MRF21120R6

Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power — 14 Watts (Avg.) Power Gain — 11.5 dB Efficiency — 16% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF21120R6 2110 - 2170 MHz, 120 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 389 2.22 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.45 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21120R6 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) V(BR)DSS IGSS IDSS 65 — — — — — — 1 10 Vdc μAdc μAdc Symbol Min Typ Max Unit Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μAdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) Gate Quiescent Voltage (3) (VDS = 28 V, ID = 1000 mA) Drain- Source On - Voltage (1) (VGS = 10 V, ID = 2 A) Dynamic Characteristics (1, 2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Device measured in push - pull configuration. gfs VGS(th) VGS(Q) VDS(on) — 2.5 3 — 4.8 3 3.9 0.38 — 3.8 5 0.5 S Vdc Vdc Vdc Crss — 2.8 — pF Gps dB 10.5 30 11.4 34.5 — — % η IMD — IRL — - 31 - 12 - 28 -9 dB dB Gps — 11.5 — dB Gps — 11.5 — dB η — 34.5 — % IMD — - 31 — dB IRL — - 12 — dB (continued) MRF21120R6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Power Output, 1 dB Compression Point (VDD = 28 Vdc, CW, IDQ = 1000 mA, f1 = 2170.0 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA, f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA, f1 = 2170.0 MHz) 1. Device measured in push - pull configuration. (1) Symbol (continued) P1dB Gps Min Typ Max Unit — — 120 10.5 — — W dB η — 42 — % MRF21120R6 RF Device Data Freescale Semiconductor 3 VDD + C31 + C30 C28 + C17 C16 + C15 C13 C7 Z24 Z20 Z22 Z38 Z1 COAX1 Z2 COAX2 L1 Z5 Z7 C1 Z9 R2 C2 Z11 L2 Z13 C4 Z15 Z17 Z19 Z21 Z23 Z25 R6 C6 + VGG + C25 R4 C24 C23 C21 + C40 B1, B2 C1, C2, C12 C3, C4, C9, C10 C5 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C27, C34, C36, C42 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C30, C39 C31, C40 C35, C44 Coax1, Coax2 Coax3, Coax4 L1, L5 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Beads, Fair Rite 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitors, ATC 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 2.0 pF Chip Capacitors, ATC 0.5 pF Chip Capacitor, ATC 0.2 pF Chip Capacitor, ATC 5.1 pF Chip Capacitors, ATC 91 pF Chip Capacitors, ATC 22 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 0.039 μF Chip Capacitors, ATC 1000 pF Chip Capacitors, ATC 0.022 μF Chip Capacitors, ATC 1.0 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 100 μF, 50 V Electrolytic Capacitors, Sprague 470 μF, 63 V Electrolytic Capacitors, Sprague 25 Ω Semi Rigid Coax, 70 mil OD, 1.05″ Long 50 Ω Semi Rigid Coax, 85 mil OD, 1.05″ Long 5.0 nH Minispring Inductors, Coilcraft 8.0 nH Minispring Inductor, Coilcraft 7.15 nH Microspring Inductors, Coilcraft 1 kΩ, 1/4 W Fixed Metal Film Resistors, Dale 270 Ω, 1/8 W Fixed Film Chip Resistors, Dale 1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale 0.150″ x 0.080″ Microstrip Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors + + C32 C33 C34 C35 + VGG + B1 L5 Z40 Z41 Z42 RF OUTPUT C12 C5 C19 R3 C14 C29 C27 L3 Z26 Z28 Z30 Z32 Z34 C9 Z36 Z4 Z6 RF INPUT R1 Z8 Z10 R5 Z12 C3 Z14 Z16 Z18 DUT C8 C11 COAX3 COAX4 Z27 Z29 Z31 Z33 Z35 C10 Z37 Z39 L4 + C37 + C39 C38 VDD + C41 C42 C43 C44 + + C36 B2 C22 C20 0.320″ x 0.080″ Microstrip 1.050″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip 0.140″ x 0.080″ Microstrip 0.610″ x 0.080″ Microstrip 0.135″ x 0.080″ Microstrip 0.130″ x 0.080″ Microstrip 0.300″ x 0.350″ Microstrip 0.150″ x 0.500″ Microstrip 0.075″ x 0.500″ Microstrip 0.330″ x 0.500″ Microstrip 0.100″ x 0.550″ Microstrip 0.175″ x 0.550″ Microstrip 0.045″ x 0.550″ Microstrip 0.190″ x 0.325″ Microstrip 0.080″ x 0.325″ Microstrip 0.515″ x 0.080″ Microstrip 0.020″ x 0.080″ Microstrip 0.565″ x 0.080″ Microstrip 0.100″ x 0.080″ Microstrip 0.470″ x 0.080″ Microstrip 0.100″ x 0.080″ Microstrip 0.03″ Teflon®, εr = 2.55 Copper Clad, 2 oz. Cu N - Type Panel Mount, Stripline Figure 1. 2110 - 2200 MHz Broadband Test Circuit Schematic MRF21120R6 4 RF Device Data Freescale Semiconductor C34 226 35K 649 C35 C19 226 35K 649 VGG C15 C17 C30 640 50K 105 C31 C32 C33 C28 C27 VDD B1 R3 R5 R1 C1 C2 L2 C4 L1 R2 R6 R4 B2 C23 VGG C25 C24 C3 C13 C7 L3 L5 C8 C9 C11 C10 C12 C6 C20 226 35K 649 226 35K 649 C16 C14 C29 C5 L4 C36 226 35K 649 C37 C21 C22 C39 C38 C40 226 35K 649 640 50K 105 C41 C43 VDD C42 C44 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 2110 - 2200 MHz Broadband Test Circuit Component Layout MRF21120R6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 14 −20 13 Gps , POWER GAIN (dB) 12 1800 mA 1500 mA 1300 mA 1100 mA 1000 mA 850 mA VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 −30 1800 mA 600 mA −50 1500 mA 1300 mA 1100 mA VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz 850 mA −40 11 10 600 mA 9 0.10 −60 0.10 1000 mA 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 3. Power Gain versus Output Power Figure 4. Intermodulation Distortion versus Output Power Ref Lv1 −5 dBm MARKER 1 [T1] −22.77 dBm 2.17000000 GHz 1 RBW VBW SWT 1 [T1] 30 kHZ 1 MHz 2s RF Att Unit 10 dB dBm A Gps 12 Gps , POWER GAIN (dB) 11 10 9 8 7 6 5 2100 2120 IMD 2160 2140 f, FREQUENCY (MHz) 2180 VDD = 28 Vdc, IDQ = 1000 mA Two−Tone, 100 kHz Tone Spacing VSWR η 45 40 35 −24 −26 −28 −30 −32 2200 IMD, INTERMODULATION η, EFFICIENCY (%) DISTORTION (dBc) 13 50 −10 −20 −30 −40 2.0 VSWR −50 −60 −70 −80 −90 1.0 −100 Center 2.17 GHz c11 c11 −22.77 dBm 2.17000000 GHz −2.95 dBm CH PWR −45.14 dB ACR UP −45.45 dB ACR LOW 1RM 1.5 cu1 c0 1.5 MHz c0 cu1 Span 15 MHz Figure 5. Class AB Broadband Circuit Performance Figure 6. 2.17 GHz W - CDMA Mask at 14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch 14 Gps 12 Gps , POWER GAIN (dB) 10 η 8 6 4 ACPR DOWN ACPR UP 2 1.0 10 VDD = 28 Vdc IDQ = 1000 mA f = 2170 MHz 60 40 20 0 −20 −40 −60 η, EFFICIENCY (%) ACPR (dB) 13 12 Gps Gps , POWER GAIN (dB) 11 10 9 8 7 6 5 0.10 1.0 IMD η VDD = 28 Vdc, IDQ = 1000 mA f = 2170.0 MHz, f2 = 2170.1 MHz 80 60 40 20 0 η, EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −20 −40 −60 10 100 −80 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W - CDMA) MRF21120R6 6 Figure 8. Power Gain, Efficiency, IMD versus Output Power RF Device Data Freescale Semiconductor Zo = 10 Ω f = 2110 MHz Zsource f = 2170 MHz f = 2170 MHz Zload f = 2110 MHz VDD = 28 V, IDQ = 1000 mA, Pout = 120 W PEP f MHz 2110 2140 2170 Zsource Ω 3.7 - j2.0 3.5 - j2.4 3.1 - j2.5 Zload Ω 4.9 - j2.8 5.1 - j2.7 5.2 - j2.5 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 9. Series Equivalent Source and Load Impedance MRF21120R6 RF Device Data Freescale Semiconductor 7 NOTES MRF21120R6 8 RF Device Data Freescale Semiconductor NOTES MRF21120R6 RF Device Data Freescale Semiconductor 9 NOTES MRF21120R6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb M A A G4 L 1 2 TA M B M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) B D TA M B M ccc ccc M M TA (LID) M B M TA N (LID) M B M R H C F E PIN 5 M (INSULATOR) bbb M T SEATING PLANE (INSULATOR) S bbb M TA M B M TA M B M CASE 375D - 05 ISSUE E NI - 1230 STYLE 1: PIN 1. 2. 3. 4. 5. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21120R6 1Rev. 11, 5/2006 2 Document Number: MRF21120 RF Device Data Freescale Semiconductor