MRF6S19140HR3_07

Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19140HR3 MRF6S19140HSR3 1930 - 1990 MHz, 29 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S19140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S19140HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 77°C, 29 W CW Symbol RθJC Value (2,3) 0.33 0.38 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2007. All rights reserved. MRF6S19140HR3 MRF6S19140HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 15 26 — — — 16 27.5 - 37 - 51 - 15 18 — - 35 - 48 -9 dB % dBc dBc dB MRF6S19140HR3 MRF6S19140HSR3 2 RF Device Data Freescale Semiconductor + VBIAS R3 + C13 R1 R5 C7 C3 Z5 Z6 Z7 Z8 Z9 B1 C5 C9 C11 C15 VSUPPLY Z10 C2 RF OUTPUT RF INPUT Z1 C1 Z2 Z3 Z4 DUT VBIAS R4 + C14 R2 R6 C8 C4 B2 C6 C10 C12 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 0.864″ 1.373″ 0.282″ 0.103″ 0.094″ 0.399″ x 0.082″ x 0.082″ x 0.900″ x 0.900″ x 1.055″ x 1.055″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 PCB 0.115″ x 0.569″ Microstrip 0.191″ x 0.289″ Microstrip 0.681″ x 0.081″ Microstrip 1.140″ x 0.081″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.5 Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2 C3, C4, C5, C6 C7, C8, C9, C10, C11, C12 C13, C14 C15 R1, R2 R3, R4 R5, R6 Description Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 560 kΩ, 1/4 W Chip Resistors 1.0 kΩ, 1/4 W Chip Resistors 12 Ω, 1/4 W Chip Resistors Part Number 2743019447 ATC100B390JT500XT ATC100B9R1CT500XT GRM55DR61H106KA88B EMVY500ADA470MF80G ESMG630ELL471MK205 CRCW12065600FKTA CRCW12061001FKTA CRCW120612R0FKTA Manufacturer Fair - Rite ATC ATC Murata Nippon United Chemi - Con Vishay Vishay Vishay MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 3 6S19140 C13 R3 B1 R5 C3 C5 C9 C11 R1 C1 C7 C15 C2 CUT OUT AREA C4 C6 © Motorola, Inc. 2002 DS1464 R2 C8 R4 C14 B2 R6 C10 C12 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout MRF6S19140HR3 MRF6S19140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD Gps VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1150 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD, DRAIN EFFICIENCY (%) −10 −12 −14 −16 −18 −20 −22 −24 −26 −28 −30 ηD, DRAIN EFFICIENCY (%) −10 −12 −14 −16 −18 −20 −22 −24 −26 −28 −30 900 mA −30 600 mA −40 IDQ = 1700 mA 1500 mA 100 1000 10 IRL, INPUT RETURN LOSS (dB) IM3 (dBc), ACPR (dBc) IRL, INPUT RETURN LOSS (dB) IM3 (dBc), ACPR (dBc) 20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 4 2 0 1910 1920 1930 1940 1950 1960 1970 1980 1990 ACPR IM3 IRL 40 30 20 10 0 −10 −20 −40 −60 −80 −100 2000 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg. 18 16 Gps, POWER GAIN (dB) 14 12 10 8 ηD Gps VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 50 40 30 20 0 −20 IRL IM3 6 4 2 1910 −40 −60 ACPR 1920 1930 1940 1950 1960 1970 1980 1990 −80 2000 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 75 Watts Avg. 18 17 Gps, POWER GAIN (dB) 1500 mA 16 15 14 13 12 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1150 mA 900 mA 600 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1700 mA −10 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 −50 1150 mA −60 1 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 −30 −40 −50 −60 0.1 7th Order 3rd Order 5th Order VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1150 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 58 57 56 55 54 53 52 51 50 49 48 47 46 VDD = 28 Vdc, IDQ = 1150 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 P3dB = 53.1 dBm (204 W) Ideal Pout, OUTPUT POWER (dBm) P1dB = 52.3 dBm (171 W) Actual 1 10 100 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 1150 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) TC = 25°C IM3 −20 40 −30 IM3 (dBc), ACPR (dBc) ηD −40 ACPR −50 Gps 30 20 10 −60 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. −70 100 Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 28 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 60 Gps, POWER GAIN (dB) 50 40 30 20 10 0 300 ηD, DRAIN EFFICIENCY (%) 18 17 16 15 14 13 12 11 10 9 8 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW IDQ = 1150 mA f = 1960 MHz 24 V 28 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19140HR3 MRF6S19140HSR3 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 10 −20 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) −30 −40 −50 −60 −70 −80 −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 0 −10 1.2288 MHz Channel BW Figure 13. 2 - Carrier CCDF N - CDMA f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Zload f = 1900 MHz Zo = 5 Ω Zsource f = 1900 MHz f = 2020 MHz VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg. f MHz 1900 1930 1960 1990 2020 Zsource Ω 2.27 - j3.95 2.00 - j4.24 1.72 - j3.96 1.80 - j3.51 1.69 - j3.17 Zload Ω 1.13 - j0.67 1.11 - j0.60 1.07 - j0.46 1.06 - j0.30 1.01 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19140HR3 MRF6S19140HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF6S19140HR3 B 1 (FLANGE) B K D TA 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M bbb M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF M bbb ccc H C M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465C - 02 ISSUE D NI - 880S MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 5 Date May 2007 Description • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet as functionality is standard, p. 1 • Added “Optimized for Doherty Applications” bullet to Features section, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S19140HR3 MRF6S19140HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004-2007. All rights reserved. MRF6S19140HR3 MRF6S19140HSR3 Document Number: RF Device Data MRF6S19140H Rev. 5, 5/2007 Freescale Semiconductor 11