MRF6S23100HR3

Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.4 dB Drain Efficiency — 23.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • Pb - Free and RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S23100HR3 MRF6S23100HSR3 2300 - 2400 MHz, 20 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S23100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S23100HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 330 1.9 - 65 to +150 200 100 Unit Vdc Vdc W W/°C °C °C W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 20 W CW Symbol RθJC Value (1,2) 0.53 0.59 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6S23100HR3 MRF6S23100HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 — 2 2.8 0.21 5.3 3 4 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 14 22.5 - 35 - 38 — 15.4 23.5 - 37 - 40.5 - 10 17 — — — — dB % dBc dBc dB MRF6S23100HR3 MRF6S23100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS + C6 RF INPUT Z1 C1 + C5 C4 C3 R1 C8 C2 Z11 Z12 Z13 C7 DUT Z14 C9 C10 C11 VSUPPLY + C12 RF OUTPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.725″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip 0.110″ x 0.240″ Microstrip 0.140″ x 0.080″ Microstrip 0.167″ x 0.500″ Microstrip 0.130″ x 0.080″ Microstrip 0.250″ x 0.611″ Microstrip 0.060″ x 0.080″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.329″ x 0.756″ Microstrip 0.083″ x 0.756″ Microstrip 0.092″ x 0.800″ Microstrip 0.436″ x 0.800″ Microstrip 0.974″ x 0.080″ Microstrip 0.727″ x 0.080″ Microstrip Arlon GX - 0300 - 5022, 0.030″, εr = 2.5 Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C2, C7, C8 C3 C4, C9 C5 C6 C10, C11 C12 R1 Ferrite Bead 5.6 pF Chip Capacitors, B Case 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 330 µF, 63 V Electrolytic Capacitor 10 Ω, 1/8 W Chip Resistor (1206) Description Part Number 2743019447 100B5R6CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B NACZF331M63V CRC120610R0F100 Manufacturer Fair - Rite ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Dale/Vishay MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 3 C4 C3 C2 C8 R1 B1 C6 C5 C11 C12 C9 C10 C1 CUT OUT AREA C7 MRF6S23100 Rev 2.0 Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout MRF6S23100HR3 MRF6S23100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −12 −15 −18 −21 −24 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −12 −14 −16 −18 −20 −22 IRL, INPUT RETURN LOSS (dB) 1500 mA −30 −40 −50 750 mA −60 −70 1 10 100 300 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1000 mA IDQ = 500 mA 1250 mA IRL, INPUT RETURN LOSS (dB) 16 15.8 Gps, POWER GAIN (dB) 15.6 15.4 15.2 15 14.8 ACPR 14.6 Gps ηD 25.4 24.8 24.2 23.6 3.84 MHz Channel Bandwidth −35 PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −37 IRL −39 −41 −43 14.4 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts Avg. 15.2 15.1 15 Gps, POWER GAIN (dB) 14.9 14.8 14.7 14.6 14.5 14.4 14.3 ηD 35.5 VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1000 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 35 34.5 34 Gps 35.5 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −25 −27 −29 −31 −33 IRL 14.2 −35 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 f, FREQUENCY (MHz) ACPR Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg. 18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1500 mA 17 Gps, POWER GAIN (dB) 1250 mA 16 15 14 13 12 0.1 500 mA 1000 mA 750 mA VDD = 28 Vdc, f1 = 2345 MHz f2 = 2355 MHz, Two−Tone Measurements 10 MHz Tone Spacing 0 −10 −20 VDD = 28 Vdc f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −15 −20 −25 3rd Order −30 −35 −40 5th Order −45 7th Order −50 −55 0.1 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements, Center Frequency = 2350 MHz Pout, OUTPUT POWER (dBm) 57 Ideal P3dB = 51.88 dBm (154.14 W) 53 P1dB = 51.18 dBm (131.19 W) Actual 55 51 49 VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 2350 MHz 32 33 34 35 36 37 38 39 40 47 1 10 100 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 Gps 15 10 5 0 1 10 ACPR 25_C Figure 8. Pulse CW Output Power versus Input Power −20 IM3 −25 −30_C 85_C −30 −35 25_C −40 −30_C 85_C 25_C 100 −45 −50 −55 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 0.1 TC = −30_C 25_C 85_C −30_C 70 60 Gps, POWER GAIN (dB) 25_C 50 85_C 40 30 20 ηD 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW ηD, DRAIN EFFICIENCY (%) 16 15 14 13 12 20 V 11 10 0 20 40 VDD = 12 V 16 V 60 80 100 120 140 160 24 V 28 V 32 V IDQ = 1000 mA f = 2350 MHz Gps VDD = 28 Vdc IDQ = 1000 mA f = 2350 MHz Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S23100HR3 MRF6S23100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1000 mA ηD f1 = 2345 MHz, f2 = 2355 MHz TC = 25_C 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) +20 +30 0 −10 −20 −30 −40 −50 −60 −70 3.84 MHz Channel BW W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 7 f = 2300 MHz f = 2400 MHz Zload f = 2300 MHz f = 2400 MHz Zsource Zo = 25 Ω VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg. f MHz 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 Zsource Ω 12.20 - j6.20 12.06 - j6.40 11.91 - j6.56 11.76 - j6.71 11.60 - j6.86 11.44 - j7.00 11.27 - j7.13 11.10 - j7.22 10.92 - j7.34 10.73 - j7.46 10.55 - j7.53 Zload Ω 2.06 - j4.69 2.04 - j4.62 2.02 - j4.55 2.01 - j4.48 1.99 - j4.42 1.97 - j4.35 1.96 - j4.28 1.94 - j4.22 1.93 - j4.15 1.91 - j4.09 1.90 - j4.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S23100HR3 MRF6S23100HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S23100HR3 MRF6S23100HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF6S23100HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF6S23100HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6S23100HR3 MRF6S23100HSR3 1Rev. 0, 8/2005 2 Document Number: MRF6S23100H RF Device Data Freescale Semiconductor