Freescale Semiconductor Technical Data
Document Number: MRF5S21045N Rev. 4.1, 12/2009
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications. • Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S21045NR1 MRF5S21045NBR1
2110-2170 MHz, 10 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF5S21045NR1
CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF5S21045NBR1
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value -0.5, +68 -0.5, +15 130 0.74 -65 to +150 200 Unit Vdc Vdc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW Case Temperature 79°C, 10 W CW Symbol RθJC 1.35 1.48 Value (1,2) Unit °C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF5S21045NR1 MRF5S21045NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.9 — pF VGS(th) VGS(Q) VDS(on) gfs 2 2 0.2 — — 3.8 — 3.2 3.5 5 0.35 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 13.5 24 — — — 14.5 25.5 -37 -39 -12 16.5 — -35 -37 -9 dB % dBc dBc dB
MRF5S21045NR1 MRF5S21045NBR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS R2 C1 C2 Z6 C3 C4 C5 + C6 VSUPPLY
Z13 R3 Z1 C7 C8 C9 DUT Z8 C10 C11 Z2 Z3 Z4 Z5 Z7 Z12 Z11 Z10 C12 Z9
RF INPUT
RF OUTPUT
C13
C14
C15
Z1, Z9 Z2 Z3 Z4 Z5 Z6
0.250″ x 0.080″ Microstrip 0.987″ x 0.080″ Microstrip 0.157″ x 0.080″ Microstrip 0.375″ x 0.080″ Microstrip 0.480″ x 1.000″ Microstrip 0.510″ x 0.080″ Microstrip
Z7 Z8, Z13 Z10 Z11 Z12 PCB
0.500″ x 1.000″ Microstrip 0.270″ x 0.080″ Microstrip 0.789″ x 0.080″ Microstrip 0.527″ x 0.080″ Microstrip 0.179″ x 0.080″ Microstrip Taconic TLX8-0300, 0.030″, εr = 2.55
Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values
Part C1 C2, C3, C7, C12, C13 C4, C5, C14, C15 C6 C8, C10 C9 C11 R1, R2 R3 Description 220 nF Chip Capacitor (1812) 6.8 pF 100B Chip Capacitors 6.8 μF Chip Capacitors (1812) 220 μF, 63 V Electrolytic Capacitor, Radial 1 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number 1812Y224KAT ATC100B6R8CT500XT C4532X5R1H685MT 2222-136-68221 ATC100B1R0BT500XT ATC100B1R5BT500XT ATC100B0R5BT500XT CRCW12061002FKEA CRCW120610R0FKEA Manufacturer AVX ATC TDK Vishay ATC ATC ATC Vishay Vishay
MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 3
C1 R1 R2
C2
C4 C5
C3 C6 R3
C7
C8 CUT OUT AREA
C9
C10
C11
C12
C13
C14 C15
MRF5S21045N Rev. 0
Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout
MRF5S21045NR1 MRF5S21045NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD, DRAIN EFFICIENCY (%) -10 -13 -16 -19 -22 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -8 -1 1 -14 -17 -20 IRL, INPUT RETURN LOSS (dB) 800 mA 650 mA 500 mA -5 0 -60 1 350 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements 10 Pout, OUTPUT POWER (WATTS) PEP 100 15.2 15 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 14 13.8 13.6 13.4 2060 IM3 ACPR 2080 2100 2120 2140 2160 2180 2200 IRL Gps VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD 32 28 24 20 16 -28 -32 -36 -40 -44 2220 IM3 (dBc), ACPR (dBc)
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 10 Watts
14.8 14.6 14.4 Gps, POWER GAIN (dB) 14.2 14 13.8 13.6 13.4 13.2 13 2060 IM3 ACPR 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 IRL Gps ηD VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
46 42 38 34 30 -18 -22 -26 -30 -34 2220
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts
17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 1 IDQ = 800 mA 650 mA 500 mA 350 mA 200 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-1 0 -2 0 IDQ = 200 mA -3 0 -40
Figure 5. Two-T one Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
-2 5 IMD, INTERMODULATION DISTORTION (dBc) 54 -3 0 -3 5 -4 0 -4 5 -5 0 -5 5 -60 0.1 1 10 100 TWO-T ONE SPACING (MHz) VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 5th Order 7th Order Pout, OUTPUT POWER (dBm) 3rd Order P3dB = 48.17 dBm (65.6 W) 52 50 48 46 44 42 28 VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 30 32 34 36 38 40 P1dB = 47.60 dBm (57.5 W) Ideal
Actual
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
-10 17 16 Gps, POWER GAIN (dB) -20 IM3 (dBc), ACPR (dBc) 15 14
Figure 8. Pulse CW Output Power versus Input Power
60 25_C 85_C 40 30 20 10 0 100 50
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
40
ηD
30
25_C 85_C
20
TC = -30_C Gps 85_C
85_C -30 25_C ACPR -30 _C 25_C -40
10
13 VDD = 28 Vdc IDQ = 500 mA f = 2140 MHz 12 11 0.1
-50 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 1 10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
16
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
14 Gps, POWER GAIN (dB) 32 V 12 28 V 24 V 10 20 V 8 16 V VDD = 12 V 0 10 20 30 40 50 IDQ = 500 mA f = 2140 MHz 60 70 80
6
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF5S21045NR1 MRF5S21045NBR1 6 RF Device Data Freescale Semiconductor
ηD, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
-30 _C
25_C
85_C
-30 _C TC = -30_C
IM3 85_C 25_C -30 _C
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS x AMPS2)
108
107
106 90 100
110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-T O-A VERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ $5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ $10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25
3.84 MHz Channel BW
-ACPR in 3.84 MHz BW -IM3 in 3.84 MHz BW
+ACPR in 3.84 MHz BW
+IM3 in 3.84 MHz BW
-2 0
-15
-10
-5
0
5
10
15
20
25
f, FREQUENCY (MHz)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal
Figure 14. 2‐Carrier W‐CDMA Spectrum
MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 7
Zo = 10 Ω
f = 2200 MHz
f = 2000 MHz
Zload f = 2000 MHz
Zsource
f = 2200 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz 2000 2110 2140 2170 2200 Zsource Ω 8.15 - j5.91 7.07 - j7.32 6.28 - j7.71 5.61 - j7.85 4.92 - j7.85 Zload Ω 4.78 - j5.19 4.04 - j4.14 3.81 - j3.69 3.69 - j3.39 3.57 - j3.11
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 4 Date Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 9-11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 12-14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 15 4.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN12779, p. 2
MRF5S21045NR1 MRF5S21045NBR1 RF Device Data Freescale Semiconductor 15
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MRF5S21045NR1 MRF5S21045NBR1
Document Number: MRF5S21045N
1Rev. 4.1, 12/2009 6
RF Device Data Freescale Semiconductor
