 0.87305 0.87252 0.87193 0.87178 0.87159 0.87191 0.87202 0.87117 0.87077 0.87026 0.87003 0.86985 0.86940 0.86918 0.86921 ∠φ 171.75 171.19 170.67 170.18 169.65 169.14 168.58 168.06 167.55 166.99 166.48 165.94 165.38 164.86 164.26 163.73 163.18 162.62 162.11 161.54 160.98 160.38 159.78 159.25 158.66 158.11 157.55 156.95 156.41 155.87 155.28 154.76 154.15 153.64 153.13 152.60 152.09 151.53 151.02 150.54 150.02 149.49 148.98 148.48 |S21| 3.49706 3.46774 3.42587 3.38624 3.35249 3.31471 3.28145 3.24680 3.21301 3.17917 3.14872 3.11816 3.08624 3.05732 3.02693 2.99956 2.97218 2.94317 2.91922 2.88985 2.86616 2.84227 2.81763 2.79570 2.77239 2.75232 2.73039 2.70958 2.69236 2.67297 2.65614 2.63741 2.62034 2.60593 2.59024 2.57507 2.55841 2.54515 2.53215 2.51806 2.50328 2.49003 2.47736 2.46415 S21 ∠φ 79.68 78.76 77.92 77.08 76.23 75.38 74.52 73.68 72.89 72.07 71.28 70.46 69.66 68.88 68.07 67.29 66.53 65.76 65.01 64.24 63.49 62.70 61.98 61.26 60.53 59.81 59.07 58.40 57.69 57.01 56.29 55.58 54.89 54.19 53.50 52.78 52.08 51.37 50.65 49.95 49.24 48.49 47.77 47.02 |S12| 0.01815 0.01841 0.01868 0.01889 0.01916 0.01940 0.01966 0.01990 0.02016 0.02043 0.02072 0.02101 0.02127 0.02156 0.02183 0.02214 0.02241 0.02272 0.02300 0.02333 0.02366 0.02397 0.02429 0.02465 0.02498 0.02536 0.02571 0.02602 0.02636 0.02672 0.02709 0.02744 0.02777 0.02812 0.02850 0.02891 0.02926 0.02967 0.03007 0.03047 0.03087 0.03126 0.03167 0.03208 S12 ∠φ 22.78 22.92 23.04 23.19 23.38 23.47 23.55 23.70 23.85 23.94 23.94 24.02 24.02 24.07 24.07 24.03 24.07 24.05 24.10 23.99 23.91 23.80 23.70 23.66 23.49 23.32 23.11 22.93 22.73 22.55 22.23 22.01 21.74 21.52 21.34 21.08 20.77 20.45 20.15 19.77 19.40 18.98 18.61 18.11 |S22| 0.69775 0.69678 0.69558 0.69453 0.69264 0.69185 0.69110 0.68960 0.68912 0.68700 0.68638 0.68533 0.68377 0.68284 0.68136 0.68073 0.67941 0.67817 0.67684 0.67500 0.67393 0.67298 0.67159 0.67018 0.66901 0.66790 0.66702 0.66610 0.66519 0.66417 0.66378 0.66344 0.66387 0.66363 0.66365 0.66346 0.66342 0.66386 0.66405 0.66432 0.66490 0.66538 0.66582 0.66531 S22 ∠φ 156.18 155.64 155.13 154.61 154.06 153.54 153.02 152.47 152.02 151.51 151.05 150.57 150.09 149.66 149.22 148.79 148.37 147.93 147.54 147.15 146.75 146.42 146.04 145.69 145.36 145.01 144.69 144.37 144.03 143.67 143.30 142.95 142.57 142.19 141.75 141.32 140.87 140.39 139.92 139.41 138.85 138.34 137.78 137.21 (continued) MMG3004NT1 14 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 2600 2625 2650 2675 2700 2725 2750 2775 2800 2825 2850 2875 2900 2925 2950 2975 3000 S11 |S11| 0.86804 0.86808 0.86755 0.86741 0.86769 0.86693 0.86730 0.86724 0.86702 0.86694 0.86602 0.86701 0.86649 0.86653 0.86661 0.86565 0.86627 ∠φ 147.97 147.46 146.99 146.47 145.97 145.47 144.92 144.42 143.87 143.37 142.83 142.28 141.70 141.16 140.59 140.01 139.42 |S21| 2.45098 2.43657 2.42271 2.41111 2.39656 2.38409 2.37136 2.35811 2.34590 2.33197 2.32062 2.30727 2.29559 2.28517 2.27190 2.26115 2.24868 S21 ∠φ 46.28 45.54 44.82 44.06 43.31 42.57 41.82 41.07 40.30 39.55 38.80 38.05 37.30 36.51 35.74 34.97 34.20 |S12| 0.03246 0.03287 0.03328 0.03360 0.03402 0.03438 0.03473 0.03504 0.03530 0.03566 0.03594 0.03623 0.03650 0.03678 0.03700 0.03725 0.03747 S12 ∠φ 17.66 17.21 16.67 16.15 15.56 15.04 14.40 13.77 13.25 12.69 12.05 11.45 10.82 10.22 9.61 9.07 8.51 |S22| 0.66588 0.66553 0.66525 0.66520 0.66461 0.66448 0.66407 0.66312 0.66208 0.66088 0.66087 0.65952 0.65833 0.65713 0.65548 0.65458 0.65272 S22 ∠φ 136.62 136.01 135.46 134.87 134.26 133.68 133.13 132.57 132.00 131.39 130.80 130.25 129.72 129.15 128.55 127.97 127.41 MMG3004NT1 RF Device Data Freescale Semiconductor 15 2.2 x 2.2 1.35 0.6 2.6 0.8 5.3 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 25. Recommended Mounting Configuration MMG3004NT1 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3004NT1 RF Device Data Freescale Semiconductor 17 MMG3004NT1 18 RF Device Data Freescale Semiconductor MMG3004NT1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 2 Date Mar. 2007 Description • Replaced Case Outline 1543 - 02 with updated 1543 - 03, Issue C, p. 1, 16 - 18 • Added VCC callout to Pin Connections 10, 11, and 12 in Fig. 1, Pin Connections, p. 3 • Updated Part Numbers in Table 8, Component Designations and Values, 900 MHz, to RoHS compliant part numbers, p. 5 • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 5, 50 Ohm Test Circuit Component Layout, 900 MHz, p. 6 • Removed IDC value due to its variability over temperature, Figs. 12 - 13, IS - 95 Adjacent Channel Power Ratio versus Output Power, 900 MHz, p. 8 • Updated Part Numbers in Table 9, Component Designations and Values, 1900 - 2200 MHz, to RoHS compliant part numbers, p. 9 • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 15, 50 Ohm Test Circuit Component Layout, 1900 - 2200 MHz, p. 10 • Removed IDC value due to its variability over temperature, Figs. 22 - 23, IS - 95 Adjacent Channel Power Ratio versus Output Power, 1900 - 2200 MHz, and Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power, 1900 - 2200 MHz, p. 12 • Replaced Table 10, S - Parameters, p. 13 - 15 • Added Product Documentation and Revision History, p. 19 3 Mar. 2008 • Corrected Tape and Reel information from 12 mm, 7 inch Reel to 16 mm, 13 inch Reel, p. 1 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 12 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 13, 14, 15 MMG3004NT1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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