MRF6V2010NBR1

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.9 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Symbol RθJC Value (1,2) 3.0 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6V2010NR1 MRF6V2010NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 5 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 28 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 70 mAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss — — — 0.13 7.3 16.3 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 — 1.68 2.68 0.26 3 3.5 — Vdc Vdc Vdc IDSS IDSS V(BR)DSS IGSS — — 110 — — — — — 2.5 50 — 10 mA μAdc Vdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW Gps ηD IRL 22.5 58 — 23.9 62 - 14 25.5 — -9 dB % dB ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2010NR1 MRF6V2010NBR1 2 RF Device Data Freescale Semiconductor L2 B1 VBIAS + C2 + C3 C4 C5 C6 C7 C8 L3 R1 RF INPUT Z1 C1 Z2 Z3 L1 Z4 C9 DUT C10 C17 RF OUTPUT C11 C12 C13 C14 B2 + C15 C16 VSUPPLY Z5 Z6 Z7 Z8 Z9 Z10 C18 Z11 Z1 Z2 Z3 Z4 Z5 Z6 0.235″ 1.190″ 0.619″ 0.190″ 0.293″ 0.120″ x 0.082″ x 0.082″ x 0.082″ x 0.270″ x 0.270″ x 0.270″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.062″ x 0.270″ Microstrip 0.198″ x 0.082″ Microstrip 5.600″ x 0.082″ Microstrip 0.442″ x 0.082″ Microstrip 0.341″ x 0.082″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values Part B1, B2 C1, C8, C11, C18 C2 C3 C4, C13 C5, C14 C6, C15 C7, C12 C9 C10 C16 C17 L1 L2, L3 R1 Description 95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 27 pF Chip Capacitor 17.5 nH Inductor 82 nH Inductors 120 Ω, 1/4 W Chip Resistor Part Number 2743021447 ATC100B102JT50XT T491D106K035AT T491X226K035AT ATC200B393KT50XT ATC200B223KT50XT CDR33BX104AKYS C1825C225J5RAC 27271SL ATC100B120JT500XT ESMG630ELL471MK205 ATC100B270JT500XT B06T 1812SMS - 82NJ CRCW12061200FKTA Manufacturer Fair - Rite ATC Kemet Kemet ATC ATC Kemet Kemet Johanson ATC United Chemi - Con ATC CoilCraft CoilCraft Vishay MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 3 C5 C4 B1 C7 C2 C3 R1 L1 C8 CUT OUT AREA C12 C11 C6 C14 C13 L2 C15 B2 C16 L3 C10 C17 C18 C1 C9 MRF6V2010N/NB Rev. 3 Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout MRF6V2010NR1 MRF6V2010NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 100 10 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 0.1 0 10 20 30 40 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Ciss C, CAPACITANCE (pF) 10 1 1 TC = 25°C 0.1 1 10 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 100 200 Figure 3. Capacitance versus Drain - Source Voltage 0.35 0.3 ID, DRAIN CURRENT (AMPS) VGS = 3 V 0.25 0.2 2.75 V 0.15 2.63 V 0.1 0.05 2.25 V 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 18 0.1 2.5 V Gps, POWER GAIN (dB) 23 22 23 mA 21 20 15 mA 19 25 24 Figure 4. DC Safe Operating Area IDQ = 45 mA 38 mA 30 mA VDD = 50 Vdc f1 = 220 MHz 1 Pout, OUTPUT POWER (WATTS) CW 10 20 Figure 5. DC Drain Current versus Drain Voltage −20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −25 −30 −35 38 mA −40 −45 −50 −55 1 IDQ = 60 mA 45 mA 15 mA 23 mA Pout, OUTPUT POWER (dBm) 45 47 Figure 6. CW Power Gain versus Output Power Ideal P3dB = 40.87 dBm (12.2 W) 30 mA 43 P1dB = 40.43 dBm (11.04 W) 41 Actual VDD = 50 Vdc f1 = 220 MHz, f2 = 220.1 MHz Two −Tone Measurements 100 kHz Tone Spacing 10 20 39 VDD = 50 Vdc, IDQ = 30 mA f = 220 MHz 37 13 15 17 19 21 23 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 7. Third Order Intermodulation Distortion versus Output Power Figure 8. CW Output Power versus Input Power MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 26 24 Gps, POWER GAIN (dB) 22 20 18 16 14 25 V 12 VDD = 20 V 10 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 30 mA f = 220 MHz 40 V 35 V 45 V 50 V Pout, OUTPUT POWER (dBm) 40 25_C 35 85_C 45 TC = − 30_C 30 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 0 5 10 15 20 25 25 20 Pin, INPUT POWER (dBm) Figure 9. Power Gain versus Output Power 26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 0.1 1 Pout, OUTPUT POWER (WATTS) CW VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 10 85_C 25_C ηD TC = − 30_C Gps 85_C −30_C 72 63 54 45 36 27 18 9 0 20 105 90 ηD, DRAIN EFFICIENCY (%) 108 Figure 10. Power Output versus Power Input 25_C MTTF (HOURS) 107 106 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 10 W CW, and ηD = 62%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. MTTF versus Junction Temperature MRF6V2010NR1 MRF6V2010NBR1 6 RF Device Data Freescale Semiconductor Zo = 50 Ω Zload f = 220 MHz Zsource f = 220 MHz VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz 220 Zsource W 20 + j25 Zload W 75 + j44 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V2010NR1 MRF6V2010NBR1 8 RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 9 MRF6V2010NR1 MRF6V2010NBR1 10 RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 11 MRF6V2010NR1 MRF6V2010NBR1 12 RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Feb. 2007 May 2007 • Initial Release of Data Sheet • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1, C8, C11, C18, C4, C13, C5, and C14, p. 3 • Corrected Series Impedance Zsource and Zload values, Fig. 13, Series Equivalent Source and Load Impedance, p. 7 Description MRF6V2010NR1 MRF6V2010NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6V2010NR1 MRF6V2010NBR1 Document Number: RF Device Data MRF6V2010N Rev. 1, 5/2007 Freescale Semiconductor 15