MRF6VP41KHR6

Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features • CW Operation Capability with Adequate Liquid Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Excellent Thermal Stability • Designed for Push - Pull Operation • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6VP41KHR6 MRF6VP41KHSR6 10 - 450 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 375D - 05, STYLE 1 NI - 1230 MRF6VP41KHR6 CASE 375E - 04, STYLE 1 NI - 1230S MRF6VP41KHSR6 PARTS ARE PUSH - PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS Tstg TC TJ CW Value - 0.5, +110 - 6, +10 - 65 to +150 150 200 1176 5.5 Unit Vdc Vdc °C °C °C W W/°C © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6VP41KHR6 MRF6VP41KHSR6 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 450 MHz Case Temperature 81°C, 1000 W CW, 352.2 MHz Symbol RθJC Value (1,2) 0.03 0.16 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (3) Symbol IGSS V(BR)DSS IDSS IDSS Min — 110 — — Typ — — — — Max 10 — 100 5 Unit μAdc Vdc μAdc mA Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1600 μAdc) Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (3) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) VGS(th) VGS(Q) VDS(on) 1 1.5 — 1.68 2.2 0.28 3 3.5 — Vdc Vdc Vdc Crss Coss Ciss — — — 3.3 147 506 — — — pF pF pF Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 19 60 — 20 64 - 18 22 — -9 dB % dB 1. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push - pull configuration. MRF6VP41KHR6 MRF6VP41KHSR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C1 COAX1 Z8 Z2 RF INPUT Z1 Z3 C6 Z9 C21 COAX2 Z15 L2 L4 B2 VBIAS + C11 Z1 Z2*, Z3* Z4*, Z5* Z6, Z7 Z8*, Z9* Z10, Z11 Z12, Z13 C12 C13 C14 Z14*, Z15* Z16, Z17 Z18, Z19 Z20, Z21, Z22, Z23 Z24 PCB C31 C32 C33 C34 C20 C5 C7 C8 Z5 C9 Z7 C10 DUT Z11 Z13 C15 C16 C17 C18 C19 Z4 Z6 Z10 Z12 C2 C3 C4 L1 L3 Z14 Z16 Z18 Z20 Z22 C22 C23 C25 C26 C27 C28 + C29 + C30 VSUPPLY COAX3 RF Z24 OUTPUT C24 Z17 Z19 Z21 Z23 COAX4 + C35 + C36 VSUPPLY 0.366″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.220″ x 0.451″ Microstrip 0.117″ x 0.726″ Microstrip 0.792″ x 0.058″ Microstrip 0.316″ x 0.726″ Microstrip 0.262″ x 0.507″ Microstrip 0.764″ x 0.150″ Microstrip 0.290″ x 0.430″ Microstrip 0.100″ x 0.430″ Microstrip 0.080″ x 0.430″ Microstrip 0.257″ x 0.215″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 2. MRF6VP41KHR6 Test Circuit Schematic Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values Part B1, B2 C1, C11 C2, C12, C28, C34 C3, C13, C27, C33 C4, C14 C5, C6, C8, C15 C7, C10 C9 C16 C17 C18 C19 C20, C21, C22, C23, C25, C32 C24 C26, C31 C29, C30, C35, C36 Coax1, 2, 3. 4 L1, L2 L3, L4 Description 47 Ω, 100 MHz Short Ferrite Beads 47 μF, 50 V Electrolytic Capacitors 0.1 μF Chip Capacitors 220 nF, 50 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 27 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors 33 pF Chip Capacitor 12 pF Chip Capacitor 10 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitor 240 pF Chip Capacitors 5.6 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitors 25 Ω Semi Rigid Coax, 2.2″ Long 2.5 nH, 1 Turn Inductors 43 nH, 10 Turn Inductors Part Number 2743019447 476KXM063M CDR33BX104AKYS C1812C224K5RAC C1825C225J5RAC ATC100B270JT500XT 27291SL ATC100B330JT500XT ATC100B120JT500XT ATC100B100JT500XT ATC100B9R1CT500XT ATC100B8R2CT500XT ATC100B241JT200XT ATC100B5R6CT500XT 2225X7R225KT3AB EMVY630GTR331MMH0S UT - 141C- 25 A01TKLC B10TJLC Manufacturer Fair - Rite Illinois Kemet Kemet Kemet ATC Johanson Components ATC ATC ATC ATC ATC ATC ATC ATC Multicomp Micro - Coax CoilCraft Coilcraft MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 3 C29 C1 B1 C2 C3 C4 MRF6VP41KH Rev. 1 C27 C28 C30 C25 L1 C26 COAX3 COAX1 L3 C5 C7 C8 C9 C10 C23 C18 C19 C16 CUT OUT AREA C15 C22 C6 C17 C20 C21 C24 COAX2 L2 C32 L4 COAX4 C31 C35 B2 C12 C11 C13 C14 C33 C36 C34 Figure 3. MRF6VP41KHR6 Test Circuit Component Layout MRF6VP41KHR6 MRF6VP41KHSR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) TJ = 200°C TJ = 150°C TJ = 175°C 100 C, CAPACITANCE (pF) 10 10 Crss TC = 25°C 1 0 10 20 30 40 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 100 Note: Each side of device measured separately. Figure 4. Capacitance versus Drain - Source Voltage 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) PULSED ηD VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% Gps 80 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 1000 2000 Pout, OUTPUT POWER (dBm) 65 64 63 62 61 60 59 58 57 56 55 34 Note: Each side of device measured separately. Figure 5. DC Safe Operating Area P3dB = 60.70 dBm (1174.89 W) Ideal P1dB = 60.33 dBm (1078.94 W) Actual VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power 23 IDQ = 6000 mA 22 Gps, POWER GAIN (dB) 21 20 19 375 mA 18 17 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 150 mA VDD = 50 Vdc f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 1500 mA 750 mA Gps, POWER GAIN (dB) 3600 mA 20 22 Figure 7. Pulsed Output Power versus Input Power 18 50 V 45 V 16 35 V VDD = 30 V 14 IDQ = 150 Vdc, f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 0 200 400 600 800 1000 1200 1400 40 V 12 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain versus Output Power MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 65 60 Pout, OUTPUT POWER (dBm) 25_C 55 50 45 40 35 20 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 25 30 35 40 45 TC = −30_C Gps, POWER GAIN (dB) 85_C 22 21 20 19 18 17 16 15 14 13 12 1 10 100 Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED Gps ηD VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% TC = −30_C 100 90 ηD, DRAIN EFFICIENCY (%) 80 85_C 25_C 70 60 50 40 30 20 10 0 1000 2000 Figure 10. Pulsed Output Power versus Input Power 0.2 ZJC, THERMAL IMPEDANCE (°C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.0001 0.001 0.01 D = 0.1 PD t1 t2 D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power 109 D = 0.7 MTTF (HOURS) 10 108 D = 0.5 107 106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec, Duty Cycle = 20%, and ηD = 64%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 0.1 1 RECTANGULAR PULSE WIDTH (S) Figure 12. Maximum Transient Thermal Impedance Figure 13. MTTF versus Junction Temperature MRF6VP41KHR6 MRF6VP41KHSR6 6 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 450 MHz f = 450 MHz Zload Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 450 Zsource W 0.86 + j1.06 Zload W 1.58 + j1.22 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 14. Series Equivalent Source and Load Impedance MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6VP41KHR6 MRF6VP41KHSR6 8 RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 9 MRF6VP41KHR6 MRF6VP41KHSR6 10 RF Device Data Freescale Semiconductor MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 2 Date Jan. 2008 Apr. 2008 Sept. 2008 • Initial Release of Data Sheet • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 • Added Note to Fig. 4, Capacitance versus Drain - Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per - side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 3 Nov. 2008 • Added CW operation capability bullet to Features section, p. 1 • Added CW operation to Maximum Ratings table, p. 1 • Added CW thermal data to Thermal Characteristics table, p. 2 • Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show push - pull test conditions, p. 7 Description MRF6VP41KHR6 MRF6VP41KHSR6 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF6VP41KHR6 MRF6VP41KHSR6 Document Number: RF Device Data MRF6VP41KH Rev. 3, 11/2008 Freescale Semiconductor 13