MRF1517T1

Freescale Semiconductor Technical Data Replaced by MRF1517NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF1517 Rev. 3, 5/2006 RF Power Field Effect Transistor MRF1517T1 N - Channel Enhancement - Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz, 7.5 Volts Output Power — 8 Watts D Power Gain — 11 dB Efficiency — 55% • Characterized with Series Equivalent Large - Signal Impedance Parameters • Excellent Thermal Stability • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive G • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. S ARCHIVE INFORMATION CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (2) (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +25 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Not designed for 12.5 volt applications. T T 2. Calculated based on the formula PD = J – C RθJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rating 1 Package Peak Temperature 260 Unit °C © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF1517T1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 520 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0) On Characteristics Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 120 μAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) VGG C9 C8 Gps η 10 50 11 55 — — dB % Ciss Coss Crss — — — 66 38 6 — — — pF pF pF VGS(th) VDS(on) gfs 1.0 — 0.9 1.7 0.5 — 2.1 — — Vdc Vdc S IDSS IGSS — — — — 1 1 μAdc μAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION B2 + C7 R3 B1 R2 C18 L1 Z6 DUT C10 C11 C12 C13 Z7 Z8 Z9 Z10 C14 N2 C17 C16 + C15 VDD R1 N1 C1 C2 C3 C4 C5 C6 RF INPUT Z1 Z2 Z3 Z4 Z5 RF OUTPUT B1, B2 C1 C2, C3, C4, C10, C12, C13 C5, C11 C6, C18 C7, C15 C8, C16 C9, C17 C14 L1 N1, N2 Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 43 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 μF, 50 V Electrolytic Capacitor 0.1 μF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 15 Ω, 0805 Chip Resistor 1.0 kΩ, 1/8 W Resistor 33 kΩ, 1/2 W Resistor 0.315″ x 0.080″ Microstrip 1.415″ x 0.080″ Microstrip 0.322″ x 0.080″ Microstrip 0.022″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.050″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip 0.800″ x 0.080″ Microstrip 0.589″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper MRF1517T1 2 Figure 1. 480 - 520 MHz Broadband Test Circuit RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS, 480 - 520 MHz 10 Pout , OUTPUT POWER (WATTS) 8 6 4 2 VDD = 7.5 Vdc 0 500 MHz 480 MHz 0 520 MHz IRL, INPUT RETURN LOSS (dB) −5 −10 −15 −20 VDD = 7.5 Vdc −25 520 MHz 500 MHz 480 MHz ARCHIVE INFORMATION Figure 2. Output Power versus Input Power Figure 3. Input Return Loss versus Output Power MRF1517T1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION 0 0.2 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 1.0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 TYPICAL CHARACTERISTICS, 480 - 520 MHz 18 16 14 GAIN (dB) 12 10 8 6 VDD = 7.5 Vdc 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 520 MHz 500 MHz 80 480 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 1 2 3 5 6 7 8 4 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc 9 10 11 520 MHz 500 MHz 480 MHz ARCHIVE INFORMATION Figure 4. Gain versus Output Power Figure 5. Drain Efficiency versus Output Power 12 10 8 6 4 2 0 Pin = 27 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 500 MHz 520 MHz 480 MHz 80 70 60 50 40 30 Pin = 27 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 480 MHz 500 MHz 520 MHz Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 12 10 8 6 4 2 0 Pin = 27 dBm IDQ = 150 mA 5 6 7 8 9 10 500 MHz 520 MHz 480 MHz 80 70 500 MHz 60 50 40 30 Pin = 27 dBm IDQ = 150 mA 5 6 7 8 9 10 520 MHz 480 MHz Pout , OUTPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (VOLTS) Eff, DRAIN EFFICIENCY (%) VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Drain Efficiency versus Supply Voltage MRF1517T1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) VGG C8 C7 B2 + C6 R3 B1 R2 C17 L1 Z5 Z4 DUT C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 C16 C15 + C14 VDD R1 N1 C1 C2 C3 C4 C5 RF INPUT Z1 Z2 Z3 RF OUTPUT ARCHIVE INFORMATION C1, C13 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 L1 N1, N2 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 μF, 50 V Electrolytic Capacitor 0.1 μF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 10. 400 - 440 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 440 MHz 10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0 0.1 VDD = 7.5 Vdc 0.2 0.3 Pin, INPUT POWER (WATTS) 0.4 0.5 400 MHz 420 MHz 440 MHz −5 −10 −15 −20 −25 VDD = 7.5 Vdc 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 400 MHz 420 MHz 440 MHz 0 Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1517T1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board 12 Ω, 0805 Chip Resistor 1.0 kΩ, 1/8 W Resistor 33 kΩ, 1/2 W Resistor 0.617″ x 0.080″ Microstrip 0.723″ x 0.080″ Microstrip 0.513″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.048″ x 0.080″ Microstrip 0.577″ x 0.080″ Microstrip 1.135″ x 0.080″ Microstrip 0.076″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper TYPICAL CHARACTERISTICS, 400 - 440 MHz 17 15 13 GAIN (dB) 11 9 7 5 VDD = 7.5 Vdc 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 400 MHz 440 MHz 420 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 0 1 2 3 5 6 7 8 4 Pout, OUTPUT POWER (WATTS) 400 MHz 440 MHz 420 MHz VDD = 7.5 Vdc 9 10 11 ARCHIVE INFORMATION Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 12 10 8 6 4 2 0 Pin = 25.5 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 400 MHz 420 MHz 440 MHz Eff, DRAIN EFFICIENCY (%) 80 70 440 MHz 60 50 40 30 400 MHz 420 MHz Pin = 25.5 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 12 10 8 6 4 2 0 Pin = 25.5 dBm IDQ = 150 mA 5 6 7 8 9 10 400 MHz 440 MHz 420 MHz Eff, DRAIN EFFICIENCY (%) 80 70 420 MHz 60 440 MHz 50 40 30 400 MHz Pout , OUTPUT POWER (WATTS) Pin = 25.5 dBm IDQ = 150 mA 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage Figure 18. Drain Efficiency versus Supply Voltage MRF1517T1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Pout , OUTPUT POWER (WATTS) VGG C8 C7 B2 + C6 R3 B1 R2 C17 L1 Z5 Z4 DUT C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 C16 C15 VDD + C14 C5 R1 N1 C1 C2 C3 C4 RF INPUT Z1 Z2 Z3 RF OUTPUT ARCHIVE INFORMATION C1 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 C13 L1 N1, N2 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 0.1 mF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 19. 440 - 480 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 440 - 480 MHz 10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0.0 0.2 VDD = 7.5 Vdc 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 −25 1 2 3 480 MHz 460 MHz 440 MHz −5 −10 −15 480 MHz −20 VDD = 7.5 Vdc 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 0 460 MHz 440 MHz Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MRF1517T1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board 15 Ω, 0805 Chip Resistor 1.0 kΩ, 1/8 W Resistor 33 kΩ, 1/2 W Resistor 0.471″ x 0.080″ Microstrip 1.082″ x 0.080″ Microstrip 0.372″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.050″ x 0.080″ Microstrip 0.551″ x 0.080″ Microstrip 0.825″ x 0.080″ Microstrip 0.489″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper TYPICAL CHARACTERISTICS, 440 - 480 MHz 17 15 460 MHz 13 GAIN (dB) 11 9 7 5 VDD = 7.5 Vdc 1 2 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 480 MHz 440 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 0 1 2 3 VDD = 7.5 Vdc 480 MHz 440 MHz 460 MHz ARCHIVE INFORMATION Figure 22. Gain versus Output Power Figure 23. Drain Efficiency versus Output Power 12 10 8 6 4 2 0 0 200 460 MHz 440 MHz 480 MHz 80 70 480 MHz 60 50 40 30 Pin = 27.5 dBm 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 460 MHz 440 MHz Pin = 27.5 dBm 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 24. Output Power versus Biasing Current Figure 25. Drain Efficiency versus Biasing Current 12 10 8 6 4 2 Pin = 27.5 dBm 0 5 6 7 8 9 10 440 MHz 460 MHz 480 MHz 80 70 480 MHz 60 50 40 30 Pin = 27.5 dBm 5 6 7 8 9 10 460 MHz 440 MHz Pout , OUTPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (VOLTS) Eff, DRAIN EFFICIENCY (%) VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage Figure 27. Drain Efficiency versus Supply Voltage MRF1517T1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 5 6 7 8 4 Pout, OUTPUT POWER (WATTS) 9 10 11 Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) 520 Zin f = 480 MHz f = 440 MHz Zin 480 f = 440 MHz 400 Zin ARCHIVE INFORMATION ZOL* Z o = 10 Ω f = 480 MHz 400 Z o = 10 Ω ZOL* Z o = 10 Ω VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 480 500 520 Zin Zin Ω 1.06 +j1.82 0.97 +j2.01 ZOL* Ω 3.51 +j0.99 2.82 +j0.75 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 440 460 480 Zin Zin Ω 1.62 +j3.41 1.85 +j3.35 1.91 +j3.31 ZOL* Ω 3.25 +j0.98 3.05 +j0.93 2.54 +j0.84 Zin VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 400 420 440 Zin Ω 1.96 +j3.32 2.31 +j3.56 1.60 +j3.45 ZOL* Ω 2.52 +j0.39 2.61 +j0.64 2.37 +j1.04 0.975 +j2.37 1.87 +j1.03 = Complex conjugate of source impedance. = Complex conjugate of source impedance. = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MRF1517T1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION 520 f = 480 MHz ZOL* 440 f = 440 MHz Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz MH 50 100 200 300 400 500 600 700 S11 |S11| 0.84 0.84 0.86 0.88 0.90 0.92 0.94 0.95 0.96 0.96 0.97 ∠φ - 152 - 164 - 170 - 171 - 172 - 172 - 173 - 173 - 174 - 175 - 175 |S21| 17.66 8.86 4.17 2.54 1.72 1.28 0.98 0.76 0.61 0.50 0.40 S21 ∠φ 97 85 72 62 55 50 46 41 38 33 31 |S12| 0.016 0.016 0.015 0.014 0.013 0.013 0.014 0.010 0.011 0.011 0.006 S12 ∠φ 0 5 -5 -8 - 25 - 10 - 22 - 30 - 14 - 31 55 |S22| 0.77 0.78 0.79 0.80 0.83 0.84 0.86 0.86 0.86 0.85 0.88 S22 ∠φ - 167 - 172 - 173 - 172 - 172 - 172 - 171 - 172 - 171 - 172 - 171 ARCHIVE INFORMATION 800 900 1000 IDQ = 800 mA f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.90 0.89 0.90 0.90 0.91 0.92 0.93 0.94 0.94 0.95 0.96 ∠φ - 165 - 172 - 175 - 176 - 176 - 176 - 176 - 176 - 176 - 177 - 177 |S21| 20.42 10.20 4.96 3.17 2.26 1.75 1.39 1.14 0.93 0.78 0.65 S21 ∠φ 94 87 79 73 67 63 59 55 51 45 43 |S12| 0.018 0.015 0.015 0.017 0.013 0.011 0.012 0.015 0.008 0.007 0.008 S12 ∠φ 1 -7 - 12 -2 1 -6 - 31 - 34 - 22 2 - 40 |S22| 0.76 0.77 0.77 0.80 0.82 0.83 0.85 0.88 0.87 0.87 0.90 S22 ∠φ - 164 - 170 - 172 - 171 - 172 - 171 - 171 - 171 - 171 - 172 - 170 IDQ = 1.5 A f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.92 0.90 0.91 0.91 0.92 0.93 0.94 0.94 0.95 0.96 0.97 ∠φ - 165 - 172 - 176 - 176 - 176 - 176 - 176 - 176 - 176 - 177 - 177 |S21| 19.90 9.93 4.84 3.10 2.22 1.73 1.39 1.12 0.93 0.78 0.64 S21 ∠φ 95 88 80 74 68 64 61 56 52 46 44 |S12| 0.017 0.018 0.016 0.014 0.014 0.016 0.013 0.013 0.009 0.008 0.012 S12 ∠φ 3 2 -4 - 11 - 14 -8 - 24 - 24 - 12 10 4 |S22| 0.76 0.77 0.77 0.80 0.81 0.83 0.85 0.87 0.87 0.87 0.89 S22 ∠φ - 164 - 170 - 172 - 172 - 172 - 171 - 171 - 171 - 171 - 173 - 169 MRF1517T1 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. ARCHIVE INFORMATION Cds Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The MRF1517T1 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION ARCHIVE INFORMATION MRF1517T1 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION MOUNTING The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device’s S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. NOTES MRF1517T1 RF Device Data Freescale Semiconductor 13 NOTES MRF1517T1 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W G RF Device Data Freescale Semiconductor ÉÉÉÉ É ÉÉÉÉÉÉ É ÉÉÉÉÉÉ É ÉÉÉÉÉÉ É ÉÉÉÉÉÉ ÉÉÉ 1 3 ZONE X 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC MRF1517T1 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1517T1 1Rev. 3, 5/2006 6 Document Number: MRF1517 RF Device Data Freescale Semiconductor