MRF5S9150HR3_09

Freescale Semiconductor Technical Data Document Number: MRF5S9150H-1 Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 28.4% ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 880 MHz, 33 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET ARCHIVE INFORMATION CASE 465-06, STYLE 1 NI-780 Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value -0.5, +68 -0.5, +15 -65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Case Temperature 76°C, 33 W CW Symbol RθJC 0.34 0.34 Value (1) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) III (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2009. All rights reserved. MRF5S9150HR3 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3.15 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 3.1 91.5 — — pF pF VGS(th) VGS(Q) VDS(on) 2 3 0.1 3 4 0.2 4 5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N-CDMA, f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 18.5 26.5 — — 19.7 28.4 - 46.8 -20 21.5 — - 45 -9 dB % dBc dB MRF5S9150HR3 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VBIAS + C14 B1 VSUPPLY R2 R1 C16 C17 L1 Z9 C8 C10 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C2 C7 C3 C4 C5 DUT C9 L3 C11 C12 C13 Z17 C18 C19 L2 RF OUTPUT C20 C21 + C22 C15 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 C6 Z8 VSUPPLY + C23 C24 C25 C26 C27 ARCHIVE INFORMATION Z1 Z2 Z3, Z17 Z4 Z5 Z6 Z7 Z8 Z9 0.416″ x 0.080″ Microstrip 0.851″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip 0.055″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.630″ Taper 0.077″ x 0.630″ Microstrip 0.221″ x 0.630″ Microstrip 0.193″ x 0.630″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.105″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.236″ x 0.220″ Microstrip 0.195″ x 0.220″ Microstrip 0.059″ x 0.220″ Microstrip 0.989″ x 0.080″ Microstrip 0.284″ x 0.080″ Microstrip Arlon GX-0300-55-22, 0.030″, εr = 2.55 Figure 1. MRF5S9150HR3 Test Circuit Schematic Table 5. MRF5S9150HR3 Test Circuit Component Designations and Values Part B1 C1, C2, C17 C3, C12 C4 C5, C6 C7, C8 C9, C10 C11 C13 C14 C15 C16 C18, C23 C19, C20, C21, C24, C25, C26 C22, C27 L1, L2, L3 R1 R2 Description Small Ferrite Bead 47 pF Chip Capacitors 0.8-8.0 pF Variable Capacitors, Gigatrim 13 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6-4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 μF, 50 V Tantalum Capacitor 20K pF Chip Capacitor 180 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 12.5 nH Inductors 180 kΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number 2743019447 ATC100B470JT500XT 27291SL ATC100B130JT500XT ATC100B150JT500XT ATC100B120JT500XT ATC100B4R3JT500XT ATC100B8R2JT500XT 27271SL ATC100B220JT500XT T491C105K050AT CDR35BP203AKYM ATC100B181JT500XT GRM55DR61H106KA88B EMVY630GTR471MMH0S A04T CRCW12061803FKEA CRCW120610R0FKEA Manufacturer Fair Rite ATC Johanson ATC ATC ATC ATC ATC Johanson ATC Kemit Kemit ATC Murata Nippon Chemi-Con Coilcraft Vishay Vishay MRF5S9150HR3 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION C14 900 MHz Rev. 3 C16 C15 R2 R1 C17 C5 L1 C1 CUT OUT AREA C7 C9 L2 L3 C11 C12 C8 C10 C23 C18 C19 C22 B1 C20 C21 ARCHIVE INFORMATION C6 C24 C25 C26 C27 Figure 2. MRF5S9150HR3 Test Circuit Component Layout MRF5S9150HR3 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION C3 C4 C13 C2 TYPICAL CHARACTERISTICS 20 19.6 19.2 Gps, POWER GAIN (dB) 18.8 18.4 18 17.6 17.2 16.8 16.4 ALT1 840 850 860 870 880 890 900 910 ACPR Gps ηD 32 30 28 26 24 -40 -45 -50 -55 -60 -65 920 ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%) -3 -8 -13 -18 -23 -28 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 33 W (Avg.) IDQ = 1500 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) IRL ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 33 Watts Avg. 19.5 19 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16 15.5 15 14.5 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 66 W (Avg.) IDQ = 1500 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ηD Gps 43 41 39 37 35 -35 -40 -45 -50 -55 -60 920 ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%) -3 -8 -13 -18 -23 -28 Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 66 Watts Avg. 22 21 Gps, POWER GAIN (dB) 20 19 1125 mA 18 17 16 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 750 mA VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IDQ = 2250 mA 1875 mA 1500 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 -30 IDQ = 750 mA -40 -50 1875 mA -60 1125 mA -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1500 mA VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 2250 mA Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S9150HR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 16 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS -1 0 IMD, INTERMODULATION DISTORTION (dBc) -2 0 -3 0 -4 0 3rd Order -5 0 -6 0 5th Order -7 0 -8 0 7th Order -90 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc, IDQ = 1500 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) 0 -1 0 -2 0 -3 0 3rd Order -4 0 5th Order -5 0 -60 0.1 1 10 100 TWO-T ONE SPACING (MHz) 7th Order VDD = 28 Vdc, Pout = 150 W (PEP) IDQ = 1500 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz ARCHIVE INFORMATION Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 61 P6dB = 54.52 dBm (283.14 W) 59 Pout, OUTPUT POWER (dBm) 57 55 53 51 49 47 45 25 27 29 31 P3dB = 53.84 dBm (242.1 W) P1dB = 52.87 dBm (193.64 W) Ideal Actual VDD = 28 Vdc, IDQ = 1500 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 33 35 37 39 41 Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) 60 50 40 85_C 30 20 ALT1 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Gps ACPR ηD VDD = 28 Vdc, IDQ = 1500 mA f = 880 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) -20 -30 _C 85_C 25_C -30 _C 25_C -30 -40 -50 TC = -30 _C 85_C 25_C -60 -70 -80 300 Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S9150HR3 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS 23 22 TC = -30 _C Gps, POWER GAIN (dB) 21 20 19 18 17 25_C 85_C VDD = 28 Vdc IDQ = 1500 mA f = 880 MHz Gps -30 _C 70 60 85_C 50 40 30 ηD 20 10 0 ARCHIVE INFORMATION ηD, DRAIN EFFICIENCY (%) 16 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21 IDQ = 1500 mA f = 880 MHz 20 Gps, POWER GAIN (dB) 19 18 17 16 V VDD = 12 V 0 50 100 20 V 24 V 28 V 32 V 16 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF5S9150HR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION N-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0 2 4 6 8 10 (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 ARCHIVE INFORMATION PEAK-T O-A VERAGE (dB) Figure 14. Single-Carrier CCDF N-CDMA -1 10 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single-Carrier N-CDMA Spectrum MRF5S9150HR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 0.0001 1.2288 MHz Channel BW . ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -AL T1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .... . ...... .... ....... .. ........ -ACPR in 30 kHz . . .. ... . +ACPR in 30 kHz .............. ... .... .......... ............... . ......... .... .... ........ ......... Integrated BW Integrated BW ............ . . ...... ... . .. .. ...... ....... ... f = 910 MHz Zload f = 850 MHz Zo = 5 Ω Zsource f = 850 MHz ARCHIVE INFORMATION f = 910 MHz VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. f MHz 850 865 880 895 910 Zsource W 3.61 - j2.30 2.85 - j2.54 2.13 - j2.47 1.53 - j2.27 1.02 - j1.90 Zload W 1.12 + j0.09 1.24 + j0.22 1.31 + j0.36 1.46 + j0.48 1.61 + j0.53 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF5S9150HR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) ARCHIVE INFORMATION H C F E A A (FLANGE) SEATING PLANE T STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465-06 ISSUE G NI-780 MRF5S9150HR3 MRF5S9150HR3 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ccc TA M B M aaa M TA M B M REVISION HISTORY The following table summarizes revisions to this document. Revision 2 Date Dec. 2009 Description • Data sheet revised to reflect part status change, p. 1, 3-4, including use of applicable overlay. • Data sheet archived. Part no longer manufactured. See MRF5S9150H-2 for MRF5S9150HS part. • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Revision History, p. 11 ARCHIVE INFORMATION MRF5S9150HR3 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION How to Reach Us: Home Page: www.freescale.com ARCHIVE INFORMATION USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2009. All rights reserved. MRF5S9150HR3 Document Number: MRF5S9150H-1 1Rev. 2, 12/2009 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Web Support: http://www.freescale.com/support