MRF5S21090HR3_08

Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21090HR3 MRF5S21090HSR3 2110-2170 MHz, 19 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF5S21090HR3 CASE 465A-06, STYLE 1 NI-780S MRF5S21090HSR3 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value --0.5, +65 --0.5, +15 269 1.5 --65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 90 W CW Case Temperature 76°C, 19 W CW Symbol RθJC 0.65 0.69 Value (1,2) Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF5S21090HR3 MRF5S21090HSR3 1 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistors LIFETIME BUY Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit LIFETIME BUY On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.9 3.9 0.25 5 3.5 — — — Vdc Vdc Vdc S Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.7 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg., f = 2112.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 12.5 24 — — — 14.5 26 --37.5 --40.5 --15 — — --35 --38 --9 dB % dBc dBc dB MRF5S21090HR3 MRF5S21090HSR3 2 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 C3 R1 VBIAS R2 C4 C5 C9 C6 Z4 Z1 Z2 C14 C1 Z5 Z3 Z6 Z7 Z14 Z8 DUT Z9 Z10 Z11 Z12 Z13 Z15 C2 Z16 Z17 Z18 Z19 Z20 Z21 C10 C7 C8 W1 C11 C12 + C13 R3 R4 VSUPPLY RF INPUT RF OUTPUT C15 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 1.0856″ x 0.080″ Microstrip 0.130″ x 0.080″ Microstrip 0.230″ x 0.080″ Microstrip 0.347″ x 0.208″ Microstrip 0.090″ x 0.208″ Microstrip 0.650″ x 0.176″ Taper 0.623″ x 0.610″ Microstrip 0.044″ x 0.881″ Microstrip 0.044″ x 0.869″ Microstrip 1.076″ x 0.446″ Microstrip 0.320″ x 0.393″ Microstrip Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 PCB 0.609″ x 0.220″ Microstrip 0.290″ x 0.106″ Microstrip 0.290″ x 0.106″ Microstrip 0.080″ x 0.025″ Microstrip 1.080″ x 0.160″ Microstrip 0.180″ x 0.080″ Microstrip 0.260″ x 0.147″ Microstrip 0.500″ x 0.080″ Microstrip 0.199″ x 0.147″ Microstrip 0.365″ x 0.080″ Microstrip Arlon GX0300--55--22, 0.03″, εr = 2.55 Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values Part Description 9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 µF Chip Capacitors 5.6 pF Chip Capacitor 5.1 pF Chip Capacitor 7.5 pF Chip Capacitor 1.2 pF Chip Capacitor 0.56 µF Chip Capacitors 1000 pF Chip Capacitor 470 µF, 35 V Electrolytic Capacitor 0.4 – 2.5 Variable Capacitors, Gigatrim 1 kΩ, 1/4 W Chip Resistor 560 kΩ, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors Wire Strap Part Number ATC100B9R1CT500XT ATC100B8R2CT500XT ATC100B2R0BT500XT CDR33BX104AKYS ATC100B5R6CT500XT ATC100B5R1CT500XT ATC100B7R5JT500XT ATC100B1R2BT500XT 700A561MT150XT ATC100B102JT500XT EKME630ELL471MK25S 27281SL CRCW12061001FKEA CRCW12065600FKEA CRCW120612R0FKEA Manufacturer ATC ATC ATC Kemet ATC ATC ATC ATC ATC ATC Nippon Chemi--Con Johanson Vishay Vishay Vishay C1 C2 C3 C4, C12 C5 C6 C7 C8 C9, C10 C11 C13 C14, C15 R1 R2 R3, R4 W1 MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY C3 C5 VGG R2 R1 R3 C4 C9 C10 C11 C6 C12 R4 W1 VDD C1 C2 C14 CUT OUT AREA C15 MRF5S21090 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout MRF5S21090HR3 MRF5S21090HSR3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 C7 C8 C13 LIFETIME BUY TYPICAL CHARACTERISTICS 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 IM3 ACPR 2100 2120 2140 2160 2180 IRL 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps ηD VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 40 ηD, DRAIN EFFICIENCY (%) 30 25 20 --20 --25 --30 --35 --40 --45 2200 IM3 (dBc), ACPR (dBc) --10 --15 --20 --25 --30 --35 5 2080 f, FREQUENCY (MHz) LIFETIME BUY Figure 3. 2-Carrier W-CDMA Broadband Performance 16 IDQ = 1200 mA 1000 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing IMD,THIRD ORDER INTERMODULATION DISTORTION (dBc) 17 --15 --20 --25 --30 --35 --40 --45 --50 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 15 850 mA IDQ = 450 mA 1200 mA 14 650 mA 13 450 mA 1000 mA 650 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP 850 mA 100 12 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 4. Two-Tone Power Gain versus Output Power Figure 5. 3rd Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) --20 --25 --30 --35 --40 --45 7th Order --50 --55 --60 0.1 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 1 TWO--TONE SPACING (MHz) 10 5th Order 3rd Order Pout , OUTPUT POWER (dBm) 57 55 53 51 P1dB = 50.47 dBm (111.4 W) Actual 49 47 45 30 32 34 36 38 40 42 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 2140 MHz Ideal P3dB = 51.17 dBm (130.9 W) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 5 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 35 G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, POWER (WATTS) W--CDMA Gps IM3 ACPR VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W--CDMA, 10 MHz @ 3.84 MHz Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD -- 15 MTTF FACTOR (HOURS x AMPS2) --20 IM3 (dBc), ACPR (dBc) --25 --30 --35 --40 --45 --50 --55 109 108 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature W-CDMA TEST SIGNAL --20 --30 10 1 (dB) --40 --50 --60 --70 --80 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 --90 --100 --110 --120 --25 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --20 --15 --10 --5 0 5 10 100 3.84 MHz Channel BW 0.1 0.01 0.001 .0001 +IM3 in 3.84 MHz BW 15 20 25 PEAK--TO--AVERAGE (dB) f, FREQUENCY (MHz) Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. 2-Carrier W-CDMA Spectrum MRF5S21090HR3 MRF5S21090HSR3 6 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY f = 2200 MHz Zload f = 2100 MHz Zo = 10 f = 2200 MHz f = 2100 MHz Zsource VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg. f MHz 2100 2120 2160 2200 Zsource 3.4 -- j5.1 3.2 -- j5.4 3.0 -- j4.4 3.0 -- j4.0 Zload 2.4 -- j2.0 2.2 -- j2.1 2.1 -- j1.9 1.8 -- j1.6 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 7 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H C (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc TA M B M aaa M TA M B M F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465-06 ISSUE G NI-780 MRF5S21090HR3 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE T SEATING PLANE CASE 465A-06 ISSUE H NI-780S MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 3 Date Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 9 MRF5S21090HR3 MRF5S21090HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF5S21090HR3 MRF5S21090HSR3 Document Number: MRF5S21090H 1Rev. 3, 10/2008 0 RF Device Data Freescale Semiconductor