MRF7P20040HR3_10

Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 32 Volts, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2025 MHz Gps (dB) 18.2 ηD (%) 42.6 Output PAR (dB) 7.3 ACPR (dBc) --34.8 MRF7P20040HR3 MRF7P20040HSR3 2010-2025 MHz, 10 W AVG., 32 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 50 Watts CW (1) Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS VDD Tstg TC TJ CW Value --0.5, +65 --6.0, +10 32, +0 -- 65 to +150 150 225 42.4 0.17 Unit Vdc Vdc Vdc °C °C °C W W/°C CASE 465M-01, STYLE 1 NI-780-4 MRF7P20040HR3 CASE 465H-02, STYLE 1 NI-780S-4 MRF7P20040HSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78°C, 10 W CW, 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz Case Temperature 82°C, 40 W CW(1), 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz Symbol RθJC Value (3,4) 2.11 1.50 Unit °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF7P20040HR3 MRF7P20040HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1A (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 μAdc) Gate Quiescent Voltage (VDD = 32 Vdc, IDA = 150 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.325 Adc) VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.24 2.7 3.5 0.3 Vdc Vdc Vdc Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 16 39 6.9 — — 18.2 42.6 7.3 --34.8 --17.8 21 — — --30 --10 dB % dB dBc dB Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2010--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW (4) IMD Symmetry @ 15 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 15 MHz Bandwidth @ Pout = 10 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) (4) 1. 2. 3. 4. P1dB P3dB IMDsym — — — 35 50 8 — — — W W MHz VBWres GF ∆G ∆P1dB — — — — 70 0.04 0.013 0.006 — — — — MHz dB dB/°C dB/°C Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF7P20040HR3 MRF7P20040HSR3 2 RF Device Data Freescale Semiconductor VGGA VDSA C11 C15 C17 C13 R2 C7 C5 C C9 R1 C1 C3 C2 C4 CUT OUT AREA P C10 C19 C6 C8 C12 C16 C18 C14 R3 MRF7P20040H/HS Rev. 1 VGGB VDSB Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2, C9, C10 C3, C4 C5, C6 C7, C8 C11, C12 C13, C14 C15, C16 C17, C18 C19 R1 R2, R3 PCB Description 12 pF Chip Capacitors 2.4 pF Chip Capacitors 27 pF Chip Capacitors 1.1 pF Chip Capacitors 12 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 0.8 pF Chip Capacitor 100 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0.020″, εr = 3.5 Part Number ATC600F120FT250XT ATC600F2R4AT250XT ATC600F270FT250XT ATC600F1R1AT250XT ATC100B120FT1500XT C3225X7R1H225KT GRM43ER61H475MA88L GRM55DR61H106KA88L ATC600F0R8AT250XT CRCW12061000FKEA CRCW120612R0FKEA RO4350B Manufacturer ATC ATC ATC ATC ATC TDK Murata Murata ATC Vishay Vishay Rogers MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 3 Single--ended λ λ 4 4 Quadrature combined λ 4 Doherty λ 2 λ 2 Push--pull Figure 3. Possible Circuit Topologies MRF7P20040HR3 MRF7P20040HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 32 Vdc, Pout = 10 W (Avg.) IDQA = 150 mA, VGSB = 1.5 Vdc Gps ηD, DRAIN EFFICIENCY (%) 18.5 18 17.5 Gps, POWER GAIN (dB) 17 16.5 16 ACPR 15.5 15 14.5 14 13.5 1880 1900 PARC 46 44 42 40 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 38 --28 --30 ACPR (dBc) --32 --34 --36 1940 1960 1980 2000 2020 --38 2040 ηD IRL, INPUT RETURN LOSS (dB) --14 --16 --18 --20 --22 --24 --1.8 --2 --2.2 --2.4 --2.6 --2.8 PARC (dB) IRL 1920 f, FREQUENCY (MHz) Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 10 Watts Avg. --10 --20 --30 IM3--U --40 --50 IM7--U --60 1 IM7--L 10 TWO--TONE SPACING (MHz) 100 IM5--U IM5--L IMD, INTERMODULATION DISTORTION (dBc) VDD = 32 Vdc, Pout = 15 W (PEP), IDQA = 150 mA VGSB = 1.5 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2017.5 MHz IM3--L Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing 18.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18 Gps, POWER GAIN (dB) 17.5 17 16.5 16 15.5 1 0 --1 --2 --3 --4 --5 --1 dB = 5.48 W --3 dB = 10.07 W VDD = 32 Vdc, IDQA = 150 mA PARC VGSB = 1.5 Vdc, f = 2017.5 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 3 6 9 12 15 Gps --2 dB = 7.64 W ACPR 48 ηD, DRAIN EFFICIENCY (%) 44 40 36 32 28 24 --26 --28 --30 --32 --34 --36 --38 ACPR (dBc) ηD Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 19 18.5 18 Gps, POWER GAIN (dB) 17.5 VDD = 32 Vdc, IDQA = 150 mA VGSB = 1.5 Vdc, Single--Carrier 17 W--CDMA, 3.84 MHz Channel 16.5 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% 16 Probability on CCDF 15.5 15 14.5 14 1 10 Pout, OUTPUT POWER (WATTS) AVG. 50 ACPR 2025 MHz ηD Gps f = 2010 MHz 2025 MHz 2017.5 MHz 2017.5 MHz 60 55 ηD, DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 10 0 --5 --10 --15 --25 --30 --35 --40 --45 --50 ACPR (dBc) --20 2010 MHz 2025 MHz 2017.5 MHz 2010 MHz Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 16 12 GAIN (dB) 8 4 0 --4 1450 VDD = 32 Vdc Pin = 0 dBm IDQA = 150 mA VGSB = 1.5 Vdc 1575 1700 1825 1950 IRL Gain --4 --10 --16 --22 --28 --34 --40 2450 IRL (dB) 2075 2200 2325 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response MRF7P20040HR3 MRF7P20040HSR3 6 RF Device Data Freescale Semiconductor W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 10. Single-Carrier W-CDMA Spectrum MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 7 VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg. f MHz 1995 2000 2005 2010 2015 2020 2025 2030 2035 Zload Zsource Ω 6.80 -- j13.11 6.66 -- j13.03 6.52 -- j12.93 6.37 -- j12.85 6.22 -- j12.78 6.08 -- j12.69 5.94 -- j12.60 5.80 -- j12.49 5.65 -- j12.40 Zload Ω 14.67 + j4.09 14.87+ j3.82 15.08 + j3.58 15.27 + j3.29 15.45 + j3.00 15.62 + j2.77 15.80 + j2.44 15.95 + j2.14 16.08 + j1.82 Note: Measured with Peaking side open. = Test circuit impedance as measured from drain to ground. Zsource = Test circuit impedance as measured from gate to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance — Carrier Side VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg. f MHz 1995 2000 2005 2010 2015 2020 2025 2030 2035 Zload Zsource Ω 8.45 -- j12.85 8.28 -- j12.79 8.11 -- j12.70 7.95 -- j12.63 7.79 -- j12.56 7.63 -- j12.48 7.50 -- j12.40 7.34 -- j12.32 7.19 -- j12.24 Zload Ω 5.83 -- j10.09 5.57 -- j10.11 5.32 -- j10.08 5.06 -- j10.07 4.80 -- j10.06 4.55 -- j10.01 4.32 -- j9.96 4.06 -- j9.88 3.82 -- j9.81 Note: Measured with Carrier side open. = Test circuit impedance as measured from drain to ground. Zsource = Test circuit impedance as measured from gate to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF7P20040HR3 MRF7P20040HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 32 Vdc, IDQA = 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle 49 48 Pout, OUTPUT POWER (dBm) 47 46 45 44 43 42 41 40 39 17 18 19 20 21 f = 2025 MHz f = 2010 MHz f = 2010 MHz Actual f = 2025 MHz Ideal 22 23 24 25 26 27 Pin, INPUT POWER (dBm) Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V f (MHz) 2010 2025 P1dB Watts 26 26 dBm 44.1 44.2 31 31 P3dB Watts dBm 44.9 44.9 Test Impedances per Compression Level f (MHz) 2010 2025 P1dB P1dB Zsource Ω 2.49 -- j18.56 2.66 -- j19.78 Zload Ω 15.82 -- j0.28 15.78 + j0.52 Figure 13. Pulsed CW Output Power versus Input Power @ 32 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 9 VDD = 28 Vdc, IDQA = 150 mA f MHz 1805 1880 1930 2025 2110 2200 Max Pout Watts 35 35 35 35 34 35 (1) VDD = 28 Vdc, IDQA = 150 mA Zload Ω 17.1 -- j7.9 14.0 -- j4.2 14.7 -- j5.9 15.5 -- j8.0 15.4 -- j9.3 14.4 -- j9.4 f MHz 1805 1880 1930 2025 2110 2200 Max Eff. (1) % 66.6 70.1 69.8 67.7 67.9 70.3 Zsource Ω 2.2 -- j9.3 2.3 -- j11.3 2.4 -- j13.0 3.5 -- j17.3 3.8 -- j20.6 5.6 -- j25.8 Zload Ω 17.6 + j9.5 16.1 + j9.8 14.2 + j8.9 13.8 + j6.2 11.5 + j3.9 9.6 -- j0.6 dBm 45.4 45.5 45.5 45.5 45.3 45.5 Zsource Ω 2.2 -- j9.3 2.3 -- j11.3 2.4 -- j13.0 3.5 -- j17.3 3.8 -- j20.6 5.6 -- j25.8 (1) Maximum output power measurement reflects pulsed 3 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner (1) Maximum efficiency measurement reflects pulsed 3 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Z source Z load Figure 14. Carrier Side Load Pull Performance — Maximum P3dB Tuning Figure 15. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF7P20040HR3 MRF7P20040HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 11 MRF7P20040HR3 MRF7P20040HSR3 12 RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 13 MRF7P20040HR3 MRF7P20040HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF7P20040H and MRF7P20040HS parts will be available for 2 years after release of MRF7P20040H and MRF7P20040HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7P20040H and MRF7P20040HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date June 2009 Aug. 2009 • Initial Release of Data Sheet • Removed IQ Magnitude Clipping from Typical Performance bullet, p. 1 and Functional Test header, p. 2 • Electrical Characteristics, DC tests: updated footnote to indicate each side of device measured separately, p. 2 2 Dec. 2010 • Updated frequency in overview paragraph from “2010 to 2025 MHz” to “1800 to 2200 MHz” per expanded load pull characterization shown in Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning, p. 1 • Added CW Operation information to Maximum Ratings table, p. 1 • In Table 2, Thermal Characteristics, Pout = 10 W CW thermal resistance values changed from IDQA 2.5/VGSB 2.9 to 2.11_C/W and Pout = 40 W CW thermal resistance value changed from 2.3 to 1.50_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 1 • Added Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning to show load pull data for expanded frequency range presented in p. 1 overview paragraph, p. 10 Description MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF7P20040HR3 MRF7P20040HSR3 1Rev. 2, 12/2010 6 Document Number: MRF7P20040H RF Device Data Freescale Semiconductor