MRF19090

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Avg. Power Gain — 10 dB Adjacent Channel Power — 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090R3 MRF19090SR3 1930- 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF19090R3 CASE 465C - 02, STYLE 1 NI - 880S MRF19090SR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 270 1.54 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.65 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19090R3 MRF19090SR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) 1. Part is internally matched both on input and output. Gps 10 11.5 — dB Crss — 4.2 — pF gfs VGS(th) VGS(Q) VDS(on) — 2.0 2.5 — 7.2 — 3.8 0.10 — 4.0 4.5 — S Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit η 33 35 — % IMD — - 30 - 28 dBc IRL — - 12 — dB P1dB — 90 — W MRF19090R3 MRF19090SR3 2 RF Device Data Freescale Semiconductor VBIAS + B1 + C13 + C14 + C19 C9 B3 B4 + + C16 + C17 B2 VSUPPLY + C10 C8 C7 C5 C6 C11 C12 C15 L1 R1 L2 RF INPUT Z1 Z2 C2 C1 Z3 Z4 Z5 DUT Z6 Z7 C3 C4 Z8 Z9 RF OUTPUT R2 C18 B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 2 Ferrite Beads, Round, Ferroxcube #56- 590- 65- 3B Ferrite Beads, Surface Mount, Ferroxcube 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27285 10 pF Chip Capacitors, ATC #100B100CCA500X 12 pF Chip Capacitor, ATC #100B120CCA500X 0.3 pF Chip Capacitor, ATC #100B0R3CCA500X 120 pF Chip Capacitors, ATC #100B12R1CCA500X 0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS 1000 pF Chip Capacitors, ATC #100B102JCA50X 22 μF, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 10 μF, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AS4394 1 μF, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AS4394 8 Turns, #26 AWG, 0.085″ OD, 0.330″ Long, Copper Wire R1, R2 270 Ω, 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030″ Glass Teflon®, εr = 2.55, 2 oz Copper, 3″ x 5″ Dimensions L1, L2 Figure 1. MRF19090 Test Circuit Schematic MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor 3 C9 RFB1 C19 C13 C14 C10 RFB2 RFB3 C11 C12 RFB4 C7 C8 L2 L1 R1 C2 CUTOUT R2 C3 C4 C6 C5 C15 C16 C17 C1 C18 0.14λ 0.212λ MRF19090 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19090 Test Circuit Component Layout MRF19090R3 MRF19090SR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 η 35 IRL 30 25 20 IMD 15 Gps 10 1900 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 −35 2020 −30 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 750 mA 100 kHz Tone Spacing −15 −10 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 885 kHz 2.25 MHz 20 1.25 MHz 15 η 9 Channel Forward Pilot:0, Paging:1, Traffic:8−13, Sync:32 Gps 10 0 5 15 10 20 25 Pout, OUTPUT POWER (WATTS (Avg.)) 30 −80 35 −60 −30 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 −40 −20 25 −50 −25 −70 Figure 3. Class AB Performance versus Frequency Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power −20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −25 −30 550 mA −35 −40 −45 950 mA −50 −55 750 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing −20 VDD = 26 Vdc IDQ = 750 mA f = 1960 MHz 100 kHz Tone Spacing −30 −40 3rd Order −50 5th Order −60 7th Order −70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. Intermodulation Products versus Output Power 13 12.5 G ps , POWER GAIN (dB) 12 750 mA G ps , POWER GAIN (dB) 950 mA 12.5 Pout = 90 W (PEP) IDQ = 750 mA, f = 1960 MHz 100 kHz Tone Spacing 12 Gps 11.5 IMD 11 −22 −24 −26 −28 −30 −32 −34 −36 11.5 11 550 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 10.5 10 10.5 22 24 26 28 30 −38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor 5 Zo = 10 Ω Zsource Zload f = 1990 MHz f = 1930 MHz 1990 MHz 1930 MHz VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP) f MHz 1930 1960 1990 Zsource Ω 4.5 - j6.1 4.4 - j6.0 4.3 - j6.1 Zload Ω 1.1 - j4.5 1.1 - j4.4 1.1 - j4.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF19090R3 MRF19090SR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF19090R3 B 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF (FLANGE) B K D TA 2 bbb M M B M (INSULATOR) M bbb ccc H C M R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF19090SR3 MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19090R3 MRF19090SR3 8Rev. 6, 5/2006 Document Number: MRF19090 RF Device Data Freescale Semiconductor