MRF6S21050LR3_08

Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF6S21050LR3 MRF6S21050LSR3 2110 - 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 50 W CW Case Temperature 76°C, 12 W CW Symbol RθJC Value (2,3) 1.16 1.28 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.1 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.75 — pF VGS(th) VGS(Q) VDS(on) 1 2 — 2 2.9 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f = 2157 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 15 26 — — — 16 27.7 - 37 - 40 - 15 18 — - 35 - 38 -9 dB % dBc dBc dB MRF6S21050LR3 MRF6S21050LSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS + C7 + C6 C5 R1 VSUPPLY C4 C3 C8 C9 C10 C11 + C12 + C13 + C14 Z6 RF INPUT Z7 Z8 Z9 C2 Z10 RF OUTPUT Z1 Z2 C1 Z3 Z4 Z5 DUT Z1, Z10 Z2 Z3 Z4 Z5 0.750″ 0.905″ 0.435″ 0.073″ 0.070″ x 0.084″ x 0.084″ x 0.173″ x 0.333″ x 0.333″ Microstrip Microstrip Microstrip Microstrip Microstrip Z6 Z7 Z8 Z9 PCB 0.113″ x 0.590″ Microstrip 0.325″ x 0.590″ Microstrip 0.214″ x 0.150″ Microstrip 0.723″ x 0.084″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values Part B1 C1, C2, C3, C8 C4 C5, C11 C6 C7 C9, C10 C12 C13, C14 R1 Description Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 μF Chip Capacitor 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitor 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitor 220 μF, 50 V Electrolytic Capacitors 3.3 W, 1/3 W Chip Resistor Part Number 2743019447 ATC100B6R8CT500XT C1825C103J1RAC C1825C225J5RAC T491D226K025AT T491D476K016AT GRM55DR61H106KA88B EMVY500ADA470MF80G EMVY500ADA221MJA0G CRCW12103R30FKEA Manufacturer Fair - Rite ATC Kemet Kemet Kemet Kemet Murata Nippon Chemi - Con Vishay MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 3 C11 C10 C3 B1 C12 C13 R1 C8 C9 C4, C5* C7 C6 C14 C1 CUT OUT AREA C2 MRF6S21050L Rev. 1 * C4 on bottom, C5 on top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.4 16.3 16.2 Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 11.5 W (Avg.) 16.1 I = 450 mA, 2−Carrier W−CDMA DQ 16 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% 15.9 Probability (CCDF) 15.8 15.7 15.6 15.5 ACPR IM3 Gps ηD, DRAIN EFFICIENCY (%) ηD 30 28 26 24 22 −32 IRL −34 −36 −38 −40 IM3 (dBc), ACPR (dBc) −10 −20 −30 −40 −50 −60 −42 15.4 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts 16 15.9 15.8 Gps, POWER GAIN (dB) 15.7 15.6 15.5 15.4 15.3 15.2 15.1 IM3 IRL VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 450 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD 41 40 39 38 Gps 37 −24 −26 −28 −30 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −15 −20 −25 −30 −35 −32 ACPR 15 −34 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 225 mA 14 13.5 0.1 1 VDD = 28 Vdc, f1 = 2135 MHz f2 = 2145 MHz, Two−Tone Measurements, 10 MHz Tone Spacing 10 100 450 mA 335 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 675 mA 560 mA −10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 675 mA −30 IDQ = 225 mA −40 335 mA 450 mA −60 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 560 mA −50 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 5th Order −40 7th Order 52 51 Pout, OUTPUT POWER (dBm) 50 P1dB = 47.89 dBm (61.52 W) 49 48 47 46 45 −60 0.01 44 0.1 1 TWO−TONE SPACING (MHz) 10 100 28 29 30 31 32 33 34 35 36 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz Actual P3dB = 48.66 dBm (73.43 W) Ideal −20 −30 −50 Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 Figure 8. Pulsed CW Output Power versus Input Power −20 −35 ACPR Gps −40 −45 −50 ηD 0.2 1 10 30 −55 −60 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA 20 15 10 5 0 Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16.5 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 13 3 10 Pout, OUTPUT POWER (WATTS) CW 100 ηD VDD = 28 Vdc IDQ = 450 mA f = 2140 MHz Gps 64 56 ηD, DRAIN EFFICIENCY (%) 48 40 32 24 16 8 Gps, POWER GAIN (dB) 17 16.5 16 15.5 15 14.5 14 13.5 13 12.5 12 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) CW VDD = 24 V 28 V 32 V IDQ = 450 mA f = 2140 MHz Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF6S21050LR3 MRF6S21050LSR3 6 RF Device Data Freescale Semiconductor IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −25 −30 TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 11.5 W Avg., and ηD = 27.7%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) +20 +30 0 −10 −20 −30 −40 −50 −60 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −15 −10 −5 0 5 10 3.84 MHz Channel BW W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +IM3 in 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 7 f = 2200 MHz Zload f = 2080 MHz f = 2200 MHz Z o = 25 Ω Zsource f = 2080 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg. f MHz 2080 2090 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 Zsource Ω 4.09 - j14.65 3.74 - j13.95 3.95 - j13.36 4.44 - j13.00 5.03 5.55 5.76 5.57 4.86 4.04 3.69 3.91 4.41 j12.89 j13.05 j13.26 j13.70 j13.92 j13.61 j12.91 j12.44 j12.32 Zload Ω 2.36 - j7.52 2.25 - j7.11 2.40 - j6.78 2.68 - j6.59 2.99 3.26 3.32 3.20 2.82 2.44 2.33 2.49 2.77 j6.52 j6.64 j6.68 j6.87 j6.93 j6.70 j6.29 j6.05 j5.96 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF6S21050LR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF6S21050LSR3 MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 2 Date Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Low Gold Plating bullet from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S21050LR3 MRF6S21050LSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 Document Number: RF Device Data MRF6S21050L Rev. 2, 12/2008 Freescale Semiconductor 11