MRF19045LSR3

Freescale Semiconductor Technical Data Document Number: MRF19045 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi- carrier IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.5% Adjacent Channel Power — 885 kHz: - 50 dBc @ 30 kHz BW IM3 — - 37 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF19045LR3 MRF19045LSR3 1930- 1990 MHz, 45 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF19045LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19045LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 105 0.60 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 1.65 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19045LR3 MRF19045LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.8 — pF VGS(th) VGS(Q) VDS(on) gfs 2 3 — — — 3.8 0.19 4.2 4 5 0.21 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in 1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth. Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth Centered at f1 - 2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier Channel Power) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith Centered at f1 - 885 kHz and f2 +885 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz) 1. Part is internally matched both on input and output. Gps 13 14.5 — dB η 21 23.5 — % IM3 — - 37 - 35 dBc ACPR — - 51 - 45 dBc IRL — - 16 -9 dB P1dB — 45 — W MRF19045LR3 MRF19045LSR3 2 RF Device Data Freescale Semiconductor R2 VBIAS + C1 + C2 C3 R1 B1 R3 W1 Z4 C4 C6 Z8 C7 C8 R4 W2 + C9 + R5 B2 B2 C10 C11 VSUPPLY + C12 Z3 Z6 RF INPUT Z7 Z9 Z10 C13 Z11 RF OUTPUT Z1 C5 Z2 Z5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 1.336″ x 0.081″ Microstrip 0.693″ x 0.081″ Microstrip 1.033″ x 0.047″ Microstrip 0.468″ x 0.047″ Microstrip 0.271″ x 0.460″ Microstrip 0.263″ x 0.930″ Microstrip 1.165″ x 0.047″ Microstrip Z8 Z9 Z10 Z11 PCB 0.216″ x 0.047″ Microstrip 0.519″ x 0.254″ Microstrip 0.874″ x 0.081″ Microstrip 0.645″ x 0.081″ Microstrip Arlon GX0300-55-22, 30 mils, εr = 2.55 NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″. Zx lengths are microstrip lengths between components, center-line to center-line. All component and z-length tolerances are ±0.015″, except as noted. Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 5. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Designators B1, B2 C1, C2 C3, C11 C4, C8 C5 C6, C7 C9, C10, C12 C13 R1 R2, R3, R4, R5 W1, W2 WS1, WS2 Description 0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, ATC #100B240JP500X 470 pF Chip Capacitor, ATC #100B471JP200X 11 pF Chip Capacitors, ATC #100B110JP500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 8.2 pF Chip Capacitor, ATC #100B8R2CP500X 560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″) 8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 3 C1 R1 B1 R2 C3 C5 C4 W1 R3 C6 C7 C8 W2 R4 C9 C10 C12 B2 R5 C11 C2 WS1 WS2 C13 MRF19045/S Rev - 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045LR3 MRF19045LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 2 3 4 5 6 7 8 9 10 11 12 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz −30 −35 IM3 η ACPR Gps −55 −60 −65 −70 −40 IM3 (dBc), ACPR (dBc) −45 −50 35 30 25 η −30 IM3 −40 Gps −50 ACPR 5 1900 1930 1960 1990 2020 f, FREQUENCY (MHz) −60 20 15 10 VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing 1.2288 MHz Source Channel Bandwidth 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) IRL 0 IM3 (dBc), ACPR (dBc), IRL (dB) −10 −20 Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power −30 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 350 mA 450 mA −45 550 mA 700 mA −50 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) 0 1 2 3 4 5 6 7 8 9 10 11 12 Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −45 −50 VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 350 mA 450 mA −60 700 mA −65 550 mA 0 1 2 3 4 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 5 6 7 8 9 10 11 12 −35 −40 −55 −55 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) −70 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) Figure 5. 2-Carrier N-CDMA IM3 versus Output Power η, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (WATTS CW) 15.5 700 mA 15.0 G ps , POWER GAIN (dB) 550 mA 450 mA 14.5 350 mA VDD = 26 Vdc, IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 14.0 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 0 1 2 3 4 5 6 7 8 9 10 11 12 70 60 50 40 30 20 10 0 0.0 0.5 Figure 6. 2-Carrier N-CDMA ACPR versus Output Power 17 P 1dB P out P 3dB η G ps , POWER GAIN (dB) 15 14 13 Gps VDD = 26 Vdc IDQ = 550 mA f = 1960 MHz 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 12 11 10 Pin, INPUT POWER (WATTS CW) 16 13.5 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 IMD 5 0 0.1 η 1.0 10 100 −60 −65 Gps VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz −25 −30 −35 −40 −45 −50 −55 IMD, INTERMODULATION DISTORTION (dBc) 40 η 35 30 25 20 15 10 5 1900 G ps IMD IRL VDD = 26 Vdc IDQ = 450 mA 100 kHz Tone Spacing 0 −5 −10 −15 −20 −25 −30 −35 2020 IMD, INTERMODULATION DISTORTION (dBc), IRL (dB) 7.5 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 1930 1960 f, FREQUENCY (MHz) 1990 Pout, OUTPUT POWER (WATTS PEP) Figure 9. CW Two-Tone Power Gain, IMD and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0.1 1.0 10 100 450 mA 550 mA VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz 350 mA Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency 16.0 15.5 G ps , POWER GAIN (dB) 700 mA 15.0 550 mA 14.5 450 mA 14.0 13.5 350 mA 13.0 0.1 1.0 VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz 10 100 700 mA Pout, OUTPUT POWER (WATTS PEP) Pout, OUTPUT POWER (WATTS PEP) Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −30 −40 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz Figure 12. CW Two-Tone Power Gain versus Output Power 0 −10 −20 −30 −IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW −50 −60 −70 −80 −90 0.1 3rd Order (dB) 5th Order 7th Order −40 −50 −60 −70 −80 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW 1.0 10 100 −90 −100 −7.5 Pout, OUTPUT POWER (WATTS PEP) Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045LR3 MRF19045LSR3 6 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum RF Device Data Freescale Semiconductor Zo = 25 Ω f = 1990 MHz Zload f = 1930 MHz Zsource f = 1930 MHz f = 1990 MHz VDD = 26 V, IDQ = 550 mA, Pout = 9.5 W Avg. f MHz 1930 1960 1990 Zsource Ω 15.52 - j16.5 14.24 - j14.44 11.11 - j13.01 Zload Ω 4.52 - j1.86 3.85 - j1.04 3.44 - j0.69 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF19045LR3 MRF19045LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF19045LR3 MRF19045LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF19045LR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF19045LSR3 MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19045LR3 MRF19045LSR3 1Rev. 8, 5/2006 2 Document Number: MRF19045 RF Device Data Freescale Semiconductor