MRF19085LSR3

Freescale Semiconductor Technical Data Document Number: MRF19085 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 13.0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF19085LR3 MRF19085LSR3 1930- 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19085LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 273 1.56 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.79 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19085LR3 MRF19085LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 3.6 — pF VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — — 3.5 0.18 6 4 4.5 0.210 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 1. Part is internally matched both on input and output. (continued) Gps 12 13 — dB η 21 23 — % IMD — - 36.5 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 12 -9 dB MRF19085LR3 MRF19085LSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz) Gps — 13 — dB Symbol Min Typ Max Unit η — 36 — % IMD — - 31 — dBc IRL — - 12 — dB P1dB — 90 — W MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 3 VBIAS R1 R3 B1 + C5 C4 C3 C2 C7 + C8 L1 C9 C10 + C11 + C12 VSUPPLY R2 Z4 RF INPUT Z9 RF OUTPUT Z1 C1 Z2 Z3 DUT Z5 Z6 Z7 C6 Z8 Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic Table 5. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values Part B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Description Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 0.1 μF Tantalum Surface Mount Capacitor 10 pF Chip Capacitor 10 μF Tantalum Surface Mount Capacitor 22 μF Tantalum Surface Mount Capacitors 1 Turn, 20 AWG, 0.100″ ID Type N Flange Mounts 1.0 kΩ, 1/8 W Chip Resistor 220 kΩ, 1/8 W Chip Resistor 10 Ω, 1/8 W Chip Resistor Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip 0.030″ Glass Teflon® Etched Circuit Boards 0.750″ x 0.0840″ 1.090″ x 0.0840″ 0.400″ x 1.400″ 0.520″ x 0.050″ 0.540″ x 1.133″ 0.400″ x 0.140″ 0.555″ x 0.0840″ 0.720″ x 0.0840″ 0.560″ x 0.070″ GX-0300-55-22, εr = 2.55 MRF19085 Rev. 4 Keene CMR 3052-1648-10 Omni Spectra Part Number 2743019447 100B510JCA500X 100B5R1JCA500X 100B102JCA500X CDR33BX104AKWS T491C105M050 100B100JCA500X T495X106K035AS4394 T491X226K035AS4394 ATC ATC ATC Kemet Kemet ATC Kemet Kemet Manufacturer Fair Rite MRF19085LR3 MRF19085LSR3 4 RF Device Data Freescale Semiconductor C8 C2 R1 B1 C7 L1 C9 R2 C5 C4 C3 CUT OUT AREA C11 C12 C6 R3 C10 C1 MRF19085 Rev.4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 0 −10 −20 −30 −40 (dB) −50 −60 −70 −80 −90 −100 −7.5 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 1.2288 MHz Channel BW 30 25 20 IM3 15 10 5 ACPR 0 0.5 1 10 Pout, OUTPUT POWER (WATTS Avg.) N−CDMA −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) 30 −70 G ps η −49 −56 −63 VDD = 26 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) −28 −35 −42 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%) Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 3. 2-Carrier N-CDMA Spectrum −20 VDD = 26 Vdc IDQ = 850 mA f1 = 1960 MHz 100 kHz Tone Spacing 50 η, DRAIN EFFICIENCY (%) IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 −45 −50 850 mA −70 4 10 Pout, OUTPUT POWER (WATTS) PEP 0 100 −55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 550 mA 700 mA 1150 mA 1000 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing −30 40 −40 η −50 3rd Order 5th Order −60 7th Order 30 20 10 Figure 5. Intermodulation Distortion Products versus Output Power IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 η 22 20 18 16 14 12 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA IM3 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) −40 ACPR G ps 1980 −50 −60 1990 IRL −10 −20 −30 0 14 12 10 8 6 Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ 54 G ps VDD = 26 V IDQ = 850 mA f = 1960 MHz 47 40 33 26 η 4 2 0 2 10 Pout, OUTPUT POWER (WATTS) P in 19 12 5 100 140 Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance MRF19085LR3 MRF19085LSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 39 38 η, DRAIN EFFICIENCY (%) 37 IMD 36 35 34 33 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 VDD, DRAIN SUPPLY (V) −29 −30 −31 −32 28.0 η IDQ = 850 mA f = 1960 MHz 100 kHz Tone Spacing −26 −27 −28 14.0 IDQ = 1150 mA G ps , POWER GAIN (dB) 13.5 1000 mA 850 mA 13.0 700 mA 12.5 550 mA 12.0 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) 100 11.5 Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply Figure 10. Two-Tone Power Gain versus Output Power G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) η 35 30 25 20 15 10 1920 1930 1940 1950 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 850 mA 100 kHz Tone Spacing IMD Gps 1960 1970 1980 1990 IRL −10 −15 −20 −25 −30 −35 2000 f, FREQUENCY (MHz) Figure 11. Two-Tone Broadband Performance MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 7 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 −5 f = 1990 MHz Zload f = 1930 MHz Zo = 5 Ω f = 1990 MHz Zsource f = 1930 MHz VDD = 26 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz 1930 1960 1990 Zsource Ω 0.75 - j2.50 0.70 - j2.40 0.65 - j2.35 Zload Ω 1.05 - j1.95 1.10 - j1.85 1.05 - j1.75 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF19085LR3 MRF19085LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF19085LR3 MRF19085LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF19085LR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF19085LSR3 MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19085LR3 MRF19085LSR3 1Rev. 8, 5/2006 2 Document Number: MRF19085 RF Device Data Freescale Semiconductor