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MRF18060BLR3

MRF18060BLR3

  • 厂商:

    FREESCALE(飞思卡尔)

  • 封装:

  • 描述:

    MRF18060BLR3 - RF Power Field Effect Transistor - Freescale Semiconductor, Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
MRF18060BLR3 数据手册
Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts CW Efficiency — 45% (Typ) @ 60 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF18060BLR3 MRF18060BLSR3 1930- 1990 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18060BLR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18060BLSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.97 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18060BLR3 MRF18060BLSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 60 W(2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) Gps η IRL — — - 10 dB 11.5 40 13 45 — % — dB Ciss Coss Crss — — — 160 740 2.7 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 2 2.5 — — 3.9 0.27 4 4.5 — Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 6 1 Vdc μAdc μAdc Symbol Min Typ Max Unit 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch- to - batch consistency. MRF18060BLR3 MRF18060BLSR3 2 RF Device Data Freescale Semiconductor Z5 VSUPPLY VBIAS R1 R2 C1 R3 RF INPUT C9 Z1 C4 Z2 C5 Z3 DUT C7 Z4 C6 Z6 C8 Z7 C3 + C2 RF OUTPUT C1, C3 C2 C4, C8 C5 C6 C7, C9 R1, R2 R3 10 pF, 100B Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitors 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor 0.3 pF, 100B Chip Capacitors 10 kΩ Chip Resistors (0805) 1.0 kΩ Chip Resistor (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.60″ x 0.09″ Microstrip 1.00″ x 0.09″ Microstrip 0.51″ x 0.94″ Microstrip 0.59″ x 0.98″ Microstrip 0.79″ x 0.09″ Microstrip 1.38″ x 0.09″ Microstrip 0.79″ x 0.09″ Microstrip Teflon® Glass Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS R1 C1 R2 C9 C4 R3 C6 C5 C2 VSUPPLY C3 C7 C8 Ground MRF18060 Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 3 VBIAS C1 R3 T2 R4 R6 RF INPUT C3 MRF18060BLR3 MRF18060BLSR3 4 RF Device Data Freescale Semiconductor ÎÎÎ ÎÎÎ ÎÎÎ T1 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 R1 R2 R5 VSUPPLY C2 C4 + C5 Z1 C6 Z2 C7 Z3 Z6 Z4 Z5 C8 Z7 RF OUTPUT 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass, εr = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic VBIAS Ground VSUPPLY R1 R2 R3 R4 C4 T1 T2 C7 C8 C6 MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 5 Î ÎÎÎ ÎÎ Î Î Î ÎÎÎ ÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ Î R5 C2 C3 R6 MRF18060 C5 C1 Î ÎÎ ÎÎÎ Î ÎÎÎ Î ÎÎÎ ÎÎÎ Î ÎÎ ÎÎ TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) 16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 500 mA 12 11 300 mA 10 9 8 1 10 Pout, OUTPUT POWER (WATTS) 100 100 mA VDD = 26 Vdc f = 1880 MHz IDQ = 750 mA 100 90 80 70 60 50 40 30 20 10 0 18 20 VDD = 26 Vdc IDQ = 500 mA 22 26 24 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 1W 2.5 W Pin = 5 W Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage 90 Pout , OUTPUT POWER (WATTS) 80 70 3W 60 50 40 30 20 10 0 1800 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 30 20 10 0 0 1 3 4 2 Pin, INPUT POWER (WATTS) 5 6 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz h Pout 60 55 η, DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 −2 IRL, INPUT RETURN LOSS (dB) Gps −4 −6 −8 −10 −12 −14 IRL VDD = 26 Vdc IDQ = 500 mA 2000 2100 −16 −18 −20 15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 1700 1800 1900 f, FREQUENCY (MHz) Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060BLR3 MRF18060BLSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 1700 MHz f = 1700 MHz f = 2100 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz 1700 1800 1900 2000 2100 Zsource Ω 0.60 - j2.53 0.80 - j3.20 0.92 - j3.42 1.07 - j3.59 1.31 - j4.00 Zload Ω 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF18060BLR3 MRF18060BLSR3 8 RF Device Data Freescale Semiconductor NOTES MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF18060BLR3 MRF18060BLSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF18060BLR3 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF18060BLSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF18060BLR3 MRF18060BLSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18060BLR3 MRF18060BLSR3 1Rev. 8, 5/2006 2 Document Number: MRF18060B RF Device Data Freescale Semiconductor
MRF18060BLR3
物料型号:LTC6810HN 器件简介:LTC6810HN 是一款多节电池监控器,可测量多达12节电池电压,具有堆叠通信功能,支持通过单个通信端口监控多个电池栈。

引脚分配:LTC6810HN 有多种引脚配置以支持不同的监控需求,包括电源引脚、通信引脚和电池监视引脚。

参数特性:该芯片支持高达 12 位的电压测量分辨率,通信速率可达 1.25 MHz,具有低噪声放大器和高共模抑制比。

功能详解:LTC6810HN 能够实现电池电压和温度的实时监控,具有故障检测和诊断功能,支持软件配置和远程控制。

应用信息:适用于电动汽车、太阳能储能系统、电信基站和不间断电源系统等。

封装信息:LTC6810HN 提供多种封装选项,包括 QFN 和 DFN 封装,以适应不同的应用和空间要求。
MRF18060BLR3 价格&库存

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