MRF1511NT1

Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 6, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D • Specified Performance @ 175 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11.5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive Features • Excellent Thermal Stability G • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband UHF/VHF Demonstration Amplifier Information S Available Upon Request • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1511NT1 175 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = Derate above 25°C Storage Temperature Range Operating Junction Temperature 25°C (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +40 ± 20 4 62.5 0.5 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (2) 2 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Calculated based on the formula PD = TJ – TC Rating 1 Package Peak Temperature 260 Unit °C RθJC 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF1511NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0) On Characteristics Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 170 μA) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Gps η — — 13 70 — — dB % Ciss Coss Crss — — — 100 53 8 — — — pF pF pF VGS(th) VDS(on) 1 — 1.6 0.4 2.1 — Vdc Vdc IDSS IGSS — — — — 1 1 μAdc μAdc Symbol Min Typ Max Unit MRF1511NT1 2 RF Device Data Freescale Semiconductor VGG C8 + C7 C6 R4 B1 R3 L4 C5 R2 Z6 R1 N1 RF INPUT C1 Z1 L1 C2 Z2 L2 C3 C4 Z3 Z4 Z5 DUT C9 C10 C11 C12 Z7 Z8 L3 Z9 C18 B2 C17 C16 + C15 VDD Z10 C14 C13 N2 RF OUTPUT B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) C1, C5, C18 120 pF, 100 mil Chip Capacitor C2, C10, C12 0 to 20 pF, Trimmer Capacitor C3 33 pF, 100 mil Chip Capacitor C4 68 pF, 100 mil Chip Capacitor C6, C15 10 μF, 50 V Electrolytic Capacitor C7, C16 1,200 pF, 100 mil Chip Capacitor C8, C17 0.1 μF, 100 mil Chip Capacitor C9 150 pF, 100 mil Chip Capacitor C11 43 pF, 100 mil Chip Capacitor C13 24 pF, 100 mil Chip Capacitor C14 300 pF, 100 mil Chip Capacitor L1, L3 12.5 nH, A04T, Coilcraft L2 26 nH, 4 Turn, Coilcraft L4 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 15 Ω, 0805 Chip Resistor 1.0 kΩ, 1/8 W Resistor 1.0 kΩ, 0805 Chip Resistor 33 kΩ, 1/8 W Resistor 0.200″ x 0.080″ Microstrip 0.755″ x 0.080″ Microstrip 0.300″ x 0.080″ Microstrip 0.065″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.095″ x 0.080″ Microstrip 0.418″ x 0.080″ Microstrip 1.057″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 10 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) −5 VDD = 7.5 V 8 155 MHz 135 MHz 6 175 MHz 4 −10 135 MHz −15 175 MHz 155 MHz −20 2 VDD = 7.5 V 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 −25 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 2. Output Power versus Input Power Figure 3. Input Return Loss versus Output Power MRF1511NT1 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS, 135 - 175 MHz 16 155 MHz 135 MHz GAIN (dB) 12 175 MHz Eff, DRAIN EFFICIENCY (%) 14 70 155 MHz 60 50 40 30 20 10 0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 0 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 VDD = 7.5 V 135 MHz 175 MHz 10 8 VDD = 7.5 V 6 Figure 4. Gain versus Output Power Figure 5. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 11 10 9 8 7 6 5 4 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 VDD = 7.5 V Pin = 27 dBm 155 MHz 135 MHz 175 MHz Eff, DRAIN EFFICIENCY (%) 80 70 155 MHz 60 135 MHz 175 MHz 50 VDD = 7.5 V Pin = 27 dBm 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 14 Pout , OUTPUT POWER (WATTS) 12 10 8 6 4 2 4 6 8 10 12 14 16 VDD, SUPPLY VOLTAGE (VOLTS) IDQ = 150 mA Pin = 27 dBm 175 MHz 135 MHz 155 MHz 80 Eff, DRAIN EFFICIENCY (%) 70 155 MHz 60 135 MHz 175 MHz 50 40 30 4 6 8 10 12 IDQ = 150 mA Pin = 27 dBm 14 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Drain Efficiency versus Supply Voltage MRF1511NT1 4 RF Device Data Freescale Semiconductor VGG + C8 C7 C6 R4 B1 R3 L4 C5 R2 Z6 R1 N1 RF INPUT C1 Z1 L1 C2 Z2 Z3 C3 C4 Z4 Z5 DUT C9 C10 Z7 Z8 L3 Z9 C16 B2 C15 C14 + C13 VDD Z10 C12 C11 N2 RF OUTPUT B1, B2 C1, C12 C2 C3, C10 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 C11 L1 L2 L3 Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 24 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 μF, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 μF, 100 mil Chip Capacitor 380 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 82 nH, Coilcraft 55.5 nH, 5 Turn, Coilcraft 39 nH, 6 Turn, Coilcraft N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Type N Flange Mount 15 Ω, 0805 Chip Resistor 51 Ω, 1/2 W Resistor 100 Ω, 0805 Chip Resistor 33 kΩ, 1/8 W Resistor 0.136″ x 0.080″ Microstrip 0.242″ x 0.080″ Microstrip 1.032″ x 0.080″ Microstrip 0.145″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.134″ x 0.080″ Microstrip 0.490″ x 0.080″ Microstrip 0.872″ x 0.080″ Microstrip 0.206″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper Figure 10. 66 - 88 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 66 - 88 MHz 10 77 MHz Pout , OUTPUT POWER (WATTS) 8 88 MHz 6 66 MHz IRL, INPUT RETURN LOSS (dB) 0 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 66 MHz 77 MHz 88 MHz VDD = 7.5 V 4 2 VDD = 7.5 V 0 Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1511NT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS, 66 - 88 MHz 18 66 MHz 77 MHz GAIN (dB) 14 88 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 1 2 3 5 6 7 4 Pout, OUTPUT POWER (WATTS) 8 9 10 VDD = 7.5 V 77 MHz 66 MHz 88 MHz 16 12 10 VDD = 7.5 V 8 Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 11 Eff, DRAIN EFFICIENCY (%) 10 9 8 7 6 5 4 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 VDD = 7.5 V Pin = 25.7 dBm 77 MHz 88 MHz 66 MHz 80 70 60 88 MHz 77 MHz 50 66 MHz VDD = 7.5 V Pin = 25.7 dBm 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 14 Pout , OUTPUT POWER (WATTS) 12 10 77 MHz 8 6 4 2 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) IDQ = 150 mA Pin = 25.7 dBm 66 MHz 88 MHz 80 Eff, DRAIN EFFICIENCY (%) 70 60 88 MHz 77 MHz 66 MHz 50 40 30 5 6 7 8 IDQ = 150 mA Pin = 25.7 dBm 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1511NT1 6 Figure 18. Drain Efficiency versus Supply Voltage RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS X AMPS2) 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 19. MTTF Factor versus Junction Temperature MRF1511NT1 RF Device Data Freescale Semiconductor 7 f = 175 MHz Z o = 10 Ω f = 88 MHz ZOL* 77 66 Zin 155 135 Zin f = 88 MHz 77 66 155 f = 175 MHz 135 ZOL* VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 135 155 175 Zin Zin Ω 20.1 - j0.5 17.0 +j3.6 15.2 +j7.9 ZOL* Ω 2.53 - j2.61 3.01 - j2.48 2.52 - j3.02 Zin VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 66 77 88 Zin Ω 25.3 - j0.31 25.6 +j3.62 26.7 +j6.79 ZOL* Ω 3.62 - j0.751 3.59 - j0.129 3.37 - j0.173 = Complex conjugate of source impedance with parallel 15 Ω resistor and 68 pF capacitor in series with gate. (See Figure 1). = Complex conjugate of source impedance with parallel 15 Ω resistor and 24 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 20. Series Equivalent Input and Output Impedance MRF1511NT1 8 RF Device Data Freescale Semiconductor Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz 30 50 100 150 200 250 300 350 400 450 500 S11 |S11| 0.88 0.88 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.88 0.89 ∠φ - 165 - 171 - 175 - 176 - 177 - 177 - 177 - 177 - 177 - 177 - 176 |S21| 18.92 11.47 5.66 3.75 2.78 2.16 1.77 1.49 1.26 1.08 0.96 S21 ∠φ 95 91 85 82 78 75 72 69 66 64 63 |S12| 0.015 0.016 0.016 0.015 0.014 0.014 0.012 0.013 0.013 0.011 0.012 S12 ∠φ 8 -5 -7 -5 -6 - 10 - 17 - 11 - 17 - 20 - 20 |S22| 0.84 0.84 0.84 0.85 0.84 0.85 0.86 0.86 0.87 0.87 0.88 S22 ∠φ - 169 - 173 - 176 - 176 - 176 - 176 - 176 - 176 - 175 - 175 - 175 IDQ = 800 mA f MHz 30 50 100 150 200 250 300 350 400 450 500 S11 |S11| 0.89 0.88 0.87 0.87 0.87 0.88 0.88 0.88 0.88 0.88 0.89 ∠φ - 166 - 172 - 175 - 177 - 177 - 177 - 177 - 177 - 177 - 177 - 177 |S21| 18.89 11.44 5.65 3.74 2.78 2.16 1.77 1.50 1.26 1.09 0.97 S21 ∠φ 95 91 86 82 78 75 73 70 67 65 64 |S12| 0.014 0.015 0.016 0.014 0.013 0.012 0.015 0.009 0.012 0.012 0.009 S12 ∠φ 10 8 -2 -8 - 18 - 11 - 15 -7 -3 - 18 - 10 |S22| 0.85 0.84 0.85 0.84 0.85 0.85 0.86 0.87 0.87 0.87 0.88 S22 ∠φ - 170 - 174 - 176 - 177 - 177 - 176 - 176 - 176 - 176 - 175 - 175 IDQ = 1.5 A f MHz 30 50 100 150 200 250 300 350 400 450 500 S11 |S11| 0.90 0.89 0.88 0.88 0.88 0.88 0.88 0.89 0.89 0.89 0.89 ∠φ - 168 - 173 - 176 - 177 - 177 - 178 - 177 - 177 - 177 - 177 - 177 |S21| 17.89 10.76 5.32 3.53 2.63 2.05 1.69 1.43 1.22 1.06 0.94 S21 ∠φ 95 91 86 83 80 77 75 72 70 68 67 |S12| 0.013 0.013 0.014 0.013 0.011 0.012 0.013 0.010 0.014 0.011 0.011 S12 ∠φ 2 3 - 19 -6 -4 - 14 -2 -9 -3 -8 - 15 |S22| 0.86 0.86 0.86 0.86 0.86 0.86 0.87 0.87 0.88 0.88 0.88 S22 ∠φ - 172 - 175 - 177 - 177 - 177 - 177 - 177 - 176 - 176 - 176 - 176 MRF1511NT1 RF Device Data Freescale Semiconductor 9 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. Drain Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The MRF1511NT1 10 RF Device Data Freescale Semiconductor MOUNTING The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device’s S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1511NT1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W 1 G MRF1511NT1 12 RF Device Data Freescale Semiconductor ÉÉÉÉÉÉ ÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ 2 3 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S ZONE X VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1511NT1 Document Number: RF Device Data MRF1511N Rev. 6, 9/2006 Freescale Semiconductor 13