MMG3011NT1

Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small - signal RF. Features • Frequency: 0 to 6000 MHz • P1dB: 15 dBm @ 900 MHz • Small - Signal Gain: 15 dB @ 900 MHz • Third Order Output Intercept Point: 28 dBm @ 900 MHz • Single 5 Volt Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3011NT1 0 - 6000 MHz, 15 dB 15 dBm InGaP HBT 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC 12 Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 15 - 18 - 25 15 28 2140 MHz 14 - 25 - 18 13.5 26.5 3500 MHz 12 - 25 - 17 13.5 26 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 6 80 10 - 65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (3) 83 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3011NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 13.5 — — — — — 32 — Typ 15 - 18 - 25 15 28 4.6 41 5 Max — — — — — — 48 — Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C MMG3011NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 20 Gp, SMALL−SIGNAL GAIN (dB) TC = 85°C 15 - 40°C 0 25°C S11, S22 (dB) −10 S22 −20 S11 −30 VCC = 5 Vdc VCC = 5 Vdc ICC = 41 mA −40 4 0 1 2 f, FREQUENCY (GHz) 3 4 10 5 0 1 2 f, FREQUENCY (GHz) 3 Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 17 P1dB, 1 dB COMPRESSION POINT (dBm) 16 900 MHz 15 14 13 12 3500 MHz 11 10 5 7 9 11 13 15 Pout, OUTPUT POWER (dBm) 1960 MHz 2140 MHz VCC = 5 Vdc ICC = 41 mA 17 16 15 14 13 12 11 10 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 41 mA Gp, SMALL−SIGNAL GAIN (dB) 2600 MHz Figure 4. Small - Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 80 ICC, COLLECTOR CURRENT (mA) 70 60 50 40 30 20 10 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V) 30 Figure 5. P1dB versus Frequency 27 24 21 VCC = 5 Vdc ICC = 41 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4 18 15 Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMG3011NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 33 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 31 30 29 28 27 26 25 24 −40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing −20 0 20 40 60 80 100 30 27 24 21 f = 900 MHz 1 MHz Tone Spacing 18 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V) T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Collector Voltage Figure 9. Third Order Output Intercept Point versus Case Temperature −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 105 −40 MTTF (YEARS) VCC = 5 Vdc ICC = 41 mA f = 900 MHz 1 MHz Tone Spacing 103 −3 0 3 6 9 12 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 41 mA −50 104 −60 −70 −80 −6 Figure 10. Third Order Intermodulation versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 11. MTTF versus Junction Temperature 8 −20 VCC = 5 Vdc, ICC = 41 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) NF, NOISE FIGURE (dB) 6 −30 −40 4 −50 2 VCC = 5 Vdc ICC = 41 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4 −60 −70 −3 0 3 6 9 12 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3011NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 300 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 10 S21, S11, S22 (dB) 0 −10 S22 −20 −30 −40 0 S11 MMG30XX Rev 2 200 300 400 500 C1 L1 C2 S21 R1 C4 C3 VCC = 5 Vdc ICC = 41 mA 100 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2, C3 C4 L1 R1 Description 0.01 μF Chip Capacitors 1000 pF Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Taiyo Yuden Panasonic MMG3011NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) 0 −10 S22 −20 −30 −40 300 S11 VCC = 5 Vdc ICC = 41 mA 800 1300 1800 2300 2800 3300 3800 MMG30XX Rev 2 C1 L1 C2 R1 C4 C3 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.01 μF Chip Capacitor 1000 pF Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number C0603C151J5RAC C0603C103J5RAC C0603C102J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3011NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C, 50 Ohm System) f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 S11 |S11| 0.06552 0.06383 0.06269 0.06117 0.05981 0.05830 0.05702 0.05620 0.05480 0.05404 0.05345 0.05300 0.05301 0.05337 0.05401 0.05502 0.05607 0.05712 0.05849 0.06056 0.06216 0.06385 0.06581 0.06795 0.07029 0.06417 0.06615 0.06834 0.07037 0.06361 0.06510 0.06709 0.06871 0.07086 0.07328 0.07577 0.07845 0.08096 0.08378 0.08710 0.08957 0.09160 0.09580 0.09801 ∠φ 170.033 167.931 165.117 162.063 158.66 154.766 150.967 147.157 143.805 139.862 136.215 132.595 129.164 125.784 122.842 120.061 117.736 115.541 113.614 112.274 111.255 110.823 110.396 110.14 110.037 110.3 110.33 110.566 111.203 106.262 104.31 103.387 101.77 100.502 99.404 98.261 97.17 96.588 95.835 94.791 94.206 93.044 92.472 91.352 |S21| 5.96942 5.93739 5.91539 5.89348 5.87619 5.86975 5.85785 5.84533 5.83028 5.81371 5.79406 5.77608 5.75924 5.73951 5.71885 5.69616 5.67188 5.65082 5.62851 5.60006 5.57557 5.55100 5.52258 5.49787 5.47256 5.44429 5.41593 5.38670 5.35727 5.33305 5.30415 5.26958 5.24166 5.21283 5.18411 5.15395 5.12325 5.09284 5.06020 5.03015 5.00175 4.96977 4.93541 4.90425 S21 ∠φ 176.263 174.155 171.527 169.546 167.518 165.398 163.377 161.303 159.19 157.192 155.172 153.133 151.135 149.108 147.093 145.064 143.066 141.112 139.109 137.159 135.169 133.202 131.231 129.289 127.359 125.432 123.531 121.627 119.73 117.89 116 114.125 112.251 110.413 108.549 106.674 104.849 102.996 101.184 99.346 97.519 95.715 93.926 92.125 |S12| 0.09975 0.09991 0.10015 0.10045 0.10063 0.10085 0.10108 0.10131 0.10142 0.10154 0.10159 0.10166 0.10172 0.10177 0.10184 0.10204 0.10209 0.10222 0.10236 0.10243 0.10254 0.10280 0.10297 0.10307 0.10327 0.10350 0.10367 0.10385 0.10409 0.10444 0.10462 0.10474 0.10505 0.10523 0.10547 0.10576 0.10592 0.10612 0.10637 0.10667 0.10686 0.10722 0.10725 0.10767 S12 ∠φ - 0.816 - 1.18 - 2.477 - 2.883 - 3.34 - 4.05 - 4.506 - 5.159 - 5.766 - 6.253 - 6.83 - 7.449 - 7.985 - 8.608 - 9.178 - 9.746 - 10.319 - 10.915 - 11.506 - 12.103 - 12.71 - 13.306 - 13.892 - 14.559 - 15.203 - 15.851 - 16.46 - 17.039 - 17.682 - 18.324 - 18.939 - 19.656 - 20.294 - 20.945 - 21.577 - 22.375 - 23.012 - 23.742 - 24.419 - 25.036 - 25.835 - 26.591 - 27.253 - 27.931 |S22| 0.13385 0.13500 0.13601 0.13724 0.13832 0.14046 0.14191 0.14371 0.14461 0.14562 0.14624 0.14664 0.14651 0.14648 0.14551 0.14435 0.14281 0.14087 0.13859 0.13641 0.13320 0.12952 0.12567 0.12169 0.11718 0.11263 0.10814 0.10311 0.09824 0.09725 0.09352 0.09017 0.08614 0.08224 0.07847 0.07419 0.07045 0.06627 0.06270 0.05860 0.05542 0.05191 0.04928 0.04677 S22 ∠φ - 2.955 - 4.514 - 6.374 - 9.6 - 12.707 - 14.848 - 17.031 - 19.568 - 21.523 - 23.875 - 25.878 - 28.005 - 30.174 - 32.244 - 34.496 - 36.557 - 38.707 - 40.982 - 43.169 - 45.576 - 47.809 - 50.265 - 52.695 - 55.267 - 57.902 - 60.543 - 63.335 - 66.301 - 69.317 - 65.446 - 67.448 - 69.038 - 71.347 - 73.345 - 75.924 - 78.51 - 81.64 - 85.166 - 88.825 - 93.023 - 97.743 - 103.413 - 109.11 - 115.508 (continued) MMG3011NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 S11 |S11| 0.10125 0.10384 0.10702 0.11008 0.11241 0.11540 0.11824 0.12090 0.12340 0.12606 0.12922 0.13144 0.13428 0.13713 0.13914 0.14320 0.14613 0.14898 0.15264 0.15656 0.15948 0.16325 0.16694 0.17113 0.17493 0.17906 0.18310 ∠φ 90.343 89.16 88.397 87.519 86.11 85.045 83.877 82.346 81.156 79.687 78.399 77.016 75.734 74.325 72.892 71.422 70.248 69.069 67.768 66.632 65.655 64.574 63.679 62.876 62.049 61.193 60.522 |S21| 4.87215 4.84064 4.80597 4.77373 4.73852 4.71080 4.67765 4.64616 4.61372 4.58063 4.55022 4.51863 4.49057 4.45366 4.42536 4.39730 4.36561 4.33420 4.30556 4.27446 4.24479 4.21546 4.18743 4.15740 4.12688 4.09892 4.06981 S21 ∠φ 90.327 88.561 86.77 85.006 83.289 81.53 79.803 78.061 76.324 74.605 72.881 71.172 69.495 67.734 66.061 64.387 62.698 61.007 59.316 57.648 55.984 54.301 52.638 50.961 49.288 47.63 45.971 |S12| 0.10777 0.10817 0.10841 0.10869 0.10879 0.10916 0.10931 0.10958 0.10994 0.10994 0.11034 0.11063 0.11089 0.11109 0.11140 0.11161 0.11191 0.11211 0.11252 0.11258 0.11281 0.11317 0.11329 0.11352 0.11374 0.11391 0.11410 S12 ∠φ - 28.67 - 29.394 - 30.211 - 30.924 - 31.661 - 32.408 - 33.203 - 33.929 - 34.621 - 35.444 - 36.246 - 37.03 - 37.754 - 38.64 - 39.407 - 40.164 - 40.968 - 41.861 - 42.74 - 43.528 - 44.448 - 45.247 - 46.134 - 46.992 - 47.856 - 48.768 - 49.604 |S22| 0.04452 0.04294 0.04205 0.04158 0.04157 0.04231 0.04340 0.04508 0.04725 0.05010 0.05315 0.05620 0.06004 0.06342 0.06743 0.07181 0.07596 0.08043 0.08543 0.09047 0.09540 0.10082 0.10661 0.11195 0.11808 0.12404 0.13009 S22 ∠φ - 122.296 - 129.541 - 138.1 - 146.363 - 154.578 - 162.984 - 171.06 - 178.591 174.366 167.162 160.781 154.624 149.451 144.065 138.972 134.77 130.079 125.992 122.138 117.963 114.29 110.967 107.412 104.192 101.204 98.182 95.337 MMG3011NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration MMG3011NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3011NT1 RF Device Data Freescale Semiconductor 11 MMG3011NT1 12 RF Device Data Freescale Semiconductor MMG3011NT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 3 4 5 Date Mar. 2007 July 2007 Mar. 2008 • • Description Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3. • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 MMG3011NT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3011NT1 Document Number: RF Device Data MMG3011NT1 Rev. 5, 3/2008 Freescale Semiconductor 15