MRF8P8300HSR6

Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 790 MHz 805 MHz 820 MHz Gps (dB) 20.9 21.0 20.9 ηD (%) 35.2 35.5 35.7 Output PAR (dB) 6.2 6.2 6.1 ACPR (dBc) --38.1 --38.1 --38.2 MRF8P8300HR6 MRF8P8300HSR6 790-820 MHz, 96 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C CASE 375D-05, STYLE 1 NI-1230 MRF8P8300HR6 CASE 375E-04, STYLE 1 NI-1230S MRF8P8300HSR6 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 96 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz Case Temperature 85°C, 300 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz Symbol RθJC Value (2,3) 0.26 0.21 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8P8300HR6 MRF8P8300HSR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ = 2000 mA, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 3 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.2 3.0 3.8 0.3 Vdc Vdc Vdc Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., f = 820 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 20.0 34.5 5.9 — — 20.9 35.7 6.1 --38.2 --12 23.5 — — --36.5 --9 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 790 MHz 805 MHz 820 MHz 1. Each side of device measured separately. 2. Part internally matched both on input and output. (continued) Gps (dB) 20.9 21.0 20.9 ηD (%) 35.2 35.5 35.7 Output PAR (dB) 6.2 6.2 6.1 ACPR (dBc) --38.1 --38.1 --38.2 IRL (dB) --11 --12 --12 MRF8P8300HR6 MRF8P8300HSR6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 290 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 30 MHz Bandwidth @ Pout = 96 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 340 35 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, 790--820 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 35 0.5 0.0185 0.0076 — — — — MHz dB dB/°C dB/°C MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 3 B1 C27 C23 C11 R1 C55 C39 C47* C41 C43 C44 C36 C34 C32 C38 C42 C48* C40 C56 C45 C46 C51 C50 C52 C49 C13 C25 C29 C53 C57 C4 C5* C9 C17 C37 C15 C19 C21 C22 CUT OUT AREA C31 C33 C35 C7 C8 C1 C2 C3 C6* C18 C10 C20 C16 MRF8P8300H Rev. 2 R2 C12 C24 C14 C26 C28 C30 C54 C58 B2 *C5, C6, C47, and C48 are mounted vertically. Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 C1, C2, C39, C40, C41, C42 C3, C49, C50 C4 C5, C6, C11, C12, C47, C48 C7, C8, C45, C46 C9, C10 C13, C14, C19, C20, C25, C26 C15, C16, C35, C36 C17, C18 C21, C22 C23, C24 C27, C28 C29, C30 C31, C32 C33, C34 C37, C38 C43, C44 C51, C52 C53, C54, C55, C56 C57, C58 R1, R2 PCB Description Short Ferrite Beads 2.1 pF Chip Capacitors 1.0 pF Chip Capacitors 120 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 4.7 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 4.7 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF Electrolytic Capacitors 20 pF Chip Capacitors 30 pF Chip Capacitors 13 pF Chip Capacitors 7.5 pF Chip Capacitors 1.5 pF Chip Capacitors 0.8 pF Chip Capacitors 2.0 pF Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 3 Ω Chip Resistors 0.030″, εr = 3.5 Part Number MPZ2012S300AT000 ATC100B2R1BT500XT ATC100B1R0BT500XT ATC100B121JT500XT ATC100B390JT500XT ATC100B1R1BT500XT C4532X5R1H475KT ATC100B100JT500XT ATC100B4R7CT500XT ATC100B4R3CT500XT ATC100B8R2CT500XT UUD1V220MCL1GS ATC100B200JT500XT ATC100B300JT500XT ATC100B130JT500XT ATC100B7R5CT500XT ATC100B1R5BT500XT ATC100B0R8BT500XT ATC100B2R0BT500XT C5750JF1H226ZT MCGPR63V477M13X26--RH CRCW12063R00FNEA RF35A2 Manufacturer TDK ATC ATC ATC ATC ATC TDK ATC ATC ATC ATC Nichicon ATC ATC ATC ATC ATC ATC ATC TDK Multicomp Vishay Taconic MRF8P8300HR6 MRF8P8300HSR6 4 RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ λ 4 4 Quadrature combined λ 4 Doherty λ 2 λ 2 Push--pull Figure 3. Possible Circuit Topologies MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 25 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 730 IRL ACPR 750 770 790 810 830 850 870 PARC Gps ηD 36 34 VDD = 28 Vdc, Pout = 96 W (Avg.), IDQ = 2000 mA 32 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30 28 --30 --32 ACPR (dBc) --34 --36 --38 --40 890 f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (dB) 0 --4 --8 --12 --16 --20 --1 --1.3 --1.6 --1.9 --2.2 --2.5 PARC (dB) Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 96 Watts Avg. --10 --20 --30 --40 --50 --60 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 290 W (PEP), IDQ = 2000 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 805 MHz IM3--U IM3--L IM5--U IM5--L IM7--U IM7--L 1 10 TWO--TONE SPACING (MHz) 100 Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing 22 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 21.5 Gps, POWER GAIN (dB) 21 20.5 20 19.5 19 1 0 --1 --2 --3 --4 --5 --1 dB = 75.1 W --3 dB = 153.4 W --2 dB = 110.5 W PARC Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 70 100 130 160 Gps 56 ηD, DRAIN EFFICIENCY (%) ACPR ηD 50 44 38 32 26 20 190 --25 --30 --35 --40 --45 --50 --55 ACPR (dBc) VDD = 28 Vdc, IDQ = 2000 mA, f = 805 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8P8300HR6 MRF8P8300HSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 22 790 MHz Gps, POWER GAIN (dB) 21 20 19 18 17 1 10 790 MHz 100 805 MHz 820 MHz Gps ACPR VDD = 28 Vdc, IDQ = 2000 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 790 MHz 805 MHz 820 MHz ηD 44 33 22 820 MHz 805 MHz 11 0 400 66 55 ηD, DRAIN EFFICIENCY (%) 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 8 4 0 580 VDD = 28 Vdc Pin = 0 dBm IDQ = 2000 mA 640 700 760 820 880 940 1000 Gain 10 5 0 --5 IRL --10 --15 --20 1060 IRL (dB) 3.84 MHz Channel BW 0 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 10. Single-Carrier W-CDMA Spectrum MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg. f MHz 730 750 770 790 810 830 850 870 890 Zsource Ω 1.07 -- j1.15 1.06 -- j0.97 1.11 -- j0.78 1.05 -- j0.62 1.11 -- j0.45 1.19 -- j0.26 1.95 + j0.48 1.35 -- j1.66 0.95 -- j1.07 Zload Ω 0.86 -- j0.18 0.90 + j0.04 1.07 + j0.46 1.28 -- j0.67 0.88 -- j0.12 0.87 + j0.04 0.82 + j0.05 0.71 + j0.12 0.59 + j0.22 Zsource = Test circuit impedance as measured from gate to ground, gate leads are tied together. Zload = Test circuit impedance as measured from drain to ground, drain leads are tied together. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF8P8300HR6 MRF8P8300HSR6 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQA = 1000 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 61.5 60 Pout, OUTPUT POWER (dBm) 58.5 57 55.5 54 52.5 51 49.5 48 46.5 45 25 26.5 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 790 806 822 P1dB Watts 288 299 287 dBm 54.6 54.8 54.6 363 366 349 P3dB Watts dBm 55.6 55.6 55.4 790 MHz 806 MHz 822 MHz Actual 822 MHz 806 MHz 790 MHz Ideal Test Impedances per Compression Level f (MHz) 790 806 822 P1dB P1dB P1dB Zsource Ω 1.04 -- j0.98 1.16 -- j1.39 1.24 -- j1.73 Zload Ω 0.78 -- j0.73 0.76 -- j0.71 0.76 -- j0.74 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on a per side basis. MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8P8300HR6 MRF8P8300HSR6 10 RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 11 MRF8P8300HR6 MRF8P8300HSR6 12 RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P8300H and MRF8P8300HS parts will be available for 2 years after release of MRF8P8300H and MRF8P8300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P8300H and MRF8P8300HS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Jan. 2011 • Initial Release of Data Sheet Description MRF8P8300HR6 MRF8P8300HSR6 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P8300HR6 MRF8P8300HSR6 Document Number: RF Device Data MRF8P8300H Rev. 0, 1/2011 Freescale Semiconductor 15