MRF6V2300NBR1

Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 3, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain — 25.5 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2300NR1 MRF6V2300NBR1 10 - 600 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE - ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 0.5, +10 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. MRF6V2300NR1 MRF6V2300NBR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol RθJC Value (1,2) 0.24 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain- Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss — — — 2.88 120 268 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1 1.5 — 1.63 2.6 0.28 3 3.5 — Vdc Vdc Vdc IDSS IDSS V(BR)DSS IGSS — — 110 — — — — — 2.5 50 — 10 mA μAdc Vdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW Gps ηD IRL 24 66 — 25.5 68 - 16 27 — -9 dB % dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2300NR1 MRF6V2300NBR1 2 RF Device Data Freescale Semiconductor B3 B1 VBIAS + C1 + C2 + C3 C4 C5 C6 C7 R1 B2 L2 C17 C18 C19 + C20 VSUPPLY L1 C8 RF INPUT C9 C10 C11 R2 Z3 Z4 Z5 R3 Z6 C14 C15 C16 RF OUTPUT Z7 Z8 Z9 Z10 C23 C21 C22 Z11 Z1 C12 Z2 C13 DUT Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.352″ x 0.082″ Microstrip 1.567″ x 0.082″ Microstrip 0.857″ x 0.082″ Microstrip 0.276″ x 0.220″ Microstrip 0.434″ x 0.220″ Microstrip 0.298″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 PCB 0.085″ x 0.170″ Microstrip 2.275″ x 0.170″ Microstrip 0.945″ x 0.170″ Microstrip 0.443″ x 0.082″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values Part B1, B2 B3 C1 C2 C3 C4, C19 C5, C18 C6, C11, C17 C7, C8, C15, C16 C10 C9, C12, C14, C23 C13 C20 C21 C22 L1 L2 R1 R2, R3 Description 95 Ω, 100 MHz Long Ferrite Beads, Surface Mount 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitor 10 μF, 35 V Tantalum Capacitor 10 K pF Chip Capacitors 20 K pF Chip Capacitors 0.1 μF, 50 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 220 nF Chip Capacitor 1000 pF Chip Capacitors 82 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 24 pF Chip Capacitor 39 pF Chip Capacitor 4 Turn #18 AWG, 0.18” ID 82 nH Inductor 270 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistors Part Number 2743021447 2743019447 476KXM063M T494X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1206C224Z5VAC ATC100B102JT50XT ATC100B820JT500XT 477KXM063M ATC100B240JT500XT ATC100B390JT500XT None 1812SMS- 82NJ CRCW12062700FKTA CRCW12064R75FKTA Manufacturer Fair- Rite Fair- Rite Illinois Capacitor Kemet Kemet ATC ATC AVX Kemet Kemet ATC ATC Illinois Capacitor ATC ATC None Coilcraft Vishay Vishay MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 3 C1 C2 C3 + B1 C4 C5 C6 R1 C10 C11 C9 B2 C8 C15* C16* L2 C19 C18 C17 B3 + C20 C7 C12 R2 R3 C14 L1 C23 CUT OUT AREA C13 C22 C21 MRF6V2300N/NB Rev. 3 * Stacked Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout MRF6V2300NR1 MRF6V2300NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 Ciss Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 100 10 TC = 25°C 1 0 10 20 30 40 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 100 Figure 4. Capacitance versus Drain - Source Voltage 10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) 2.25 V 22 10 2.63 V 2.5 V 2.75 V Gps, POWER GAIN (dB) VGS = 3 V 28 27 Figure 5. DC Safe Operating Area IDQ = 1350 mA 1125 mA 26 25 900 mA 650 mA 24 23 450 mA VDD = 50 Vdc f1 = 220 MHz 100 Pout, OUTPUT POWER (WATTS) CW 600 Figure 6. DC Drain Current versus Drain Voltage −15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 60 Figure 7. CW Power Gain versus Output Power VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz −20 Two−Tone Measurements, 100 kHz Tone Spacing Pout, OUTPUT POWER (dBm) 58 P3dB = 55.76 dBm (377 W) Ideal −25 −30 −35 650 mA −40 −45 −50 1350 mA −55 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP 1125 mA IDQ = 450 mA 900 mA P1dB = 55.04 dBm (319 W) 56 Actual 54 52 50 24 VDD = 50 Vdc, IDQ = 900 mA f = 220 MHz 26 28 30 32 34 Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 28 26 Pout, OUTPUT POWER (dBm) 55 Gps, POWER GAIN (dB) 24 22 20 18 25 V 16 VDD = 20 V 14 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW 30 V IDQ = 900 mA f = 220 MHz 40 V 35 V 50 V 45 V 25_C 60 TC = −30_C 85_C 50 45 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 15 20 25 30 35 40 35 10 Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 5 10 ηD Gps TC = −30_C 25_C 85_C Figure 11. Power Output versus Power Input 80 70 −30_C 60 50 40 30 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 100 20 10 600 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) −28 −29 −30 −31 −32 −33 IMD3 (dBc) 25_C 85_C Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power 25 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 160 VDD = 50 V, Pout = 300 W (Peak) IDQ = 1100 mA, Tone−Spacing = 100 kHz 170 180 190 200 210 220 230 IMD3 Gps ηD 65 60 55 50 45 40 35 30 25 20 15 240 f, FREQUENCY (MHz) Figure 13. VHF Broadcast Broadband Performance MRF6V2300NR1 MRF6V2300NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W CW, and ηD = 68%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 7 Zsource f = 220 MHz Zo = 5 Ω Zload f = 220 MHz VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz 220 Zsource W 1.23 + j3.69 Zload W 2.43 + j2.04 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6V2300NR1 MRF6V2300NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 9 MRF6V2300NR1 MRF6V2300NBR1 10 RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 11 MRF6V2300NR1 MRF6V2300NBR1 12 RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 13 MRF6V2300NR1 MRF6V2300NBR1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Feb. 2007 Feb. 2007 • Initial Release of Data Sheet • Added Fig. 1, Pin Connections, p. 1 • Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1 • Added Max value to Power Gain, Table 5, Functional Tests, p. 2 2 3 May 2007 Jan. 2008 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C19, C5, C18, C9, C12, C14, and C23, p. 3 • Increased operating frequency to 600 MHz, p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 9 - 11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 12 - 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. Description MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2008. All rights reserved. MRF6V2300NR1 MRF6V2300NBR1 1Rev. 3, 1/2008 6 Document Number: MRF6V2300N RF Device Data Freescale Semiconductor