MRF284

Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. • Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc • Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ MRF284LR1 MRF284LSR1 2000 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF284LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF284LSR1 Value - 0.5, +65 ± 20 87.5 0.5 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.0 Unit °C/W Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 1.0 10 Vdc μAdc μAdc (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Symbol Min Typ Max Unit © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF284LR1 MRF284LSR1 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (in Freescale Test Fixture, 50 ohm system) Common - Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 9 10.5 — dB Ciss Coss Crss — — — 43 23 1.4 — — — pF pF pF VGS(th) VGS(q) VDS(on) gfs 2.0 3.0 — — 3.0 4.0 0.3 1.5 4.0 5.0 0.6 — Vdc Vdc Vdc S Symbol Min Typ Max Unit η 30 35 — % IMD — - 32 - 29 dBc IRL — - 15 -9 dB Gps 9 10.4 — dB η — 35 — % IMD — - 34 — dBc IRL — - 15 -9 dB Gps 8.5 9.5 — dB η 35 45 — % MRF284LR1 MRF284LSR1 2 RF Device Data Freescale Semiconductor VGG + C3 R1 W1 C4 R2 R3 R5 R6 W2 C12 R7 W3 C14 VDD + C17 + C18 B1 C6 R4 B2 C7 C15 C13 B3 L1 Z10 RF INPUT Z1 Z2 C1 Z3 C2 C5 Z4 Z5 Z6 Z7 C8 Z8 C9 DUT Z9 C10 Z11 Z12 Z13 C11 L2 L3 RF OUTPUT Z14 Z15 C16 Z16 Z17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.530″ x 0.080″ Microstrip 0.255″ x 0.080″ Microstrip 0.600″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.015″ x 0.325″ Microstrip 0.085″ x 0.325″ Microstrip 0.165″ x 0.325″ Microstrip 0.110″ x 0.515″ Microstrip 0.095″ x 0.515″ Microstrip 0.050″ x 0.515″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.155″ x 0.515″ Microstrip 0.120″ x 0.325″ Microstrip 0.150″ x 0.325″ Microstrip 0.010″ x 0.325″ Microstrip 0.505″ x 0.080″ Microstrip 0.865″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values Designators B1 - B3 C1, C2, C8 C3, C17 C4, C14 C5 C6, C12 C7, C13 C9 C10 C11 C15, C16 C18 L1, L2 L3 R1, R2, R3, R5, R6, R7 R4 W1, W2, W3 WS1, WS2 Description Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B 0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 220 pF Chip Capacitor, ATC #100B221KP500X 1000 pF Chip Capacitors, ATC #100B102JCA50X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X 2.7 pF Chip Capacitor, ATC #100B2R7CCA500X 0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL 200 pF Chip Capacitors, ATC #100B201KP500X 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T - 5 2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T - 5 12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT 560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″ Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″ MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 3 C4 R1 W1 B1 R2 C6 C12 W2 C14 W3 R6 R7 C17 R3 R4 B3 R5 B2 C3 C7 L1 C5 WS1 WS2 C9 C10 L2 C13 C18 C15 C16 L3 C1 C2 C8 C11 MRF284 Rev - 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout MRF284LR1 MRF284LSR1 4 RF Device Data Freescale Semiconductor VSUPPLY + R1 R3 P1 Q1 R2 R4 Q2 R5 R6 + C9 C7 R7 C8 R8 C2 C4 C11 C13 R9 C10 R10 R11 C15 C16 VDD C1 B3 B1 B2 + B4 B5 VDD L4 RF OUTPUT L1 RF INPUT Z1 Z2 Z3 C3 L2 C5 Z4 Z5 L3 Z6 Z7 Z8 Z9 DUT Z10 Z11 Z12 Z13 Z14 C14 Z15 Z16 C12 C6 C17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.363″ x 0.080″ Microstrip 0.080″ x 0.080″ Microstrip 0.916″ x 0.080″ Microstrip 0.517″ x 0.080″ Microstrip 0.050″ x 0.325″ Microstrip 0.050″ x 0.325″ Microstrip 0.071″ x 0.325″ Microstrip 0.125″ x 0.325″ Microstrip 0.210″ x 0.515″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.210″ x 0.515″ Microstrip 0.235″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.510″ x 0.080″ Microstrip 0.990″ x 0.080″ Microstrip 0.390″ x 0.080″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.55 Figure 3. 2000 MHz Class A Test Circuit Schematic MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 5 Table 5. 2000 MHz Class A Test Circuit Component Designations and Values Designators B1 - B5 C1, C9, C16 C2, C13 C3, C14 C4, C11 C5 C6 C7, C15 C8 C10 C12, C17 L1 L2 L3, L4 P1 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 - R11 Description Ferrite Beads, Round, Ferroxcube # 56 - 590 - 65 - 3B 100 μF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L 51 pF Chip Capacitors, ATC #100B510JCA500x 10 pF Chip Capacitors, ATC #100B100JCA500X 12 pF Chip Capacitors, ATC #100B120JCA500X 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL 4.7 pF Chip Capacitor, ATC #100B4R7CCA500X 91 pF Chip Capacitors, ATC #100B910KP500X 1000 pF Chip Capacitor, ATC #100B102JCA50X 0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS 0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH 5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH 1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns Transistor, NPN, #MJD31, Case 369A - 10 Transistor, PNP, #MJD32, Case 369A - 10 360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT 2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT 1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00 4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT 2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT 270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT 12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT MRF284LR1 MRF284LSR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 0 0.5 1.0 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 3.0 1.5 2.5 2.0 Pin, INPUT POWER (WATTS) 3.5 Gps Pout 14 Pout , OUTPUT POWER (WATTS) 13 12 G ps , GAIN (dB) 11 10 9 8 7 6 4.0 45 4W 40 3W 35 2W 30 25 Pin = 1 W 20 15 VDD = 26 Vdc IDQ = 200 mA Single Tone 10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) Figure 4. Output Power & Power Gain versus Input Power Figure 5. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dBc) − 50 − 60 − 70 − 80 3rd Order 5th Order 7th Order G ps , GAIN (dB) VDD = 26 Vdc IDQ = 200 mA − 30 f = 2000.0 MHz 1 f2 = 2000.1 MHz − 40 11 Gps 10 9 8 7 6 16 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD −15 −20 −25 −30 −35 −40 28 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage IMD, INTERMODULATION DISTORTION (dBc) − 20 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA − 40 300 mA 200 mA − 50 IDQ = 400 mA − 60 0.1 1.0 10 13 IDQ = 400 mA G ps , POWER GAIN (dB) 12 300 mA − 30 200 mA 11 10 9 100 mA 8 0.1 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 8. Intermodulation Distortion versus Output Power Figure 9. Power Gain versus Output Power MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 7 IMD, INTERMODULATION DISTORTION (dBc) − 20 12 −10 TYPICAL CHARACTERISTICS 3 Tflange = 75°C ID, DRAIN CURRENT (Adc) C, CAPACITANCE (pF) Tflange = 100°C 2 100 Ciss Coss 10 1 TJ = 175°C 0 0 4 8 12 16 20 24 28 VDD, DRAIN SUPPLY VOLTAGE (Vdc) Crss 1 0 4 8 12 16 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28 Figure 10. DC Safe Operating Area Figure 11. Capacitance versus Drain Source Voltage EFFICIENCY (%) 3.0 INTERMODULATION DISTORTION (dBc) INPUT VSWR 2.0 1.0 11 45 Gps η VDD = 26 Vdc Pout = 30 W (PEP), IDQ = 200 mA Two−Tone Frequency Delta = 100 kHz IMD 40 35 30 −32 60 50 40 30 20 10 0 −10 −20 −30 − 40 − 50 −60 −70 −80 −90 Pout , OUTPUT POWER (dBm) FUNDAMENTAL 10 9 Gps, GAIN (dB) VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 8 7 6 5 4 3 60 1920 3rd Order −36 VSWR 1940 1960 f, FREQUENCY (MHz) 1980 −40 2000 0 5 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 55 Figure 12. Class A Third Order Intercept Point 1.E+10 MTTF FACTOR (HOURS x AMPS 2) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 50 Figure 13. 1920 - 2000 MHz Broadband Circuit Performance 100 150 200 TJ, JUNCTION TEMPERATURE (°C) 250 This graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 14. MTTF Factor versus Junction Temperature MRF284LR1 MRF284LSR1 8 RF Device Data Freescale Semiconductor 1800 MHz 1800 MHz Zload f = 2000 MHz Zsource Zo = 5 Ω f = 2000 MHz VCC = 26 V, IDQ = 200 mA, Pout = 15 W Avg. f MHz 1800 1860 1900 1960 2000 Zsource Ω 1.0 - j0.4 1.0 - j0.8 1.0 - j1.1 1.0 - j1.4 1.0 - j2.3 Zload Ω 2.1 + j0.4 2.2 - j0.2 2.3 - j0.5 2.5 - j0.9 2.6 - j0.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedence MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 9 NOTES MRF284LR1 MRF284LSR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 3 (FLANGE) 2X B 2 D bbb M T A 2X M K (LID) B M R ccc N ccc M M TA M B M (LID) TA C M B M H F E (INSULATOR) S T (INSULATOR) SEATING PLANE aaa TA M M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M B M A A CASE 360B - 05 ISSUE G NI - 360 MRF284LR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A B (FLANGE) A 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (FLANGE) B 2 2X D M 2X K M bbb TA M B (LID) R ccc (LID) M TA M B F M N H M ccc E TA M B M C PIN 3 bbb M (INSULATOR) S (INSULATOR) M T M SEATING PLANE M aaa M TA M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF TA B CASE 360C - 05 ISSUE E NI - 360S MRF284LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF284LR1 MRF284LSR1 1Rev. 17, 5/2006 2 Document Number: MRF284 RF Device Data Freescale Semiconductor