MRF6S21050LR3

Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF6S21050LR3 MRF6S21050LSR3 2110 - 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 151 0.86 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 50 W CW Case Temperature 76°C, 12 W CW Symbol RθJC Value (1,2) 1.16 1.28 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 450 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.75 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.9 0.21 5.3 3 4 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps ηD IM3 ACPR IRL 15 26 — — — 16 27.7 - 37 - 40 - 15 18 — - 35 - 38 -9 dB % dBc dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched both on input and output. MRF6S21050LR3 MRF6S21050LSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS + C7 + C6 C5 R1 VSUPPLY C4 C3 C8 C9 C10 C11 + C12 + C13 + C14 Z6 RF INPUT Z7 Z8 Z9 C2 Z10 RF OUTPUT Z1 Z2 C1 Z3 Z4 Z5 DUT Z1, Z10 Z2 Z3 Z4 Z5 0.750″ x 0.084″ Microstrip 0.905″ x 0.084″ Microstrip 0.435″ x 0.173″ Microstrip 0.073″ x 0.333″ Microstrip 0.070″ x 0.333″ Microstrip Z6 Z7 Z8 Z9 PCB 0.113″ x 0.590″ Microstrip 0.325″ x 0.590″ Microstrip 0.214″ x 0.150″ Microstrip 0.723″ x 0.084″ Microstrip Arlon GX - 0300- 5022, 0.030″, εr = 2.5 Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values Part B1 C1, C2, C3, C8 C4 C5, C11 C6 C7 C9, C10 C12 C13, C14 R1 Description Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 μF Chip Capacitor (1825) 2.2 μF, 50 V Chip Capacitors (1825) 22 μF, 25 V Tantalum Capacitor 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors (2220) 47 μF, 50 V Electrolytic Capacitor 220 μF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resistor (1210) Part Number 2743019447 100B6R8CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B MVK50VC47RM8X10TP MVY50VC221MJ10TP ERJ - 14YJ3R3U Manufacturer Fair- Rite ATC Kemet Kemet Panasonic TE Series Kemet Murata Nippon Nippon Dale/Vishay MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 3 C11 C10 C3 B1 C12 C13 R1 C8 C9 C4, C5* C7 C6 C14 CUT OUT AREA C1 C2 MRF6S21050L Rev. 1 * C4 on bottom, C5 on top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.4 16.3 16.2 Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 11.5 W (Avg.) 16.1 I = 450 mA, 2−Carrier W−CDMA DQ 16 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% 15.9 Probability (CCDF) 15.8 15.7 15.6 15.5 ACPR IM3 Gps ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −20 −30 −40 −50 −60 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −15 −20 −25 −30 −35 675 mA −30 IDQ = 225 mA −40 335 mA 450 mA −60 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 560 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) ηD 30 28 26 24 22 −32 IRL −34 −36 −38 −40 15.4 −42 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts 16 15.9 15.8 Gps, POWER GAIN (dB) 15.7 15.6 15.5 15.4 15.3 15.2 15.1 IM3 IRL VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 450 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD 41 40 39 38 Gps 37 −24 −26 −28 −30 −32 ACPR 15 −34 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts 17.5 17 560 mA Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 225 mA 14 13.5 VDD = 28 Vdc, f1 = 2135 MHz f2 = 2145 MHz, Two−Tone Measurements, 10 MHz Tone Spacing 450 mA 335 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 675 mA −10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −50 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 5th Order −40 7th Order 52 51 Pout, OUTPUT POWER (dBm) 50 P1dB = 47.89 dBm (61.52 W) 49 48 47 46 45 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 29 30 31 32 33 34 35 36 Actual P3dB = 48.66 dBm (73.43 W) Ideal −20 −30 −50 −60 0.01 0.1 1 TWO−TONE SPACING (MHz) 10 100 44 28 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 Figure 8. Pulse CW Output Power versus Input Power −20 −35 ACPR Gps −40 −45 −50 ηD 0.2 1 10 30 −55 −60 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA 20 15 10 5 0 Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16.5 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 13 3 10 Pout, OUTPUT POWER (WATTS) CW 100 ηD VDD = 28 Vdc IDQ = 450 mA f = 2140 MHz Gps 64 56 ηD, DRAIN EFFICIENCY (%) 48 40 32 24 16 8 Gps, POWER GAIN (dB) 17 16.5 16 15.5 15 14.5 14 13.5 13 12.5 12 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) CW 16 V VDD = 12 V 20 V 24 V 28 V 32 V IDQ = 450 mA f = 2140 MHz Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21050LR3 MRF6S21050LSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −25 −30 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) +20 +30 0 −10 −20 −30 −40 −50 −60 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −15 −10 −5 0 5 10 3.84 MHz Channel BW W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +IM3 in 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 7 f = 2200 MHz Zload f = 2080 MHz f = 2200 MHz Zo = 25 Ω Zsource f = 2080 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg. f MHz 2080 2090 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 Zsource Ω 4.09 3.74 3.95 4.44 5.03 5.55 5.76 5.57 4.86 4.04 3.69 3.91 4.41 j14.65 j13.95 j13.36 j13.00 j12.89 j13.05 j13.26 j13.70 j13.92 j13.61 j12.91 j12.44 j12.32 Zload Ω 2.36 2.25 2.40 2.68 2.99 3.26 3.32 3.20 2.82 2.44 2.33 2.49 2.77 j7.52 j7.11 j6.78 j6.59 j6.52 j6.64 j6.68 j6.87 j6.93 j6.70 j6.29 j6.05 j5.96 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S21050LR3 MRF6S21050LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF6S21050LR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF6S21050LSR3 MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 1Rev. 1, 5/2006 2 Document Number: MRF6S21050L RF Device Data Freescale Semiconductor