MRF6S19100NR1

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S19100NR1 MRF6S19100NBR1 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S19100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S19100NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 287 1.64 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 23 W CW Symbol RθJC Value (1,2) 0.61 0.65 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S19100NR1 MRF6S19100NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.8 0.24 5.3 3 4 — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 13 24 - 47 - 60 — 14.5 25.5 - 37 - 51 - 12 16 36 - 35 - 48 - 10 dB % dBc dBc dB MRF6S19100NR1 MRF6S19100NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS + C1 R2 C2 C3 Z5 Z12 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z11 DUT VSUPPLY C9 C10 C11 Z6 Z7 Z8 Z9 C8 Z10 C4 C5 C6 RF OUTPUT VSUPPLY Z1, Z10 Z2 Z3 Z4 Z5 Z6 0.743″ x 0.084″ Microstrip 0.818″ x 0.084″ Microstrip 0.165″ x 0.386″ Microstrip 0.505″ x 0.800″ Microstrip 0.323″ x 0.040″ Microstrip 0.160″ x 0.880″ Microstrip Z7 Z8 Z9 Z11, Z12 PCB 0.319″ x 0.880″ Microstrip 0.355″ x 0.215″ Microstrip 0.661″ x 0.084″ Microstrip 1.328″ x 0.120″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values Part C1 C2 C3, C7 C4, C8, C9 C5, C6, C10, C11 R1 R2 R3 Description 10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.1 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kΩ, 1/4 W Chip Resistor (1206) 10 kΩ, 1/4 W Chip Resistor (1206) 10 Ω, 1/4 W Chip Resistor (1206) 600B5R1BT250XT 600B9R1BT250XT GRM55DR61H106KA88L ATC ATC Murata Part Number T491D106K035AS Manufacturer Kemet MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 3 R2 C2 C3 C4 R1 C1 R3 C5 C6 CUT OUT AREA C7 C8 C10 C11 MRF6S19100N/NB, Rev. 5 C9 Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout MRF6S19100NR1 MRF6S19100NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −12 −16 −20 −24 −28 −32 −36 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −15 −20 −25 −30 −35 −40 1425 mA IDQ = 475 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 15.8 15.7 15.6 Gps, POWER GAIN (dB) 15.5 15.4 15.3 15.2 15.1 15 14.9 ACPR IM3 IRL Gps VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 27 ηD 26.5 26 25.5 25 −30 −36 −42 −48 −54 −60 14.8 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg. 15.4 15.3 15.2 Gps, POWER GAIN (dB) 15.1 15 14.9 14.8 14.7 14.6 14.5 ACPR IRL IM3 Gps ηD VDD = 28 Vdc, Pout = 40 W (Avg.) IDQ = 950 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 36 35.5 35 34.5 34 −25 −30 −35 −40 −45 −50 14.4 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg. 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 1 1190 mA 950 mA 710 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1425 mA −10 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −30 −40 475 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 −50 710 mA −60 1 10 950 mA 1190 mA 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS −10 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 59 Ideal 57 Pout, OUTPUT POWER (dBm) P3dB = 52.156 dBm (164.29 W) 55 53 51 49 47 45 1 10 100 30 32 34 36 38 40 42 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz P1dB = 51.13 dBm (129.72 W) Actual −20 −30 3rd Order −40 5th Order −50 7th Order −60 0.1 Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 40 30 −30_C −40 ηD 20 Gps ACPR 85_C −30_C 25_C −50 10 −60 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 −70 200 Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 950 mA f = 1960 MHz ηD TC = − 30_C 25_C 85_C Gps −30_C 25_C 85_C 70 60 Gps, POWER GAIN (dB) 50 40 30 20 10 0 300 ηD, DRAIN EFFICIENCY (%) 16 15 14 13 12 11 10 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 20 V 24 V 32 V 28 V 16 V IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 950 mA TC = 85_C f1 = 1958.75 MHz, f2 = 1961.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel IM3 Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −20 −30_C 85_C −30 25_C IDQ = 950 mA f = 1960 MHz Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100NR1 MRF6S19100NBR1 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS X AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −7.5 −IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW +IM3 in 1.2288 MHz Integrated BW −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW Figure 13. 2 - Carrier CCDF N - CDMA −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω Zload f = 1930 MHz f = 1990 MHz f = 1990 MHz f = 1930 MHz Zsource VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg. f MHz 1930 1960 1990 Zsource Ω 2.51 - j4.80 2.31 - j4.54 2.12 - j4.20 Zload Ω 1.74 - j3.11 1.67 - j2.85 1.63 - j2.55 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19100NR1 MRF6S19100NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19100NR1 MRF6S19100NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e 4X aaa M b1 CA D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6S19100NR1 MRF6S19100NBR1 12 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S19100NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 13 MRF6S19100NR1 MRF6S19100NBR1 14 RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19100NR1 MRF6S19100NBR1 1Rev. 1, 5/2006 6 Document Number: MRF6S19100N RF Device Data Freescale Semiconductor