MRF7S27130HR3_08

Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 16.5 dB Drain Efficiency — 20% Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S27130HR3 MRF7S27130HSR3 2500 - 2700 MHz, 23 W AVG., 28 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465- 06, STYLE 1 NI - 780 MRF7S27130HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S27130HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C (1,2) Symbol VDS VGS VDD Tstg TC TJ CW Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 150 0.83 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 104 W CW Case Temperature 69°C, 23 W CW Symbol RθJC Value (2,3) 0.32 0.36 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MRF7S27130HR3 MRF7S27130HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 10.4 711 326 — — — pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4 0.1 2 2.7 5.4 0.24 2.7 — 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg., f = 2500 MHz and f = 2700 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 15 18 7.5 — — 16.5 20 8.2 - 49 -8 18.5 23 — - 46 -5 dB % dB dBc dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S27130HR3 MRF7S27130HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg., f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 23 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset RCE EVM — — — — — — — - 27 - 40 - 44 - 60 - 60 - 33 2.2 — — — — — — — dB % rms dBc Relative Constellation Error @ Pout = 23 W Avg. (1) Error Vector Magnitude (Typical EVM Performance @ Pout = 23 W Avg. with OFDM 802.16d Signal Call) (1) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2500 - 2700 MHz Bandwidth Video Bandwidth @ 105 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) — 40 — ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz