MRF18060ALR3_08

Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 11, 10/2008 N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical GSM Performance @ 1805 MHz Power Gain — 13 dB @ 60 Watts Efficiency — 45% @ 60 Watts • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18060ALR3 1805 - 1880 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465 - 06, STYLE 1 NI - 780 Table 1. Maximum Ratings Rating Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.97 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF18060ALR3 1 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor LIFETIME BUY Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) 2 2.5 — — 3.9 0.27 4 4.5 — Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 6 1 Vdc μAdc μAdc Symbol Min Typ Max Unit Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Common - Source Amplifier Power Gain @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) Drain Efficiency @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 MHz) 1. Part is internally matched both on input and output. Ciss Coss Crss — — — 160 740 2.7 — — — pF pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) Gps η IRL 11.5 43 — 13 45 — — — - 10 dB % dB MRF18060ALR3 2 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY R2 R1 T1 R3 Z6 VSUPPLY C4 + C3 VBIAS C1 R4 C2 R5 Z4 Z5 C7 Z7 RF OUTPUT RF INPUT Z1 C5 Z2 C6 Z3 DUT C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 kΩ Chip Resistors (0805) 2.7 kΩ Chip Resistors (0805) 1.1 kΩ Chip Resistor (0805) BC847 Transistor SOT - 23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47″ x 0.09″ 1.16″ x 0.09″ 0.57″ x 0.95″ 0.59″ x 1.18″ 1.26″ x 0.15″ 1.15″ x 0.09″ 0.37″ x 0.09″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2 R1 T1 R3 C1 R4 C2 R5 C3 C4 VSUPPLY C7 C6 C5 Ground MRF18060 Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18060ALR3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY VBIAS C1 T1 R1 R2 R5 VSUPPLY C2 C4 + R3 T2 R4 R6 RF INPUT C3 C5 Z1 C6 Z2 C7 Z3 Z6 Z4 Z5 C8 Z7 RF OUTPUT C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass, εr = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic MRF18060ALR3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY ÎÎÎ ÎÎÎ ÎÎÎ VBIAS Ground VSUPPLY R1 R2 R3 R4 C4 T1 C7 C8 C6 LIFETIME BUY MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1800 - 2000 MHz Demo Board Component Layout RF Device Data Freescale Semiconductor Î ÎÎÎ ÎÎÎ Î Î ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ Î T2 R5 C1 C2 C3 R6 MRF18060 C5 MRF18060ALR3 5 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 ÎÎ ÎÎÎ Î ÎÎÎ Î ÎÎÎ ÎÎ ÎÎÎ Î ÎÎ TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) 16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 500 mA 12 11 300 mA 10 9 8 1 10 Pout, OUTPUT POWER (WATTS) 100 100 mA VDD = 26 Vdc f = 1880 MHz IDQ = 750 mA 100 80 70 60 50 40 30 20 10 0 18 20 Pin = 5 W 2.5 W 1W VDD = 26 Vdc IDQ = 500 mA 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 LIFETIME BUY Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage 90 80 70 3W 60 50 40 30 20 10 0 1800 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz h Pout 60 55 50 45 40 35 30 25 20 15 Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 −2 Gps −4 −6 −8 −10 −12 −14 IRL VDD = 26 Vdc IDQ = 500 mA 2000 2100 −16 −18 −20 IRL, INPUT RETURN LOSS (dB) 15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 1700 1800 1900 f, FREQUENCY (MHz) Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060ALR3 6 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 90 Pout , OUTPUT POWER (WATTS) η, DRAIN EFFICIENCY (%) Zo = 5 Ω Zload f = 1700 MHz f = 2100 MHz f = 1700 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz 1700 1800 1900 2000 2100 Zsource Ω 0.60 - j2.53 0.80 - j3.20 0.92 - j3.42 1.07 - j3.59 1.31 - j4.00 Zload Ω 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF18060ALR3 RF Device Data Freescale Semiconductor 7 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF18060ALR3 MRF18060ALR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 11 Date Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Added Product Documentation and Revision History, p. 9 MRF18060ALR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF18060ALR3 1Rev. 11, 10/2008 0 Document Number: MRF18060A RF Device Data Freescale Semiconductor