MRF374A_06

Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two - Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — - 32.5 dBc • Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Differential Large - Signal Impedance Parameters • RoHS Compliant MRF374A 470- 860 MHz, 130 W, 32 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 375F - 04, STYLE 1 NI - 650 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +70 - 0.5, +15 302 1.72 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.58 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF374A 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) V(BR)DSS IDSS IGSS 70 — — — — — — 1 1 Vdc μAdc μAdc Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) Gate Quiescent Voltage (2) (VDS = 32 V, ID = 100 mA) Drain - Source On - Voltage (1) (VGS = 10 V, ID = 3 A) Dynamic Characteristics (1) Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. VGS(th) VGS(Q) VDS(on) 2 2.5 — 2.9 3.3 0.41 4 4.5 0.45 Vdc Vdc Vdc Ciss Coss Crss — — — 97.3 49 1.91 — — — pF pF pF Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system) Gps 16 17.3 — dB η 36 41.2 — % IMD — - 32.5 - 28 dB MRF374A 2 RF Device Data Freescale Semiconductor MRF374 Rev 3a VGS R3A L3A R2 L4 R4A C4A R1A C9A C10 C9B R4B L3B L2B C7B C13B L1B C14B C11 C12B C14A L1A C12A L2A C7A C13A VDD RF INPUT C1 C2 RF OUTPUT C3 C4B C5 R1B C6 VGS R3B VDD Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. MRF374A Narrowband Test Circuit Component Layout MRF374A RF Device Data Freescale Semiconductor 3 Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values Designation C1 C2 C3 C4A, B, C12A, B C5 C6 C7A, B, C14A, B C9A, B C10 C11 C13A, B L1A, B L2A, B L3A, B L4 R1A, B R2 R3A, B R4A, B PCB Balun B1A, B 0.8 pF Chip Capacitor, ATC 2.2 pF Chip Capacitor, ATC 0.5 - 5.0 pF Variable Capacitor, Johanson Gigatrim 47 pF Chip Capacitors, ATC 1.0 pF Chip Capacitor, ATC 10 pF Chip Capacitor, ATC 100,000 pF Chip Capacitors, ATC 15 pF Chip Capacitors, ATC 3.9 pF Chip Capacitor, ATC 5.1 pF Chip Capacitor, ATC 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT 5.0 nH, Coilcraft #A02T 8.0 nH, Coilcraft #A03T 130.0 nH, Coilcraft #132 - 11SMJ 8.8 nH, Coilcraft #1606 - 8 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, εr = 3.48 Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 Description MRF374A 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 18 VDD = 32 Vdc 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 400 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 500 600 700 800 900 28 Vdc −15 −20 −25 −30 −35 −40 −45 −50 400 32 Vdc VDD = 28 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 500 600 700 800 900 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 2. Gain versus Frequency in Broadband Circuit 45 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 20 Gps G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) 15 Figure 3. Intermodulation Distortion versus Frequency in Broadband Circuit 40 η, DRAIN EFFICIENCY (%) 35 VDD = 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz η D 35 VDD = 28 Vdc 30 32 Vdc 25 10 30 5 IRL 0 400 25 20 400 500 600 700 800 900 f, FREQUENCY (MHz) 500 600 700 800 20 900 f, FREQUENCY (MHz) Figure 4. Drain Efficiency versus Frequency in Broadband Circuit η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Figure 5. Performance in Broadband Circuit 200 C oss , C iss , Capacitance (pF) 20 40 35 30 25 20 15 10 5 0 0.1 1 10 Pout, OUTPUT POWER (WATTS) AVG. η IMR VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz 2 K Mode COFDM 64 QAM 10.5 Peak/Avg. Ratio Gps η , DRAIN EFFICIENCY (%) D −20 −25 −30 −35 −40 −45 −50 −55 −60 100 IMR, INTERMODULATION (dBc) 40 100 Ciss 10 50 Coss Crss 5 0 0 10 20 30 40 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 0 60 C rss , Capacitance (pF) 150 15 Figure 6. Capacitance versus Voltage Figure 7. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit MRF374A RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 0.1 η 1 10 VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz Gps IMR −20 −25 G ps , POWER GAIN (dB) −30 −35 −40 −45 −50 −55 −60 100 IMR, INTERMODULATION (dBc) 19 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) PEP IDQ = 1.0 A 800 mA 600 mA 400 mA 200 mA VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz Pout, OUTPUT POWER (WATTS) AVG. Figure 8. 8 - VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit Figure 9. Power Gain versus Peak Output Power in Narrowband Circuit IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 −45 800 mA −50 −55 1 10 Pout, OUTPUT POWER (WATTS) PEP 1.0 A VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz 100 600 mA IDQ = 200 mA η , DRAIN EFFICIENCY (%) D 50 40 400 mA 30 20 VDD = 32 Vdc IDQ = 800 mA f = 857 MHz nFrequency = 6 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 10 0 Figure 10. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit Figure 11. Drain Efficiency versus Peak Output Power in Narrowband Circuit MRF374A 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 560 MHz 760 MHz 660 MHz 860 MHz VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 18 17.5 470 MHz G ps , POWER GAIN (dB) 17 560 MHz 16.5 16 15.5 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 760 MHz 660 MHz 860 MHz VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 470 MHz VDD = 32 Vdc Figure 12. Power Gain versus Peak Output Power in Broadband Circuit 45 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 860 MHz η, DRAIN EFFICIENCY (%) 560 MHz 660 MHz 470 MHz Figure 13. Power Gain versus Peak Output Power in Broadband Circuit 40 35 η, DRAIN EFFICIENCY (%) VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 860 MHz 560 MHz 660 MHz 470 MHz 30 25 20 15 10 5 0 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 14. Drain Efficiency versus Peak Output Power in Broadband Circuit −25 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHz −35 760 MHz 560 MHz 860 MHz Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −25 VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHz −35 560 MHz 860 MHz −30 −30 −40 −40 760 MHz −45 470 MHz −50 −45 470 MHz −50 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 16. Intermodulation Distortion versus Peak Output Power in Broadband Circuit Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MRF374A RF Device Data Freescale Semiconductor 7 Zo = 4 Ω f = 845 MHz f = 845 MHz Zload Zsource f = 875 MHz f = 875 MHz VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP f MHz 845 860 875 Zsource Ω 3.33 - j2.42 3.03 - j2.39 2.73 - j3.10 Zload Ω 4.56 - j2.86 4.22 - j3.16 3.87 - j3.52 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 18. Series Equivalent Source and Load Impedance MRF374A 8 RF Device Data Freescale Semiconductor NOTES MRF374A RF Device Data Freescale Semiconductor 9 NOTES MRF374A 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS bbb M TA M B G M 2X D bbb M TA M B M L B 1 2 Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 1.135 1.145 0.225 0.235 0.135 0.178 0.210 0.220 0.055 0.065 0.004 0.006 0.900 BSC 0.077 0.087 0.220 0.250 0.260 BSC 0.643 0.657 0.638 0.650 .125 .135 0.227 0.233 0.225 0.235 0.010 BSC 0.015 BSC MILLIMETERS MIN MAX 28.80 29.10 5.72 5.97 3.43 4.52 5.33 5.59 1.40 1.65 0.11 0.15 22.86 BSC 1.96 2.21 5.59 6.35 6.60 BSC 16.33 16.69 16.20 16.50 3.175 3.43 5.77 5.92 5.715 5.97 0.254 BSC 0.381 BSC S (INSULATOR) (FLANGE) 4 PL K 3 4 R (LID) ccc M B M TA B M N (LID) ccc M (INSULATOR) bbb M M TA M B M TA M B M F C E H A (FLANGE) 5 DIM A B C D E F G H K L M N Q R S bbb ccc A T SEATING PLANE CASE 375F - 04 ISSUE E NI - 650 STYLE 1: PIN 1. 2. 3. 4. 5. DRAIN DRAIN GATE GATE SOURCE MRF374A RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF374A 1Rev. 5, 5/2006 2 Document Number: MRF374A RF Device Data Freescale Semiconductor