MRF6S23140HR3

Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.2 dB Drain Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S23140HR3 MRF6S23140HSR3 2300 - 2400 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S23140HR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CASE 465C - 02, STYLE 1 NI - 880S MRF6S23140HSR3 Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82°C, 140 W CW Case Temperature 75°C, 28 W CW Symbol RθJC Value (1,2) 0.29 0.33 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S23140HR3 MRF6S23140HSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nΑdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 13 23 — — — 15.2 25 - 37 - 40 - 15 17 — - 35 - 38 — dB % dBc dBc dB MRF6S23140HR3 MRF6S23140HSR3 2 RF Device Data Freescale Semiconductor + Z12 R1 VBIAS + C12 + C11 C10 C9 Z11 C3 RF INPUT Z7 Z6 Z13 Z8 DUT Z9 Z10 C6 B1 C5 C17 C18 C19 C20 VSUPPLY Z15 Z16 Z17 C2 Z18 RF OUTPUT Z1 C1 Z2 Z3 Z4 Z5 C4 B2 + C16 + C15 C14 C13 Z14 C8 + C7 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11, Z13 Z12, Z14 Z15 Z16 Z17 Z18 PCB C21 C22 C23 C24 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 0.678″ 0.420″ 0.845″ 0.175″ 0.025″ 0.514″ 0.507″ 0.097″ x 0.068″ x 0.068″ x 0.200″ x 0.530″ x 0.530″ x 0.050″ x 0.050″ x 1.170″ 0.193″ x 1.170″ Microstrip 0.712″ x 0.095″ Microstrip 0.098″ x 0.095″ Microstrip 0.115″ x 0.550″ Microstrip 0.250″ x 0.110″ Microstrip 0.539″ x 0.068″ Microstrip 0.956″ x 0.068″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2, C3, C4, C5, C6, C7, C8 C9, C13 C10, C14, C17, C21 C11, C15 C12, C16 C18, C19, C22, C23 C20, C24 R1 Description Ferrite Beads, Short 5.6 pF 100B Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Chip Capacitors 47 μF, 16 V Tantalum Chip Capacitors 10 μF, 50 V Chip Capacitors (2220) 330 μF, 63 V Electrolytic Capacitors 10 Ω, 1/8 W Chip Resistor (1206) Part Number 2743019447 100B5R6CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B NACZF331M63V Manufacturer Fair - Rite ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon MRF6S23140HR3 MRF6S23140HSR3 RF Device Data Freescale Semiconductor 3 C6 R1 B1 C5 C3 C12 C11 C10* C9* C17 C19 C20 C18 CUT OUT AREA C1 C2 MRF6S23140H Rev 3 C21 C22 C4 C16 B2 C15 C14* * Stacked C13* C8 C24 C7 C23 Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout MRF6S23140HR3 MRF6S23140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 15.6 15.5 Gps, POWER GAIN (dB) 15.4 VDD = 28 Vdc 15.3 Pout = 28 W (Avg.) IDQ = 1300 mA, 2−Carrier W−CDMA 15.2 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.1 15 14.9 14.8 2270 IM3 IRL ACPR −40 2290 2310 2330 2350 2370 2390 2410 −42 2430 Gps 28 27 26 ηD 25 −34 −36 −38 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −6 −9 −12 −15 −18 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −6 −9 −12 −15 −18 IRL, INPUT RETURN LOSS (dB) 1950 mA 1625 mA −50 975 mA −60 300 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1300 mA f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg. 15.1 15 Gps, POWER GAIN (dB) 14.9 VDD = 28 Vdc Pout = 56 W (Avg.) 14.8 IDQ = 1300 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth 14.7 PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.6 IM3 14.5 14.4 14.3 2270 IRL ACPR Gps ηD 38 37 36 35 −25 −27 −29 −31 2290 2310 2330 2350 2370 2390 2410 −33 2430 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 56 Watts Avg. 18 17 Gps, POWER GAIN (dB) 16 15 975 mA 14 13 12 11 1 650 mA VDD = 28 Vdc f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 1950 mA 1625 mA 1300 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −30 IDQ = 650 mA −40 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S23140HR3 MRF6S23140HSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 3rd Order −30 5th Order −40 −50 −60 0.1 7th Order VDD = 28 Vdc, Pout = 140 W (PEP) IDQ = 1300 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz 1 10 100 TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing 59 Pout, OUTPUT POWER (dBm) 57 55 53 51 49 47 45 29 31 33 P6dB = 53.51 dBm (224.39 W) P3dB = 53.04 dBm (201.42 W) P1dB = 52.22 dBm (162.72 W) Ideal Actual VDD = 28 Vdc, IDQ = 1300 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2350 MHz 35 37 39 41 43 Pin, INPUT POWER (dBm) Figure 8. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 42 36 30 24 18 12 6 0 0.5 IM3 ACPR 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 28 Vdc, IDQ = 1300 mA f1 = 2345 MHz, f2 = 2355 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD TC = − 30_C Gps −20 −25 −30 −35 −40 85_C 25_C −45 −50 −55 300 IM3 (dBc), ACPR (dBc) −30_C 25_C 85_C −30_C 85_C 25_C −30_C Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S23140HR3 MRF6S23140HSR3 6 RF Device Data Freescale Semiconductor 17 Gps 16 Gps, POWER GAIN (dB) 15 14 13 12 11 0.5 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 1300 mA f = 2350 MHz TC = −30_C 25_C 85_C −30_C 60 16 IDQ = 1300 mA f = 2350 MHz ηD, DRAIN EFFICIENCY (%) 15 Gps, POWER GAIN (dB) 25_C 50 85_C 40 30 20 ηD 10 0 300 14 13 20 V 12 VDD = 12 V 11 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW 16 V 24 V 28 V 32 V Figure 10. Power Gain and Drain Efficiency versus Output Power 1010 MTTF FACTOR (HOURS x AMPS2) Figure 11. Power Gain versus Output Power 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature MRF6S23140HR3 MRF6S23140HSR3 RF Device Data Freescale Semiconductor 7 W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) +20 +30 0 −10 −20 −30 −40 −50 −60 −70 3.84 MHz Channel BW W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S23140HR3 MRF6S23140HSR3 8 RF Device Data Freescale Semiconductor Z o = 25 Ω Zsource f = 2300 MHz f = 2400 MHz f = 2300 MHz Zload f = 2400 MHz VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg. f MHz 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 Zsource W 12.92 + j6.65 13.06 + j6.73 13.21 + j6.80 13.37 + j6.87 13.53 + j6.94 13.70 + j7.01 13.88 + j7.08 14.06 + j7.14 14.25 + j7.21 14.45 + j7.27 14.66 + j7.33 Zload W 1.05 - j2.88 1.04 - j2.82 1.03 - j2.76 1.01 - j2.70 1.00 - j2.64 0.99 - j2.58 0.97 - j2.52 0.96 - j2.46 0.95 - j2.40 0.94 - j2.34 0.93 - j2.28 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S23140HR3 MRF6S23140HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S23140HR3 MRF6S23140HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B K D TA 2 bbb M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B F E A (FLANGE) T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465B - 03 ISSUE E NI - 880 MRF6S23140HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF6S23140HSR3 MRF6S23140HR3 MRF6S23140HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S23140HR3 MRF6S23140HSR3 1Rev. 1, 5/2006 2 Document Number: MRF6S23140H RF Device Data Freescale Semiconductor