MRF6S18060NR1

Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz) Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S18060NR1 MRF6S18060NBR1 1800- 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 77°C, 25 W CW Symbol RθJC Value (2,3) 0.81 0.95 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRF6S18060NR1 MRF6S18060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDD = 26 Vdc, ID = 600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1 2 — 2 2.8 0.24 3 4 — Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W CW, f = 1990 MHz Gps ηD IRL P1dB 14 48 — 60 15 50 - 12 65 17 — -9 — dB % dB W Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 450 mA, Pout = 25 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz, EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps ηD EVM SR1 SR2 — — — — — 15.5 32 2 - 62 - 76 — — — — — dB % % rms dBc dBc Typical CW Performances (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW 1. Part is internally matched both on input and output. Gps ηD IRL P1dB — — — — 15 50 - 12 65 — — — — dB % dB W MRF6S18060NR1 MRF6S18060NBR1 2 RF Device Data Freescale Semiconductor VBIAS R1 R2 C1 Z6 Z13 R3 RF INPUT Z8 Z1 C3 Z2 Z3 C5 C6 Z4 Z5 Z7 C8 DUT Z9 Z10 C7 Z11 C4 C2 C9 C10 + C11 VSUPPLY Z12 RF OUTPUT Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.950″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.315″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12 Z13 PCB 0.485″ x 1.000″ Microstrip 0.500″ x 0.083″ Microstrip 0.895″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.200″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF6S18060NR1(NBR1) Test Circuit Schematic — 1900 MHz Table 6. MRF6S18060NR1(NBR1) Test Circuit Component Designations and Values — 1900 MHz Part C1, C2, C3, C4 C5 C6 C7, C8 C9, C10 C11 R1, R2 R3 Description 6.8 pF Chip Capacitors 1.5 pF Chip Capacitor 1.8 pF Chip Capacitor 1 pF Chip Capacitors 10 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number ATC100B6R8CT500XT ATC100B1R5BT500XT ATC100B1R8BT500XT ATC100B1R0BT500XT C5750X5R1H106MT 2222 - 136 - 68221 CRCW12061002FKEA CRCW120610R0FKEA Manufacturer ATC ATC ATC ATC TDK Vishay Vishay Vishay MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 3 C11 VGS R1 R2 C1 C2 C9 R3 C5 CUT OUT AREA C7 C10 VDS C3 C6 C8 C4 MRF6S18060N/NB Rev. 0 Figure 2. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1900 MHz MRF6S18060NR1 MRF6S18060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1900 MHz 18 57 55 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 16 Gps 15 IRL 14 VDD = 26 Vdc IDQ = 600 mA 13 1900 1920 1940 1960 1980 2000 53 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) 17 Gps, POWER GAIN (dB) ηD −5 −10 51 −15 49 −20 47 2020 −25 f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts 18 42 40 0 17 Gps, POWER GAIN (dB) ηD −5 16 Gps 15 IRL VDD = 26 Vdc IDQ = 600 mA 13 1900 1920 1940 1960 1980 2000 38 −10 36 −15 14 34 −20 32 2020 −25 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts 17 IDQ = 900 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 16 750 mA 600 mA 15 450 mA 14 300 mA 13 VDD = 26 Vdc f = 1960 MHz 12 1 10 Pout, OUTPUT POWER (WATTS) 100 12 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) CW 16 17 IDQ = 600 mA f = 1960 MHz 15 VDD = 32 V 14 26 V 13 24 V Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 1900 MHz 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 26 Vdc IDQ = 600 mA f = 1960 MHz ηD 85_C TC = −30_C 25_C 85_C 40 30 20 10 0 100 Gps 25_C EVM, ERROR VECTOR MAGNITUDE (% rms) −30_C 70 60 50 ηD, DRAIN EFFICIENCY (%) 4 3.5 3 2.5 25 W Avg. 2 1.5 1 1900 10 W Avg. VDD = 26 Vdc IDQ = 450 mA Pout = 35 W Avg. 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz) Figure 7. Power Gain and Drain Efficiency versus CW Output Power 12 EVM, ERROR VECTOR MAGNITUDE (% rms) 10 8 6 85_C 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. −30_C EVM 25_C 20 10 0 100 VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation 60 50 85_C 40 ηD 30 ηD, DRAIN EFFICIENCY (%) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) −55 Figure 8. EVM versus Frequency TC = −30_C, 25_C Pout = 35 W Avg. SR @ 400 kHz 25 W Avg. −60 −65 10 W Avg. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation SR @ 600 kHz 35 W Avg. 25 W Avg. 10 W Avg. −70 −75 −80 1920 1940 1960 f, FREQUENCY (MHz) 1980 2000 Figure 9. EVM and Drain Efficiency versus Output Power −45 SPECTRAL REGROWTH @ 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz (dBc) −50 −55 −60 −65 −70 −75 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. 85_C 25_C TC = −30_C VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation −55 −60 −65 Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation TC = 85_C 25_C −70 −30_C −75 −80 −85 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. Figure 11. Spectral Regrowth at 400 kHz versus Output Power Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF6S18060NR1 MRF6S18060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 107 MTTF (HOURS) 106 105 104 90 110 130 150 170 190 210 230 250 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 60 W CW, and ηD = 50%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature GSM TEST SIGNAL −10 −20 −30 −40 −50 (dB) −60 −70 −80 −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 14. EDGE Spectrum MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 1930 MHz Zsource f = 1990 MHz f = 1930 MHz f = 1990 MHz Zload VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W CW f MHz 1930 1960 1990 Zsource Ω 8.00 - j6.48 7.57 - j6.82 7.06 - j7.06 Zload Ω 2.83 - j5.13 2.63 - j4.84 2.44 - j4.54 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance — 1900 MHz MRF6S18060NR1 MRF6S18060NBR1 8 RF Device Data Freescale Semiconductor VBIAS R1 R2 C1 Z6 C2 C10 C11 + C12 VSUPPLY Z14 R3 RF INPUT Z8 C6 Z1 C3 Z2 Z3 C5 C7 Z4 Z5 Z7 C8 DUT C9 C4 Z9 Z10 Z11 Z12 Z13 RF OUTPUT Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.320″ x 0.083″ Microstrip 0.660″ x 0.083″ Microstrip 0.535″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.860″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12* Z13 Z14 PCB 0.485″ x 1.000″ Microstrip 0.420″ x 0.083″ Microstrip 0.230″ x 0.083″ Microstrip 0.745″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.640″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 16. MRF6S18060NR1(NBR1) Test Circuit Schematic — 1800 MHz Table 7. MRF6S18060NR1(NBR1) Test Circuit Component Designations and Values — 1800 MHz Part C1, C2, C3, C4 C5 C6, C9 C7 C8 C10, C11 C12 R1, R2 R3 Description 6.8 pF Chip Capacitors 0.8 pF Chip Capacitor 0.5 pF Chip Capacitors 2.2 pF Chip Capacitor 1.5 pF Chip Capacitor 10 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number ATC100B6R8CT500XT ATC100B0R8BT500XT ATC100B0R5BT500XT ATC100B2R2BT500XT ATC100B1R5BT500XT C5750X5R1H106MT 2222 - 136 - 68221 CRCW12061002FKEA CRCW120610R0FKEA Manufacturer ATC ATC ATC ATC ATC TDK Vishay Vishay Vishay MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 9 VGS R1 R2 C1 C2 C10 R3 C6 CUT OUT AREA C12 VDS C11 C3 C5 C7 C8 C9 C4 MRF6S18060N/NB Rev. 0 Figure 17. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1800 MHz MRF6S18060NR1 MRF6S18060NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1800 MHz 17 ηD ηD, DRAIN EFFICIENCY (%) 16 Gps, POWER GAIN (dB) Gps 55 −4 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 57 0 15 53 −8 14 IRL VDD = 26 Vdc IDQ = 600 mA 12 1780 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) 51 −12 13 49 47 1920 −16 −20 Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts 17 Gps ηD, DRAIN EFFICIENCY (%) 41 43 0 −4 16 Gps, POWER GAIN (dB) 15 ηD 39 −8 14 IRL VDD = 26 Vdc IDQ = 600 mA 12 1760 1780 1800 1820 1840 1860 1880 1900 37 −12 13 35 33 1920 −16 −20 f, FREQUENCY (MHz) Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts 4.5 EVM, ERROR VECTOR MAGNITUDE (% rms) 4 3.5 3 2.5 2 25 W Avg. 1.5 1 0.5 1780 1800 15 W Avg. VDD = 26 Vdc IDQ = 450 mA Pout = 35 W Avg. 10 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz EDGE Modulation 50 EVM, ERROR VECTOR MAGNITUDE (% rms) ηD 30 6 4 TC = 25_C 20 2 0 1 10 EVM 10 0 100 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. Figure 20. EVM versus Frequency Figure 21. EVM and Drain Efficiency versus Output Power MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 11 ηD, DRAIN EFFICIENCY (%) 8 40 TYPICAL CHARACTERISTICS — 1800 MHz SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) −50 Pout = 35 W Avg. −55 −60 25 W Avg. −65 15 W Avg. −70 35 W Avg. −75 −80 1780 25 W Avg. SR @ 600 kHz 10 W Avg. VDD = 26 Vdc IDQ = 450 mA EDGE Modulation SR @ 400 kHz 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −45 SPECTRAL REGROWTH @ 400 kHz (dBc) −50 TC = 25_C −55 −60 −65 −70 −75 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation SPECTRAL REGROWTH @ 600 kHz (dBc) −60 −65 TC = 25_C −70 −75 VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz EDGE Modulation 0 10 20 30 40 50 60 −80 −85 Pout, OUTPUT POWER (WATTS) AVG. Figure 23. Spectral Regrowth at 400 kHz versus Output Power Figure 24. Spectral Regrowth at 600 kHz versus Output Power MRF6S18060NR1 MRF6S18060NBR1 12 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1880 MHz f = 1805 MHz Zload f = 1880 MHz f = 1805 MHz Zsource VDD = 26 Vdc, IDQ = 600 mA, Pout = 65 W CW f MHz 1805 1840 1880 Zsource Ω 4.16 - j7.56 3.89 - j7.40 3.56 - j7.21 Zload Ω 3.29 - j4.91 3.10 - j4.69 2.88 - j4.45 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 25. Series Equivalent Source and Load Impedance — 1800 MHz MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MRF6S18060NR1 MRF6S18060NBR1 14 RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S18060NR1 MRF6S18060NBR1 16 RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 17 MRF6S18060NR1 MRF6S18060NBR1 18 RF Device Data Freescale Semiconductor MRF6S18060NR1 MRF6S18060NBR1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 4 Date Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 6, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 5 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 14 - 16. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 17 - 19. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 20 MRF6S18060NR1 MRF6S18060NBR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF6S18060NR1 MRF6S18060NBR1 Document Number: RF Device Data MRF6S18060N Rev. 4, 12/2008 Freescale Semiconductor 21