MMM5063

Freescale Semiconductor, Inc. Advance Information MMM5063/D Rev. 0.2, 09/2003 Tri-Band GSM GPRS 3.5 V Power Amplifier ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MMM5063 (Scale 1:1) Package Information Plastic Package Case 1383 (Module, 7x7 mm) Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Ordering Information Device MMM5063 Device Marking See Figure 25 Package Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/ PCS1900 GPRS handheld radios. This fully integrated Power Amplifier uses a patented concept to realize the 50 Ω matching on-chip through integration of passives on the GaAs die. This allows module functionality in a very small 7 x 7 mm package and achieves best-inclass Power Amplifier performance and multi-band capability. Applications: • • • • • • Tri-Band GSM900 DCS1800 and PCS1900 Guaranteed for 25% Duty Cycle Single Supply Enhancement Mode GaAs MESFET Technology Internal 50 Ω Input/Output Matching High Gain Three Stage Amplifier Design Typical 3.5 V Characteristics: Pout = 35.2 dBm, PAE = 53% for GSM Pout = 33.8 dBm, PAE = 44% for DCS Pout = 34 dBm, PAE = 43% for PCS • • Optimized and Guaranteed for Open-Loop Power Control Applications Small 7 x 7 mm Package Features: This document contains information on a pre-production product. Specifications and Pre-production information herein are subject to change without notice. © Motorola, Inc., 2003. All rights reserved. For More Information On This Product, Go to: www.freescale.com Electrical Specifications Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 VDCS1 VDCS2 VDCS3 Vreg Vapc DCS/PCS In DCS/PCS AMP DCS/PCS Out GSM In GSM AMP GSM Out VGSM1 VGSM2 VGSM3 VBS VdB This device contains 26 active transistors. Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 1. Simplified Block Diagram 1 Electrical Specifications Table 1. Maximum Ratings Rating Supply Voltage Symbol VGSM1,2,3, VDCS1,2,3, VdB GSM IN, DCS/PCS IN Value 6.0 Unit V RF Input Power RF Output Power GSM Section DCS/PCS Section Operating Case Temperature Range Storage Temperature Range Die Temperature 11 dBm dBm GSM OUT DCS/PCS OUT TC Tstg TJ 38 36 -35 to 100 -55 to 150 150 °C °C °C NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤150 V and Machine Model (MM) ≤50 V. Additional ESD data available upon request. 3. Meets Moisture Sensitivity Level (MSL) 3. See Figure 25 on page 17 for additional details. 2 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Electrical Specifications ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. Recommended Operating Conditions Characteristic Drain Supply Voltage Bias Supply Voltage Regulated Voltage Power Control Voltage Band Select Input Power GSM Symbol VGSM1,2,3, VDCS1,2,3 VdB VREG Vapc VBS GSM IN DCS/PCS IN Min 2.7 2.7 2.5 0 0 -1.0 2.0 Typ 2.8 1.8 2.8 Max 5.5 5.5 3.0 2.8 3.0 8.0 10 Unit V V V V V dBm dBm Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Input Power DCS/PCS Table 3. Control Requirements Characteristic Current for Vreg @ 2.8 V Band Select Low Band Enable Voltage High Band Enable Voltage Current for VBS = 2.8 V Symbol Ireg VBS 2.2 0 IBS 2.8 0.76 0.3 1.0 mA Min Typ 7.7 Max 10 Unit mA V Table 4. Electrical Characteristics (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit GSM 900 Section(Pin = -1.0 dBm, VGSM1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = VBS= 2.8 V, Vramp = 1.8 V pulsed) Frequency Range Output Power Power Added Efficiency Output Power @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) Power Added Efficiency @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) Harmonic Output 2fo ≥3fo BW Pout PAE Pout 880 34.2 48 32.5 35.2 53 33.4 915 MHz dBm % dBm PAE 48 54 - % dBc -37 -60 -33 -45 MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 3 Electrical Specifications Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Second Harmonic Leakage at DCS Output (Crosstalk isolation) Input Return Loss Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V) Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) Symbol Min - Typ -28 10 -45 Max -15 -40 Unit dBm dB dBm dBm |S11| Poff NP - NP - -80 -81 dBm Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) -84 -86 -77 -81 Pspur - - -60 dBc No Degradation in Output Power Before and After Test DCS Section(Pin = 2.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range Output Power Power Added Efficiency Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Harmonic Output 2fo ≥3fo Input Return Loss Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Noise Power in Rx Band @ Pin = 2.0 dBm @ fo + 20 MHz (fo = 1785 MHz) (100 kHz measurement bandwidth) Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) |S11| Poff BW Pout PAE Pout 1710 32.5 38 31 33.8 44 32 1785 MHz dBm % dBm PAE 38 45 - % dBc - -65 -50 9.0 -40 -45 -45 -35 dB dBm NP - -78 -75 dBm Pspur - - -60 dBc 4 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Electrical Specifications ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) Symbol Min Typ Max Unit No Degradation in Output Power Before and After Test PCS Section(Pin = 3.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range Output Power Power Added Efficiency BW Pout PAE Pout 1850 32.5 37 31 34 43 32 1910 MHz dBm % dBm Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Harmonic Output 2fo ≥3fo Input Return Loss Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Noise Power in Rx Band @ Pin = 3.0 dBm @ fo + 20 MHz (fo = 1910 MHz) (100 kHz measurement bandwidth) Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) PAE 37 43 - % dBc |S11| Poff - -65 -50 5.0 -35 -45 -45 -32 dB dBm NP - -78 -75 dBm Pspur - - -60 dBc No Degradation in Output Power Before and After Test MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 5 Typical Performance Characteristics Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 2 Typical Performance Characteristics 2.1 GSM 38 60 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 37 36 35 34 33 32 880 TA = -35°C 25°C 85°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V TA = -35°C 55 25°C 50 85°C 45 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 40 880 887 894 901 908 915 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 887 894 901 908 915 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 2. Output Power versus Frequency -20 H2, SECOND HARMONIC (dBc) Figure 3. Power Added Efficiency versus Frequency 38 -22 CROSSTALK (dBm) VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 37 36 35 34 33 32 880 TA = 85°C 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V -24 -26 -28 -30 -32 -34 880 25°C 887 894 901 TA = 85°C -35°C -35°C 908 915 887 894 901 908 915 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Crosstalk versus Frequency Figure 5. Second Harmonic Output versus Frequency 6 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Typical Performance Characteristics ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 70 H3, THIRD HARMONIC (dBc) 69 68 TA = -35°C 25°C 67 66 65 64 63 880 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 85°C 887 894 901 908 915 f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 6. Third Harmonic Output versus Frequency ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 2.2 DCS 34.4 Pout, OUTPUT POWER (dBm) 48 TA = -35°C PAE, POWER ADDED EFFICIENCY (%) 34.2 34 33.8 33.6 33.4 33.2 33 1710 47 46 45 25°C 44 43 42 41 40 1710 85°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V TA = -35°C 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 85°C 1735 1760 1785 1735 1760 1785 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency 72 H2, SECOND HARMONIC (dBc) H3, THIRD HARMONIC (dBc) Figure 8. Power Added Efficiency versus Frequency 60 VGSM1,2,3 = 3.5 V 59 58 57 56 55 54 1710 VdB = 3.5 V Vapc = 2.2 V TA = -35°C 25°C 71 70 69 68 67 66 65 1710 TA = 85°C 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V 35°C 1760 Vapc = 2.2 V 85°C 1735 1785 1735 1760 1785 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 9. Second Harmonic Output versus Frequency Figure 10. Third Harmonic Output versus Frequency MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 7 Typical Performance Characteristics Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 46 PAE, POWER ADDED EFFICIENCY (%) 2.3 PCS 34.8 34.6 Pout, OUTPUT POWER (dBm) TA = -35°C TA = -35°C 44 25°C 42 40 38 36 1850 34.4 34.2 34 33.8 33.6 33.4 33.2 33 1850 1865 1880 f, FREQUENCY (MHz) 1895 1910 85°C 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 85°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 1865 1880 f, FREQUENCY (MHz) 1895 1910 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 11. Output Power versus Frequency 70 TA = 85°C H2, SECOND HARMONIC (dBc) H3, THIRD HARMONIC (dBc) Figure 12. Power Added Efficiency versus Frequency 59 58 57 56 55 54 53 52 51 50 1910 49 1850 VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 1865 1880 f, FREQUENCY (MHz) 1895 1910 85°C TA = -35°C 25°C 69 68 67 66 65 64 1850 25°C -35°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 1865 1880 f, FREQUENCY (MHz) 1895 Figure 13. Second Harmonic Output versus Frequency Figure 14. Third Harmonic Output versus Frequency 8 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor,Descriptions and Connections Inc. Contact 3 Contact Descriptions and Connections Pin Symbol ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 5. Contact Function Description Description 1 2 3 4 5 6 Vreg VdB DCS/PCS Out VDCS3 VDCS2 VDCS1 Vapc DCS/PCS In GSM In VGSM1 VGSM2 VGSM3 GSM Out VBS Regulated dc voltage for bias circuit DC supply voltage for active bias circuits connected to the battery DCS/PCS RF output DCS/PCS DC supply voltage for 3rd stage DCS/PCS DC supply voltage for 2nd stage DCS/PCS DC supply voltage for 1st stage Power control for both line-ups (Vapc = 0 V, Pout = Poff, Vapc = 1.8 V, Pout = Pmax) DCS/PCS RF input GSM RF input GSM DC supply voltage for 1st stage GSM DC supply voltage for 2nd stage GSM DC supply voltage for 3rd stage GSM RF output Band selection between GSM and DCS/PCS Freescale Semiconductor, Inc... 7 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 8 9 10 11 12 13 14 Pin 1 Pad Corner Vreg VdB DCS/PCS Out VBS VDCS3 VDCS2 GSM Out (0.60) Ground Plane VDCS1 Vramp DCS/PCS In VGSM3 VGSM2 (0.95) VGSM1 GSM In NOTE: For optimum performance VGSM1 and VGSM2, as well as VDCS1 and VDCS2, must be strapped together on the application demobard. Figure 15. Contact Connections (Bottom View) MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 9 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 4 Application Information 4.1 Power Control Considerations The MMM5063 is designed for open loop (drain control) applications. A PMOS FET is used to switch the MMM5063 drain and vary the supply voltage from 0 to the battery voltage setting (Vbat). The simplified concept schematic (see Figure 22) describes the application circuit used to control the device through the drain voltage. A drain control provides a linear transfer function which is repeatable versus control voltage (see Figure 16). 4.0 3.5 Freescale Semiconductor, Inc... Pout, OUTPUT POWER (W) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 VD2, DRAIN VOLTAGE SQUARED (V2) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 16. Output Power versus Drain Voltage 4.2 GSM Second Harmonic (H2) Trap Circuitry When transmitting in GSM saturated mode, the second harmonic is naturally present at the RF output of the PA and reaches the antenna after additional filtering in the front-end. ETSI specifies that harmonic level cannot exceed -36 dBm. In order to improve H2 rejection in low Band (GSM), an H2 trap has been developed. The topology is based on a Low Pass π Cell Filter (see Figure 17) where the first shunt capacitor is actually part of the PA output match. GSM Out 8.2 pF 0402 Murata 460 pH 7.5 nH Coilcraft 0603 Switchplexer 2.2 pF 0402 Murata 460 pH Figure 17. Low Pass Filter This circuit reduces H2 level by 7 to 8 dB with low in-band insertion losses (mainly due to the series inductor). Moreover, this structure can be used to match Power amplifier module output to the switchplexer. 10 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information 4.3 Application Schematics and Printed Circuit Boards Battery PMOS Vramp CE [Note 1] ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Vreg VAPC MMM5063 Vd VdB GSM Out DCS/PCS Out Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 VBS GSM In DCS/PCS In [Note 2] NOTES: 1. Op/Amp is either external (with an enable pin CE) or in an ASIC. 2. The MMM5063 requires 4 to 6 RF/LF decoupling capacitors (not shown). Figure 18. Open Loop Control Application Schematic Figure 18 represents the complete Power Amplifier implementation including the MMM5063 Amplifier Module and the Control Circuitry. This functionality is realized with two separate printed circuit boards; the PA Evaluation Circuit with schematic shown in Figure 21 and PCB Layout shown in Figure 23, and the Power Amplifier Control Loop with schematic shown in Figure 22 and PCB Layout shown in Figure 24. The PA Evaluation Circuit is straightfoward and, due to the MMM5063’s high level of integration, requires only a few passive components around the package. These components are mainly de-coupling capacitors. The Power Amplifier Control Loop is based on an operational amplifier driving a PMOS transistor. The PMOS device functions as a linear drain voltage regulator controlled by Vrampwith a typical gain of 2 which is set through the resistive divider R4 and R5 as shown in Figure 22. To control output power through the drain, Vapc must be indexed to the drain voltage to prevent the PA Section from drawing excessive current especially at low output power. Nevertheless, Vapc should stay above 0.8 V to provide sufficient gain for the line-up. Figure 19 describes the application circuit used to control Vapc through the drain voltage. It uses Vreg to pre-position Vapc at 0.9 V and add a voltage which is dependent on the drain Voltage. Vreg = 2.8 V 0 V < Vdrain < VBAT R8 = 1.0 kΩ Vapc R7 = 560 Ω RVAPC = 700 Ω Internal to the die Figure 19. MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 11 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 R8 and RVapc set Vapc at 0.9 V while R7 sets the Vapc slope. Vapc versus Vdrain is shown in the Figure 20. 2.4 2.2 2.0 1.8 Vapc (V) 1.6 1.4 1.2 1.0 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 0.8 0 0.5 1.0 1.5 2.0 Vdrain (V) 2.5 3.0 3.5 4.0 Figure 20. Vapc versus Vdrain It is possible that the Power Control DAC output voltage can be in the 200 mV to 2.0 V range. This raises a concern for the MMM5063 ramp control voltage (Vramp) which must start at 0 V to get enough output power dynamic range. To overcome this limitation, a resistor (R6 in Figure 22) is used to set an additional offset (200 mV with R6 = 39 kΩ). This residual voltage is then subtracted the DAC output voltage through the differential Operational Amplifier. 12 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C9 10 nF C1 N/C C6 N/C C2 330 pF C11 1.0 nF Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C13 N/C C15 10 nF DCS/PCS In DCS/ PCS In Vapc VDCS2 VDCS1 VDCS3 C8 22 pF GSM I n DCS/PCS Out C4 N/C VGSM1 GSM Out VGSM2 C3 N/C GSM In VGSM3 C18 100 pF VdB Vreg VBS C17 3.9 pF C 7 22 pF DCS/PCS Out C14 1 0 nF C16 6.8 pF C5 220 pF C 12 2 2 pF C10 47 pF NOTE: N/C = No Connect, Do not mount. GSM Out Figure 21. PA Evaluation Circuit MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 13 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C6 47 nF C5 10 nF C1 68 µF NOTE: N/C = No Connect, Do not mount. R8 1.0 k R10 N/C R7 560 Ω R3 12 k C3 15 pF Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 R2 150 Ω C2 330 pF C18 10 nF R5 5.6 k R11 150 Ω C12 10 nF C4 330 pF R6 39 k R4 5.6 k Figure 22. Power Amplifier Control Loop 14 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 23. PA Evaluation Circuit PCB Table 6. PA Evaluation Circuit PCB Bill of Materials Reference C1, C3, C4, C6, C13 C2 C5 C7, C8, C12 C9, C14, C15 C10 C11 C16 C17 C18 J2, J3, J4, J5 Value N/C - Do not mount 330 pF 220 pF 22 pF 10 nF 47 pF 1.0 nF 6.8 pF 3.9 pF 100 nF 50 Ω GRM36COG330J50 GRM36X7R221K50 GRM36COG220J50 GRM36X7R103K25 GRM36COG470J50 GRM36X7R102K25 GRM36COG6R8J50 GRM36COG3R9J50 GRM36X7R104K25 142-0711-821 Murata Murata Murata Murata Murata Murata Murata Murata Murata Johnson Part Number Manufacturer MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 15 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 24. Power Amplifier Control Loop PCB Table 7. Power Amplifier Control Loop PCB Bill of Materials Reference C1 C2 C3 C4 C5, C12, C18 C6 J1, J2, J3 Q1 Q2 R1, R8 R2 R3 R4, R5 R6, R10 R7 R11 U1 68 µF 330 pF 15 pF 330 pF 10 nF 47 nF DC connector Power MOSFET N/C - Do not mount 1.0 k 150 Ω 12 k 5.6 k N/C - Do not mount 560 Ω 100 Ω CMOS Op Amp CRG0402 5% 560 O CRG0402 5% 100 O AD8591 NEOHM NEOHM Analog Devices CRG0402 5% 1 kO CRG0402 5% 150 O CRG0402 5% 12 kO CRG0402 5% 5.6 kO NEOHM NEOHM NEOHM NEOHM NTHS5445T ON Semiconductor Value Part Number 293D685X9020C GRM36COG330J50 GRM36COG150J50 GRM36x7R331K50 GRM36X7R103K25 GRM36X7R473K10 Manufacturer Sprague Murata Murata Murata Murata Murata 16 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Packaging Information 5 Packaging Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Shipping, Packaging and Marking Information Tape Width: 16.0 mm Tape Pitch 12 mm (part to part) Reel Diameter: 330 mm (13 in) Component Orientation: Parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. Dry Pack: This device meets Moisture Sensitiviy Level (MSL) 3. Parts will be shipped in Dry Pack. Parts must be stored at 30°C and 60% relative humidity with time out of dry pack not to exceed 168 hours. In the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40°C Dry Out: Bake devices at 40°C ≤ TA ≤ 45°C, 5% Relative Humidity for at least 192 hours. MMM5063 LLLLLL WW AWLYYWW Marking (Top View) Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 2) Room Temperature Dry Out: Store devices at less than 20% Relative Humidity for at least 500 hours. Marking: 1st line: 3rd Line: 4th Line: Motorola Logo Wafer lot number (coded on 6 characters) followed by wafer number (coded on 3 digits) Assy site code (on 1 or 2 characters), followed by Wafer Lot Number (coded on 1 or 2 characters), followed by Year (on 2 digits) and Workweek (on 2 digits). 2nd Line: Partnumber coded on 7 characters Tape & Reel Orientation (Top View) Figure 25. Packaging Information MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 17 Packaging Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 7 A B 0.1 7 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 1.01 ± 0.1 0.7 ± 0.05 0.1 A 2.95±0.05 2.45±0.05 0.5±0.05 3.15 2.24 0.7 0.3 2.2 2.55 1±0.05 2.9 0.8±0.05 0.97 3±0.05 0 9X 3.15 2.52 1.77 1.02 0.07 0.5±0.05 SQ 2.37±0.05 2.4 0.5±0.05 2.215 2.4 0.5±0.05 1.03 1.65 0 0.5±0.05 3.15 2.8 2.4 PIN ONE IDENT 1.2±0.05 0.8±0.05 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. BOTTOM VIEW 0.1 L ABC APPLIES TO ALL PAD LOCATIONS. Figure 26. Outline Dimensions for 7x7 mm Module (Case 1383-02, Issue A) 18 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 NOTES Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 19 Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu Minato-ku, Tokyo 106-8573 Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 TECHNICAL INFORMATION CENTER: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. 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