MRF7S19210HR3

Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 29% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S19210HR3 MRF7S19210HSR3 1930 - 1990 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S19210HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S19210HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85°C, 190 W CW Case Temperature 79°C, 63 W CW Symbol RθJC Value (2,3) 0.34 0.38 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF7S19210HR3 MRF7S19210HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 5.13 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 2.17 257 508 — — — pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4 0.1 2 2.7 5.4 0.2 2.7 — 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 18 26 5.5 — — 20 29 5.9 - 33 - 9.5 21.5 — — - 31 -6 dB % dB dBc dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S19210HR3 MRF7S19210HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Average Group Delay @ Pout = 190 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 190 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) Symbol IMDsym Min Typ Max Unit MHz — 15 — Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth VBWres GF Φ Delay ΔΦ ΔG ΔP1dB — — — — — — — 50 0.9 0.95 2.82 28.9 0.019 0.008 — — — — — — — MHz dB ° ns ° dB/°C dBm/°C MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 3 R1 VBIAS R2 Z20 C1 C2 C3 R3 Z19 Z2 Z3 Z4 Z5 C6 C4 C5 Z21 Z6 Z7 Z8 Z9 Z10 Z22 VSUPPLY + C10 C11 C12 C21 RF INPUT Z1 C16 Z11 Z12 Z13 Z14 Z15 C14 Z16 Z17 RF Z18 OUTPUT DUT C13 Z23 C15 C17 + C9 C8 C7 C18 C19 C20 C22 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.126″ x 0.066″ Microstrip 0.584″ x 0.079″ Microstrip 0.110″ x 0.079″ Microstrip 0.133″ x 0.079″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.197″ x 0.102″ Microstrip 0.860″ x 0.551″ Microstrip 0.114″ x 0.551″ Microstrip 0.129″ x 1.102″ Microstrip 0.304″ x 1.102″ Microstrip 0.295″ x 0.276″ Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22, Z23 PCB 0.078″ x 0.102″ Microstrip 0.319″ x 0.102″ Microstrip 0.709″ x 0.220″ Microstrip 0.709″ x 0.220″ Microstrip 0.747″ x 0.066″ Microstrip 0.227″ x 0.066″ Microstrip 0.145″ x 0.090″ Microstrip 0.548″ x 0.090″ Microstrip 0.734″ x 0.090″ Microstrip 1.044″ x 0.100″ Microstrip Taconic RF35, 0.030″, εr = 3.5 Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values Part C1, C9, C11, C12, C19, C20 C2, C8 C3, C6, C7, C10, C14, C15, C18 C4 C5 C13 C16, C17 C21, C22 R1, R2 R3 Description 10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitors 470 μF Electrolytic Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number C5750X5R1H106M 12065C104KAT2A ATC100B8R2BT500XT ATC100B0R2BT500XT ATC100B1R8BT500XT ATC100B0R4BT500XT ATC100B0R5BT500XT 222212018471 WCR120610KFI WCR120610RFI TDK AVX ATC ATC ATC ATC ATC Vishay BC Components Welwyn Welwyn Manufacturer MRF7S19210HR3 MRF7S19210HSR3 4 RF Device Data Freescale Semiconductor C1 R1 R2 C2 C10 C11 C12 C3 C21 R3 C6 C4 C5 CUT OUT AREA C13 C14 C15 C16 C17 C8 C9 C7 C18 C19 C20 C22 MRF7S19210H Rev 0 Figure 2. MRF7S19210HR3(HSR3) Test Circuit Component Layout MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Gps VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA ηD, DRAIN EFFICIENCY (%) 21 20.5 20 Gps, POWER GAIN (dB) 19.5 ηD 34 33 32 31 30 −31 −32 PARC ACPR (dBc) −33 −34 IRL ACPR −35 1980 2000 2020 −36 2040 IRL, INPUT RETURN LOSS (dB) −2 −4 −6 −8 −10 −12 −1.5 −2 −2.5 −3 −3.5 −4 PARC (dB) 19 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 18.5 18 17.5 17 16.5 16 1880 1900 1920 1940 1960 f, FREQUENCY (MHz) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. 22 21 Gps, POWER GAIN (dB) 20 19 18 1050 mA 17 700 mA 16 1 10 Pout, OUTPUT POWER (WATTS) CW 100 300 VDD = 28 Vdc f = 1960 MHz IDQ = 2100 mA 0 −10 −20 IM3−U −30 IM3−L −40 −50 −60 1 10 TWO−TONE SPACING (MHz) 100 IM7−L IM7−U IM5−U IM5−L VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 1750 mA 1400 mA IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing −25 −30 −35 −40 −45 −50 −55 ACPR (dBc) 20.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 1 0 −1 −2 −1 dB = 48.916 W −3 −4 −5 30 −2 dB = 68.142 W ηD VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 50 60 70 80 90 Gps PARC ACPR 45 ηD, DRAIN EFFICIENCY (%) 40 35 −3 dB = 90.739 W 30 25 20 15 100 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF7S19210HR3 MRF7S19210HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 24 VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz 22 Channel Bandwidth 85_C TC = −30_C 25_C 20 Gps 18 16 14 12 1 ηD 10 100 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR 25_C 85_C 10 −30_C 0 300 −35 −30_C 25_C 85_C 60 50 ηD, DRAIN EFFICIENCY (%) 40 30 20 −5 −10 −15 −20 −25 −30 ACPR (dBc) 190 210 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 Gain 15 −2 MTTF (HOURS) 108 IRL (dB) 0 109 GAIN (dB) 10 −4 107 5 VDD = 28 Vdc Pout = 9 dBm IDQ = 1400 mA 1650 1750 1850 −6 0 −5 1550 IRL −8 106 1950 2050 2150 2250 −10 2350 105 90 110 130 150 170 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response Figure 9. MTTF versus Junction Temperature MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 7 W - CDMA TEST SIGNAL 100 10 −30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 −50 −60 −70 −80 −90 −100 −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 −ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −40 −10 −20 3.84 MHz Channel BW PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal f, FREQUENCY (MHz) Figure 11. Single - Carrier W - CDMA Spectrum MRF7S19210HR3 MRF7S19210HSR3 8 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 2040 MHz f = 2040 MHz Zsource Zload f = 1880 MHz f = 1880 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 5.20 - j1.02 4.90 - j1.00 4.60 - j0.92 4.31 - j0.82 4.04 - j0.71 3.80 - j0.56 3.58 - j0.42 3.38 - j0.30 3.19 - j0.16 Zload W 1.49 - j1.45 1.52 - j1.30 1.55 - j1.16 1.58 - j1.04 1.61 - j0.93 1.66 - j0.82 1.73 - j0.70 1.81 - j0.57 1.88 - j0.49 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 29 30 31 32 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1930 MHz 33 34 35 36 37 38 39 P1dB = 54.35 dBm (272 W) Actual P3dB = 55.27 dBm (337 W) Ideal Pout, OUTPUT POWER (dBm) 60 59 58 57 56 55 54 53 52 51 50 29 30 31 32 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1990 MHz 33 34 35 36 37 38 39 P1dB = 54.29 dBm (269 W) Actual P3dB = 55.25 dBm (335 W) Ideal Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 5.72 - j5.51 Zload Ω 1.30 - j0.69 P1dB Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω 6.20 + j1.19 Zload Ω 1.09 - j046 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V @ 1930 MHz Figure 14. Pulsed CW Output Power versus Input Power @ 28 V @ 1990 MHz MRF7S19210HR3 MRF7S19210HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 11 MRF7S19210HR3 MRF7S19210HSR3 12 RF Device Data Freescale Semiconductor MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 13 MRF7S19210HR3 MRF7S19210HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Dec. 2008 • Initial Release of Data Sheet Description MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF7S19210HR3 MRF7S19210HSR3 1Rev. 0, 12/2008 6 Document Number: MRF7S19210H RF Device Data Freescale Semiconductor