MRF1570FT1

Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF1570T1 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz • Broadband Demonstration Amplifier Information Available Upon Request • 200_C Capable Plastic Package • Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570T1 MRF1570FT1 470 MHz, 70 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1366 - 04, STYLE 1 TO - 272 - 8 WRAP PLASTIC MRF1570T1 ARCHIVE INFORMATION CASE 1366A - 02, STYLE 1 TO - 272 - 8 PLASTIC MRF1570FT1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value +0.5, +40 ± 20 165 0.5 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.75 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF1570T1 MRF1570FT1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss Coss Crss — — — — — — 500 250 35 pF VGS(th) VDS(on) 1.0 — — — 3 1 Vdc Vdc IDSS — — 1 μA Symbol Min Typ Max Unit ARCHIVE INFORMATION Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz f = 470 MHz pF Gps η dB 10 50 — — — % — MRF1570T1 MRF1570FT1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) pF VGG C14 C13 C12 B1 + C11 R1 Z2 L1 C4 Z4 L3 C6 Z6 R3 Z8 Z10 Z12 C20 DUT C21 R4 Z3 L2 C5 Z5 L4 C7 B2 C19 C18 C17 + C16 Z7 C9 R2 Z9 Z11 Z13 Z15 L10 C23 C10 C38 C37 L9 Z14 C22 B3 B4 C36 C35 C34 + VDD C33 Z16 C24 L5 C26 L7 C28 Z18 C30 RF OUTPUT C32 RF INPUT C1 Z1 C2 C3 C8 Z20 C25 Z17 C27 L6 L8 C29 B5 Z22 Z21 Z19 C31 ARCHIVE INFORMATION VGG C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C32, C37, C43 270 pF, 100 mil Chip Capacitors C2, C20, C21 33 pF, 100 mil Chip Capacitors C3 18 pF, 100 mil Chip Capacitor C4, C5 30 pF, 100 mil Chip Capacitors C6, C7 180 pF, 100 mil Chip Capacitors C8, C9 150 pF, 100 mil Chip Capacitors C10, C15 300 pF, 100 mil Chip Capacitors C11, C16, C33, C39 10 μF, 50 V Electrolytic Capacitors C12, C17, C34, C40 0.1 μF, 100 mil Chip Capacitors C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors C22, C23 110 pF, 100 mil Chip Capacitors C24, C25 68 pF, 100 mil Chip Capacitors C26, C27 120 pF, 100 mil Chip Capacitors C28, C29 24 pF, 100 mil Chip Capacitors C30, C31 27 pF, 100 mil Chip Capacitors C38, C44 240 pF, 100 mil Chip Capacitors L1, L2 17.5 nH, 6 Turn Inductors, Coilcraft L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board 5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33″ ID Inductors 3 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 9.3 Ω Chip Resistors (1206) 0.32″ x 0.080″ Microstrip 0.46″ x 0.080″ Microstrip 0.34″ x 0.080″ Microstrip 0.45″ x 0.080″ Microstrip 0.28″ x 0.240″ Microstrip 0.39″ x 0.080″ Microstrip 0.27″ x 0.080″ Microstrip 0.25″ x 0.080″ Microstrip 0.29″ x 0.080″ Microstrip 0.14″ x 0.080″ Microstrip 0.32″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION VGG C11 GND B1 C12 C13 C14 C2 C4 L1 L3 C38 C6 C10 R1 C8 R3 R4 C9 L9 C22 C23 L10 C44 C37 C20 C24 C26 C27 C21 C25 C43 L6 L5 B3 B4 C33 VDD GND C28 C36 C35 C34 L7 C30 C31 C32 C1 C3 C5 L4 L2 C7 C17 C18 C19 B2 C16 R2 C15 L8 C29 C42 C41 C40 B5 B6 C39 ARCHIVE INFORMATION MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHz 100 IRL, INPUT RETURN LOSS (dB) 80 135 MHz 60 40 150 MHz 20 0 VDD = 12.5 Vdc 0 1 2 3 4 5 6 175 MHz 0 Pout , OUTPUT POWER (WATTS) −5 135 MHz −10 175 MHz 155 MHz −15 VDD = 12.5 Vdc −20 10 20 30 40 50 60 70 80 90 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 3. Output Power versus Input Power Figure 4. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS, 135 - 175 MHz 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 10 155 MHz 175 MHz 135 MHz VDD = 12.5 Vdc η, DRAIN EFFICIENCY (%) 60 50 40 30 VDD = 12.5 Vdc 20 10 70 155 MHz 175 MHz 135 MHz ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Gain versus Output Power Figure 6. Drain Efficiency versus Output Power 90 100 80 60 40 20 0 400 80 135 MHz 155 MHz 175 MHz η, DRAIN EFFICIENCY (%) 155 MHz 175 MHz 135 MHz 70 60 VDD = 12.5 Vdc Pin = 36 dBm 600 800 1000 1200 1400 1600 VDD = 12.5 Vdc Pin = 36 dBm 600 800 1000 1200 1400 1600 50 400 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 7. Output Power versus Biasing Current Figure 8. Drain Efficiency versus Biasing Current 100 Pout , OUTPUT POWER (WATTS) 80 60 40 20 0 10 100 80 60 40 20 0 155 MHz 175 MHz 135 MHz 135 MHz 175 MHz 155 MHz η, DRAIN EFFICIENCY (%) Pin = 36 dBm IDQ = 800 mA 11 12 13 14 15 Pin = 36 dBm IDQ = 800 mA 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Output Power versus Supply Voltage Figure 10. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 Pout , OUTPUT POWER (WATTS) B1 VGG C14 C13 C12 + C11 R1 Z3 RF INPUT R3 Z5 Z7 C7 Z9 C21 C10 C9 C37 L5 Z11 B3 B4 C36 C35 C34 + VDD C33 Z13 C23 Z15 C25 L1 L3 C27 Z17 C29 RF OUTPUT C32 C1 Z1 C2 Z2 C3 C4 C5 DUT Z19 C22 R4 Z4 C6 R2 Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 ARCHIVE INFORMATION VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C9, C15, C32 270 pF, 100 mil Chip Capacitors C2, C3 7.5 pF, 100 mil Chip Capacitors C4 5.1 pF, 100 mil Chip Capacitor C5, C6 180 pF, 100 mil Chip Capacitors C7, C8 47 pF, 100 mil Chip Capacitors C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors C11, C17, C33, C38 10 μF, 50 V Electrolytic Capacitors C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors C14, C20, C36, C41 0.1 μF, 100 mil Chip Capacitors C21, C22 33 pF, 100 mil Chip Capacitors C23, C24 27 pF, 100 mil Chip Capacitors C25, C26 15 pF, 100 mil Chip Capacitors C27, C28 2.2 pF, 100 mil Chip Capacitors C29, C30 6.2 pF, 100 mil Chip Capacitors C31 1.0 pF, 100 mil Chip Capacitor L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board 1 Turn, #18 AWG, 0.085″ ID Inductors 2 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.240″ x 0.080″ Microstrip 0.185″ x 0.080″ Microstrip 1.500″ x 0.080″ Microstrip 0.150″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.150″ x 0.240″ Microstrip 0.270″ x 0.080″ Microstrip 0.680″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.380″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic MRF1570T1 MRF1570FT1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VGG C11 GND B1 C12 C13 C14 C2 C4 C3 C18 C19 C20 B2 C17 R2 C15 C42 C6 C10 C37 C9 R1 C5 C7 R3 R4 C8 C21 C23 C22 C24 L5 C25 C26 L6 L2 L4 L1 B3 B4 C33 VDD GND C1 C27 C34 C35 C36 L3 C29 C31 C30 C32 C28 C39 C40 C41 B5 B6 C38 MRF1570T1 ARCHIVE INFORMATION Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 400 - 470 MHz 100 80 60 440 MHz 40 20 VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 8 −20 0 10 20 30 40 50 400 MHz 470 MHz IRL, INPUT RETURN LOSS (dB) 0 VDD = 12.5 Vdc −5 Pout , OUTPUT POWER (WATTS) −10 440 MHz −15 400 MHz 470 MHz 60 70 80 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 13. Output Power versus Input Power Figure 14. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION C16 TYPICAL CHARACTERISTICS, 400 - 470 MHz 17 15 G ps , POWER GAIN (dB) 13 11 9 7 VDD = 12.5 Vdc 5 70 60 η, DRAIN EFFICIENCY (%) 400 MHz 440 MHz 470 MHz 50 40 30 20 10 80 0 0 10 20 30 40 50 VDD = 12.5 Vdc 400 MHz 470 MHz 440 MHz ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 15. Gain versus Output Power Figure 16. Drain Efficiency versus Output Power 90 100 80 60 40 20 0 400 80 470 MHz 440 MHz 400 MHz 470 MHz 400 MHz 440 MHz 70 60 VDD = 12.5 Vdc Pin = 38 dBm 600 800 1000 1200 1400 1600 VDD = 12.5 Vdc Pin = 38 dBm 600 800 1000 1200 1400 1600 50 400 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 17. Output Power versus Biasing Current Figure 18. Drain Efficiency versus Biasing Current 100 90 80 70 60 50 40 10 Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15 400 MHz 470 MHz 440 MHz η, DRAIN EFFICIENCY (%) 100 80 60 40 400 MHz 440 MHz 470 MHz Pout , OUTPUT POWER (WATTS) 20 0 10 Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 19. Output Power versus Supply Voltage Figure 20. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 0 10 20 30 40 50 60 70 60 70 80 Pout , OUTPUT POWER (WATTS) η, DRAIN EFFICIENCY (%) VGG C13 C12 C11 B1 + C10 R1 Z2 Z4 C2 C1 Z1 C4 R3 Z6 Z8 C6 DUT Z10 C20 C9 C8 C33 L3 Z12 B3 B4 C32 C31 C30 + VDD C29 Z14 Z16 C24 L1 Z18 C26 RF OUTPUT C28 RF INPUT C22 Z20 R4 Z3 C3 Z5 C5 R2 Z7 Z9 C7 Z11 C21 C23 Z13 L4 B5 C15 C14 C38 B6 C37 C36 C35 Z15 Z17 C25 L2 Z19 C27 ARCHIVE INFORMATION VGG C19 C18 C17 B2 + C16 + VDD C34 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C8, C14, C28 270 pF, 100 mil Chip Capacitors C2, C3 10 pF, 100 mil Chip Capacitors C4, C5 180 pF, 100 mil Chip Capacitors C6, C7 47 pF, 100 mil Chip Capacitors C9, C15, C33, C38 120 pF, 100 mil Chip Capacitors C10, C16, C29, C34 10 μF, 50 V Electrolytic Capacitors C11, C17, C30, C35 470 pF, 100 mil Chip Capacitors C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors C13, C19, C32, C37 0.1 μF, 100 mil Chip Capacitors C20, C21 22 pF, 100 mil Chip Capacitors C22, C23 20 pF, 100 mil Chip Capacitors C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors L1, L2 1 Turn, #18 AWG, 0.115″ ID Inductors L3, L4 2 Turn, #16 AWG, 0.165″ ID Inductors N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board Type N Flange Mounts 1.0 kΩ Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.40″ x 0.080″ Microstrip 0.26″ x 0.080″ Microstrip 1.35″ x 0.080″ Microstrip 0.17″ x 0.240″ Microstrip 0.12″ x 0.240″ Microstrip 0.14″ x 0.240″ Microstrip 0.15″ x 0.240″ Microstrip 0.18″ x 0.172″ Microstrip 1.23″ x 0.080″ Microstrip 0.12″ x 0.080″ Microstrip 0.40″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION VGG C10 GND B1 C13 C12 C11 C2 C8 R1 C9 C4 C6 R3 R4 C7 C20 C22 L3 C21 C23 L4 C33 C30 C31 C32 C24 L1 C26 B3 B4 C29 VDD GND C1 C28 C25 C27 L2 C35 C36 C37 C38 B5 B6 C34 MRF1570T1 C3 C19 C18 C17 C14 R2 C5 C15 ARCHIVE INFORMATION B2 C16 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 450 - 520 MHz 100 IRL, INPUT RETURN LOSS (dB) 80 60 40 20 VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 8 −25 0 10 20 30 40 50 60 0 −5 −10 470 MHz −15 −20 500 MHz 450 MHz 520 MHz VDD = 12.5 Vdc 70 80 90 Pout , OUTPUT POWER (WATTS) 470 MHz 450 MHz 520 MHz 500 MHz Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 23. Output Power versus Input Power Figure 24. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS, 450 - 520 MHz 15 14 G ps , POWER GAIN (dB) 13 12 11 450 MHz η, DRAIN EFFICIENCY (%) 470 MHz 500 MHz 520 MHz 70 60 50 470 MHz 40 30 VDD = 12.5 Vdc 20 10 500 MHz 520 MHz 450 MHz 10 9 VDD = 12.5 Vdc 0 10 20 30 40 50 60 70 80 90 20 30 40 50 60 ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 25. Gain versus Output Power Figure 26. Drain Efficiency versus Output Power 90 η, DRAIN EFFICIENCY (%) 80 80 450 MHz 470 MHz 70 520 MHz 60 500 MHz 470 MHz 50 450 MHz VDD = 12.5 Vdc Pin = 38 dBm 70 500 MHz 520 MHz 60 VDD = 12.5 Vdc Pin = 38 dBm 800 1200 1600 50 400 40 400 800 1200 1600 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 27. Output Power versus Biasing Current Figure 28. Drain Efficiency versus Biasing Current 100 90 η, DRAIN EFFICIENCY (%) 80 70 60 50 40 30 10 450 MHz 470 MHz 500 MHz 520 MHz Pin = 38 dBm IDQ = 800 mA 11 12 13 14 15 80 Pout , OUTPUT POWER (WATTS) 70 520 MHz 60 500 MHz 470 MHz 450 MHz 50 Pin = 38 dBm IDQ = 800 mA 40 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 29. Output Power versus Supply Voltage Figure 30. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION 70 80 90 Pout , OUTPUT POWER (WATTS) ZOL* f = 135 MHz f = 175 MHz f = 135 MHz Zin f = 175 MHz f = 400 MHz f = 470 MHz Zin f = 400 MHz ZOL* f = 470 MHz f = 520 MHz Zo = 5 Ω ZOL* f = 450 MHz f = 520 MHz Zo = 5 Ω f = 450 MHz Zin ARCHIVE INFORMATION VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 135 155 175 Zin Ω 2.8 +j0.05 3.9 +j0.34 2.4 - j0.47 ZOL* Ω 0.65 +j0.42 1.01 +j0.63 0.71 +j0.37 VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 400 440 470 Zin Ω 0.92 - j0.71 1.12 - j1.11 0.82 - j0.79 ZOL* Ω 1.05 - j1.10 0.83 - j1.45 0.59 - j1.43 VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz 450 470 500 520 Zin Ω 0.94 - j1.12 1.03 - j1.17 0.95 - j1.71 0.62 - j1.74 ZOL* Ω 0.61 - j1.14 0.62 - j1.12 0.75 - j1.03 0.77 - j0.97 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 31. Series Equivalent Input and Output Impedance MRF1570T1 MRF1570FT1 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. ARCHIVE INFORMATION Cds Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 13 ARCHIVE INFORMATION MOUNTING The specified maximum thermal resistance of 0.75°C/W assumes a majority of the 0.170″ x 0.608″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. ARCHIVE INFORMATION MRF1570T1 MRF1570FT1 14 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION NOTES MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 15 NOTES MRF1570T1 MRF1570FT1 16 RF Device Data Freescale Semiconductor NOTES MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 17 PACKAGE DIMENSIONS 2X aaa M P DAB A E1 B E2 DRAIN ID NOTE 6 5 b2 aaa 6 M 1 8 4X 2 DB (b1) 2X 7 b3 D D2 6 D1 4X 7 4X 3 e e1 4X b1 aaa M 8 DB 4 5 E C SEATING PLANE A E3 Y Y D SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH . 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSION D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS b1 AND b2 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE b1 AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 E E1 E2 E3 L P b1 b2 b3 c1 e e1 q aaa bbb INCHES MIN MAX 0.098 0.108 0.000 0.004 0.100 0.104 0.928 0.932 0.810 BSC 0.608 BSC 0.296 0.304 0.248 0.252 0.170 BSC 0.241 0.245 0.060 0.070 0.126 0.134 0.088 0.094 0.066 0.072 0.067 0.073 0.007 0.011 0.104 BSC 0.210 BSC 0_ 6_ 0.004 0.008 MILLIMETERS MIN MAX 2.49 2.74 0.00 0.10 2.54 2.64 23.57 23.67 20.57 BSC 15.44 BSC 7.52 7.72 6.30 6.40 4.32 BSC 6.12 6.22 1.52 1.78 3.20 3.40 2.24 2.39 1.68 1.83 1.70 1.85 0.178 0.279 2.64 BSC 5.33 BSC 0_ 6_ 0.10 0.20 L q A1 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) A2 DATUM PLANE H c1 CASE 1366 - 04 ISSUE D TO - 272- 8 WRAP PLASTIC MRF1570T1 MRF1570T1 MRF1570FT1 18 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ E3 VIEW Y - Y 4 3 bbb C A B 2 1 RF Device Data Freescale Semiconductor aaa M P DAB 2X A E1 B E2 aaa 3X M DB DRAIN ID b 5 e2 4X 3X 1 2X 8 (b1) D 4X D1 b2 aaa M D B 6 2 b3 7 D2 e 7 4X 3 e1 4X 6 aaa M b1 DB 8 4 b4 5 bbb C A B 4X E c1 A D SEATING PLANE Y ZONE "J" F Y A1 6 A2 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 4. DIMENSIONS "b" AND "b1" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE "b1" AND "b2" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 5. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 6. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. DIM A A1 A2 D D1 D2 E E1 E2 F P b b1 b2 b3 b4 c1 e e1 e2 aaa bbb INCHES MIN MAX 0.098 0.106 0.038 0.044 0.040 0.042 0.926 0.934 0.810 BSC 0.608 BSC 0.492 0.500 0.246 0.254 0.170 BSC 0.025 BSC 0.126 0.134 0.105 0.111 0.088 0.094 0.066 0.072 0.067 0.073 0.077 0.083 0.007 0.011 0.104 BSC 0.210 BSC 0.229 BSC 0.004 0.008 CASE 1366A - 02 ISSUE C TO - 272- 8 PLASTIC MRF1570FT1 RF Device Data Freescale Semiconductor ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ VIEW Y - Y MILLIMETERS MIN MAX 2.49 2.69 0.96 1.12 1.02 1.07 23.52 23.72 20.57 BSC 15.44 BSC 12.50 12.70 6.25 6.45 4.32 BSC 0.64 BSC 3.20 3.40 2.67 2.82 2.24 2.39 1.68 1.83 1.70 1.85 1.96 2.11 0.178 0.279 2.64 BSC 5.33 BSC 5.82 BSC 0.10 0.20 NOTE 5 4 3 2 1 MRF1570T1 MRF1570FT1 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1570T1 MRF1570FT1 2Rev. 6, 5/2006 0 Document Number: MRF1570T1 RF Device Data Freescale Semiconductor