MRF281SR1

Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. • Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — - 29 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • S - Parameter Characterization at High Bias Levels • RoHS Compliant • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. MRF281SR1 MRF281ZR1 2000 MHz, 4 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 458B - 03, STYLE 1 NI - 200S MRF281SR1 CASE 458C - 03, STYLE 1 NI - 200Z MRF281ZR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 ± 20 20 0.115 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 5.74 Unit °C/W Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 — — 74 — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF281SR1 MRF281ZR1 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.1 A) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 11 12.5 — dB Ciss Coss Crss — — — 5.5 3.3 0.17 — — — pF pF pF VGS(th) VGS(q) VDS(on) 2.4 3 0.18 3.2 4.1 0.24 4 5 0.30 Vdc Vdc Vdc Symbol Min Typ Max Unit η 30 33 — % IRL — - 16 - 10 dB IMD — - 31 - 29 dBc Gps 11 12.5 — dB η 30 — — % IRL — - 16 - 10 dB IMD — - 31 — dBc Gps 10.5 12 — dB η 40 44 — % MRF281SR1 MRF281ZR1 2 RF Device Data Freescale Semiconductor Zo = 25 Ω f = 2000 MHz Zin f = 2000 MHz f = 1500 MHz ZOL* f = 1500 MHz VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz 1500 1600 1700 1800 1900 2000 Zin Zin Ω 3.15 - j5.3 3.1 - j3.8 3.1 - j2.3 3.1 - j0.7 3.1 + j0.9 3.1 + j2.4 ZOL* Ω 15.5 - j13.6 14.7 - j12.5 14.0 - j11.7 13.4 - j11.0 12.8 - j10.1 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 3 Table 4. Common Source S - Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 S11 |S11| .982 .947 .912 .886 .859 .854 .841 .837 .838 .841 .840 .849 .848 .856 .858 .871 .868 .870 .872 .877 .876 .880 .882 .886 .896 .897 ∠f -28 -52 -73 -90 -103 -114 -123 -131 -138 -143 -149 -153 -158 -162 -167 -170 -173 -176 -180 178 174 171 168 165 162 158 dB 18.9 17.0 15.0 12.9 11.1 9.69 8.54 7.57 6.69 6.01 5.41 4.91 4.51 4.12 3.78 3.50 3.22 3.00 2.80 2.63 2.47 2.36 2.21 2.12 1.97 1.89 S21 ∠f 160 143 129 117 108 100 93 87 81 76 72 68 64 60 57 54 51 49 46 44 41 39 36 34 32 29 |S12| .008 .015 .019 .022 .022 .023 .022 .021 .019 .018 .015 .013 .012 .010 .009 .008 .009 .009 .011 .013 .015 .018 .021 .024 .027 .029 S12 ∠f 73 58 45 36 28 23 18 15 12 11 12 13 18 26 36 54 69 82 95 104 109 111 114 114 115 117 |S22| .851 .811 .770 .741 .719 .718 .709 .714 .719 .728 .742 .745 .758 .769 .786 .797 .808 .823 .828 .845 .843 .859 .858 .872 .863 .873 S22 ∠f -13 -25 -33 -42 -47 -51 -56 -59 -62 -64 -66 -68 -69 -70 -70 -72 -71 -72 -72 -72 -72 -71 -72 -70 -70 -69 MRF281SR1 MRF281ZR1 4 RF Device Data Freescale Semiconductor NOTES MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 5 NOTES MRF281SR1 MRF281ZR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS ccc M TA M 1 M B M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 −−− 0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 −−− 0.508 0.254 REF 0.381 REF (INSULATOR) R (LID) ccc M TA M B M 4X Z DIM A B C D E F H K M N R S Z bbb ccc 2X K S (INSULATOR) ccc M T A B 2 2X M B M D bbb M M 3 TA B M M B M (FLANGE) B ccc M TA (LID) N E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F C H A (FLANGE) A T SEATING PLANE CASE 458B - 03 ISSUE D NI - 200S MRF281SR1 ccc M TA M M B M F R (LID) (INSULATOR) 4X Y Z 1 ccc M TA M B M 3 NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 −−− R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 −−− R .508 0.254 REF 0.381 REF S (INSULATOR) ccc M TA M B (FLANGE) M B 2 2X B 2X D M K bbb TA M B M ccc M TA (LID) M B M N DIM A B C D E F H K M N R S Y Z bbb ccc H C E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A (FLANGE) A T SEATING PLANE CASE 458C - 03 ISSUE D NI - 200Z MRF281ZR1 MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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