MRF6V12500HR3

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.7 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6V12500HR3 MRF6V12500HSR3 965 - 1215 MHz, 500 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6V12500HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6V12500HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +100 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Symbol ZθJC Value (1,2) 0.044 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.26 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.2 697 1391 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.7 — 1.7 2.4 0.25 2.4 3.2 — Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS — 110 — — — — — — 10 — 20 200 μAdc Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Part internally matched both on input and output. Gps ηD IRL 18.5 58 — 19.7 62 - 18 22 — -9 dB % dB MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor R3 VBIAS C9 C8 C7 R1 C5 C3 Z19 Z9 Z10 Z11 Z12 Z13 Z14 C12 C13 + C14 + C15 VSUPPLY Z15 Z16 Z17 C2 Z18 RF OUTPUT RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z21 DUT Z20 R4 R2 C6 C16 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10 C10 C4 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB 0.161” x 1.500″ Microstrip 0.613” x 1.281″ Microstrip 0.248” x 0.865″ Microstrip 0.087” x 0.425″ Microstrip 0.309” x 0.090″ Microstrip 0.193” x 0.516″ Microstrip 0.279” x 0.080″ Microstrip 0.731” x 0.080″ Microstrip 0.507” x 0.040″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 0.457″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.605″ x 0.040″ Microstrip 0.080″ x 0.449″ Microstrip 0.374″ x 0.608″ Microstrip 0.118″ x 1.252″ Microstrip 0.778″ x 1.710″ Microstrip 0.095″ x 1.710″ Microstrip 0.482″ x 0.050″ Microstrip 0.138″ x 1.500″ Microstrip Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2 C3, C4, C5, C6 C7, C10 C8, C11, C13, C16 C9 C12 C14, C15 R1, R2 R3, R4 Description 5.1 pF Chip Capacitors 33 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 2.2 μF, 100 V Chip Capacitors 22 μF, 25 V Chip Capacitor 1 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 56 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors Part Number ATC100B5R1CT500XT ATC100B330JT500XT GRM55DR61H106KA88L 2225X7R225KT3AB TPSD226M025R0200 GRM31CR72A105KA01L MCGPR63V477M13X26 - RH CRCW120656R0FKEA CRCW12060000Z0EA Manufacturer ATC ATC Murata ATC AVX Murata Multicomp Vishay Vishay MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 3 C14 C12 R3 C9 MRF6V12500H Rev. 1 C8 C7 R1 C3 C5 C13 C15 CUT OUT AREA C2 C1 R2 C11 C10 R4 C4 C6 C16 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 10000 MAXIMUM OPERATING Tcase (°C) Ciss 1000 C, CAPACITANCE (pF) Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 0 5 10 15 20 25 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 μsec Pout = 525 W Pout = 500 W Pout = 475 W 10 1 Crss 0.1 Figure 3. Capacitance versus Drain - Source Voltage 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 30 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED ηD Gps 80 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 1000 Pout, OUTPUT POWER (dBm) Figure 4. Safe Operating Area 62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 22 22 21 21 Gps, POWER GAIN (dB) IDQ = 800 mA Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 17 30 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 13 12 30 Figure 6. Pulsed Output Power versus Input Power 20 600 mA 400 mA 19 200 mA IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 40 V VDD = 30 V 35 V 50 V 45 V 18 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 700 TC = −30_C 600 Pout, OUTPUT POWER (dBm) 500 400 300 200 100 0 0 2 4 6 8 10 12 Pin, INPUT POWER (dBm) PULSED VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 55_C 25_C Gps, POWER GAIN (dB) 85_C 22 21 20 19 18 17 16 15 14 30 ηD VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED 85_C Gps TC = −30_C 60 25_C 55_C 50 40 30 20 10 0 1000 80 70 ηD, DRAIN EFFICIENCY (%) Figure 9. Pulsed Output Power versus Input Power 109 Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 500 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 1030 MHz Zload f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz 1030 Zsource W 1.36 - j1.27 Zload W 2.50 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF6V12500HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A - 06 ISSUE H NI - 780S MRF6V12500HSR3 MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Sept. 2009 • Initial Release of Data Sheet Description MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 1Rev. 0, 9/2009 0 Document Number: MRF6V12500H RF Device Data Freescale Semiconductor