MMG3008NT1

Freescale Semiconductor Technical Data Document Number: MMG3008NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3008NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small - signal RF. Features • Frequency: 0 to 6000 MHz • P1dB: 15 dBm @ 900 MHz • Small - Signal Gain: 18.5 dB @ 900 MHz • Third Order Output Intercept Point: 26 dBm @ 900 MHz • Single 5 Volt Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3008NT1 0 - 6000 MHz, 18.5 dB 15 dBm InGaP HBT 12 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 18.5 - 18 - 20 15 26 2140 MHz 16 - 22 - 18 14 25.5 3500 MHz 13 - 20 - 16 14 25 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 6 80 10 - 65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 38 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (3) 84 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3008NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 17 — — — — — 32 — Typ 18.5 - 18 - 20 15 26 4 38 5 Max — — — — — — 48 — Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3008NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C MMG3008NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 25 Gp, SMALL−SIGNAL GAIN (dB) 0 TC = 85°C 20 - 40°C 15 25°C S11, S22 (dB) −10 S22 −20 −30 VCC = 5 Vdc 10 0 1 2 f, FREQUENCY (GHz) 3 4 −40 0 S11 VCC = 5 Vdc ICC = 38 mA 1 2 f, FREQUENCY (GHz) 3 4 Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 23 P1dB, 1 dB COMPRESSION POINT (dBm) 21 19 17 15 2600 MHz 13 3500 MHz 11 9 7 8 9 10 11 12 VCC = 5 Vdc ICC = 38 mA 13 14 15 900 MHz 1960 MHz 2140 MHz 17 16 15 14 13 12 11 10 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 38 mA Gp, SMALL−SIGNAL GAIN (dB) Pout, OUTPUT POWER (dBm) Figure 4. Small - Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 80 ICC, COLLECTOR CURRENT (mA) 70 60 50 40 30 20 10 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V) 30 Figure 5. P1dB versus Frequency 27 24 21 VCC = 5 Vdc ICC = 38 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4 18 15 Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMG3008NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 33 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 29 28 27 26 25 24 23 22 −40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing −20 0 20 40 60 80 100 30 27 24 21 f = 900 MHz 1 MHz Tone Spacing 18 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V) T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Collector Voltage Figure 9. Third Order Output Intercept Point versus Case Temperature −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 105 −40 MTTF (YEARS) VCC = 5 Vdc ICC = 38 mA f = 900 MHz 1 MHz Tone Spacing 103 −3 0 3 6 9 12 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 38 mA −50 104 −60 −70 −80 −6 Figure 10. Third Order Intermodulation versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 11. MTTF versus Junction Temperature 8 −20 VCC = 5 Vdc, ICC = 38 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) NF, NOISE FIGURE (dB) 6 −30 −40 4 −50 2 VCC = 5 Vdc ICC = 38 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4 −60 −70 −3 0 3 6 9 12 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3008NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 300 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 20 S21, S11, S22 (dB) 10 0 −10 −20 −30 −40 0 100 200 300 400 500 f, FREQUENCY (MHz) VCC = 5 Vdc ICC = 38 mA S11 MMG30XX Rev 2 S22 C1 C4 C3 L1 C2 S21 R1 Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2, C3 C4 L1 R1 Description 0.01 μF Chip Capacitors 1000 pF Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Taiyo Yuden Panasonic MMG3008NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 20 S21, S11, S22 (dB) 10 0 C1 −10 −20 −30 300 S11 S22 800 1300 1800 2300 2800 3300 3800 MMG30XX Rev 2 L1 C2 S21 VCC = 5 Vdc ICC = 38 mA R1 C4 C3 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.01 μF Chip Capacitor 1000 pF Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number C0603C151J5RAC C0603C103J5RAC C0603C102J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3008NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 38 mA, TC = 25°C, 50 Ohm System) f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 S11 |S11| 0.03723 0.03824 0.03924 0.03984 0.04044 0.04154 0.04218 0.04330 0.04391 0.04504 0.04579 0.04639 0.04725 0.04874 0.05044 0.05265 0.05446 0.05671 0.05987 0.06338 0.06818 0.07156 0.07622 0.08148 0.08625 0.08847 0.09042 0.09247 0.09461 0.09681 0.09928 0.10270 0.10530 0.10836 0.11174 0.11560 0.11980 0.12349 0.12873 0.13268 0.13725 0.14017 0.14638 0.15016 ∠φ - 157.139 - 159.784 - 161.141 - 163.743 - 165.433 - 167.556 - 169.996 - 171.505 - 173.121 - 175.107 - 177.279 - 179.085 178.481 176.513 174.578 172.441 170.794 168.866 166.015 164.827 162.719 160.419 158.869 156.417 154.855 152.545 150.239 148.043 146.969 144.023 141.737 139.246 137.14 134.919 132.496 130.26 128.189 126.377 124.287 121.985 120.2 118.487 116.403 114.638 |S21| 9.53422 9.45692 9.38250 9.30193 9.23472 9.16107 9.08796 9.01503 8.93887 8.86645 8.79137 8.72227 8.65074 8.57600 8.49615 8.41904 8.33301 8.24325 8.16300 8.06445 7.97785 7.88628 7.79192 7.70036 7.61312 7.52137 7.43401 7.33853 7.25672 7.16705 7.08702 6.98699 6.90998 6.82646 6.74375 6.65836 6.57651 6.49376 6.41028 6.33373 6.25726 6.18534 6.10210 6.02971 S21 ∠φ 174.957 172.557 169.351 166.775 164.195 161.651 159.059 156.523 153.864 151.441 148.941 146.469 144.076 141.652 139.244 136.846 134.487 132.225 129.928 127.713 125.419 123.146 120.927 118.767 116.644 114.548 112.485 110.413 108.381 106.399 104.396 102.42 100.459 98.556 96.678 94.774 92.937 91.045 89.21 87.389 85.623 83.864 82.117 80.32 |S12| 0.07125 0.07151 0.07173 0.07196 0.07227 0.07249 0.07267 0.07303 0.07333 0.07360 0.07384 0.07422 0.07453 0.07485 0.07535 0.07573 0.07615 0.07660 0.07706 0.07745 0.07782 0.07832 0.07888 0.07940 0.07998 0.08040 0.08082 0.08128 0.08193 0.08243 0.08305 0.08347 0.08398 0.08445 0.08491 0.08539 0.08590 0.08640 0.08693 0.08742 0.08786 0.08852 0.08869 0.08941 S12 ∠φ - 0.244 - 0.321 - 0.527 - 0.705 - 0.968 - 1.121 - 1.321 - 1.54 - 1.729 - 1.953 - 2.108 - 2.436 - 2.667 - 2.877 - 3.216 - 3.535 - 3.858 - 4.215 - 4.628 - 5.024 - 5.308 - 5.91 - 6.277 - 6.79 - 7.245 - 7.843 - 8.299 - 8.836 - 9.303 - 9.992 - 10.464 - 11.112 - 11.668 - 12.336 - 12.894 - 13.604 - 14.2 - 14.843 - 15.588 - 16.17 - 16.886 - 17.695 - 18.285 - 19.001 |S22| 0.15383 0.15195 0.15038 0.14855 0.14665 0.14473 0.14297 0.14282 0.14257 0.14246 0.14236 0.14207 0.14191 0.14153 0.13860 0.13706 0.13387 0.13169 0.12795 0.12512 0.12243 0.11969 0.11711 0.11465 0.11217 0.10841 0.10615 0.10380 0.10158 0.10048 0.09950 0.09874 0.09873 0.09872 0.09935 0.09998 0.10150 0.10335 0.10540 0.10798 0.11081 0.11466 0.11714 0.12062 S22 ∠φ - 9.473 - 11.4 - 15.453 - 20.132 - 25.238 - 29.059 - 33.099 - 37.115 - 40.95 - 45.011 - 48.838 - 52.786 - 56.644 - 60.456 - 64.47 - 68.268 - 72.153 - 76.394 - 80.615 - 84.753 - 89.314 - 94.022 - 98.985 - 104.195 - 109.672 - 114.968 - 120.795 - 126.657 - 128.442 - 133.06 - 138.358 - 142.307 - 147.8 - 152.853 - 157.527 - 162.646 - 167.628 - 172.451 - 176.909 178.048 174.074 169.543 166.109 161.975 (continued) MMG3008NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 38 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 S11 |S11| 0.15521 0.15976 0.16414 0.16931 0.17290 0.17697 0.18119 0.18491 0.18871 0.19276 0.19700 0.20042 0.20441 0.20776 0.21089 0.21615 0.21938 0.22294 0.22712 0.23123 0.23510 0.23920 0.24357 0.24799 0.25252 0.25708 0.26176 ∠φ 112.618 110.76 109.067 107.269 105.625 103.866 102.097 100.467 98.781 97.217 95.483 93.791 92.231 90.583 89.007 87.21 85.618 84.139 82.548 80.985 79.448 77.951 76.439 75.054 73.636 72.232 70.859 |S21| 5.95603 5.88332 5.81205 5.74220 5.67374 5.60911 5.54039 5.48069 5.41580 5.35397 5.29285 5.23322 5.17959 5.11646 5.06803 5.01467 4.95573 4.90100 4.85380 4.80281 4.75341 4.70392 4.65357 4.60593 4.55940 4.51351 4.46687 S21 ∠φ 78.605 76.922 75.215 73.556 71.895 70.217 68.601 66.985 65.359 63.725 62.113 60.504 58.977 57.358 55.76 54.217 52.66 51.117 49.552 47.99 46.438 44.903 43.375 41.828 40.312 38.767 37.242 |S12| 0.08986 0.09022 0.09063 0.09110 0.09160 0.09197 0.09243 0.09288 0.09335 0.09367 0.09412 0.09452 0.09485 0.09546 0.09593 0.09605 0.09660 0.09698 0.09728 0.09759 0.09808 0.09840 0.09872 0.09894 0.09929 0.09959 0.09973 S12 ∠φ - 19.642 - 20.411 - 21.132 - 21.914 - 22.568 - 23.366 - 24.135 - 24.891 - 25.672 - 26.386 - 27.158 - 28.071 - 28.821 - 29.704 - 30.551 - 31.388 - 32.161 - 33.041 - 33.934 - 34.778 - 35.752 - 36.597 - 37.435 - 38.395 - 39.286 - 40.173 - 41.064 |S22| 0.12414 0.12774 0.13152 0.13622 0.13975 0.14370 0.14796 0.15201 0.15562 0.16040 0.16438 0.16843 0.17329 0.17724 0.18220 0.18674 0.19068 0.19574 0.20063 0.20541 0.21019 0.21526 0.22065 0.22551 0.23111 0.23653 0.24174 S22 ∠φ 158.434 155.044 151.453 148.114 145.204 142.104 139.028 136.155 133.387 130.458 127.735 124.907 122.375 119.612 116.735 114.476 111.831 109.296 106.823 104.361 101.936 99.673 97.38 95.15 92.952 90.83 88.712 MMG3008NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration MMG3008NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3008NT1 RF Device Data Freescale Semiconductor 11 MMG3008NT1 12 RF Device Data Freescale Semiconductor MMG3008NT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 3 4 5 Date Mar. 2007 July 2007 Mar. 2008 • • Description Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3. • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 MMG3008NT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3008NT1 Document Number: RF Device Data MMG3008NT1 Rev. 5, 3/2008 Freescale Semiconductor 15