MRF6S21140HR3_07

Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 4, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S21140HR3 MRF6S21140HSR3 2110 - 2170 MHz, 30 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S21140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S21140HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 75°C, 30 W CW Symbol RθJC Value (2,3) 0.35 0.38 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2007. All rights reserved. MRF6S21140HR3 MRF6S21140HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF VGS(th) VGS(Q) VDS(on) 1 2 — 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 14.5 26 — — — 15.5 27.5 - 37 - 41 - 15 17.5 — - 35 - 38 -9 dB % dBc dBc dB MRF6S21140HR3 MRF6S21140HSR3 2 RF Device Data Freescale Semiconductor R1 VBIAS C5 R2 C4 C3 Z6 VSUPPLY C10 C12 C13 + C16 Z5 R3 RF INPUT C17 C9 Z1 C1 C19 C2 Z2 Z3 Z4 DUT C18 C6 C7 Z8 Z9 Z10 Z11 Z12 Z13 RF OUTPUT C8 Z7 C11 C14 C15 Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.250″ x 0.083″ Microstrip 1.177″ x 0.083″ Microstrip 0.443″ x 0.083″ Microstrip 0.276″ x 0.787″ Microstrip 0.786″ x 0.083″ Microstrip (quarter wave length for bias purpose) 0.833″ x 0.083″ Microstrip (quarter wave length for supply purpose) Z8 Z9 Z10 Z11, Z12 Z13 PCB 0.531″ x 1.000″ Microstrip 0.308″ x 0.083″ Microstrip 0.987″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.160″ x 0.083″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values Part C1, C3, C8, C9, C10, C11 C2 C4 C5, C12, C13, C14, C15 C6, C19 C7 C16 C17, C18 R1, R2 R3 Description 6.8 pF Chip Capacitors 0.8 pF Chip Capacitor 220 nF Chip Capacitor 10 μF Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 220 μF, 63 V Electrolytic Capacitor, Radial 0.1 pF Chip Capacitors 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number ATC100B6R8CT500XT ATC100B0R8BT500XT VJ1812Y22YKXCAT C5750X5R1H106MT ATC100B0R2BT500XT ATC100B0R5BT500XT EMVY630ATR221MKE0S ATC100B0R1BT500XT CRCW12061002FKTA CRCW120610R0FKTA Manufacturer ATC ATC Vishay TDK ATC ATC Nippon Chemi - Con ATC Vishay Vishay MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 3 R2 R1 VGS C10 C4 C3 VDD C16 C5 C12 C13 C17 C1 R3 CUT OUT AREA C9 C19 C2 C6 C7 C18 C14 C15 C8 C11 MRF6S21140H Rev 0 Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout MRF6S21140HR3 MRF6S21140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 15.6 15.5 Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 30 W (Avg.), 15.4 IDQ = 1200 mA, 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, 15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.2 15.1 15 2060 ηD 30 28 26 Gps IRL IM3 ACPR IM3 (dBc), ACPR (dBc) −32 −36 −40 −12 −15 −18 −21 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −12 −15 −18 −21 1800 mA IRL, INPUT RETURN LOSS (dB) 1500 mA 900 mA −55 −60 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1200 mA 2080 2100 2120 2140 2160 2180 2200 −44 2220 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 30 Watts Avg. 15 14.9 Gps, POWER GAIN (dB) 14.8 14.7 14.6 14.5 ACPR 14.4 2060 2080 2100 2120 2140 2160 2180 2200 VDD = 28 Vdc, Pout = 60 W (Avg.), IDQ = 1200 mA, 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 42 40 38 −24 −27 −30 −33 2220 ηD Gps IRL IM3 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 60 Watts Avg. 17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1800 mA 16 Gps, POWER GAIN (dB) 1500 mA 1200 mA 15 900 mA −20 −25 −30 −35 −40 −45 −50 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing IDQ = 600 mA 14 600 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing 1 10 100 13 12 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 −60 0.1 48 1 10 100 32 34 36 38 40 42 44 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz P1dB = 52 dBm (158.5 W) Actual P3dB = 52.6 dBm (180 W) Ideal −20 −30 −40 5th Order −50 7th Order Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 25_C −25 18 Figure 8. Pulsed CW Output Power versus Input Power 60 25_C 85_C 50 40 25_C 85_C ηD 20 10 0 1000 Gps 30 TC = − 30_C −40 −45 Gps 85_C 85_C 25_C −30_C −50 ACPR −55 −60 Gps, POWER GAIN (dB) IM3 (dBc), ACPR (dBc) TC = − 30_C 16 15 14 13 12 1 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16 15 Gps, POWER GAIN (dB) 14 13 12 11 10 9 0 50 100 150 VDD = 24 V 28 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power 32 V IDQ = 1200 mA f = 2140 MHz 200 250 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S21140HR3 MRF6S21140HSR3 6 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, IDQ = 1200 mA 25_C f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier 85_C Spacing. 3.84 MHz Channel Bandwidth. PAR = 8.5 dB ηD @ 0.01% Probability (CCDF) −30_C 85_C −30 25_C IM3 −30_C −35 VDD = 28 Vdc IDQ = 1200 mA 17 f = 2140 MHz −30_C TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 30 W Avg., and ηD = 27.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 12. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 −10 −20 −30 −40 −50 −60 −70 −80 −25 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW 3.84 MHz Channel BW +IM3 in 3.84 MHz BW 25 −20 −15 −10 −5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 7 f = 2200 MHz Zload* f = 2080 MHz Z o = 25 Ω f = 2200 MHz Zsource f = 2080 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 7.53 - j10.99 7.57 - j10.67 7.58 - j10.23 7.51 - j9.73 7.44 - j9.32 Zload Ω 1.40 - j3.03 1.37 - j2.78 1.34 - j2.52 1.32 - j2.28 1.31 - j2.06 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21140HR3 MRF6S21140HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF6S21140HR3 B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF6S21140HSR3 MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 4 Date May 2007 Description • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet as functionality is standard, p. 1 • Added “Optimized for Doherty Applications” bullet to Features section, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S21140HR3 MRF6S21140HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004-2007. All rights reserved. MRF6S21140HR3 MRF6S21140HSR3 Document Number: RF Device Data MRF6S21140H Rev. 4, 5/2007 Freescale Semiconductor 11