MRF21060

Freescale Semiconductor Technical Data Document Number: MRF21060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 12.5 dB Drain Efficiency — 15% ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF21060LR3 MRF21060LSR3 2110 - 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 0.98 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 1.02 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21060LR3 MRF21060LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) 1. Part is internally matched both on input and output. Gps 11 12.5 — dB Crss — 2.7 — pF VGS(th) VGS(Q) VDS(on) 2 2.5 — — 3.9 0.27 4 4.5 — Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 6 1 Vdc μAdc μAdc Symbol Min Typ Max Unit η 31 34 — % IMD — - 30 - 28 dBc IRL — - 12 — dB P1dB — 60 — W MRF21060LR3 MRF21060LSR3 2 RF Device Data Freescale Semiconductor R4 VGG + + C1 R2 C2 C3 C4 C5 R1 R3 + C6 C7 C8 B2 B3 VDD + Z8 Z9 Z10 RF INPUT Z1 C9 C10 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 C11 C12 Z15 RF OUTPUT DUT B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 Ferrite Beads, Fair Rite #2743019447 10 μF, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 μF Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 μF, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.743″ x 0.080″ Microstrip 0.070″ x 0.100″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180″ x 0.100″ Microstrip 0.152″ x 0.293″ Microstrip 0.216″ x 0.100″ Microstrip 0.114″ x 0.410″ Microstrip 0.626″ x 0.872″ Microstrip 1.050″ x 0.050″ Microstrip 0.830″ x 0.050″ Microstrip 0.596″ x 1.040″ Microstrip 0.186″ x 0.315″ Microstrip 0.097″ x 0.525″ Microstrip 0.353″ x 0.138″ Microstrip 0.112″ x 0.080″ Microstrip 0.722″ x 0.080″ Microstrip 0.030″ Glass Teflon®, Arlon GX - 0300- 55- 22, 2 oz Cu Figure 1. MRF21060L Test Circuit Schematic MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 3 TO GATE BIAS FEEDTHRU C1 R1 C2 C3 C4 R2 R3 C5 C6 R4 C7 C8 B2 B3 TO DRAIN BIAS FEEDTHRU C9 C11 C10 C12 MRF21060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21060L Test Circuit Component Layout MRF21060LR3 MRF21060LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 IRL VDD = 28 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two−Tone Measurement, 100 kHz Tone Spacing Gps IMD −35 −40 2200 η 0 −5 −10 −15 −20 −25 −30 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH −20 −25 −30 −35 −40 ACPR η Gps −45 −50 −55 2 10 4 8 12 6 14 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −60 16 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 Figure 3. Class AB Broadband Circuit Performance Figure 4. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power −25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −30 −35 −40 900 mA −45 −50 −55 −60 −65 0.1 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 500 mA 700 mA VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing −20 −30 −40 3rd Order −50 −60 −70 −80 0.1 5th Order 7th Order VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 14 900 mA G ps , POWER GAIN (dB) 13 G ps , POWER GAIN (dB) 700 mA 12 500 mA 11 14 Pout = 60 W (PEP), IDQ = 500 mA f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing IMD 13 Gps 12.5 −22 −24 −26 −28 −30 −32 −34 −36 13.5 VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 100 10 0.1 12 22 24 26 28 30 −38 32 Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 5 f = 2110 MHz Zsource f = 2110 MHz 2170 MHz Zload 2170 MHz Zo = 5 Ω VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP f MHz 2110 2140 2170 Zsource Ω 2.40 - j0.55 2.26 - j0.87 2.08 - j1.23 Zload Ω 3.07 - j2.05 2.89 - j2.38 2.66 - j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21060LR3 MRF21060LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF21060LR3 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C T M TA B M M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF21060LSR3 F MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21060LR3 MRF21060LSR3 8Rev. 9, 5/2006 Document Number: MRF21060 RF Device Data Freescale Semiconductor