Freescale Semiconductor Technical Data
Document Number: MRF7S38010H Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 30 Volts, IDQ = 160 mA, Pout = 2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 15 dB Drain Efficiency — 17% Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 10 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S38010HR3 MRF7S38010HSR3
3400 - 3600 MHz, 2 W AVG., 30 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465I - 02, STYLE 1 NI - 400 - 240 MRF7S38010HR3
CASE 465J - 02, STYLE 1 NI - 400S - 240 MRF7S38010HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc °C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W CW Case Temperature 77°C, 2 W CW Symbol RθJC Value (2,3) 2.05 2.24 Unit °C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38010HR3 MRF7S38010HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 μAdc) Gate Quiescent Voltage (VDD = 30 Vdc, ID = 160 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 335 mAdc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.13 68.5 50.6 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.21 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps ηD PAR ACPR IRL 13 15 8 — — 15 17 8.5 - 49 - 12 17 30 — - 46 -6 dB % dB dBc dB
MRF7S38010HR3 MRF7S38010HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 2 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset RCE EVM — — — — — — — - 26 - 38 - 43 - 60 - 60 - 33 2.3 — — — — — — — dB % rms dBc
Relative Constellation Error @ Pout = 2 W Avg. (1) Error Vector Magnitude (Typical EVM Performance @ Pout = 2 W Avg. with OFDM 802.16d Signal Call)
(1)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, 3400 - 3600 MHz Bandwidth Video Bandwidth @ 12 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) — 20 — ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz
