MRF7S35015HSR3

Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. • Typical Pulsed Performance: VDD = 32 Volts, IDQ = 50 mA, Pout = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 16 dB Drain Efficiency — 41% • Typical WiMAX Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Power Gain — 18 dB Drain Efficiency — 16% RCE — - 33 dB (EVM — 2.2% rms) • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak Power • Capable of Handling 3 dB Overdrive @ 32 Vdc Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF7S35015HSR3 3100 - 3500 MHz, 15 W PEAK, 32 V PULSED LATERAL N - CHANNEL RF POWER MOSFET CASE 465J - 02, STYLE 1 NI - 400S - 240 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 15 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Case Temperature 81°C, 15 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle Symbol RθJC Value (2,3) 0.60 0.73 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF7S35015HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 μAdc) Gate Quiescent Voltage (VDD = 32 Vdc, ID = 50 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 300 mAdc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 32 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.12 92 46 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 1.8 0.1 2 2.5 1.7 2.7 3.3 0.3 Vdc Vdc Vdc IGSS IDSS IDSS — — — — — — 1 2 10 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak (3 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 13 38 — 16 41 - 12 19 — -7 dB % dB Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak (3 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Output Pulse Droop (500 μsec Pulse Width, 10% Duty Cycle) Load Mismatch Tolerance (VSWR = 10:1 at all Phase Angles) 1. Part internally matched both on input and output. DRPout VSWR - T — 0.2 — dB No Degradation in Output Power MRF7S35015HSR3 2 RF Device Data Freescale Semiconductor B3 VBIAS + C9 RF INPUT + C8 C7 B2 C6 Z15 Z1 Z2 Z3 Z4 C10 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 B1 + C4 C3 + C2 + C1 VSUPPLY Z17 Z16 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 C5 Z28 Z29 Z30 Z31 RF OUTPUT DUT Z1 Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 0.375″ x 0.071″ Microstrip 0.126″ x 0.524″ Microstrip 0.079″ x 0.016″ Microstrip 0.153″ x 0.071″ Microstrip 0.076” x 0.520″ Microstrip 0.037″ x 0.252″ Microstrip 0.084″ x 0.73″ Microstrip 0.123″ x 0.440″ Microstrip 0.048″ x 0.073″ Microstrip 0.081″ x 0.184″ Microstrip 0.030″ x 0.262″ Microstrip 0.525″ x 0.336″ Microstrip 0.182″ x 0.466″ Microstrip 0.077″ x 0.466″ Microstrip 0.603″ x 0.048″ Microstrip 0.063″ x 0.618″ Microstrip 0.534″ x 0.040″ Microstrip Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28 Z29 Z30 Z31 PCB 0.078″ x 0.454″ Microstrip 0.055″ x 0.244″ Microstrip 0.630″ x 0.073″ Microstrip 0.218″ x 0.038″ Microstrip 0.060″ x 0.552″ Microstrip 0.079″ x 0.038″ Microstrip 0.062″ x 0.526″ Microstrip 0.032″ x 0.070″ Microstrip 0.110″ x 0.526″ Microstrip 0.053″ x 0.072″ Microstrip 0.028″ x 0.070″ Microstrip 0.098″ x 0.148″ Microstrip 0.062″ x 0.526″ Microstrip 0.529″ x 0.070″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 1. MRF7S35015HSR3 Test Circuit Schematic Table 5. MRF7S35015HSR3 Test Circuit Component Designations and Values Part B1* B2, B3 C1 C2 C3, C9 C4, C5, C10 C6 C7 C8 Long Ferrite Bead Short Ferrite Beads 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 2.7 pF Chip Capacitors 0.8 pF Chip Capacitor 0.1 μF Chip Capacitor 22 μF, 25 V Tantalum Capacitor Description Part Number 2743021447 2743019447 477KXM063M 476KXM050M T491X226K035AT ATC100B2R7BT500XT ATC100B0R8BT500XT CDR33BX104AKYS T491D226K025AT Manufacturer Fair - Rite Fair - Rite Illinois Cap Illinois Cap Kemet ATC ATC AVX Kemet * B1 is removed for WiMAX circuit performance. MRF7S35015HSR3 RF Device Data Freescale Semiconductor 3 C8 C3 B2 B3 C7 C9 C6 C4 B1 C2 C1 C10 CUT OUT AREA C5 MRF7S35015H Rev. 1 Figure 2. MRF7S35015HSR3 Test Circuit Component Layout MRF7S35015HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 10 TJ = 200°C TJ = 175°C TJ = 150°C 1 C, CAPACITANCE (pF) 100 Coss Ciss 10 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 1 Crss 0.1 0 5 10 15 20 25 30 35 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) TC = 25°C 0.1 1 10 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 100 Figure 3. Capacitance versus Drain - Source Voltage 17 f = 3500 MHz 16.5 Gps, POWER GAIN (dB) 16 15.5 15 14.5 14 13.5 13 2 VDD = 32 Vdc, IDQ = 50 mA Pulse Width = 100 μsec Duty Cycle = 20% 10 Pout, OUTPUT POWER (WATTS) PULSED 30 3100 MHz ηD 3300 MHz Gps 50 Pout, OUTPUT POWER (dBm) PULSED 3300 MHz 45 40 35 30 25 20 15 10 ηD, DRAIN EFFICIENCY (%) 3500 MHz 47 46 45 44 43 42 41 40 39 38 21 22 Figure 4. DC Safe Operating Area 3100 MHz P3dB = 43 dBm (19.8 W) P2dB = 42.7 dBm (19 W) Ideal P1dB = 42.2 dBm (16.7 W) Actual VDD = 32 Vdc, IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 23 24 25 26 27 28 29 30 Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) PULSED 30 VDD = 32 Vdc, f = 3500 MHz Pulse Width = 100 μsec, Duty Cycle = 20% IDQ = 300 mA Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 1 Figure 6. Pulsed Output Power versus Input Power 150 mA 100 mA 50 mA 32 V 30 V 28 V 26 V VDD = 24 V 10 Pout, OUTPUT POWER (WATTS) PULSED 30 IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 μsec Duty Cycle = 20% Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power MRF7S35015HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 30 Pout, OUTPUT POWER (WATTS) PULSED 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 Pin, INPUT POWER (WATTS) PULSED 3300 MHz 25_C 3100 MHz 25_C Gps, POWER GAIN (dB) 3500 MHz −30_C 3300 MHz 85_C 3500 MHz 85_C 3100 MHz 85_C 3500 MHz 25_C VDD = 32 Vdc, IDQ = 50 mA Pulse Width = 100 μsec, Duty Cycle = 20% 3100 MHz −30_C 3300 MHz −30_C 17 16 Gps 15 14 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) PULSED 30 TC = −30_C 25_C 85_C ηD 85_C 20 10 0 40 30 −30_C 60 50 ηD, DRAIN EFFICIENCY (%) VDD = 32 Vdc, IDQ = 50 mA, f = 3100 MHz Pulse Width = 100 μsec, Duty Cycle = 20% Figure 9. Pulsed Output Power versus Input Power 18 Gps 17 Gps, POWER GAIN (dB) TC = −30_C 16 15 14 13 12 1 25_C 85_C Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power — 3100 MHz 60 50 40 85_C 30 ηD VDD = 32 Vdc, IDQ = 50 mA, f = 3300 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 10 30 20 10 0 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) −30_C Pout, OUTPUT POWER (WATTS) PULSED Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power — 3300 MHz 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 1 VDD = 32 Vdc, IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 10 Pout, OUTPUT POWER (WATTS) PULSED 30 85_C ηD TC = −30_C 85_C 25_C 35 30 25 20 15 10 50 −30_C 45 40 Gps Figure 12. Pulsed Power Gain and Drain Efficiency versus Output Power — 3500 MHz MRF7S35015HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 17.25 17 Gps, POWER GAIN (dB) 16.75 Gps 16.5 16.25 16 15.75 15.5 15.25 3100 VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Pulse Width = 100 μsec, Duty Cycle = 20% 3150 3200 3250 3300 3350 3400 3450 −9 −18 −27 −36 3500 IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) 18.3 18.2 18.1 18 17.9 17.8 GAIN (dB) IRL ηD 44 43 42 41 ηD, DRAIN EFFICIENCY (%) f, FREQUENCY (MHz) Figure 13. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency RCE (RELATIVE CONSTELLATION ERROR (dB) −25 VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz, Single−Carrier −27 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz 4 −29 Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF −31 −33 −35 −37 −39 −41 −43 −45 28 29 30 31 32 33 34 35 36 Pout, OUTPUT POWER (dBm) ηD RCE Gps 24 22 20 18 16 14 12 10 8 6 4 Figure 14. Single - Channel OFDM Relative Constellation Error, Drain Efficiency and Gain versus Output Power 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 15 W Peak, Pulse Width = 100 μsec, Duty Cycle = 20%, and ηD = 41%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature MRF7S35015HSR3 RF Device Data Freescale Semiconductor 7 f = 3100 MHz Zsource f = 3100 MHz f = 3500 MHz Z o = 50 Ω Zload f = 3500 MHz VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak f MHz 3100 3300 3500 Zsource W 48.6 + j16.1 11.8 + j3.15 6.43 - j6.79 Zload W 5.6 - j5.2 6.36 - j6.83 7.41 - j15.5 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF7S35015HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S35015HSR3 RF Device Data Freescale Semiconductor 9 MRF7S35015HSR3 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date June 2008 Aug. 2008 • Initial Release of Data Sheet • Added p. 1 of Case 465J - 02 Mechanical Outline drawing, p. 9 Description MRF7S35015HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF7S35015HSR3 1Rev. 1, 8/2008 2 Document Number: MRF7S35015HS RF Device Data Freescale Semiconductor