MRF8HP21130HSR3

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW (1) Features • Advanced High Performance In--Package Doherty • Production Tested in a Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 8. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 8. CASE 465M-01, STYLE 1 NI-780-4 MRF8HP21130HR3 CASE 465H-02, STYLE 1 NI-780S-4 MRF8HP21130HSR3 Peaking RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 Carrier (Top View) 2 RFoutB/VDSB Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C VDSS VGS VDD Tstg TC TJ CW Figure 1. Pin Connections Symbol Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 118 0.28 Unit Vdc Vdc Vdc °C °C °C W W/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8HP21130HR3 MRF8HP21130HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 28 W CW, 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2170 MHz Case Temperature 105°C, 110 W CW(3), 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2170 MHz Symbol RθJC Value (1,2) 0.60 0.50 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1C (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (4) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics - Side A (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 102 μAdc) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.02 Adc) On Characteristics - Side B (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 75 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDB = 360 mA, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.75 Adc) VGS(th) VDS(on) 0.1 0.1 0.9 0.2 1.6 0.3 Vdc Vdc VGS(th) VGS(Q) VDS(on) 1.2 1.9 0.1 1.8 2.6 0.2 2.7 3.4 0.3 Vdc Vdc Vdc Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Gps ηD PAR ACPR 13.0 42.0 6.7 — 14.0 45.1 7.6 --34.8 16.0 — — --30.0 dB % dB dBc Typical Broadband Performance (6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Doherty configuration. (continued) MRF8HP21130HR3 MRF8HP21130HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 52 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 28 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) (2) P1dB P3dB IMDsym — — — 130 (2) 166 (2) 18 — — — W W MHz VBWres GF ∆G ∆P1dB — — — — 50 0.2 0.011 0.012 — — — — MHz dB dB/°C dB/°C 1. Measurement made with device in a Doherty configuration. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 3 C1 C2 C3 C11 C12 C21 R1 C13 MRF8HP21130 Rev. 1 C4 Z1 R2 R3 C5 C6 R4 CUT OUT AREA P C14 C15 C C16 C17 C7 C8 C18 C22 C19 C20 C9 C10 Figure 2. MRF8HP21130HR3(HSR3) Test Circuit Component Layout Table 5. MRF8HP21130HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2, C9, C10, C11, C12, C19, C20 C3, C4, C5, C8, C13, C15, C16, C18 C6 C7 C14 C17 C21, C22 R2, R3 R1, R4 Z1 PCB Description 10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000--2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Number GRM55DR61H106KA88L ATC600F150JT250XT ATC600F1R2BT250XT ATC600F0R5BT250XT ATC600F0R7BT250XT ATC600F1R0BT250XT EMVY500ADA221MJA0G CRCW1206100RFKEA CRCW120610R0JNEA X3C21P1--03S R04350 Manufacturer Murata ATC ATC ATC ATC ATC United Chemi--Con Vishay Vishay Anaren Rogers MRF8HP21130HR3 MRF8HP21130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 28 W (Avg.), IDQB = 360 mA, VGSA = 0.4 Vdc 14.6 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 14.4 Gps, POWER GAIN (dB) 14.2 14 13.8 13.6 13.4 13.2 13 12.8 2060 2080 2100 2120 2140 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF PARC Gps ηD ηD, DRAIN EFFICIENCY (%) --2 ACPR (dBc) --2.2 --2.4 --2.6 --2.8 --3 PARC (dB) ACPR (dBc) --15 --20 --25 --30 --35 --40 --45 ηD, DRAIN EFFICIENCY (%) 14.8 48 47 46 45 44 --32 --33 --34 --35 ACPR 2160 2180 2200 --36 --37 2220 f, FREQUENCY (MHz) Figure 3. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 28 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) --10 --20 --30 --40 --50 --60 IM5--L IM5--U IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 VDD = 28 Vdc, Pout = 52 W (PEP), IDQB = 360 mA VGSA = 0.4 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3--L IM3--U Figure 4. Intermodulation Distortion Products versus Two-Tone Spacing 15 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 14.5 Gps, POWER GAIN (dB) 14 13.5 13 12.5 12 1 0 --1 Gps --2 --3 --4 --5 --1 dB = 17 W --2 dB = 26 W --3 dB = 34 W 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 40 50 PARC 60 ACPR VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc f = 2140 MHz, Single--Carrier W--CDMA ηD 60 50 40 30 20 10 0 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel 16 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 14 12 10 8 6 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 2110 MHz 2140 MHz 2170 MHz 2140 MHz 2170 MHz 2110 MHz 18 60 ηD 50 ηD, DRAIN EFFICIENCY (%) 40 ACPR 30 20 Gps 10 0 150 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6 Gps, POWER GAIN (dB) GAIN (dB) Figure 6. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 18 15 12 9 6 3 0 1800 VDD = 28 Vdc Pin = 0 dBm IDQB = 360 mA VGSA = 0.4 Vdc 1875 1950 2025 2100 2175 2250 2325 2400 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW Figure 8. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 9. Single-Carrier W-CDMA Spectrum MRF8HP21130HR3 MRF8HP21130HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power f (MHz) 2110 2140 2170 Zsource (Ω) 6.20 -- j10.7 7.80 -- j11.5 9.20 -- j12.2 Zload (1) (Ω) 3.40 -- j6.70 3.40 -- j6.80 3.00 -- j7.24 P1dB (dBm) 48.4 48.4 48.4 (W) 69 69 69 ηD (%) 55.3 55.5 52.5 (dBm) 49.2 49.2 49.2 P3dB (W) 83 83 83 ηD (%) 56.1 55.3 53.3 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) 2110 2140 2170 Zsource (Ω) 6.20 -- j10.7 7.80 -- j11.5 9.20 -- j12.2 Zload (1) (Ω) 7.60 -- j6.30 7.71 -- j5.50 6.40 -- j5.60 P1dB (dBm) 46.8 46.6 47.0 (W) 48 46 50 ηD (%) 63.5 63.5 62.3 (dBm) 48.0 47.8 47.8 P3dB (W) 63 60 60 ηD (%) 64.1 63.9 62.5 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power f (MHz) 2110 2140 2170 Zsource (Ω) 3.10 -- j7.30 3.77 -- j7.80 4.30 -- j8.50 Zload (1) (Ω) 5.40 + j0.50 5.00 + j1.80 4.30 + j1.50 P1dB (dBm) 51.4 51.2 51.2 (W) 138 132 132 ηD (%) 55.8 54.4 54.1 (dBm) 52.2 52.0 52.0 P3dB (W) 166 158 158 ηD (%) 56.9 56.7 55.2 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) 2110 2140 2170 Zsource (Ω) 3.10 -- j7.30 3.77 -- j7.80 4.30 -- j8.50 Zload (1) (Ω) 4.80 -- j5.20 6.50 -- j4.80 6.90 -- j4.90 P1dB (dBm) 49.1 49.0 48.8 (W) 81 79 76 ηD (%) 67.2 66.6 66.7 (dBm) 51.0 49.9 49.9 P3dB (W) 126 98 98 ηD (%) 68.2 67.5 67.4 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning MRF8HP21130HR3 MRF8HP21130HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 9 MRF8HP21130HR3 MRF8HP21130HSR3 10 RF Device Data Freescale Semiconductor MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 11 MRF8HP21130HR3 MRF8HP21130HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8HP21130H and MRF8HP21130HS parts will be available for 2 years after release of MRF8HP21130H and MRF8HP21130HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8HP21130H and MRF8HP21130HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Apr. 2011 • Initial Release of Data Sheet Description MRF8HP21130HR3 MRF8HP21130HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8HP21130HR3 MRF8HP21130HSR3 1Rev. 0, 4/2011 4 Document Number: MRF8HP21130H RF Device Data Freescale Semiconductor