MRF6S27015NR1_08

Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300 - 2700 MHz, 3 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S27015NR1 CASE 1265A - 03, STYLE 1 TO - 270 - 2 GULL PLASTIC MRF6S27015GNR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 7.5 W Avg., Two - Tone Case Temperature 79°C, 3 W CW Symbol RθJC Value (2,3) 2.0 2.2 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2008. All rights reserved. MRF6S27015NR1 MRF6S27015GNR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 160 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 160 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 11.6 22.9 — — pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.5 — 2.2 — 2.2 2.8 3.1 0.27 3.5 — 4.4 0.4 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps ηD ACPR IRL 12.5 19 — — 14 22 - 45 - 18 16 — - 42 -9 dB % dBc dB 1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally input matched. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRF6S27015NR1 MRF6S27015GNR1 2 RF Device Data Freescale Semiconductor R1 VBIAS + C11 R2 C1 C2 Z7 Z18 RF INPUT R3 Z1 C3 Z2 Z3 Z4 Z5 Z6 DUT Z19 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C6 Z17 C4 C7 C8 RF OUTPUT VSUPPLY VSUPPLY C5 C9 C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.503″ 0.905″ 0.371″ 0.041″ 0.245″ 0.248″ 0.973″ 0.085″ 0.091″ 0.138″ x 0.066″ x 0.066″ x 0.300″ x 0.016″ x 0.851″ x 0.851″ x 0.050″ x 0.485″ x 0.667″ x 0.816″ Microstrip Microstrip x 0.049″ Taper Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.143″ x 0.816″ Microstrip 0.101″ x 0.667″ Microstrip 0.073″ x 0.485″ Microstrip 0.120″ x 0.021″ Microstrip 0.407″ x 0.170″ Microstrip 0.714″ x 0.066″ Microstrip 0.496″ x 0.066″ Microstrip 0.475″ x 0.050″ Microstrip 0.480″ x 0.050″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values Part C1 C2 C3 C4, C5, C6 C7, C8, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ,1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC100B4R7BT500XT ATC100B9R1BT500XT ATC100B8R2BT500XT GRM55DR61H106KA88L T491D106K035AT CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA Manufacturer Kemet ATC ATC ATC Murata Kemet Vishay Vishay Vishay MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 3 C11 R2 R1 C1 C2 C4 C7 C8 R3 C3 CUT OUT AREA C6 C9 C5 MRF6S27015N Rev. 3 C10 Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout MRF6S27015NR1 MRF6S27015GNR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 15 14 Gps, POWER GAIN (dB) 13 12 11 10 9 ALT1 ACPR Gps ηD IRL 24 23 22 21 VDD = 28 Vdc, Pout = 3 W (Avg.) IDQ = 160 mA, Single−Carrier W−CDMA 20 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 −50 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −5 −10 −15 −20 −25 8 −60 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz) Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg. 15 14 13 Gps, POWER GAIN (dB) 12 11 10 9 8 IRL ACPR ALT1 ηD VDD = 28 Vdc, Pout = 6 W (Avg.) IDQ = 160 mA, Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 32 31 30 29 28 −30 −40 −50 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −5 −10 −15 −20 −25 7 −60 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz) Figure 4. Single - Carrier W - CDMA Broadband Performance @ Pout = 6 Watts Avg. 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 240 mA 190 mA Gps, POWER GAIN (dB) 15 160 mA 14 130 mA −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 130 mA 160 mA 190 mA IDQ = 80 mA 240 mA VDD = 28 Vdc f1 = 2595 MHz, f2 = 2605 MHz Two−Tone Measurements 13 80 mA VDD = 28 Vdc f1 = 2592 MHz, f2 = 2605 MHz Two−Tone Measurements 1 10 Pout, OUTPUT POWER (WATTS) PEP 12 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order 3rd Order VDD = 28 Vdc, IDQ = 160 mA f1 = 2595 MHz, f2 = 2605 MHz Two−Tone Measurements, 10 MHz Tone Spacing −25 −30 −35 −40 −45 IM5−L −50 −55 −60 1 10 TWO−TONE SPACING (MHz) 100 IM7−U IM7−L VDD = 28 Vdc, Pout = 15 W (PEP) IDQ = 160 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz IM3−U IM3−L IM5−U Figure 7. Intermodulation Distortion Products versus Output Power 50 49 Pout, OUTPUT POWER (dBm) 48 47 46 45 44 43 42 41 40 26 27 28 29 30 31 32 P1dB = 43 dBm (20 W) P3dB = 43.7 dBm (23 W) P6dB = 44.3 dBm (27 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ = 160 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 2600 MHz 33 34 35 36 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc) 50 45 40 35 30 ALT1 25 20 15 10 5 1 Pout, OUTPUT POWER (WATTS) AVG. 10 Gps ACPR ηD −45 −50 −55 −60 −65 VDD = 28 Vdc, IDQ = 160 mA, f = 2600 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) −20 −25 ACPR (dBc), ALT1 (dBc) −30 −35 −40 Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S27015NR1 MRF6S27015GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18 17 Gps, POWER GAIN (dB) 16 25_C 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 28 Vdc IDQ = 160 mA f = 2600 MHz 85_C Gps TC = −30_C −30_C 25_C 85_C 64 56 Gps, POWER GAIN (dB) 48 40 32 24 16 8 0 10 5 10 15 20 25 30 Pout, OUTPUT POWER (WATTS) CW ηD, DRAIN EFFICIENCY (%) 14 15 IDQ = 160 mA f = 2600 MHz 13 12 VDD = 24 V 28 V 32 V 11 Figure 11. Power Gain and Drain Efficiency versus CW Output Power 25 VDD = 28 Vdc, IDQ = 160 mA WiMAX, 802.16, 64 QAM 3/4, 4 Bursts 7 MHz Channel Bandwidth, f = 2600 MHz 3 EVM, ERROR VECTOR MAGNITUDE (%) 109 Figure 12. Power Gain versus Output Power 20 ηD, DRAIN EFFICIENCY (%) 2.5 15 2 10 ηD 5 EVM 1.5 MTTF (HOURS) 108 107 1 0.5 0 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pout, OUTPUT POWER (dBm) 106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 3 W Avg., and ηD = 22%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. Drain Efficiency and Error Vector Magnitude versus Output Power Figure 14. MTTF versus Junction Temperature MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 7 W - CDMA TEST SIGNAL 100 10 −30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF (dB) −40 −50 −60 −70 −80 −90 −100 −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) −ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −10 −20 3.84 MHz Channel BW Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 16. Single - Carrier W - CDMA Spectrum MRF6S27015NR1 MRF6S27015GNR1 8 RF Device Data Freescale Semiconductor f = 2700 MHz Zload Zo = 5 Ω f = 2500 MHz f = 2700 MHz f = 2500 MHz Zsource VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 4.059 - j2.284 3.679 - j2.593 3.006 - j2.574 2.355 - j2.190 2.075 - j1.657 1.930 - j1.179 1.973 - j0.771 2.017 - j0.557 2.024 - j0.379 Zload W 3.380 - j0.543 3.265 - j0.546 3.077 - j0.449 2.892 - j0.336 2.727 - j0.182 2.564 - j0.034 2.435 + j0.140 2.286 + j0.340 2.227 + j0.538 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 9 Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system) f MHz MH 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 S11 |S11| 0.984 0.984 0.986 0.987 0.987 0.986 0.985 0.985 0.984 0.983 0.982 0.981 0.980 0.978 0.976 0.974 0.970 0.966 0.960 0.953 0.945 0.933 0.918 0.901 0.879 0.850 0.815 0.775 0.734 0.700 0.683 0.687 0.710 0.741 0.774 0.805 0.832 0.855 ∠φ - 178.2 - 179.0 180.0 179.0 178.1 177.3 176.5 175.8 175.1 174.5 173.8 173.2 172.5 171.9 171.2 170.5 169.8 169.0 168.3 167.5 166.6 165.8 164.9 164.1 163.2 162.5 162.2 162.5 164.0 167.0 171.0 175.1 178.5 - 179.3 - 178.2 - 177.8 - 177.9 - 178.2 |S21| 1.453 1.180 0.958 0.776 0.627 0.502 0.397 0.308 0.235 0.180 0.146 0.142 0.163 0.199 0.243 0.291 0.342 0.395 0.452 0.514 0.580 0.655 0.738 0.828 0.925 1.030 1.139 1.246 1.337 1.399 1.420 1.396 1.338 1.259 1.169 1.079 0.993 0.917 S21 ∠φ 39.2 36.5 34.4 33.0 32.3 32.5 34.1 37.7 44.5 56.5 75.6 98.9 118.0 129.9 136.6 140.2 141.8 142.1 141.5 140.2 138.4 135.9 132.5 128.4 123.5 117.6 110.8 102.7 93.6 83.5 73.1 62.9 53.4 45.0 37.6 31.1 25.8 21.2 |S12| 0.001 0.000 0.000 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.006 0.006 0.006 0.006 0.007 0.007 0.009 0.011 0.013 0.014 0.014 0.015 0.016 0.016 0.015 0.015 0.014 0.012 0.011 0.010 0.009 0.008 0.007 S12 ∠φ - 109.8 - 121.0 159.6 118.4 106.5 104.2 96.0 95.6 94.0 91.2 91.2 89.9 89.2 88.9 87.4 86.5 86.3 84.6 84.8 86.9 92.5 100.3 93.7 83.6 75.4 69.1 62.8 55.8 48.2 40.3 33.2 26.5 22.1 19.8 19.7 19.7 19.6 22.6 |S22| 0.870 0.888 0.901 0.911 0.921 0.931 0.940 0.944 0.951 0.956 0.962 0.965 0.969 0.973 0.976 0.980 0.983 0.986 0.988 0.990 0.993 0.992 0.994 0.996 0.997 0.998 0.995 0.991 0.984 0.976 0.966 0.957 0.951 0.948 0.947 0.947 0.948 0.950 S22 ∠φ - 122.3 - 127.6 - 132.0 - 135.8 - 139.1 - 142.1 - 144.8 - 147.3 - 149.5 - 151.5 - 153.4 - 155.2 - 156.8 - 158.3 - 159.8 - 161.1 - 162.4 - 163.7 - 164.9 - 166.1 - 167.3 - 168.4 - 169.4 - 170.4 - 171.6 - 172.8 - 173.9 - 175.0 - 176.0 - 176.9 - 177.6 - 178.0 - 178.3 - 178.6 - 178.9 - 179.2 - 179.5 - 179.9 (continued) MRF6S27015NR1 MRF6S27015GNR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system) (continued) f MHz MH 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 S11 |S11| 0.873 0.887 0.897 0.907 0.914 0.919 0.926 0.931 0.936 0.940 0.942 0.945 0.947 0.949 0.950 0.953 0.955 ∠φ - 178.8 - 179.4 - 179.9 179.6 179.1 178.8 178.3 177.9 177.4 177.0 176.6 176.3 175.8 175.6 175.1 174.8 174.5 |S21| 0.848 0.786 0.731 0.682 0.639 0.600 0.566 0.534 0.505 0.480 0.457 0.436 0.416 0.399 0.382 0.368 0.355 S21 ∠φ 17.2 13.7 10.6 7.9 5.5 3.3 1.3 - 0.6 - 2.2 - 3.8 - 5.2 - 6.5 - 7.6 - 8.7 - 9.6 - 10.5 - 11.5 |S12| 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.006 0.006 0.006 0.007 0.007 0.008 0.009 0.011 0.012 0.014 S12 ∠φ 31.2 42.2 45.6 46.5 48.0 47.0 45.8 52.1 62.3 69.8 73.2 78.7 85.1 87.9 88.2 86.9 85.1 |S22| 0.953 0.955 0.956 0.957 0.958 0.960 0.962 0.964 0.965 0.966 0.967 0.968 0.969 0.969 0.970 0.972 0.974 S22 ∠φ 179.7 179.2 178.7 178.2 177.8 177.2 176.8 176.2 175.7 175.2 174.7 174.2 173.8 173.2 172.9 172.6 172.1 MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF6S27015NR1 MRF6S27015GNR1 12 RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 13 MRF6S27015NR1 MRF6S27015GNR1 14 RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 15 MRF6S27015NR1 MRF6S27015GNR1 16 RF Device Data Freescale Semiconductor MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Aug. 2006 June 2007 • Initial Release of Data Sheet • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150_C, p. 1 • Operating Junction Temperature increased from 200_C to 225_C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200_C to 225_C in Capable Plastic Package bullet, p, 1 • Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q), and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2 • VDS(on) Typ and Min values corrected in On Characteristics table, p. 2 • Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Fig. 15, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, updated to remove IM3 measurement copy from callout in graph, p. 8 • Updated Fig. 16, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8 2 Dec. 2008 • Changed Typical Performance Full Frequency Band to f = 2600 MHz to match Functional Test specification, p. 1 • Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 12 - 14. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 15 - 17. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number. • Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p. 2. • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 Description MRF6S27015NR1 MRF6S27015GNR1 18 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006-2008. All rights reserved. MRF6S27015NR1 MRF6S27015GNR1 Document Number: RF Device Data MRF6S27015N Rev. 2, 12/2008 Freescale Semiconductor 19