MRF18090BSR3

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090BR3 MRF18090BSR3 1.90 - 1.99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3 CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18090BR3 MRF18090BSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) Common- Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) Gps η IRL — — - 10 dB 12 40 13.5 45 — % — dB Crss — 4.2 — pF VGS(Q) VDS(on) gfs 2.5 — — 3.7 0.1 7.2 4.5 — — Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit 1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch consistency. MRF18090BR3 MRF18090BSR3 2 RF Device Data Freescale Semiconductor R1 R2 T1 Z8 VDD C3 C4 + C5 R3 VGG R5 R4 C1 C2 R6 Z7 Z9 C7 Z10 RF OUTPUT RF INPUT Z3 Z1 Z2 Z4 C6 Z5 Z6 DUT C1 C2 C3, C4 C5 C6, C7 R1 R2, R3, R6 R4 R5 T1 Z1 1.0 mF Chip Capacitor (0805) 1.0 nF Chip Capacitor (0805) 6.8 pF, 100B Chip Capacitors 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitors 2.2 kW Chip Resistor (0805) 1.0 kW Chip Resistors (0805) 10 kΩ Chip Resistor (0805) 6.8 kΩ Chip Resistor (0805) BC847 SOT - 23 0.85″ x 0.09″ Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB Printed Inductance Printed Inductance (Butterfly) 0.70″ x 0.09″ Microstrip 0.36″ x 0.09″ Microstrip 0.21″ x 1.25″ Microstrip 0.45″ x 1.18″ Microstrip 1.37″ x 0.05″ Microstrip 0.39″ x 0.09″ Microstrip 1.25″ x 0.09″ Microstrip Teflon® Glass Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic C5 VBIAS R1 R3 R5 R2 T1 R4 R6 C1 C2 C3 C4 VSUPPLY C6 C7 Ground MRF18090B Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 3 T1 C1 C2 R3 T2 R4 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 R1 R2, R3 R4 C8 C9 C10 MRF18090B Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout MRF18090BR3 MRF18090BSR3 4 RF Device Data Freescale Semiconductor Ï Ï ÏÏ ÏÏ Ï Ï ÏÏÏ ÏÏÏ ÏÏ Ï Ï ÏÏ ÏÏ ÏÏ Ï ÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏ ÏÏÏ ÏÏ ÏÏÏ ÏÏÏ ÏÏÏ T1 R1 R2 R6 C5 R5 + VSUPPLY C3 C6 C4 C7 RF INPUT C9 Z1 C8 C10 Z4 Z2 Z3 RF OUTPUT 1 mF Chip Capacitors (0805) 0.1 mF Chip Capacitor (0805) 1 nF Chip Capacitor (0805) 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitors 22 pF, 100A Chip Capacitors 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 2.2 kΩ Chip Resistor (0805) R5 10 kΩ Chip Resistor (0603) R6 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.491″ x 0.110″ Microstrip Z2 0.756″ x 1.260″ Microstrip Z3 1.433″ x 1.260″ Microstrip Z4 0.567″ x 0.110″ Microstrip Substrate = 0.5 mm Teflon® Glass Figure 3. 1.93 - 1.99 GHz Demo Board Schematic VSUPPLY Ground C1 R1 T 1 R2 R3 C2 C5 R4 T2 R6 C4 R5 C3 C6 C7 MRF18090B TYPICAL CHARACTERISTICS 16 IDQ = 1000 mA 750 mA Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 12 300 mA 11 10 0.1 1 100 10 Pout, OUTPUT POWER (WATTS) 1000 VDD = 26 Vdc f = 1990 MHz 500 mA 140 120 100 80 60 40 20 0 12 14 16 22 26 18 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 28 30 32 2W IDQ = 750 mA f = 1990 MHz Pin = 5 W 1W Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Supply Voltage 120 Pin = 5 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 100 80 60 40 1W 20 0 1.91 1.93 1.95 1.97 f, FREQUENCY (GHz) 1.99 2.01 2W VDD = 26 Vdc IDQ = 750 mA 120 h 100 Pout 80 60 40 20 0 0 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 VDD = 26 Vdc IDQ = 750 mA f = 1990 MHz 60 50 40 30 20 10 0 η, DRAIN EFFICIENCY (%) Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 Gps 16 14 G ps, POWER GAIN (dB) 12 IRL 10 −10 −15 8 6 1.88 1.90 1.92 1.96 1.98 1.94 f, FREQUENCY (GHz) VDD = 26 Vdc IDQ = 750 mA 2.00 2.02 2.04 −20 −25 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) −5 f = 1805 MHz Zload Zo = 10 Ω f = 1990 MHz f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz 1805 1880 1930 1990 Zsource Ω 1.10 - j5.85 1.56 - j6.75 2.05 - j8.00 2.30 - j7.30 Zload Ω 1.15 - j2.16 1.13 - j2.60 1.30 - j2.23 0.82 - j2.90 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Large Signal Source and Load Impedance MRF18090BR3 MRF18090BSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M R M bbb ccc H C E A (FLANGE) M (LID) M (INSULATOR) M ccc (INSULATOR) M TA M B S TA TA M B B M N M M M aaa (LID) M TA M B F DIM A B C D E F G H K M N Q R S aaa bbb ccc T A SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF18090BR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M (INSULATOR) R ccc aaa M (LID) M (INSULATOR) M M bbb ccc H C E A (FLANGE) M TA TA M B S B TA TA M B B M N M M M (LID) M M DIM A B C D E F H K M N R S aaa bbb ccc F STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF18090BSR3 MRF18090BR3 MRF18090BSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18090BR3 MRF18090BSR3 8Rev. 7, 5/2006 Document Number: MRF18090B RF Device Data Freescale Semiconductor