MRF6V4300NR1

Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain — 22 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V4300NR1 MRF6V4300NBR1 10-600 MHz, 300 W, 50 V LATERAL N-CHANNEL SINGLE-ENDED BROADBAND RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6V4300NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE-ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Figure 1. Pin Connections Symbol VDSS VGS Tstg TC TJ Value --0.5, +110 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. MRF6V4300NR1 MRF6V4300NBR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol RθJC Value (1,2) 0.24 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss — — — 2.8 105 304 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.9 — 1.65 2.7 0.25 2.4 3.4 — Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS — 110 — — — — — — 10 — 50 2.5 μAdc Vdc μAdc mA Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW Gps ηD IRL 20 58 — 22 60 --16 24 — --9 dB % dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V4300NR1 MRF6V4300NBR1 2 RF Device Data Freescale Semiconductor B3 VSUPPLY B1 VBIAS + C1 C7 C4 C8 R1 L4 C13 RF OUTPUT L2 C9 C5 C2 C12 RF INPUT L1 Z5 Z6 Z7 Z8 Z9 C20 Z10 C21 C22 Z11 C25 C26 Z12 C15 Z13 Z1 C11 Z2 Z3 Z4 C19 C16 C17 C18 DUT L5 C14 L3 C10 C6 B2 C23 C24 C27 C28 C3 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.900″ x 0.082″ Microstrip 0.115″ x 0.170″ Microstrip 0.260″ x 0.170″ Microstrip 0.380″ x 0.170″ Microstrip 0.220″ x 0.220″ Microstrip 0.290″ x 0.630″ Microstrip 0.220″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.380″ x 0.220″ Microstrip 0.040″ x 0.170″ Microstrip 0.315″ x 0.170″ Microstrip 0.230″ x 0.170″ Microstrip 0.390″ x 0.170″ Microstrip 0.680″ x 0.082″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values Part B1 B2, B3 C1 C2, C3 C4, C5, C6, C7 C8, C9, C10 C11, C12, C13, C14, C15 C16 C17 C18 C19, C20 C21, C22, C23, C24 C25, C26, C27, C28 L1 L2, L3 L4, L5 R1 Short Ferrite Bead Long Ferrite Beads 47 μF, 25 V, Tantalum Capacitor 22 μF, 50 V, Chip Capacitors 1 μF, 100 V, Chip Capacitors 15 nF, 100 V, Chip Capacitors 240 pF, Chip Capacitors 9.1 pF, Chip Capacitor 15 pF, Chip Capacitor 51 pF, Chip Capacitor 5.6 pF, Chip Capacitors 4.3 pF, Chip Capacitors 4.7 pF, Chip Capacitors 27 nH Inductor 47 nH Inductors 5 Turn, #18 AWG Inductors, Hand Wound 10 Ω, 1/4 W, Chip Resistor Description Part Number 2743019447 2743021447 T491B476M025AT C5750JF1H226ZT C3225JB2A105KT C3225CH2A153JT ATC100B241JT500XT ATC100B9R1JT500XT ATC100B150JT500XT ATC100B510JT500XT ATC100B5R6JT500XT ATC100B4R3JT500XT ATC100B4R7JT500XT 1812SMS--27NJLC 1812SMS--47NJLC Copper Wire CRCW120610R1FKEA Vishay Manufacturer Fair--Rite Fair--Rite Kemet TDK TDK TDK ATC ATC ATC ATC ATC ATC ATC Coilcraft Coilcraft MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 3 C1 C7 B1 C4 C8 L2 R1 C12 C13 C20 L4 C17 CUT OUT AREA C18 ATC B3 C2 C9 C5 L1 C11 C16 L5 C21 C22 C25 C26 C15 C19 C14 L3 C23 C24 C27 C28 MRF6V4300N/NB Rev. 1 C10 C6 B2 C3 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 Ciss Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 100 10 10 Crss 1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 1 1 TC = 25°C 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 100 Figure 4. Capacitance versus Drain-Source Voltage 10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 2.25 V 120 18 10 2.5 V 2.63 V 2.75 V Gps, POWER GAIN (dB) VGS = 3 V 23 22 21 900 mA 20 19 Figure 5. DC Safe Operating Area IDQ = 1350 mA 1125 mA 450 mA 650 mA VDD = 50 Vdc f = 450 MHz 100 Pout, OUTPUT POWER (WATTS) CW 600 DRAIN VOLTAGE (VOLTS) Figure 6. DC Drain Current versus Drain Voltage 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 10 60 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz Two--Tone Measurements, 100 kHz Tone Spacing Pout, OUTPUT POWER (dBm) 59 58 57 56 55 54 53 52 51 100 Pout, OUTPUT POWER (WATTS) PEP 600 50 28 Figure 7. CW Power Gain versus Output Power Ideal P3dB = 56.06 dBm (403 W) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) P1dB = 55.15 dBm (327 W) Actual IDQ = 450 mA 650 mA 900 mA 1350 mA 1125 mA VDD = 50 Vdc, IDQ = 900 mA f = 450 MHz 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 0 50 25 V VDD = 20 V 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW 30 V 40 V 35 V IDQ = 900 mA f = 450 MHz 300 350 400 45 V 50 V Pout, OUTPUT POWER (dBm) 60 25_C TC = --30_C 85_C 50 45 40 35 15 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 20 25 30 35 40 55 Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power 25 24 Gps, POWER GAIN (dB) 23 22 21 20 19 18 10 85_C ηD VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 100 Pout, OUTPUT POWER (WATTS) CW Gps TC = --30_C 85_C 25_C --30_C 25_C 80 70 60 50 40 30 20 10 500 105 90 ηD, DRAIN EFFICIENCY (%) 107 108 Figure 11. Power Output versus Power Input MTTF (HOURS) 106 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W, and ηD = 60%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. Power Gain and Drain Efficiency versus CW Output Power Figure 13. MTTF versus Junction Temperature MRF6V4300NR1 MRF6V4300NBR1 6 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 450 MHz Zsource f = 450 MHz Zload VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz 450 Zsource Ω 0.39 + j1.26 Zload Ω 1.27 + j0.96 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V4300NR1 MRF6V4300NBR1 8 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 9 MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 11 MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 2 3 Date July 2008 Oct. 2008 Mar. 2009 Apr. 2010 • Initial Release of Data Sheet • Added Fig. 13, MTTF versus Junction Temperature, p. 6 • Corrected Zsource, “0.40 + j5.93” to “0.39 + j1.26” and Zload, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series Equivalent Source and Load Impedance data table and replotted data, p. 7 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 14 Description MRF6V4300NR1 MRF6V4300NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008--2010. All rights reserved. MRF6V4300NR1 MRF6V4300NBR1 Document Number: RF Device Data MRF6V4300N Rev. 3, 4/2010 Freescale Semiconductor 15