MRF21085LSR3_08

Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 13.6 dB Drain Efficiency — 23% IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21085LSR3 2110 - 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET ARCHIVE INFORMATION CASE 465A - 06, STYLE 1 NI - 780S Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 224 1.28 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.78 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF21085LSR3 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss — 3.6 — pF VGS(th) VGS(Q) VDS(on) 2 3 — — 3.9 0.18 4 5 0.21 Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz) 1. Part is internally matched both on input and output. Gps 12 13.6 — dB η 20 23 — % IM3 — - 37.5 - 35 dBc ACPR — - 41 - 38 dBc IRL — - 12 -9 dB (continued) MRF21085LSR3 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) Gps — 13.6 — dB Symbol Min Typ Max Unit η — 36 — % IMD — - 31 — dBc IRL — - 12 — dB ARCHIVE INFORMATION P1dB — 100 — W MRF21085LSR3 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION VBIAS R1 + R2 C5 C4 C3 R3 B1 + C2 C7 C8 R4 VSUPPLY + C9 C10 C11 + C12 L1 Z4 RF INPUT Z8 RF OUTPUT Z1 C1 Z2 Z3 DUT Z5 Z6 C6 Z7 ARCHIVE INFORMATION Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.750″ 1.015″ 0.480″ 0.750″ 0.610″ 0.885″ 0.720″ 0.800″ x 0.084″ x 0.084″ x 0.800″ x 0.050″ x 0.800″ x 0.084″ x 0.084″ x 0.070″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Board PCB 0.030″ Glass Teflon®, Keene GX - 0300 - 55 - 22, εr = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR Figure 1. MRF21085L Test Circuit Schematic Table 5. MRF21085 Test Circuit Component Designations and Values Designators B1 C1, C6 C2 C3, C9 C4, C10 C5 C7 C8 C11, C12 L1 N1, N2 R1 R2 R3, R4 Description Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 10 pF Chip Capacitor, ATC #100B100JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100″ ID Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10 1.0 kΩ, 1/8 W Chip Resistor 180 kΩ, 1/8 W Chip Resistor 10 Ω, 1/8 W Chip Resistors MRF21085LSR3 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION C2 R1 B1 R2 C5 C4 CUT OUT WB1 WB2 C3 R3 C7 C8 L1 C9 C10 R4 C11 C12 C1 C6 ARCHIVE INFORMATION Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21085L Test Circuit Component Layout MRF21085LSR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION MRF21085 Rev 3 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS Avg.) N−CDMA 30 VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) G ps −25 −30 −35 −40 −45 −50 −55 IM3 (dBc), ACPR (dBc) −25 −30 −35 −40 −45 3rd Order −50 −55 −60 −65 4 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order η 7th Order 20 15 10 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz 45 40 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 35 30 25 IM3 ACPR IMD, INTERMODULATION DISTORTION (dBc) η ARCHIVE INFORMATION Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power −25 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) −30 −35 −40 −45 −50 −55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 22 20 18 16 ACPR 14 12 G ps 2090 Figure 4. Intermodulation Distortion Products versus Output Power η IRL VDD = 28 Vdc 2−Carrier W−CDMA Pout = 19 W (Avg.) 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3 0 −10 −20 −30 −40 −50 −60 2190 IDQ = 700 mA 1300 mA 1150 mA 850 mA 1000 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 2110 2130 2150 2170 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power 14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) η VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20 10 35 0 100 130 34 24 42 IMD 41 40 39 38 37 36 η Figure 6. 2-Carrier W-CDMA Broadband Performance −24 −25 −26 −27 −28 −29 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 25 26 27 28 −30 −31 −32 29 G ps , POWER GAIN (dB) VDD, DRAIN SUPPLY (V) Figure 7. CW Performance MRF21085LSR3 6 Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 5 100 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) 14.5 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 IRL 35 30 25 20 15 10 2095 2110 2125 2140 2155 2170 f, FREQUENCY (MHz) η VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 1000 mA 10 MHz Tone Spacing IMD −15 −20 −25 −30 −35 −40 2185 −10 IDQ = 1300 mA 1150 mA G ps , POWER GAIN (dB) 14 1000 mA 850 mA 13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 Gps 12.5 ARCHIVE INFORMATION Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 5th Order −45 7th Order −50 −55 0.1 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 3rd Order (dB) +20 +30 0 −10 −20 −30 −40 −50 −60 −70 1 Df, TONE SPACING (kHz) 10 30 −80 −25 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MRF21085LSR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg. f MHz 2110 2140 2170 Zsource Ω 1.10 - j3.71 1.11 - j3.57 1.12 - j3.40 Zload Ω 1.23 - j2.10 1.26 - j1.92 1.25 - j1.76 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF21085LSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION f = 2170 MHz Zo = 5 Ω PACKAGE DIMENSIONS 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ARCHIVE INFORMATION M H 3 (INSULATOR) S M (INSULATOR) bbb C M TA B M aaa M TA M B M F T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF21085LSR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ccc TA M B M ccc M TA M B M PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 11 Date Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 ARCHIVE INFORMATION • Added Product Documentation and Revision History, p. 10 MRF21085LSR3 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION • Data sheet archived. Part no longer manufactured. How to Reach Us: Home Page: www.freescale.com ARCHIVE INFORMATION USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF21085LSR3 Document Number: RF Device Data MRF21085 Rev. 11, 10/2008 Freescale Semiconductor 11 ARCHIVE INFORMATION Web Support: http://www.freescale.com/support