MRD6S18060MR1

Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF6S18060 Rev. 2, 5/2006 RF Power Field Effect Transistors MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 216 1.2 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060MBR1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 77°C, 25 W CW Symbol RθJC Value (1) 0.81 0.95 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S18060MR1 MRF6S18060MBR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.8 0.24 5.3 3 4 — — Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W, f = 1930 MHz, f = 1990 MHz Gps 14 15 17 dB Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point 1. Part is internally matched both on input and output. ηD IRL P1dB 48 — 60 50 - 12 65 — -9 — % dB W (continued) MRF6S18060MR1 MRF6S18060MBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ = 450 mA, Pout = 25 W Avg., 1805 MHz