MRF372

Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 32 volt transmitter equipment. • Typical Narrowband Two - Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 17 dB Efficiency — 36% IMD — - 35 dBc • Typical Broadband Two - Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power — 180 Watts PEP Power Gain — 14.5 dB Efficiency — 37% IMD — - 31 dBc • Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TC TJ MRF372R3 MRF372R5 470 - 860 MHz, 180 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Value - 0.5, +68 - 0.5, +15 17 350 2.0 - 65 to +150 150 200 Unit Vdc Vdc Adc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.5 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF372R3 MRF372R5 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) Gate Quiescent Voltage (2) (VDS = 32 V, ID = 100 mA) Drain - Source On - Voltage (1) (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) Dynamic Characteristics (1) Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) V(BR)DSS IDSS IGSS 68 — — — — — — 10 1 Vdc μAdc μAdc VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — 3 3.5 0.28 2.6 4 4.5 0.45 — Vdc Vdc Vdc S Ciss Coss Crss — — — 260 69 2.5 — — — pF pF pF Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system) Gps 16 17 — dB η 33 36 — % IMD — - 35 - 31 dBc Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. Gps — 14.5 — dB η — 37 — % IMD — - 31 — dBc MRF372R3 MRF372R5 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 200 Ciss 150 15 C rss , Capacitance (pF) 20 C oss , C iss , Capacitance (pF) 100 Coss 50 10 Crss 5 0 0 10 20 30 40 50 0 60 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Note: Ciss does not include input matching capacitance. Figure 1. Capacitance versus Voltage MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 3 Á Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ Table 5. 860 MHz Narrowband DC Bias Networks Component Designations and Values Balun A, B PCB R3A, B R1A, B, R2A, B R4A, B, R5A, B L4A, B L3A, B L2A, B L1A, B C15 C13 C12A, B C11 C10A, B C9 C8A, B C7A, B C6 C5A, B C4A, B, C14A, B C3A, B C2 C1 Designation 4 MRF372R3 MRF372R5 VGG + C3 R1 Figure 2. 860 MHz Narrowband DC Bias Networks R2 L1 Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 5.0 nH, Coilcraft #A02T 3.85 nH, Coilcraft #0906 - 4 #24 AWG, 3 Turns Loose, Fair Rite #2643706001 130 nH, Coilcraft #132 - 11SM 1.2 pF Chip Capacitor, ATC 3.9 pF Chip Capacitor, ATC 0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT 5.1 pF Chip Capacitor, ATC 2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT 10.0 pF Chip Capacitor, ATC 1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT 2.7 pF Chip Capacitors, ATC 10.0 pF Chip Capacitor, ATC 100 pF Chip Capacitors, ATC 47.0 pF Chip Capacitors, ATC 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS 0.5 — 5.0 pF Variable Capacitor, Johansen Gigatrim 2.2 pF Chip Capacitor, ATC L2 C5 C8 L3 GATE C7 R3 DRAIN L4 Description R4 R5 C12 C10 RF Device Data Freescale Semiconductor VDD R2A R1A C5A L1A C3A C4A L2A C8A L3A R3A C6 C1 C2 C4B R3B C3B R1B R2B L1B L2B C5B L3B C7B C9 R4B L4B C11 R5B C12B C10B MRF372 Rev 1a C13 C14B C7A C10A C12A R4A R5A L4A C14A C15 C8B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. 860 MHz Narrowband Component Layout MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 5 TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS 35 30 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 25 20 15 10 IMR 5 0 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. −45 −50 100 VDD = 32 Vdc IDQ = 1600 mA 2 K Mode 64 QAM 10 dB Peak/Avg. Ratio Gps −15 −20 h −25 −30 −35 −40 IMR, INTERMODULATION RATIO (dB) Figure 4. COFDM Performance (860 MHz) 40 35 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 30 25 20 15 IMR 10 5 −45 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. 100 −50 Gps h VDD = 32 Vdc IDQ = 1600 mA 6 dB Peak/Avg. Ratio −15 −20 −25 −30 −35 −40 IMR, INTERMODULATION RATIO (dB) 20 18 G ps, POWER GAIN (dB) IDQ = 1600 mA 1.2 A 800 mA 400 mA 16 14 12 VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 10 Figure 5. 8 - VSB Performance (860 MHz) Figure 6. Power Gain versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −10 −15 −20 −25 −30 800 mA −35 −40 −45 −50 10 1.2 A 1.6 A 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz IDQ = 400 mA 45 40 η , DRAIN EFFICIENCY (%) D 35 30 25 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 32 Vdc IDQ = 800 mA f1 = 857 MHz f2 = 863 MHz Figure 7. Intermodulation Distortion versus Output Power MRF372R3 MRF372R5 6 Figure 8. Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor Z o = 10 Ω f = 875 MHz Zload f = 845 MHz f = 875 MHz Zsource f = 845 MHz VDD = 32 V, IDQ = 800 mA, Pout = 180 W PEP f MHz 845 860 875 Harmonics f GHz 1.69 1.72 1.75 Zsource Ω 2.85 + j14.30 3.27 + j14.32 3.35 + j14.36 Zload Ω 1.23 + j9.37 1.54 + j9.60 1.73 + j9.62 Zsource Ω 3.99 - j2.50 3.56 - j1.98 3.18 - j1.46 Zload Ω 5.63 + j0.38 5.28 + j0.43 4.94 + j0.56 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 9. Narrowband Series Equivalent Source and Load Impedance MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 7 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ MRF372R3 MRF372R5 Balun A, B PCB R9A, B, C, D R8 R7 R6A, B R5A, B R4TA, B R3A, B, R10A, B R2A, B R1A, B L3A, B, C L2A, B L1A, B C18A, B C17A, B C16A, B C15A, B C12 C11 C10 C9A, B C8A, B C7A, B C6 C5 C4 C3A, B, C14A, B, C, D C2, C13 C1 VGG 8 Table 6. 470 - 860 MHz Broadband DC Bias Networks Component Designations and Values Designation R6 C9 Figure 10. 470 - 860 MHz Broadband DC Bias Networks + C8 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, εr = 3.48 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206) 100 kΩ Potentiometer, Bourns 6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) 6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 520 Ω, Thermistor, Vishay #NTHS—1206J14520R5% 390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) 2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210) 10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) 12.5 nH, Coilcraft #A04T 5.45 nH, Coilcraft #0906 - 5 12.55 nH, Coilcraft #1606 - 10 0.01 mF Chip Capacitors, ATC 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT 10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS 3.3 pF Chip Capacitors, ATC 3.9 pF Chip Capacitor, ATC 6.8 pF Chip Capacitor, ATC 13 pF Chip Capacitor, ATC 0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT 22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS 6.2 pF Chip Capacitors, ATC 10.0 pF Chip Capacitor, ATC 7.5 pF Chip Capacitor, ATC 4.7 pF,Chip Capacitor, ATC 100 pF Chip Capacitors, ATC 0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim 0.7 pF Chip Capacitor, ATC R3 R7 R2 R4T L2 GATE C7 R5 DRAIN L3 R9A Description R9B C18 C17 RF Device Data Freescale Semiconductor + VDD C16 C8A R6A R8 C9A L1A C3A C4 C1 C2 R1B C3B R5B R9C L1B C9B R6B C8B R7 R4TB MRF372 Rev. 1a L2B R2B C7B R3B C18B C17B C16B C16A R3A C7A R1A R5A C5 C6 C18A R9A L3A C14A C10 C11 C12 L3B L3C R9D C13 C14D C15B R10B C14B C14C C17A R4TA R2A L2A R9B C15A R10A Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 11. 470 - 860 MHz Broadband Component Layout MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 9 TYPICAL TWO - TONE BROADBAND CHARACTERISTICS 20 VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz IMD, INTERMODULATION DISTORTION (dBc) −10 −15 −20 −25 −30 IMD = 470 MHz −35 −40 660 MHz −45 −50 10 100 Pout, OUTPUT POWER (WATTS) PEP 860 MHz VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz G ps, POWER GAIN (dB) 18 16 Gps = 660 MHz 14 860 MHz 470 MHz 12 10 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain versus Output Power Figure 13. Intermodulation Distortion versus Output Power 45 40 hD , DRAIN EFFICIENCY (%) 35 30 25 470 MHz 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 32 Vdc IDQ = 1000 mA f1 − f2 = 6 MHz hD = 860 MHz 660 MHz Figure 14. Drain Efficiency versus Output Power MRF372R3 MRF372R5 10 RF Device Data Freescale Semiconductor Z o = 10 Ω Z o = 10 Ω f = 860 MHz f = 860 MHz Zsource Zload f = 470 MHz f = 470 MHz VDD = 32 V, IDQ = 1000 mA, Pout = 180 W PEP f MHz 470 560 660 760 860 Zsource Ω 4.46 - j2.57 6.40 + j1.06 7.84 + j0.14 6.67 + j0.46 6.25 + j0.31 Zload Ω 4.88 - j3.50 5.45 - j0.07 8.13 + j0.73 8.27 - j1.00 7.52 + j0.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 15. Broadband Series Equivalent Source and Load Impedance MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 11 NOTES MRF372R3 MRF372R5 12 RF Device Data Freescale Semiconductor NOTES MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 13 NOTES MRF372R3 MRF372R5 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G L ccc R M 4 2X TA M B M J 1 2 Q bbb M TA M B M (LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B 5 4X (FLANGE) K 4X 3 4 S (INSULATOR) M D bbb M B TA M bbb TA M B M B M ccc M TA (LID) M B M N F E H bbb A (INSULATOR) M M C B M T TA A M SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375G - 04 ISSUE G NI - 860C3 MRF372R3 MRF372R5 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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